“Depth strain profile with sub-nm resolution in a thin silicon film using medium energy ion scattering”. Jalabert D, Pelloux-Gervais D, Béché, A, Hartmann JM, Gergaud P, Rouvière JL, Canut B, Physica Status Solidi A-Applications And Materials Science 209, 265 (2012). http://doi.org/10.1002/PSSA.201127502
Abstract: The depth strain profile in silicon from the Si (001) substrate to the surface of a 2 nm thick Si/12 nm thick SiGe/bulk Si heterostructure has been determined by medium energy ion scattering (MEIS). It shows with sub-nanometer resolution and high strain sensitivity that the thin Si cap presents residual compressive strain caused by Ge diffusion coming from the fully strained SiGe layer underneath. The strain state of the SiGe buffer have been checked by X-ray diffraction (XRD) and nano-beam electron diffraction (NBED) measurements.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
Times cited: 3
DOI: 10.1002/PSSA.201127502
|
“Field mapping with nanometer-scale resolution for the next generation of electronic devices”. Cooper D, de la Peña F, Béché, A, Rouvière J-L, Servanton G, Pantel R, Morin P, Nano letters 11, 4585 (2011). http://doi.org/10.1021/NL201813W
Abstract: In order to improve the performance of todays nanoscaled semiconductor devices, characterization techniques that can provide information about the position and activity of dopant atoms and the strain fields are essential. Here we demonstrate that by using a modern transmission electron microscope it is possible to apply multiple techniques to advanced materials systems in order to provide information about the structure, fields, and composition with nanometer-scale resolution. Off-axis electron holography has been used to map the active dopant potentials in state-of-the-art semiconductor devices with 1 nm resolution. These dopant maps have been compared to electron energy loss spectroscopy maps that show the positions of the dopant atoms. The strain fields in the devices have been measured by both dark field electron holography and nanobeam electron diffraction.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 12.712
Times cited: 12
DOI: 10.1021/NL201813W
|
Clark L (2016) The creation and quantication of electron vortex beams, towards their application. Antwerpen
Keywords: Doctoral thesis; Electron microscopy for materials research (EMAT)
|
Grieten E (2016) Modifications to the nano-texture of old photographs & daguerreotypes by degradation and atmospheric plasma treatment. Universiteit Antwerpen, Faculteit Ontwerpwetenschappen, Opleiding Conservatie-Restauratie, Antwerpen
Keywords: Doctoral thesis; Art; Electron microscopy for materials research (EMAT)
|
Juchtmans R (2016) Novel applications of vortex beams and spiral phase plates in transmission electron microscopy. Antwerpen
Keywords: Doctoral thesis; Electron microscopy for materials research (EMAT)
|
“Engineering properties by long range symmetry propagation initiated at perovskite heterostructure interface”. Liao ZL, Green RJ, Gauquelin N, Gonnissen J, Van Aert S, Verbeeck J, et al, Advanced functional materials , 1 (2016)
Abstract: In epitaxial thin film systems, the crystal structure and its symmetry deviate from the bulk counterpart due to various mechanisms such as epitaxial strain and interfacial structural coupling, which induce an accompanying change in their properties. In perovskite materials, the crystal symmetry can be described by rotations of 6-fold coordinated transition metal oxygen octahedra, which are found to be altered at interfaces. Here, we unravel how the local oxygen octahedral coupling (OOC) at perovskite heterostructural interfaces initiates a different symmetry in epitaxial films and provide design rules to induce various symmetries in thin films by careful selecting appropriate combinations of substrate/buffer/film. Very interestingly we discovered that these combinations lead to symmetry changes throughout the full thickness of the film. Our results provide a deep insight into understanding the origin of induced crystal symmetry in a perovskite heterostructure and an intelligent route to achieve unique functional properties.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 12.124
|
“Ciliary white light generated during femtosecond laser ablation on transparent dielectrics”. Liu Y, Brelet Y, He Z, Yu L, Mitryukovskiy S, Houard A, Forestier B, Couairon A, Mysyrowicz A, 2013 Conference On And International Quantum Electronics Conference Lasers And Electro-optics Europe (cleo Europe/iqec) (2013)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
|
Meledina M (2016) Advanced electron microscopy characterization of catalysts. Antwerpen
Keywords: Doctoral thesis; Electron microscopy for materials research (EMAT)
|
“Crystal structure of the double Hg-layer copper oxide superconductor (Hg, Pr)2Ba2(Y, Ca)Cu2O8-\delta as a function of doping”. Radaelli PG, Marezio M, Tholence JL, de Brion S, Santoro A, Huang Q, Capponi JJ, Chaillout C, Krekels T, Van Tendeloo G, The journal of physics and chemistry of solids 56, 1471 (1995)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.853
Times cited: 16
|
“A new way of synthesis and characterization of superconducting oxyfluoride Sr2Cu(O,F)4+\delta”. Ardashnikova EI, Lubarsky SV, Denisenko DI, Shpanchenko RV, Antipov EV, Van Tendeloo G, Physica: C : superconductivity 253, 259 (1995)
Abstract: Superconducting Cu mixed oxyfluoride, Sr,Cu(O, F)(4+delta), was Obtained via fluorination of Sr2CuO3 by XeF2 in the 100-250 degrees C temperature range in a closed Ni container. The prepared samples exhibited a lower T-c in comparison with earlier reported values. Different samples in the Sr-Cu-O-F system were prepared by a solid-state reaction at 220-400 degrees C, but no formation of the oxyfluoride was detected even with an addition of xenon difluoride. These data allow one to draw conclusions on the metastability of the oxyfluoride under the conditions used, Electron microscopy and X-ray powder diffraction studies revealed large amounts of badly crystallized SrF2; this could be a reason for the small superconducting volume fraction as well as for the inhomogeneous distribution of the anions.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.942
Times cited: 29
|
“Cation and anion disorder in HbBa2Can-1CunO2n+2+\delta”. Marezio M, Alexandre ET, Bordet P, Capponi J-J, Chaillout C, Kopnin EM, Loureiro SM, Radaelli PG, Van Tendeloo G, Journal of superconductivity 8 (1995)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 4
|
“Atomic resolution of interfaces in ceramic-superconductors”. Van Tendeloo G, Krekels T, Amelinckx S, Hervieu M, Raveau B, Greaves C, , 35 (1995)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
|
“Columnar defects and irreversibility lines in Ti-based superconductors”. Wahl A, Hervieu M, Van Tendeloo G, Hardy V, Provost J, Groult D, Simon C, Raveau B, Radiation effects and defects in solids 133, 293 (1995)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.513
Times cited: 11
|
“Crystal chemistry of mercury based layered cuprates and oxycarbonates”. Raveau B, Hervieu M, Michel C, Martin C, Maignan A, Van Tendeloo G Narosa, New Delhi, page 132 (1995).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
|
“Fullerenen: een nieuwe vorm van koolstof”. Van Tendeloo G, Echo 3: essays voor chemie-onderwijs , 79 (1995)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
|
“Point defect reactions in silicon studies in situ by high flux electron irradiation in high voltage transmission electron microscope”. Vanhellemont J, Romano-Rodriguez A, Fedina L, van Landuyt J, Aseev A, Materials science and technology 11, 1194 (1995)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 7
|
Van Boxem R (2015) Electron vortex beams : an in-depth theoretical study. Antwerpen
Keywords: Doctoral thesis; Electron microscopy for materials research (EMAT)
|
“A transmission electron microscopy study of tweed-like structures in Al62Cu17.5CO17.5Si3 decagonal quasicrystals”. Zhang Z, Geng W, van Landuyt J, Van Tendeloo G, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 71, 1177 (1995)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 7
|
“Structural aspects of carbon nanotubes”. Bernaerts D, Amelinckx S, Zhang XB, Van Tendeloo G, van Landuyt J, , 551 (1995)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
|
“The morphology, structure and texture of carbon nanotubes: an electron microscopy study”. Amelinckx S, Bernaerts D, Van Tendeloo G, van Landuyt J, Lucas AA, Mathot M, Lambin P, , 515 (1995)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
|
“Process variability in Cu2ZnSnSe4 solar cell devices: Electrical and structural investigations”. Brammertz G, Buffiere M, Verbist C, Bekaert J, Batuk M, Hadermann J, et al, The conference record of the IEEE Photovoltaic Specialists Conference
T2 –, IEEE 42nd Photovoltaic Specialist Conference (PVSC), JUN 14-19, 2015, New Orleans, LA (2015)
Abstract: We have fabricated 9.7% efficient Cu2ZnSnSe4/CdS/ZnO solar cells by H2Se selenization of sequentially sputtered metal layers. Despite the good efficiency obtained, process control appears to be difficult. In the present contribution we compare the electrical and physical properties of two devices with nominal same fabrication procedure, but 1% and 9.7% power conversion efficiency respectively. We identify the problem of the lower performing device to be the segregation of ZnSe phases at the backside of the sample. This ZnSe seems to be the reason for the strong bias dependent photocurrent observed in the lower performing devices, as it adds a potential barrier for carrier collection. The reason for the different behavior of the two nominally same devices is not fully understood, but speculated to be related to sputtering variability.
Keywords: P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
|
Van Havenbergh K (2015) Influence of silicon nanoparticle coating on the electrolyte decomposition in Li-ion batteries. Antwerpen
Keywords: Doctoral thesis; Electron microscopy for materials research (EMAT)
|
Kurttepeli M (2015) Carbon based materials and hybrid nanostructures investigated by advanced transmission electron microscopy. Antwerpen
Keywords: Doctoral thesis; Electron microscopy for materials research (EMAT)
|
Guzzinati G (2015) Exploring electron beam shaping in transmission electron microscopy. Antwerpen
Keywords: Doctoral thesis; Electron microscopy for materials research (EMAT)
|
Altantzis T (2015) Three-dimensional characterization of atomic clusters, nanoparticles and their assemblies by advanced transmission electron microscopy. Antwerpen
Keywords: Doctoral thesis; Electron microscopy for materials research (EMAT)
|
“Towards quantitative high resolution electron microscopy?”.Van Tendeloo G, op de Beeck M, De Meulenaere P, van Dyck D, Institute of physics conference series 147, 67 (1995)
Abstract: The basics of the interpretation of high resolution images showing detail of the order of 0.1 nm are shortly explained here. The use of a field emission source, a CCD camera and an adapted reconstruction method for restoring the projected crystal potential (focus variation method) allows a quantitative interpretation of HREM images. Examples of partially disordered alloys and carbonate ordering in high Tc superconductors are presented.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
|
“Quantitative annular dark field scanning transmission electron microscopy for nanoparticle atom-counting : what are the limits?”.de Backer A, De wael A, Gonnissen J, Martinez GT, Béché, A, MacArthur KE, Jones L, Nellist PD, Van Aert S, Journal of physics : conference series 644, 012034 (2015). http://doi.org/10.1088/1742-6596/644/012034
Abstract: Quantitative atomic resolution annular dark field scanning transmission electron microscopy (ADF STEM) has become a powerful technique for nanoparticle atom-counting. However, a lot of nanoparticles provide a severe characterisation challenge because of their limited size and beam sensitivity. Therefore, quantitative ADF STEM may greatly benefit from statistical detection theory in order to optimise the instrumental microscope settings such that the incoming electron dose can be kept as low as possible whilst still retaining single-atom precision. The principles of detection theory are used to quantify the probability of error for atom-counting. This enables us to decide between different image performance measures and to optimise the experimental detector settings for atom-counting in ADF STEM in an objective manner. To demonstrate this, ADF STEM imaging of an industrial catalyst has been conducted using the near-optimal detector settings. For this experiment, we discussed the limits for atomcounting diagnosed by combining a thorough statistical method and detailed image simulations.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
DOI: 10.1088/1742-6596/644/012034
|
Govaerts K (2015) First-principles study of homologous series of layered Bi-Sb-Te-Se and Sn-O structures. Antwerpen
Keywords: Doctoral thesis; Electron microscopy for materials research (EMAT)
|
Sarmadian N (2015) Identification of thin-film photovoltaic cell materials based on high-throughput first-principles calculations. Antwerpen
Keywords: Doctoral thesis; Electron microscopy for materials research (EMAT)
|
de Backer A (2015) Quantitative atomic resolution electron microscopy using advanced statistical techniques. Antwerpen
Keywords: Doctoral thesis; Electron microscopy for materials research (EMAT)
|
