Abstract: We demonstrate that near-edge X-ray-absorption fine-structure spectra combined with full-field transmission X-ray microscopy can be used to study the electronic structure of graphite flakes consisting of a few graphene layers. The flake was produced by exfoliation using sodium cholate and then isolated by means of density-gradient ultracentrifugation. An image sequence around the carbon K-edge, analyzed by using reference spectra for the in-plane and out-of-plane regions of the sample, is used to map and spectrally characterize the flat and folded regions of the flake. Additional spectral features in both π and σ regions are observed, which may be related to the presence of topological defects. Doping by metal impurities that were present in the original exfoliated graphite is indicated by the presence of a pre-edge signal at 284.2 eV.

Abstract: The electron behaviour in an Ar/CF4 inductively coupled plasma is investigated by a Langmuir probe and a hybrid model. The simulated and measured results include electron density, temperature and electron energy distribution function for different values of Ar/CF4 ratio, coil power and gas pressure. The hybrid plasma equipment model simulations show qualitative agreement with experiment. The effect of F2 electron attachment on the electron behaviour is explored by comparing two sets of data based on different F atom boundary conditions. It is demonstrated that electron attachment at F2 molecules is responsible for the depletion of low-energy electrons, causing a density decrease as well as a temperature increase when CF4 is added to an Ar plasma.

Abstract: Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials.

Abstract: For the first time, the local structure and physical properties of Ru1222 based compounds (RuSr(2)Gd(1.4)Ce(0.6)Cu(2)O(10-delta) and RuSr(2)Gd(1.8-x)Y(0.2)CexCu(2)O(10) (x = 0.90-0.55)) have been investigated and analyzed together on the very same compounds. The Ru1222 superstructure was confirmed by TEM at a local scale and was suggested to have an orthorhombic symmetry with space group Aba2 and lattice parameters a(s) similar or equal to root 2a, b(s) similar or equal to root 2a and c(s) = c. This new Ru1222 superstructure distortion from tetragonal symmetry is proposed to have a positive correlation with the superconductivity variation of these compounds. The more the distortion towards orthorhombic symmetry, the higher the critical superconducting temperature these compounds can achieve. The T(c)(0) of RuSr(2)Gd(1.8-x)Y(0.2)Ce(x)Cu(2)O(10-delta) (x = 0.85-0.55) increases monotonically from 4 to 16 K when x decreases from 0.85 to 0.70, then RuSr(2)Gd(2)Cu(2)O(8) defects emerge and the T(c) decreases with decreasing x. Ru1212 defects are observed to intergrow epitaxially with the Ru1222 structure as lamellas along the c-axis in RuSr(2)Gd(1.4)Ce(0.6)Cu(2)O(10-delta). Although Ru1212 is a superconductor, the intergrowth severely restrains its superconductivity.

Abstract: In this study, a new fouling sensor was validated under different conditions of hydraulic (HRT) and sludge retention time (SRT). The MBR-VFM (membrane bioreactor-VITO Fouling Measurement) allows the simultaneous determination of the physically reversible and irreversible fouling potential of a mixed liquor during a single crossflow filtration test. In accordance with the on-line filtration behavior, the measured reversible and irreversible fouling propensities differed significantly between MBRs operated at different combinations of HRT-SRT. Moreover, a significant negative correlation was found between the on-line permeability and the reversible and irreversible fouling propensity measured by the MBR-VFM. This corresponded to observations made on membrane recovery after physical or chemical cleaning actions. Higher reversible and irreversible fouling were observed at lower HRT, presumably as a consequence of increased concentrations of foulants present. The effect of SRT was much smaller and restricted to the reversible fouling component. Possible explanations for the increased fouling at prolonged SRT are the higher sludge and colloid concentration and the smaller floc size. It can be concluded that the MBR-VFM is a useful tool to monitor fluctuations in a mixed liquors (ir)reversible fouling potential and can contribute to a deeper understanding of the occurring fouling phenomena.

Abstract: Galvanised iron is popular in many applications, particular as a roofing material. However, just like other materials, especially metallic ones, it is prone to degradation by corrosion. In this particular study, the degradation of galvanised roof sheets was investigated at a coastal, urban and rural site in Tanzania, Africa. Samples were exposed to various outdoor environments over a period of 3 years. In addition, some accelerated laboratory investigations were conducted in different simulated air pollution environments in an artificial corrosion chamber constructed for this purpose to supplement the outdoor exposure tests. It was found that the combination of the tropical climate and increasing air pollution due to industrial development in the capital Dar-es-Salaam resulted in substantial atmospheric corrosion of the roof sheets, which eventually leads to failure and the necessity for replacement. The rural site had the lowest degree of atmospheric corrosion as expected. A combination of different corrosion products was identified as a result of the atmospheric corrosion by Raman and EDX analyses. The information gained from this investigation could be utilised to construct more durable structures requiring less frequent replacement and maintenance in future.

Abstract: In this paper, simulations are performed to gain a better insight into the properties of a Cl2/Ar plasma, with and without O2, during plasma etching of Si. Both plasma and surface properties are calculated in a self-consistent manner. Special attention is paid to the behavior of etch products coming from the wafer or the walls, and how the chamber walls can affect the plasma and the resulting etch process. Two modeling cases are considered. In the first case, the reactor walls are defined as clean (Al2O3), whereas in the second case a SiO2 coating is introduced on the reactor walls before the etching process, so that oxygen will be sputtered from the walls and introduced into the plasma. For this reason, a detailed reaction set is presented for a Cl2/O2/Ar plasma containing etched species, as well as an extensive reaction set for surface processes, including physical and chemical sputtering, chemical etching and deposition processes. Density and flux profiles of various species are presented for a better understanding of the bulk plasma during the etching process. Detailed information is also given on the composition of the surfaces at various locations of the reactor, on the etch products in the plasma and on the surface loss probabilities of the plasma species at the walls, with different compositions. It is found that in the clean chamber, walls are mostly chlorinated (Al2Cl3), with a thin layer of etch products residing on the wall. In the coated chamber, an oxy-chloride layer is grown on the walls for a few nanometers during the etching process. The Cl atom wall loss probability is found to decrease significantly in the coated chamber, hence increasing the etch rate. SiCl2, SiCl4 and SiCl3 are found to be the main etch products in the plasma, with the fraction of SiCl2 being always slightly higher. The simulation results compare well with experimental data available from the literature.

Abstract: A combined Monte Carlo (MC)/analytical surface model is developed to study the plasma processes occurring during the reactive sputter deposition of TiOx thin films. This model describes the important plasma species with a MC approach (i.e. electrons, Ar+ ions, {\rm O}_2

Abstract: The possibility of manipulating vortex matter by using various artificial pinning arrays is of significant importance for possible applications in nano and micro fluxonics devices. By numerically solving the time-dependent GinzburgLandau equations, we study the vortexantivortex (vav) dynamics in a hybrid structure consisting of a finite-size superconductor with magnetic dipoles on top which generate vav pairs in the presence of an external current. The vav dynamics is analyzed for different arrangements and magnetic moments of the dipoles, as a function of angle α between the direction of the magnetic dipole and that of the Lorentz force produced by the applied current. The interplay of the attractive interaction between a vav pair and the Lorentz force leads either to the separation of (anti)vortices and their motion in opposite directions or to their annihilation. We found a critical angle αc, below which vortices and antivortices are repelled, while for larger angles they annihilate. In case of a single (few) magnetic dipole(s), this magnetic dipole induced vav guidance is influenced by the self-interaction of the vav pairs with their images in a finite-size sample, while for a periodic array of dipoles the guidance is determined by the interaction of a vav pair with other dipoles and vav pairs created by them. This effect is tunable through the external current and the magnetization and size of the magnetic dipoles.

Abstract: Solution derived La2Zr2O7 films have drawn much attention for potential applications as thermal barriers or low-cost buffer layers for coated conductor technology. Annealing and coating parameters strongly affect the microstructure of La2Zr2O7, but different film processing methods can yield similar microstructural features such as nanovoids and nanometer-sized La2Zr2O7 grains. Nanoporosity is a typical feature found in such films and the implications for the functionality of the films are investigated by a combination of scanning transmission electron microscopy (STEM), electron energy-loss spectroscopy (EELS) and quantitative electron tomography. Chemical solution based La2Zr2O7 films deposited on flexible Ni5 at.%W substrates with a {100}lang001rang biaxial texture were prepared for an in-depth characterization. A sponge-like structure composed of nanometer-sized voids is revealed by high-angle annular dark-field scanning transmission electron microscopy in combination with electron tomography. A three-dimensional quantification of nanovoids in the La2Zr2O7 film is obtained on a local scale. Mostly non-interconnected highly faceted nanovoids compromise more than one-fifth of the investigated sample volume. The diffusion barrier efficiency of a 170 nm thick La2Zr2O7 film is investigated by STEM-EELS, yielding a 1.8 ± 0.2 nm oxide layer beyond which no significant nickel diffusion can be detected and intermixing is observed. This is of particular significance for the functionality of YBa2Cu3O7 − δ coated conductor architectures based on solution derived La2Zr2O7 films as diffusion barriers.

Abstract: Metamorphic buffers (M-buffers) consisting of graded InAlAs or bulk InP were employed for the production of InP-based epiwafers on GaAs substrates by molecular-beam epitaxy. The graded InAlAs is the standard for production metamorphic high electron mobility transistors (M-HEMTs), while the bulk InP offers superior thermal properties for higher current density circuits. The surface morphology and crystal structure of the two M-buffers showed different relaxation mechanisms. The graded InAlAs gave a cross-hatched pattern with nearly full relaxation and very effective dislocation filtering, while the bulk InP had a uniform isotropic surface with dislocations propagating further up towards the active layers. Both types of M-buffers had atomic force microscopy root-mean-square roughness values around 2030 Å. The Hall transport properties of high electron mobility transistors (HEMTs) grown on the InAlAs M-buffer, and a baseline HEMT grown lattice matched on InP, both had room-temperature mobilities >10 000 cm2/V s, while the M-HEMT on the InP M-buffer showed a decrease to 9000 cm2/V  s. Similarly, the dc parameters of a double heterojunction bipolar transistor (DHBT) grown on the InAlAs M-buffer were much closer to the baseline heterojunction bipolar transistor than a DHBT grown on the InP M-buffer. A high breakdown voltage of 11.3 V was achieved on an M-DHBT with the InAlAs M-buffer. We speculate that the degradation in device characteristics on the InP M-buffer was related to the incomplete dislocation filtering.

Abstract: Five different pre-treatments were investigated to enhance the solubilisation and anaerobic biodegradability of kitchen waste (
KW) in thermophilic batch and continuous tests. In the batch solubilisation tests, the highest and the lowest solubilisation efficiency were achieved with the thermo-acid and the pressuredepressure pre-treatments, respectively. However, in the batch biodegradability tests, the highest cumulative biogas production was obtained with the pressuredepressure method. In the continuous tests, the best performance in terms of an acceptable biogas production efficiency of 60% and stable in-reactor CODs and VFA concentrations corresponded to the pressuredepressure reactor, followed by freezethaw, acid, thermo-acid, thermo and control. The maximum OLR (5 g COD L−1 d−1) applied in the pressuredepressure and freezethaw reactors almost doubled the control reactor. From the overall analysis, the freezethaw pre-treatment was the most profitable process with a net potential profit of around 11.5 ton−1 KW.

Abstract: For many years, photocatalysis has been proposed as one of the promising techniques to abate environmental pollutants. To improve these reactions it is vital to know the reaction mechanisms of the photocatalytic degradation. This new reactor will make it possible to study the catalytic surface at the moment the reactions occur. By the means of UV LED illumination there is no need of an external UV lamp and thus lowers the cost. The validation of this newly developed reactor is done by investigating the photocatalytic reaction mechanism of nitric oxide (NO) and comparing these findings with those already discussed in literature. From these results, it became clear that the newly developed FTIR in situ reactor allows real time study of photocatalytic degradations.