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“Unveiling the composition of sulphur sensitization specks by their interactions with TAI”. Charlier E, van Doorselaer M, Gijbels R, de Keyzer R, Geuens I, Journal Of Imaging Science And Technology 44, 235 (2000)
Abstract: A two-step process for the formation of sensitivity centers different from earlier described two-step processes was found for sulfur sensitized emulsions. After deposition of sulfur in the first step, it was found that the second step does not consist of rearrangement of sulfur over the surface, but of the supply of silver interstitial ions towards the deposited sulfur clusters. The two processes could be separated by adsorbing and desorbing TAI (4-hydroxy-1, 3,3a, 7-tetraazaindene) at/from the silver halide surface. When 1.5 mmol TAI/mol Ag is added before the sulfur reaction, the silver interstitials are immobilized but sulfur still can be deposited at the same level. By lowering the pH to 2.50 after this sulfur reaction, TAI is desorbed from the surface and the released interstitials then cause a restoration of the properties of a sulfur system without TAI. These effects could be demonstrated via diffuse reflectance spectroscopy (DRS), sensitometry and dielectric loss measurements. We could also confirm the isolation of silver sulfide clusters by TAI from other chemicals in the solution, by adsorption of TAI on the clusters.
Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 0.348
Times cited: 16
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“Multielementmassenspektrometrie (MMS)”. Jochum KP, Gijbels R, Adriaens A Schweizerbart, Stuttgart, page 188 (2000).
Keywords: H3 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Einleitung zu den massenspektrometrischen Methoden”. Gijbels R, Adriaens A Schweizerbart, Stuttgart, page 159 (2000).
Keywords: H3 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Gold particles supported on TiO2”. Giorgio S, Henry CR, Pauwels B, Van Tendeloo G, , 369 (2000)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“TEM of nanostructured materials”. Van Tendeloo G, Pauwels B, Geuens P, Lebedev O, , 3 (2000)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
Times cited: 31
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“Structural properties of Au clusters on MgO”. Pauwels B, Van Tendeloo G, Bouwen W, Kuhn LT, Lievens P, , 383 (2000)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Granular films assembled of CoN, CrM and mixtures of CoN and CrM clusters: structure and electron transport properties”. Kuhn LT, Vanhoutte F, Cannaerts M, Neukermans S, Verschoren G, Bouwen W, van Haesendonck C, Lievens P, Silverans RE, Pauwels B, Van Tendeloo G, (2000)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Electron microscopy of fullerenes and related materials”. Van Tendeloo G, Amelinckx S Wiley-VCH, Weinheim, page 353 (2000).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“On the Ginzburg-Landau analysis of a mixed s-dx2-y2-wave superconducting mesoscopic square”. Misko VR, Fomin VM, Devreese JT, Moshchalkov VV, Solid State Communications 114, 499 (2000). http://doi.org/10.1016/S0038-1098(00)00090-9
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 1.554
Times cited: 2
DOI: 10.1016/S0038-1098(00)00090-9
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“Excitons and charged excitons in quantum wells”. Riva C, Peeters FM, Varga K, Physica status solidi: A: applied research 178, 513 (2000)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Times cited: 12
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“Modeling of radio-frequency and direct current glow discharges in argon”. Bogaerts A, Gijbels R, Journal of technical physics 41, 183 (2000)
Keywords: A3 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Glow discharge mass spectrometry, methods”. Bogaerts A Academic Press, San Diego, Calif., page 669 (2000).
Keywords: H3 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Gradient expansion and beyond for stress tensor and tangential pressure deficit through a planar liquid-vapour interface”. Lamoen D, March NH, Physics And Chemistry Of Liquids 38, 495 (2000). http://doi.org/10.1080/00319100008030296
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 1.145
Times cited: 1
DOI: 10.1080/00319100008030296
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“Determination of the silver sulphide cluster size distribution via computer simulations”. Charlier E, Gijbels R, Van Doorselaer M, De Keyzer R page 85 (2000).
Abstract: Addition of a labile sulphur donor to light sensitive silver halide microcrystals results in the formation of a distribution of silver sulphide clusters on the crystal surface. These silver sulphide clusters enhance the efficiency of image formation during the photographic process. Their activity towards the capturing of light photons, however, is very critical to their size (aggregation number) and concentration. By incorporating gold ions into silver sulphide clusters it was possible to monitor the size distribution by measuring the amount of gold reacted. From these experiments, no evidence was found for aggregation of the reacted sulphur entities on the surface. The uptake of gold ions at different sulphur concentrations could well be fitted with a simulated size distribution when a catalyzed deposition of sulphur was assumed, with a reactivity of the surface equal to 1.0 % for the microcrystals studied. From a simulation of the silver sulphide cluster size distribution a correlation could also be found between increasing aggregation numbers and the absorption at increasing wavelengths in diffuse reflectance spectroscopy.
Keywords: H1 Book chapter; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization”. Romano-Rodriguez A, Perez-Rodriguez A, Serre C, van Landuyt J, et al, Materials science forum
T2 –, International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA 338-3, 309 (2000)
Abstract: In this work we present for the first time, to our knowledge, the CVD epitaxial growth of beta -SiC using an ion beam synthesized (IBS) beta -SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 degreesC. The ion beam synthesized continuous layer is constituted by beta -SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
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“Electron microscopy and X-ray structural investigations of incommensurate spin-ladder Sr4.1Ca4.7Bi0.3Cu17O29 single crystals”. Dluzewski P, Pietraszko A, Kozlowski M, Szczepanska A, Gorecka J, Baran M, Leonyuk L, Babonas GJ, Lebedev OI, Szymczak R, Acta physica Polonica: A: general physics, solid state physics, applied physics 98, 729 (2000)
Abstract: Transmission electron microscopy and X-ray diffraction proved chain/ladder incommensurate single crystal structure of investigated samples. The incommensurate ratio was determined from the X-ray and electron diffraction being equal to 0.704. Diffuse scattering intensities localised on the planes perpendicular to the c*-axis and passing through the spots originating from the periodicity of chain sublattice were detected. High-angle grain boundary or twinning formed by rotation of 33.3 degrees around [100] direction was observed. High-resolution electron microscopy images revealed the stacking faults in ac planes.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.469
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“Comparative study of structural properties and photoluminescence in InGaN layers with a high In content”. Vantomme A, Wu MF, Hogg S, van Landuyt J, et al, Internet journal of nitride semiconductor research
T2 –, Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS 5, art. no.-W11.38 (2000)
Abstract: Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RES) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nn strongly suggesting that the light-emitting regions of the sample me very indium-rich compared to the average measured by RES. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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