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Author Title Year Publication Volume Times cited Additional Links (down)
Zhao, S.-X.; Gao, F.; Wang, Y.-N.; Bogaerts, A. The effect of F2 attachment by low-energy electrons on the electron behaviour in an Ar/CF4 inductively coupled plasma 2012 Plasma sources science and technology 21 23 UA library record; WoS full record; WoS citing articles
Zhao, S.-X.; Gao, F.; Wang, Y.-N.; Bogaerts, A. Gas ratio effects on the Si etch rate and profile uniformity in an inductively coupled Ar/CF4 plasma 2013 Plasma sources science and technology 22 11 UA library record; WoS full record; WoS citing articles