Number of records found: 50
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Measurement of atomic electric fields and charge densities from average momentum transfers using scanning transmission electron microscopy”. Muller-Caspary K, Krause FF, Grieb T, Loffler S, Schowalter M, Béché, A, Galioit V, Marquardt D, Zweck J, Schattschneider P, Verbeeck J, Rosenauer A, Ultramicroscopy 178, 62 (2016). http://doi.org/10.1016/j.ultramic.2016.05.004
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Homogeneity and composition of AlInGaN : a multiprobe nanostructure study”. Krause FF, Ahl JP, Tytko D, Choi PP, Egoavil R, Schowalter M, Mehrtens T, Müller-Caspary K, Verbeeck J, Raabe D, Hertkorn J, Engl K, Rosenauer A, Ultramicroscopy 156, 29 (2015). http://doi.org/10.1016/j.ultramic.2015.04.012
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Atomic electric fields revealed by a quantum mechanical approach to electron picodiffraction”. Mueller K, Krause FF, Béché, A, Schowalter M, Galioit V, Loeffler S, Verbeeck J, Zweck J, Schattschneider P, Rosenauer A, Nature communications 5, 5653 (2014). http://doi.org/10.1038/ncomms6653
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Optimal experimental design for the detection of light atoms from high-resolution scanning transmission electron microscopy images”. Gonnissen J, de Backer A, den Dekker AJ, Martinez GT, Rosenauer A, Sijbers J, Van Aert S, Applied physics letters 105, 063116 (2014). http://doi.org/10.1063/1.4892884
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A memory efficient method for fully three-dimensional object reconstruction with HAADF STEM”. Van den Broek W, Rosenauer A, Van Aert S, Sijbers J, van Dyck D, Ultramicroscopy 141, 22 (2014). http://doi.org/10.1016/j.ultramic.2014.03.008
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The effect of probe inaccuracies on the quantitative model-based analysis of high angle annular dark field scanning transmission electron microscopy images”. Martinez GT, de Backer A, Rosenauer A, Verbeeck J, Van Aert S, Micron 63, 57 (2014). http://doi.org/10.1016/j.micron.2013.12.009
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Quantitative composition determination at the atomic level using model-based high-angle annular dark field scanning transmission electron microscopy”. Martinez GT, Rosenauer A, de Backer A, Verbeeck J, Van Aert S, Ultramicroscopy 137, 12 (2014). http://doi.org/10.1016/j.ultramic.2013.11.001
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Atom counting in HAADF STEM using a statistical model-based approach : methodology, possibilities, and inherent limitations”. de Backer A, Martinez GT, Rosenauer A, Van Aert S, Ultramicroscopy 134, 23 (2013). http://doi.org/10.1016/j.ultramic.2013.05.003
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Procedure to count atoms with trustworthy single-atom sensitivity”. Van Aert S, de Backer A, Martinez GT, Goris B, Bals S, Van Tendeloo G, Rosenauer A, Physical review : B : condensed matter and materials physics 87, 064107 (2013). http://doi.org/10.1103/PhysRevB.87.064107
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Present state of the composition evaluation of ternary semiconductor nanostructures by lattice fringe analysis”. Rosenauer A, Gerthsen D, Van Aert S, van Dyck D, den Dekker AJ, Institute of physics conference series , 19 (2003)
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Calculation of Debye-Waller temperature factors for GaAs”. Schowalter M, Rosenauer A, Titantah JT, Lamoen D, Springer proceedings in physics 120, 195 (2008)
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Effect of temperature on the 002 electron structure factor and its consequence for the quantification of ternary and quaternary III-V crystals”. Titantah JT, Lamoen D, Schowalter M, Rosenauer A, Springer proceedings in physics 120, 189 (2008)
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First-principles calculations of 002 structure factors for electron scattering in strained InxGa1-xAs”. Rosenauer A, Schowalter M, Glas F, Lamoen D, 107, 151 (2005)
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Ab initio computation of the mean inner Coulomb potential of technological important semiconductors”. Schowalter M, Rosenauer A, Lamoen D, Kruse P, Gerthsen D, 1007, 233 (2005)
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Measurement of the mean inner potential of ZnO nanorods by transmission electron holography”. Müller E, Kruse P, Gerthsen D, Schowalter M, Rosenauer A, Lamoen D, Kling R, Microscopy of Semiconducting Materials 107SPRINGER PROCEEDINGS IN PHYSICS, 303 (2005)
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Ab initio computation of the mean inner Coulomb potential of wurtzite-type semiconductors and gold”. Schowalter M, Rosenauer A, Lamoen D, Kruse P, Gerthsen D, Applied Physics Letters 88, Artn 232108 (2006). http://doi.org/10.1063/1.2210453
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Determination of the mean inner potential in III-V semiconductors, Si and Ge by density functional theory and electron holography”. Kruse P, Schowalter M, Lamoen D, Rosenauer A, Gerthsen D, Ultramicroscopy 106, 105 (2006). http://doi.org/10.1016/j.ultramic.2005.06.057
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First-principles calculations of 002 structure factors for electron scattering in strained InxGa1-xAs”. Rosenauer A, Schowalter M, Glas F, Lamoen D, Physical Review B 72, 1 (2005). http://doi.org/10.1103/PhysRevB.72.085326
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Measurement of the mean inner potential of ZnO nanorods by transmission electron holography”. Müller E, Kruse P, Gerthsen D, Schowalter M, Rosenauer A, Lamoen D, Kling R, Waag A, Applied Physics Letters 86 (2005). http://doi.org/10.1063/1.1901820
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First-principles calculations of the mean inner Coulomb potential for sphalerite type II.VI semiconductors”. Schowalter M, Lamoen D, Kruse P, Gerthsen D, Rosenauer A, Applied Physics Letters 85, 4938 (2004). http://doi.org/10.1063/1.1823598
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