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Author Goldoni, G.; Schweigert, V.; Peeters, F.M. doi  openurl
  Title Stability and dynamical properties of a double-layer Wigner crystal in two dimensions Type A1 Journal article
  Year 1996 Publication Surface science : a journal devoted to the physics and chemistry of interfaces Abbreviated Journal Surf Sci  
  Volume 361/362 Issue Pages 163-166  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1996UZ03300041 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0039-6028; ISBN Additional Links (down) UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.925 Times cited 4 Open Access  
  Notes Approved PHYSICS, APPLIED 28/145 Q1 #  
  Call Number UA @ lucian @ c:irua:15814 Serial 3118  
Permanent link to this record
 

 
Author Blom, F.A.P.; Peeters, F.M.; van de Zanden, K.; van Hove, M. doi  openurl
  Title Magneto-oscillations of the gate current in a laterally modulated two-dimensional electron gas Type A1 Journal article
  Year 1996 Publication Surface science : a journal devoted to the physics and chemistry of interfaces Abbreviated Journal Surf Sci  
  Volume 361/362 Issue Pages 851-854  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1996UZ03300202 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0039-6028; ISBN Additional Links (down) UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.925 Times cited 1 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:15812 Serial 1905  
Permanent link to this record
 

 
Author Aydin, H.; Bacaksiz, C.; Yagmurcukardes, N.; Karakaya, C.; Mermer, O.; Can, M.; Senger, R.T.; Sahin, H.; Selamet, Y. doi  openurl
  Title Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes Type A1 Journal article
  Year 2018 Publication Applied Surface Science Abbreviated Journal Appl Surf Sci  
  Volume 428 Issue 428 Pages 1010-1017  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4“bis(diphenylamino)-1, 1':3”-terpheny1-5' carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-y1-1,1':3'1'-terpheny1-5' carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current-voltage (I-V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)-V dependences were determined as 2.13,1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (Rs) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as n-n interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode. (C) 2017 Elsevier B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000415227000128 Publication Date 2017-09-29  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-4332 ISBN Additional Links (down) UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.387 Times cited 2 Open Access  
  Notes ; This work was supported by TUBITAK (The Scientific and Technical Research Council of Turkey) with project number 112T946. We also thank AQuReC (Applied Quantum Research Center) for Raman measurements. Computational resources were provided by TUBITAK ULAKBIM, High Performance and Grid Computing Center (TR-Grid e-Infrastructure). H.S. acknowledges support from Bilim Akademisi The Science Academy, Turkey under the BAGEP program. ; Approved Most recent IF: 3.387  
  Call Number UA @ lucian @ c:irua:154608UA @ admin @ c:irua:154608 Serial 5101  
Permanent link to this record
 

 
Author Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G.; Frangis, N.; van Landuyt, J. doi  openurl
  Title High crystalline quality erbium silicide films on (100) silicon grown in high vacuum Type A1 Journal article
  Year 1996 Publication Applied surface science Abbreviated Journal Appl Surf Sci  
  Volume 102 Issue Pages 151-155  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1996VJ86100034 Publication Date 2003-05-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-4332; ISBN Additional Links (down) UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.711 Times cited 14 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:15459 Serial 1423  
Permanent link to this record
 

 
Author Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Muret, P.; Nguyen, T.T.A. doi  openurl
  Title Electron microscopy characterisation of erbium silicide-thin films grown on a Si(111) substrate Type A1 Journal article
  Year 1996 Publication Applied surface science Abbreviated Journal Appl Surf Sci  
  Volume 102 Issue Pages 163-168  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1996VJ86100037 Publication Date 2003-05-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-4332; ISBN Additional Links (down) UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.711 Times cited 9 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:15458 Serial 953  
Permanent link to this record
 

 
Author Nematollahi, P.; Esrafili, M.D.; Neyts, E.C. pdf  url
doi  openurl
  Title The role of healed N-vacancy defective BC2N sheet and nanotube by NO molecule in oxidation of NO and CO gas molecules Type A1 Journal article
  Year 2018 Publication Surface science : a journal devoted to the physics and chemistry of interfaces Abbreviated Journal Surf Sci  
  Volume 672-673 Issue 672-673 Pages 39-46  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this study, the healing of N-vacancy boron carbonitride nanosheet (NV-BC2NNS) and nanotube (NV-BC2NNT) by NO molecule is studied by means of density functional theory calculations. Two different N-vacancies are considered in each of these structures in which the vacancy site is surrounded by either three B-atoms (NB) or by two B- and one C-atom (NBC). By means of the healed BC2NNS and BC2NNT as a support, the removal of two toxic gas molecules (NO and CO) are applicable. It should be noted that the obtained energy barriers of both healing and oxidizing processes are significantly lower than those of graphene, carbon nanotubes or boron nitride nanostructures. Also, at the end of the oxidation process, the pure BC2NNS or BC2NNT is obtained without any additional defects. Therefore, by using this method, we can considerably purify the defective BC2NNS/BC2NNT. Moreover, according to the thermochemistry calculations we can further confirm that the healing process of the NV-BC2NNS and NV-BC2NNT by NO are feasible at room temperature. So, we can claim that this study could be very helpful in both purifying the defective BC2NNS/BC2NNT while in the same effort removing toxic NO and CO gases.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000432614700007 Publication Date 2018-03-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0039-6028 ISBN Additional Links (down) UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.062 Times cited 1 Open Access OpenAccess  
  Notes Approved Most recent IF: 2.062  
  Call Number UA @ lucian @ c:irua:151478 Serial 5044  
Permanent link to this record
 

 
Author Sathiyamoorthy, S.; Girijakumari, G.; Kannan, P.; Venugopal, K.; Thiruvottriyur Shanmugam, S.; Veluswamy, P.; De Wael, K.; Ikeda, H. pdf  url
doi  openurl
  Title Tailoring the functional properties of polyurethane foam with dispersions of carbon nanofiber for power generator applications Type A1 Journal article
  Year 2018 Publication Applied surface science Abbreviated Journal Appl Surf Sci  
  Volume 449 Issue 449 Pages 507-513  
  Keywords A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)  
  Abstract To produce effective thermoelectric nanocomposites, carbon nanofibers (CNF) incorporated polyurethane (PU) foams with nanocomposites are prepared via in-situ polymerization method to create a synergy that would produce a high thermopower. The formation mechanism of foams, the reaction kinetics, and the physical properties such as density and water absorption studied before and after CNF incorporation. The microscopy images showed a uniform dispersion of CNF in the PU matrix of the prepared foams. Spectroscopic studies such as X-ray photoelectron and laser Raman spectroscopy suggested the existence of a tight intermolecular binding interaction between the carbon nanofibers and the PU matrix in the prepared composite foams. It found that the thermopower is directly dependent on the concentration of carbon nanofiber since, with rising concentration of 1%3%, the coefficient values increased from 1.2 μV/K to 11.9 μV/K respectively, a value higher than that of earlier report. This unique nanocomposite offers a new opportunity to recycle waste heat in portable/wearable electronics and other applications, which will broaden the development of low weight and mechanical flexibility.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000438025400064 Publication Date 2018-02-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-4332 ISBN Additional Links (down) UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.387 Times cited 4 Open Access  
  Notes ; ; Approved Most recent IF: 3.387  
  Call Number UA @ admin @ c:irua:151287 Serial 5868  
Permanent link to this record
 

 
Author Nematollahi, P.; Neyts, E.C. doi  openurl
  Title A comparative DFT study on CO oxidation reaction over Si-doped BC2N nanosheet and nanotube Type A1 Journal article
  Year 2018 Publication Applied surface science Abbreviated Journal Appl Surf Sci  
  Volume 439 Issue 439 Pages 934-945  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this study, we performed density functional theory (DFT) calculations to investigate different reaction mechanisms of CO oxidation catalyzed by the Si atom embedded defective BC2N nanostructures as well as the analysis of the structural and electronic properties. The structures of all the complexes are optimized and characterized by frequency calculations at the M062X/6-31G* computational level. Also, The electronic structures and thermodynamic parameters of adsorbed CO and O-2 molecules over Si-doped BC2N nanostructures are examined in detail. Moreover, to investigate the curvature effect on the CO oxidation reaction, all the adsorption and CO oxidation reactions on a finite-sized armchair (6,6) Si-BC2NNT are also studied. Our results indicate that there can be two possible pathways for the CO oxidation with O-2 molecule: O-2(g) + CO(g) -> O-2(ads) + CO(ads) -> CO2(g) + O-(ads) and O-(ads) + CO(g) -> CO2(g). The first reaction proceeds via the Langmuir-Hinshelwood (LH) mechanism while the second goes through the Eley-Rideal (ER) mechanism. On the other hand, by increasing the tube diameter, the energy barrier increases due to the strong adsorption energy of the O-2 molecule which is related to its dissociation over the tube surface. Our calculations indicate that the two step energy barrier of the oxidation reaction over Si-BC2NNS is less than that over the Si-BC2NNT. Hence, Si-BC2NNS may serve as an efficient and highly activated substrate to CO oxidation rather than (4,4) Si-BC2NNT. (C) 2018 Elsevier B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000427457100112 Publication Date 2018-01-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-4332 ISBN Additional Links (down) UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.387 Times cited 8 Open Access Not_Open_Access  
  Notes Approved Most recent IF: 3.387  
  Call Number UA @ lucian @ c:irua:150745 Serial 4960  
Permanent link to this record
 

 
Author Zhang, X.B.; Vasiliev, A.L.; Van Tendeloo, G.; He, Y.; Yu, L.-M.; Thiry, P.A. doi  openurl
  Title EM, XPS and LEED study of deposition of Ag on hydrogenated Si substrate prepared by wet chemical treatments Type A1 Journal article
  Year 1995 Publication Surface science : a journal devoted to the physics and chemistry of interfaces Abbreviated Journal Surf Sci  
  Volume 340 Issue Pages 317-327  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1995TA17600013 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0039-6028; ISBN Additional Links (down) UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.925 Times cited 11 Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:13319 Serial 1032  
Permanent link to this record
 

 
Author Goessens, C.; Schryvers, D.; van Landuyt, J.; Amelinckx, S.; de Keyzer, R. doi  openurl
  Title Long period surface ordering of iodine ions in mixed tabular AgBr-AgBrI microcrystals Type A1 Journal article
  Year 1995 Publication Surface science : a journal devoted to the physics and chemistry of interfaces Abbreviated Journal Surf Sci  
  Volume 337 Issue Pages 153-165  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1995RQ74900024 Publication Date 2003-05-13  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0039-6028; ISBN Additional Links (down) UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.925 Times cited 10 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:13162 Serial 1836  
Permanent link to this record
 

 
Author Scalise, E.; Cinquanta, E.; Houssa, M.; van den Broek, B.; Chiappe, D.; Grazianetti, C.; Pourtois, G.; Ealet, B.; Molle, A.; Fanciulli, M.; Afanas’ev, V.V.; Stesmans, A.; doi  openurl
  Title Vibrational properties of epitaxial silicene layers on (111) Ag Type A1 Journal article
  Year 2014 Publication Applied surface science Abbreviated Journal Appl Surf Sci  
  Volume 291 Issue Pages 113-117  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The electronic and vibrational properties of three different reconstructions of silicene on Ag(1 1 1) are calculated and compared to experimental results. The 2D epitaxial silicon layers, namely the (4 x 4), (root 13 x root 13) and (2 root 3 x 2 root 3) phases, exhibit different electronic and vibrational properties. Few peaks in the experimental Raman spectrum are identified and attributed to the vibrational modes of the silicene layers. The position and behavior of the Raman peaks with respect to the excitation energy are shown to be a fundamental tool to investigate and discern different phases of silicene on Ag( 1 1 1). (C) 2013 Elsevier B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000329327700025 Publication Date 2013-09-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-4332; ISBN Additional Links (down) UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.387 Times cited 36 Open Access  
  Notes Approved Most recent IF: 3.387; 2014 IF: 2.711  
  Call Number UA @ lucian @ c:irua:113767 Serial 3843  
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Author van den Broek, B.; Houssa, M.; Scalise, E.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. doi  openurl
  Title First-principles electronic functionalization of silicene and germanene by adatom chemisorption Type A1 Journal article
  Year 2014 Publication Applied surface science Abbreviated Journal Appl Surf Sci  
  Volume 291 Issue Pages 104-108  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract This study presents first-principles results on the electronic functionalization of silicene and germanene monolayers by means of chemisorption of adatom species H, Li, F, Sc, Ti, V. Three general adatom-monolayer configurations are considered, each having its distinct effect on the electronic structure, yielding metallic or semiconducting dispersions depending on the adatom species and configuration. The induced bandgap is a (in)direct F gap ranging from 0.2 to 2.3 eV for both silicene and germanene. In general the alternating configuration was found to be the most energetically stable. The boatlike and chairlike conformers are degenerate with the former having anisotropic effective carrier masses. The top configuration leads to the planar monolayer and predominately to a gapped dispersion. The hollow configuration with V adatoms retains the Dirac cone, but with strong orbital planar hybridization at the Fermi level. We also observe a planar surface state the Fermi level for the latter systems. (C) 2013 Elsevier B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000329327700023 Publication Date 2013-09-17  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-4332; ISBN Additional Links (down) UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.387 Times cited 32 Open Access  
  Notes Approved Most recent IF: 3.387; 2014 IF: 2.711  
  Call Number UA @ lucian @ c:irua:113766 Serial 1208  
Permanent link to this record
 

 
Author Houssa, M.; van den Broek, B.; Scalise, E.; Ealet, B.; Pourtois, G.; Chiappe, D.; Cinquanta, E.; Grazianetti, C.; Fanciulli, M.; Molle, A.; Afanas’ev, V.V.; Stesmans, A.; doi  openurl
  Title Theoretical aspects of graphene-like group IV semiconductors Type A1 Journal article
  Year 2014 Publication Applied surface science Abbreviated Journal Appl Surf Sci  
  Volume 291 Issue Pages 98-103  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Silicene and germanene are the silicon and germanium counterparts of graphene, respectively. Recent experimental works have reported the growth of silicene on (1 1 1)Ag surfaces with different atomic configurations, depending on the growth temperature and surface coverage. We first theoretically study the structural and electronic properties of silicene on (1 1 1) Ag surfaces, focusing on the (4 x 4) silicene/Ag structure. Due to symmetry breaking in the silicene layer (nonequivalent number of top and bottom Si atoms), the corrugated silicene layer, with the Ag substrate removed, is predicted to be semiconducting, with a computed energy bandgap of about 0.3 eV. However, the hybridization between the Si 3p orbitals and the Ag 5s orbital in the silicene/(1 1 1)Ag slab model leads to an overall metallic system, with a distribution of local electronic density of states, which is related to the slightly disordered structure of the silicene layer on the (1 1 1)Ag surface. We next study the interaction of silicene and germanene with different hexagonal non-metallic substrates, namely ZnS and ZnSe. On reconstructed (0 0 0 1)ZnS or ZnSe surfaces, which should be more energetically stable for very thin layers, silicene and germanene are found to be semiconducting. Remarkably, the nature and magnitude of their energy bandgap can be controlled by an out-of-plane electric field, an important finding for the potential use of these materials in nanoelectronic devices. (C) 2013 Elsevier B. V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000329327700022 Publication Date 2013-09-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-4332; ISBN Additional Links (down) UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.387 Times cited 20 Open Access  
  Notes Approved Most recent IF: 3.387; 2014 IF: 2.711  
  Call Number UA @ lucian @ c:irua:113765 Serial 3603  
Permanent link to this record
 

 
Author Vanhellemont, J.; Maes, H.E.; Schaekers, M.; Armigliato, A.; Cerva, H.; Cullis, A.; de Sande, J.; Dinges, H.; Hallais, J.; Nayar, V.; Pickering, C.; Stehlé, J.L.; Van Landuyt, J.; Walker, C.; Werner, H.; Salieri, P.; pdf  doi
openurl 
  Title Round-robin investigation of silicon-oxide on silicon reference materials for ellipsometry Type A1 Journal article
  Year 1993 Publication Applied surface science T2 – SYMP ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS ANALYSIS AND, FABRICATION PROCESS CONTROL, AT THE 1992 SPRING CONF OF THE EUROPEAN, MATERIALS RESEARCH SOC, JUN 02-05, 1992, STRASBOURG, FRANCE Abbreviated Journal Appl Surf Sci  
  Volume 63 Issue 1-4 Pages 45-51  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The main results and conclusions are presented of a round robin study of silicon oxide on silicon reference samples for ellipsometry. The oxide films with nominal thicknesses of 10, 50 and 120 nm are grown by thermal oxidation. The oxide film thicknesses have been determined by single wavelength ellipsometry (SWE), by spectroscopic ellipsometry (SE) and by cross-sectional conventional and high-resolution transmission electron microscopy (TEM and HREM) in different laboratories. The main conclusions are that special precautions have to be taken in order to use TEM as a reliable thickness measurement technique; that single wavelength ellipsometry can be used with great accuracy and reproducibility for the 50 and 120 nm film thicknesses but that it shows some inherent problems for the 10 nm films; and that spectroscopic ellipsometry showed for all film thicknesses an accuracy and reproducibility which is clearly superior to that of SWE.  
  Address  
  Corporate Author Thesis  
  Publisher Elsevier science bv Place of Publication Amsterdam Editor  
  Language Wos A1993KF03400009 Publication Date 2002-10-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-4332; ISBN Additional Links (down) UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.711 Times cited 13 Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:104539 Serial 2932  
Permanent link to this record
 

 
Author Muret, P.; Nguyen, T.T.A.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J. pdf  doi
openurl 
  Title Photoelectric and electrical responses of several erbium silicide/silicon interfaces Type A1 Journal article
  Year 1996 Publication Applied surface science T2 – International Symposium on Si Heterostructures – From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE Abbreviated Journal Appl Surf Sci  
  Volume 102 Issue Pages 173-177  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract In this work, photoelectric yield and electrical properties of several types of epitaxial erbium silicide on silicon Schottky diodes are studied, Different preparation conditions are used simultaneously on n- and p-Si(111) substrates for the 200 Angstrom thick silicide films. A last type of sample consists in 1.3 monolayer of epitaxial silicide with root 3 X root 3 superstructure on the Si substrate and covered by silver on the top. Photocurrent measurements are done as a function of photon energy at several temperatures. All these samples show barrier heights near 1 eV on p-type Si, even for the interface comprising only 1.3 monolayer of silicide whereas barrier heights on n-rype Si span the range from 0.28 to 0.67 eV for this last kind of sample, the sum of the barriers always exceeding the silicon band gap, These photoelectric results are confirmed by electrical characterisations, All these results show that the Fermi level is pinned 0.1 eV below the conduction band edge on p-type Si but shifts to various positions lower within the band gap on n-type Si. This fact leads to the hypothesis of a density of -7 interface states close to the charge change in the Si depletion zone from p- to n-type, namely 10(12) eV(-1) cm(-2). Although some inhomogeneities and defects at the interface are detected by electron microscopy for samples annealed at 750 degrees C, Fermi level position seems rather insensitive to the structural details of the interface while the silicide thickness plays a role on n-type Si.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1996VJ86100039 Publication Date 2003-05-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-4332; ISBN Additional Links (down) UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.711 Times cited 3 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:104392 Serial 2611  
Permanent link to this record
 

 
Author Helm, M.; Peeters, F.M.; de Rosa, F.; Colas, E.; Harbison, J.P.; Florez, L.T. pdf  doi
openurl 
  Title Infrared-spectroscopy of subbands, minibands, and donors in GaAs/AlGaAs superlattices Type A1 Journal article
  Year 1992 Publication Surface science : a journal devoted to the physics and chemistry of interfaces T2 – 9TH INTERNATIONAL CONF ON THE ELECTRONIC PROPERTIES OF TWO-DIMENSIONAL, SYSTEMS ( EP2DS-9 ) / 5TH INTERNATIONAL CONF ON MODULATED SEMICONDUCTOR, STRUCTURES ( MSS-5 ), JUL Abbreviated Journal Surf Sci  
  Volume 263 Issue 1-3 Pages 518-526  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract A far-infrared absorption study of electrons in lightly-doped GaAs/Al0.3Ga0.7As superlattices is presented. Both weakly and strongly coupled superlattices are investigated, and the difference between intersubband transitions and transitions between extended minibands is demonstrated. At low temperatures, the absorption spectra are dominated by donor transitions. The 1s-2p(z) transition, which is intimately related to the intersubband transition, is observed. All experimental data are compared to an envelope function calculation for the miniband structure and a variational calculation for the donor energies. Excellent agreement between experiment and theory is achieved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1992HF18600104 Publication Date 2002-10-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0039-6028; ISBN Additional Links (down) UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.925 Times cited 5 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:103055 Serial 1665  
Permanent link to this record
 

 
Author Aichele, T.; Robin, I.-C.; Bougerol, C.; André, R.; Tatarenko, S.; Van Tendeloo, G. pdf  doi
openurl 
  Title CdSe quantum dot formation induced by amorphous Se Type A1 Journal article
  Year 2007 Publication Surface science : a journal devoted to the physics and chemistry of interfaces T2 – International Conference on NANO-Structures Self Assembling, JUL 02-06, 2006, Aix en Provence, FRANCE Abbreviated Journal Surf Sci  
  Volume 601 Issue 13 Pages 2664-2666  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The mechanism allowing the transition from a two-dimensional strained layer of CdSe on ZnSe to self-assembled islands induced by the use of amorphous selenium is still not fully understood. For a better understanding, atomic force microscopy and transmission electron microscopy studies were performed on CdSe films with a thickness close to that for quantum dot formation. Below this thickness, the sample surface results in undulations along the [110] crystal direction, while few quantum dots are situated in the wave valleys. Plan view transmission electron microscopy studies reveal a strong anisotropy of the islands and show that the Se desorption conditions are crucial. (C) 2006 Elsevier B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000248030100027 Publication Date 2006-12-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0039-6028; ISBN Additional Links (down) UA library record; WoS full record  
  Impact Factor 2.062 Times cited Open Access  
  Notes Approved Most recent IF: 2.062; 2007 IF: 1.855  
  Call Number UA @ lucian @ c:irua:102668 Serial 304  
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Author Bittencourt, C.; Felten, A.; Douhard, B.; Colomer, J.-F.; Van Tendeloo, G.; Drube, W.; Ghijsen, J.; Pireaux, J.-J. pdf  doi
openurl 
  Title Metallic nanoparticles on plasma treated carbon nanotubes : $Nano2hybrids$ Type A1 Journal article
  Year 2007 Publication Surface science : a journal devoted to the physics and chemistry of interfaces T2 – International Conference on NANO-Structures Self Assembling, JUL 02-06, 2006, Aix en Provence, FRANCE Abbreviated Journal Surf Sci  
  Volume 601 Issue 13 Pages 2800-2804  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Multi-wall carbon nanotubes (MWCNTs) were decorated with metal clusters by thermal evaporation. Transmission electron microscopy (TEM) shows that the nature and extent of metal coverage can be varied by plasma treating the MWCNT surface. The metal clusters on oxygen plasma treated arc-discharge MWCNTs have a more dense distribution than the clusters evaporated on as-synthesized are-discharge MWCNTs. In contrast, the plasma treatment did not affect the cluster distribution on CVD MWCNTs. Analyses of the valence band and the core levels by X-ray photoelectron spectroscopy suggest poor charge transfer between gold clusters and MWCNTs; on the contrary suggest good charge transfer between Ni clusters and MWCNTs. (c) 2007 Elsevier B. V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000248030100055 Publication Date 2006-12-21  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0039-6028; ISBN Additional Links (down) UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.062 Times cited 44 Open Access  
  Notes Pai-V 1 Approved Most recent IF: 2.062; 2007 IF: 1.855  
  Call Number UA @ lucian @ c:irua:102663 Serial 2011  
Permanent link to this record
 

 
Author Vasiliev, A.L.; Stepantsov, E.A.; Ivanov, Z.G.; Verbist, K.; Van Tendeloo, G.; Olsson, E. openurl 
  Title The microstructure and interfaces of intermediate layers in sapphire bicrystals Type A1 Journal article
  Year 1997 Publication Applied surface science Abbreviated Journal Appl Surf Sci  
  Volume 119 Issue Pages 215-218  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1997YC74900006 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-4332 ISBN Additional Links (down) UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.387 Times cited 2 Open Access  
  Notes Approved Most recent IF: 3.387; 1997 IF: 0.873  
  Call Number UA @ lucian @ c:irua:21450 Serial 2055  
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Author Lok, J.G.S.; Geim, A.K.; Maan, J.C.; Marmorkos, I.; Peeters, F.M.; Mori, N.; Eaves, L.; McDonnell, P.; Henini, M.; Sakai, J.W.; Main, P.C. openurl 
  Title Resonant tunneling through D- states Type A1 Journal article
  Year 1996 Publication Surface science : a journal devoted to the physics and chemistry of interfaces Abbreviated Journal Surf Sci  
  Volume 361/362 Issue Pages 247-250  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1996UZ03300061 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0039-6028 ISBN Additional Links (down) UA library record; WoS full record;  
  Impact Factor 1.925 Times cited Open Access  
  Notes Approved INSTRUMENTS & INSTRUMENTATION 31/56 Q3 # NUCLEAR SCIENCE & TECHNOLOGY 9/32 Q2 # PHYSICS, PARTICLES & FIELDS 24/28 Q4 # SPECTROSCOPY 28/43 Q3 #  
  Call Number UA @ lucian @ c:irua:15813 Serial 2894  
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