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“Dynamics of a quadrupolar glass”. Bostoen C, Michel KH, Physical review : B : condensed matter and materials physics 43, 4415 (1991)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 33
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“Tuning of energy levels in a superlattice”. Peeters FM, Materials Research Society symposium proceedings 325, 471 (1994)
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
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“Letter Chemical transformation of Au-tipped CdS nanorods into AuS/Cd core/shell particles by electron beam irradiation”. van Huis MA, Figuerola A, Fang C, Béché, A, Zandbergen HW, Manna L, Nano letters 11, 4555 (2011). http://doi.org/10.1021/nl2030823
Abstract: We demonstrate that electron irradiation of colloidal CdS nanorods carrying Au domains causes their evolution into AuS/Cd core/shell nanoparticles as a result of a concurrent chemical and morphological transformation. The shrinkage of the CdS nanorods and the growth of the Cd shell around the Au tips are imaged in real time, while the displacement of S atoms from the CdS nanorod to the Au domains is evidenced by high-sensitivity energy-dispersive X-ray (EDX) spectroscopy. The various nanodomains display different susceptibility to the irradiation, which results in nanoconfigurations that are very different from those obtained after thermal annealing. Such physical manipulations of colloidal nanocrystals can be exploited as a tool to access novel nanocrystal heterostructures.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 12.712
Times cited: 25
DOI: 10.1021/nl2030823
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“Ordering and phase transitions of charged particles in a classical finite two-dimensional system”. Bedanov VM, Peeters FM, Physical review : B : condensed matter and materials physics 49, 2667 (1994)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 412
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“Electrons in non-homogeneous magnetic fields”. Peeters FM, Matulis A, Brazilian journal of physics 24, 283 (1994)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 0.81
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“Molecular structure, crystal field and orientational order in solid C60”. Lamoen D, Michel KH s.l., page 183 (1994).
Keywords: H1 Book chapter; Condensed Matter Theory (CMT)
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Wang B (2011) TEM study of plasticity mechanisms in metals : nanocrystalline Al Pd thin films and bulk bcc Nb. Antwerpen
Keywords: Doctoral thesis; Electron microscopy for materials research (EMAT)
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Wang W-C (2011) Quantitative analysis of electron exit waves with single atom sensitivity. Antwerpen
Keywords: Doctoral thesis; Electron microscopy for materials research (EMAT)
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“Transport in nanostructures”. Magnus W, Carrillo-Nunez H, Sorée B Pan Stanford, S.l. (2011).
Keywords: H3 Book chapter; Condensed Matter Theory (CMT)
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“The junctionless nanowire transistor”. Sorée B, Pham A-T, Sels D, Magnus W Pan Stanford, S.l., page ? (2011).
Keywords: H3 Book chapter; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT)
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“Polaron effects in heterostructures, quantum wells and superlattices”. Peeters FM, Devreese JT, , 99 (1994)
Keywords: P1 Proceeding; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Times cited: 1
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“Effects of confinement in strongly-coupled superlattices on impurity bound magneto-polarons”. Shi JM, Peeters FM, Devreese JT, Cheng J-P, Kono J, McCombe BD, Proceedings of the International Conference on the Physics of Semiconductors 22, 2267 (1994)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
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“Destruction of magnetophonon resonance in high mobility heterojunctions from competition between elastic and inelastic scattering”. Xu W, Leadley DR, Peeters FM, Devreese JT, Nicholas RJ, Harris JJ, Foxon CT, Proceedings of the International Conference on the Physics of Semiconductors 22, 839 (1994)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
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“Electron mobility in Si delta-doped GaAs”. Hai GQ, Studart N, Peeters FM, Devreese JT, Koenraad PM, van de Stadt AFW, Wolter JH, Proceedings of the International Conference on the Physics of Semiconductors 22, 823 (1994)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
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“Nonlinear Schrödinger equation on a ring”. Smondyrev MA, Vansant P, Peeters FM, Devreese JT, JINR communications (1994)
Keywords: A3 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
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“Exact equations for large bipolarons in the strong-coupling limit”. Smondyrev MA, Peeters FM, Vansant P, Devreese JT, Journal of physics: A: mathematical and general 27, 7925 (1994)
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Times cited: 17
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Tinck S (2011) Numerical simulations of inductively coupled plasmas for applications in the microelectronics industry. Antwerpen
Keywords: Doctoral thesis; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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Xu B (2011) Magnetic, calorimetric and electronic properties of vortex states in (3D) mesoscopic superconductors. Antwerpen
Keywords: Doctoral thesis; Condensed Matter Theory (CMT)
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“2-D rotational invariant multi sub band Schrödinger-Poisson solver to model nanowire transistors”. Sels D, Sorée B, Groeseneken G, 14th International Workshop on Computational Electronics, 85 (2010)
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
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“Donor transition energy in GaAs-superlattices in a magnetic field along the growth axis”. Shi JM, Peeters FM, Hai GQ, Devreese JT, Physical review : B : condensed matter and materials physics 44, 5692 (1991)
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 78
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“Diffusion-to-streaming transition in a two-dimensional electron system in a polar semiconductor”. Xu W, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 43, 14134 (1991)
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 24
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“Three-dimensional atomic imaging of colloidal core-shell nanocrystals”. Bals S, Casavola M, van Huis MA, Van Aert S, Batenburg KJ, Van Tendeloo G, Vanmaekelbergh D, Nano letters 11, 3420 (2011). http://doi.org/10.1021/nl201826e
Abstract: Colloidal coreshell semiconductor nanocrystals form an important class of optoelectronic materials, in which the exciton wave functions can be tailored by the atomic configuration of the core, the interfacial layers, and the shell. Here, we provide a trustful 3D characterization at the atomic scale of a free-standing PbSe(core)CdSe(shell) nanocrystal by combining electron microscopy and discrete tomography. Our results yield unique insights for understanding the process of cation exchange, which is widely employed in the synthesis of coreshell nanocrystals. The study that we present is generally applicable to the broad range of colloidal heteronanocrystals that currently emerge as a new class of materials with technological importance.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 12.712
Times cited: 121
DOI: 10.1021/nl201826e
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“Large bipolarons in three and two dimensions”. Verbist G, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 43, 2712 (1991)
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 155
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Cao S (2010) Quantitative 3D analysis of Ni4Ti3 precipitate morphology and distribution in Ni-Ti by FIB/SEM slice-and-view. Antwerpen
Keywords: Doctoral thesis; Electron microscopy for materials research (EMAT)
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Eckert M (2010) Combined molecular dynamics and Monte Carlo simulations for the deposition of (ultra)nanocrystalline diamond. Antwerpen
Keywords: Doctoral thesis; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Novel device concepts for nanotechnology : the nanowire pinch-off FET and graphene tunnelFET”. Sorée B, Magnus W, Szepieniec M, Vandenbreghe W, Verhulst A, Pourtois G, Groeseneken G, de Gendt S, Heyns M, ECS transactions 28, 15 (2010)
Abstract: We explain the basic operation of a nanowire pinch-off FET and graphene nanoribbon tunnelFET. For the nanowire pinch-off FET we construct an analytical model to obtain the threshold voltage as a function of radius and doping density. We use the gradual channel approximation to calculate the current-voltage characteristics of this device and we show that the nanowire pinch-off FET has a subthreshold slope of 60 mV/dec and good ION and ION/IOFF ratios. For the graphene nanoribbon tunnelFET we show that an improved analytical model yields more realistic results for the transmission probability and hence the tunneling current. The first simulation results for the graphene nanoribbon tunnelFET show promising subthreshold slopes.
Keywords: A2 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures : charge quantization and nonparabolic corrections”. O'Regan TP, Hurley PK, Sorée B, Fischetti MV, Applied Physics Letters 96, 213514 (2010). http://doi.org/10.1063/1.3436645
Abstract: The capacitance-voltage (C-V) characteristic is calculated for p-type In<sub>0.53</sub>Ga<sub>0.47</sub>As metal-oxide-semiconductor (MOS) structures based on a self-consistent PoissonSchrödinger solution. For strong inversion, charge quantization leads to occupation of the satellite valleys which appears as a sharp increase in the capacitance toward the oxide capacitance. The results indicate that the charge quantization, even in the absence of interface defects (D<sub>it</sub>), is a contributing factor to the experimental observation of an almost symmetric C-V response for In<sub>0.53</sub>Ga<sub>0.47</sub>As MOS structures. In addition, nonparabolic corrections are shown to enhance the depopulation of the Γ valley, shifting the capacitance increase to lower inversion charge densities.
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 3.411
Times cited: 26
DOI: 10.1063/1.3436645
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“Tuning the Fermi level of SiO2-supported single-layer graphene by thermal annealing”. Nourbakhsh A, Cantoro M, Klekachev A, Clemente F, Sorée B, van der Veen MH, Vosch T, Stesmans A, Sels B, de Gendt S, Journal Of Physical Chemistry C 114, 6894 (2010). http://doi.org/10.1021/jp910085n
Abstract: The effects of thermal annealing in inert Ar gas atmosphere of SiO2-supported, exfoliated single-layer graphene are investigated in this work. A systematic, reproducible change in the electronic properties of graphene is observed after annealing. The most prominent Raman features in graphene, the G and 2D peaks, change in accord to what is expected in the case of hole doping. The results of electrical characterization performed on annealed, back-gated field-effect graphene devices show that the neutrality point voltage VNP increases monotonically with the annealing temperature, confirming the occurrence of excess hole accumulation. No degradation of the structural properties of graphene is observed after annealing at temperatures as high as 400 °C. Thermal annealing of single-layer graphene in controlled Ar atmosphere can therefore be considered a technique to reproducibly modify the electronic structure of graphene by tuning its Fermi level.
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 4.536
Times cited: 54
DOI: 10.1021/jp910085n
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“Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor”. Verhulst A, Sorée B, Leonelli D, Vandenberghe WG, Groeseneken G, Journal Of Applied Physics 107, 024518 (2010). http://doi.org/10.1063/1.3277044
Abstract: Tunnel field-effect transistors (TFETs) are potential successors of metal-oxide-semiconductor FETs because scaling the supply voltage below 1 V is possible due to the absence of a subthreshold-swing limit of 60 mV/decade. The modeling of the TFET performance, however, is still preliminary. We have developed models allowing a direct comparison between the single-gate, double-gate, and gate-all-around configuration at high drain voltage, when the drain-voltage dependence is negligible, and we provide improved insight in the TFET physics. The dependence of the tunnel current on device parameters is analyzed, in particular, the scaling with gate-dielectric thickness, channel thickness, and dielectric constants of gate dielectric and channel material. We show that scaling the gate-dielectric thickness improves the TFET performance more than scaling the channel thickness and that improvements are often overestimated. There is qualitative agreement between our model and our experimental data.
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 2.068
Times cited: 150
DOI: 10.1063/1.3277044
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“The use of surface analysis techniques and isotope mass spectrometry for the study of water-rock interactions of interest in hot-dry rock technology”. Adriaens A, van Nevel L, Van 't dack L, de Bièvre P, Adams F, Gijbels R, , 2541 (1995)
Keywords: P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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