Abstract: Bilayer (BL) transition metal dichalcogenides (TMDs) are important materials in valleytronics and twistronics. Here we study terahertz (THz) magneto-optical (MO) properties of n-type 2H-stacking BL molybdenum sulfide (MoS2) on sapphire substrate grown by chemical vapor deposition. The AFM, Raman spectroscopy and photoluminescence are used for characterization of the samples. Applying THz time-domain spectroscopy (TDS), in combination with polarization test and the presence of magnetic field in Faraday geometry, THz MO transmissions through the sample are measured from 0 to 8 T at 80 K. The complex right- and left-handed circular MO conductivities for 2H-stacking BL MoS2 are obtained. Through fitting the experimental results with theoretical formula of MO conductivities for an electron gas, generalized by us previously through the inclusion of photon-induced electronic backscattering effect, we are able to determine magneto-optically the key electronic parameters of BL MoS2, such as the electron density n(e), the electronic relaxation time tau, the electronic localization factor c and, particularly, the effective electron mass m* around Q-point in between the K- and Gamma-point in the electronic band structure. The dependence of these parameters upon magnetic field is examined and analyzed. This is a pioneering experimental work to measure m* around the Q-point in 2H-stacking BL MoS2 and the experimental value is very close to that obtained theoretically. We find that n(e)/tau/ divided by c divided by /m* in 2H-stacking BL MoS2 decreases/increases/decreases/increases with increasing magnetic field. The results obtained from this study can be benefit to us in gaining an in-depth understanding of the electronic and optoelectronic properties of BL TMD systems.