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“Multilayer graphene, Moire patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC”. Xu P, Qi D, Schoelz JK, Thompson J, Thibado PM, Wheeler VD, Nyakiti LO, Myers-Ward RL, Eddy CR, Gaskill DK, Neek-Amal M, Peeters FM;, Carbon 80, 75 (2014). http://doi.org/10.1016/j.carbon.2014.08.028
Abstract: Epitaxial graphene is grown on a non-polar n(+) 6H-SiC m-plane substrate and studied using atomic scale scanning tunneling microscopy. Multilayer graphene is found throughout the surface and exhibits rotational disorder. Moire patterns of different spatial periodicities are found, and we found that as the wavelength increases, so does the amplitude of the modulations. This relationship reveals information about the interplay between the energy required to bend graphene and the interaction energy, i.e. van der Waals energy, with the graphene layer below. Our experiments are supported by theoretical calculations which predict that the membrane topographical amplitude scales with the Moire pattern wavelength, L as L-1 + alpha L-2. (C) 2014 Elsevier Ltd. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 6.337
Times cited: 14
DOI: 10.1016/j.carbon.2014.08.028
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