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“New erbium silicide superstructures: a study by high resolution electron microscopy”. Frangis N, Van Tendeloo G, van Landuyt J, Kaltsas G, Travlos A, Nassiopoulos AG, Physica status solidi: A: applied research 158, 107 (1996)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 6
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“Present and future applications of beam techniques in environmental microanalysis”. Jambers W, Van Grieken R, Trends in analytical chemistry 15, 114 (1996). http://doi.org/10.1016/0165-9936(95)00098-4
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1016/0165-9936(95)00098-4
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“Electron capture in GaAs quantum wells via electron-electron and optic phonon scattering”. Kálna K, Mo×ko M, Peeters FM, Applied physics letters 68, 117 (1996)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.302
Times cited: 10
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“Two-dimensional electrons in modulated magnetic fields”. Peeters FM, Matulis A, Ibrahim IS, Physica: B : condensed matter 227, 131 (1996). http://doi.org/10.1016/0921-4526(96)00381-X
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.319
Times cited: 17
DOI: 10.1016/0921-4526(96)00381-X
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“Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope”. Fedina L, van Landuyt J, Vanhellemont J, Aseev AL, Nuclear instruments and methods in physics research B112, 133 (1996). http://doi.org/10.1016/0168-583X(95)01277-X
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.124
Times cited: 4
DOI: 10.1016/0168-583X(95)01277-X
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“The paraelectric-ferroelectric phase transition of Bi4Ti3O12 studied by electron microscopy”. Nistor L, Van Tendeloo G, Amelinckx S, Phase transitions 59, 135 (1996)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.954
Times cited: 6
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“High crystalline quality erbium silicide films on (100) silicon grown in high vacuum”. Kaltsas G, Travlos A, Nassiopoulos AG, Frangis N, van Landuyt J, Applied surface science 102, 151 (1996). http://doi.org/10.1016/0169-4332(96)00036-0
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.711
Times cited: 14
DOI: 10.1016/0169-4332(96)00036-0
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“Quantitative surface analysis of silver halide microcrystals using scanning ion microprobe and scanning Auger microprobe”. Janssens G, Geuens I, de Keyzer R, van Espen P, Gijbels R, Hubin A, Terryn H, Vereecken J Wiley, Chichester, page 161 (1996).
Keywords: H3 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT); Chemometrics (Mitac 3)
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“Electron microscopy characterisation of erbium silicide-thin films grown on a Si(111) substrate”. Frangis N, Van Tendeloo G, van Landuyt J, Muret P, Nguyen TTA, Applied surface science 102, 163 (1996). http://doi.org/10.1016/0169-4332(96)00040-2
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.711
Times cited: 9
DOI: 10.1016/0169-4332(96)00040-2
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“Stability and dynamical properties of a double-layer Wigner crystal in two dimensions”. Goldoni G, Schweigert V, Peeters FM, Surface science : a journal devoted to the physics and chemistry of interfaces 361/362, 163 (1996). http://doi.org/10.1016/0039-6028(96)00359-7
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.925
Times cited: 4
DOI: 10.1016/0039-6028(96)00359-7
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“Destruction of magnetophonon resonance in high magnetic fields from impurity and phonon scattering in heterojunctions”. Xu W, Peeters FM, Devreese JT, Leadley DR, Nicholas RJ, International journal of modern physics: B: condensed matter physics, statistical physics, applied physics 10, 169 (1996). http://doi.org/10.1142/S0217979296000076
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 0.937
Times cited: 11
DOI: 10.1142/S0217979296000076
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“Effects of marine spray and air pollution on monuments in the Mediterranean coastal environment”. Torfs K, Van Grieken R page 170 (1996).
Keywords: H3 Book chapter; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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“Photoelectric and electrical responses of several erbium silicide/silicon interfaces”. Muret P, Nguyen TTA, Frangis N, Van Tendeloo G, van Landuyt J, Applied surface science
T2 –, International Symposium on Si Heterostructures –, From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE 102, 173 (1996). http://doi.org/10.1016/0169-4332(96)00042-6
Abstract: In this work, photoelectric yield and electrical properties of several types of epitaxial erbium silicide on silicon Schottky diodes are studied, Different preparation conditions are used simultaneously on n- and p-Si(111) substrates for the 200 Angstrom thick silicide films. A last type of sample consists in 1.3 monolayer of epitaxial silicide with root 3 X root 3 superstructure on the Si substrate and covered by silver on the top. Photocurrent measurements are done as a function of photon energy at several temperatures. All these samples show barrier heights near 1 eV on p-type Si, even for the interface comprising only 1.3 monolayer of silicide whereas barrier heights on n-rype Si span the range from 0.28 to 0.67 eV for this last kind of sample, the sum of the barriers always exceeding the silicon band gap, These photoelectric results are confirmed by electrical characterisations, All these results show that the Fermi level is pinned 0.1 eV below the conduction band edge on p-type Si but shifts to various positions lower within the band gap on n-type Si. This fact leads to the hypothesis of a density of -7 interface states close to the charge change in the Si depletion zone from p- to n-type, namely 10(12) eV(-1) cm(-2). Although some inhomogeneities and defects at the interface are detected by electron microscopy for samples annealed at 750 degrees C, Fermi level position seems rather insensitive to the structural details of the interface while the silicide thickness plays a role on n-type Si.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.711
Times cited: 3
DOI: 10.1016/0169-4332(96)00042-6
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“Critical assessment of the process of growth of a YBa2Cu3O7-\delta layer on Y2BaCuO5”. Jacques P, Verbist K, Lapin J, Ryelandt L, Van Tendeloo G, Delannay F, Superconductor science and technology 9, 176 (1996). http://doi.org/10.1088/0953-2048/9/3/008
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.325
Times cited: 1
DOI: 10.1088/0953-2048/9/3/008
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“Accurate evaluation of \mu-PIXE and \mu-XRF spectral data through iterative least squares fitting”. Janssens K, Vekemans B, Adams F, van Espen P, Mutsaers P, Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 –, 7th International Conference on Particle Induced X-ray Emission and Its Analytical Applications, MAY 26-30, 1995, Abano Terme, Italy 109, 179 (1996). http://doi.org/10.1016/0168-583X(95)01211-7
Abstract: The integration of the nonlinear least squares X-ray spectrum evaluation progam AXIL. into a mu-PIXE and a mu-XRF setup is discussed. The use of the software when procesing data sets derived from biological and geological samples is described.
Keywords: A1 Journal article; Engineering sciences. Technology; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation); Chemometrics (Mitac 3)
DOI: 10.1016/0168-583X(95)01211-7
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“X-ray microanalysis: a new tool for environmental analysis”. Adams F, Janssens K page 183 (1996).
Keywords: H3 Book chapter; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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“Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+”. Frangis N, van Landuyt J, Grimaldi MG, Calcagno L, Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 –, Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France 120, 186 (1996). http://doi.org/10.1016/S0168-583X(96)00506-X
Abstract: 6H SiC single crystals were implanted al room temperature with 1 MeV He+ up to a fluence of 2 x 10(17) at./cm(2) RBS-channeling analysis with a 2 MeV He+ beam indicated the formation of extended defects or the generation of point defects at a constant concentration over a depth of about 1 mu m. Electron microscopy characterisation revealed the presence of two amorphous buried layers at depths of about 1,75 and 4.8 mu m. They an due to the implantation and to the analysing RES beam, respectively, No extended planar or linear faults were found in the region between the surface and the first amorphous layer. However, at the surface, a 50 nm thick amorphous layer was observed in which crystalline inclusions were embedded. Electron diffraction and HREM data of the inclusions were typical for diamond, These inclusions were even found in the crystalline SiC material below this layer, however at a reduced density.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.124
Times cited: 2
DOI: 10.1016/S0168-583X(96)00506-X
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“A comparative investigation of replication techniques used for the study of (S+Au) sensitized AgBr microcrystals”. Buschmann V, Schryvers D, van Landuyt J, van Roost C, de Keyzer R, The journal of imaging science and technology 40, 189 (1996)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.349
Times cited: 4
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“Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope”. Fedina L, van Landuyt J, Vanhellemont J, Aseev A, Materials Research Society symposium proceedings 404, 189 (1996)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
Times cited: 1
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“Polaron effects on cyclotron mass due to interface and slab phonons in GaAs/AlGaAs quantum wells”. Hai G-Q, Studart N, Peeters FM, Brazilian journal of physics 26, 219 (1996)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 0.81
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“Combination of CeO2 and PtO2 doping for the strong enhancement of Jc under magnetic field in melt-textured superconductor YBaCuO”. Delamare MP, Hervieu M, Wang J, Provost J, Monot I, Verbist K, Van Tendeloo G, Physica: C : superconductivity 262, 220 (1996). http://doi.org/10.1016/0921-4534(96)00225-0
Abstract: A combination of CeO2 and PtO2 doping has been studied in melt-processed YBa2Cu3O7-x. This study was carried out using an optimized well established MTG process. The cerium-platinum doped samples exhibit a high fishtail effect with a J(c) of 4.3 x 10(4) A/cm(2) under an applied field of 1 T. Microstructural and nanostructural studies have been performed. The 211 and BaCeO3 inclusions are a few micrometers wide and the formation of a metastable nanocrystalline phase (Y4Ba4)Cu-8-x(Ce,Pt)(x)O-20+delta related to the perovskite is detected. The 123 grains show no specific extended defect generated by the doping process. The relationship between structure and properties are discussed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.942
Times cited: 27
DOI: 10.1016/0921-4534(96)00225-0
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“Structural characterisation of erbium silicide thin films of an Si(111) substrate”. Frangis N, Van Tendeloo G, van Landuyt J, Muret P, Nguyen TTA, Journal of alloys and compounds 234, 244 (1996). http://doi.org/10.1016/0925-8388(95)02131-0
Abstract: ErSi2-x films (x = 0.1-0.3) grown by co-evaporation at different deposition ratios have been characterised by transmission electron microscopy, electron diffraction and high resolution electron microscopy. A very good epitaxial growth relation with the Si substrate was deduced for a1 samples and observed phases. Different defect modulated structures are formed; they can be described as structural variants (orthorhombic or rhombohedral) of the basic structure. The modulated phases are related to deviations from stoichiometry similar to crystallographic shear structures. The ErSi1.9 material contains Si precipitates, illustrating the preference for the ErSi1.7 composition to be maintained.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.999
Times cited: 14
DOI: 10.1016/0925-8388(95)02131-0
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“Resonant tunneling through D- states”. Lok JGS, Geim AK, Maan JC, Marmorkos I, Peeters FM, Mori N, Eaves L, McDonnell P, Henini M, Sakai JW, Main PC, Surface science : a journal devoted to the physics and chemistry of interfaces 361/362, 247 (1996)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.925
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“Resonant tunnelling through D- states”. Lok JGS, Geim AK, Maan JC, Marmorkos I, Peeters FM, Mori N, Eaves L, McDonnell P, Henini M, Sakai JW, Main PC;, Surface science : a journal devoted to the physics and chemistry of interfaces
T2 –, 11th International Conference on the Electronic Properties of 2-Dimensional Systems (EP2DS XI), August 07-11, 1995, Univ. Nottingham, Nottingham, England 362, 247 (1996). http://doi.org/10.1016/0039-6028(96)00395-0
Abstract: We have studied tunnelling through Si donors incorporated in the quantum well of double barrier resonant tunnelling devices. In addition to a resonance associated with the ground state of a single donor (1s level), a novel donor-related resonance at a smaller binding energy is observed in high magnetic fields where it becomes dominant over the Is resonance. We attribute this novel feature to a D-minus state of a shallow donor.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.925
DOI: 10.1016/0039-6028(96)00395-0
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“Observation of superconductivity (Tc = 50K) in a new tetragonal alkaline-earth cuprate Sr0.8Ba1.2CuO3+\delta synthesised at ambient pressure”. Hodges JP, Slater PR, Edwards PP, Greaves C, Slaski M, Van Tendeloo G, Amelinckx S, Physica: C : superconductivity 260, 249 (1996). http://doi.org/10.1016/0921-4534(96)00118-9
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.942
Times cited: 7
DOI: 10.1016/0921-4534(96)00118-9
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“Analisis cuantitativo sin estandares de particulas individuales mediante microsonda de electrones”. Trincavelli JC, Van Grieken R page 273 (1996).
Keywords: H3 Book chapter; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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“Geometry and electronic structure of porphyrines and porphyrazines”. Lamoen D, Parrinello M, Chemical Physics Letters 248, 309 (1996)
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 1.897
Times cited: 46
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“Chemical characterization of individual aerosol particles in Central Siberia”. van Malderen H, Van Grieken R, Bufetov NV, Koutzenogii KP, Environmental science and technology 30, 312 (1996). http://doi.org/10.1021/ES950402K
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1021/ES950402K
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“Ion beam synthesis of β-SiC at 9500C and structural characterization”. Frangis N, Nejim A, Hemment PLF, Stoemenos J, van Landuyt J, Nuclear instruments and methods in physics research B112, 325 (1996)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization”. Frangis N, Nejim A, Hemment PLF, Stoemenos J, van Landuyt J, Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 –, Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing –, Fr 112, 325 (1996). http://doi.org/10.1016/0168-583X(95)01236-2
Abstract: The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.124
Times cited: 9
DOI: 10.1016/0168-583X(95)01236-2
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