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Author Abakumov, A.M.; Shpanchenko, R.V.; Antipov, E.V.; Lebedev, O.I.; Van Tendeloo, G.
Title The crystal structure of Ca3ReO6 Type A1 Journal article
Year 1997 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem
Volume 131 Issue Pages 305-309
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos A1997XQ33000014 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-4596 ISBN Additional Links (down) UA library record; WoS full record; WoS citing articles
Impact Factor 2.299 Times cited 10 Open Access
Notes Approved Most recent IF: 2.299; 1997 IF: 1.486
Call Number UA @ lucian @ c:irua:21442 Serial 571
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Author Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J.
Title In-situ HREM irradiation study of point defect clustering in strained GexSi1-x/(001)Si heterostructure Type A1 Journal article
Year 1997 Publication Conference series of the Institute of Physics Abbreviated Journal
Volume 157 Issue Pages 55-58
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000071954600008 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0305-2346 ISBN Additional Links (down) UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 1 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:21432 Serial 1578
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Author Verbist, K.; Lebedev, O.I.; Van Tendeloo, G.; Verhoeven, M.A.J.; Rijnders, A.J.H.M.; Blank, D.H.A.; Rogalia, H.
Title Ga segregation in DyBa2Cu3O7-\delta/PrBa2Cu3-xGaxO7-\delta/DyBa2Cu3O7-\delta ramp-type Josephson junctions Type A1 Journal article
Year 1997 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 70 Issue 9 Pages 1167-1169
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos A1997WL14700036 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; 1077-3118 ISBN Additional Links (down) UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 8 Open Access
Notes Approved Most recent IF: 3.411; 1997 IF: 3.033
Call Number UA @ lucian @ c:irua:21426 Serial 1312
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Author Van Tendeloo, G.; Lebedev, O.I.; Shpanchenko, R.V.; Antipov, E.V.
Title Structure determination of YBCO fluorinated phases by HREM Type A1 Journal article
Year 1997 Publication Journal of electron microscopy Abbreviated Journal Microscopy-Jpn
Volume 1 Issue Pages 23-31
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Tokyo Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0744; 1477-9986 ISBN Additional Links (down) UA library record
Impact Factor 0.9 Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:21418 Serial 3301
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Author Dluzewski, P.; Pietraszko, A.; Kozlowski, M.; Szczepanska, A.; Gorecka, J.; Baran, M.; Leonyuk, L.; Babonas, G.J.; Lebedev, O.I.; Szymczak, R.
Title Electron microscopy and X-ray structural investigations of incommensurate spin-ladder Sr4.1Ca4.7Bi0.3Cu17O29 single crystals Type A1 Journal article
Year 2000 Publication Acta physica Polonica: A: general physics, solid state physics, applied physics Abbreviated Journal Acta Phys Pol A
Volume 98 Issue 6 Pages 729-737
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Transmission electron microscopy and X-ray diffraction proved chain/ladder incommensurate single crystal structure of investigated samples. The incommensurate ratio was determined from the X-ray and electron diffraction being equal to 0.704. Diffuse scattering intensities localised on the planes perpendicular to the c*-axis and passing through the spots originating from the periodicity of chain sublattice were detected. High-angle grain boundary or twinning formed by rotation of 33.3 degrees around [100] direction was observed. High-resolution electron microscopy images revealed the stacking faults in ac planes.
Address
Corporate Author Thesis
Publisher Place of Publication Warszawa Editor
Language Wos 000166377600007 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0587-4246 ISBN Additional Links (down) UA library record; WoS full record;
Impact Factor 0.469 Times cited Open Access
Notes Approved Most recent IF: 0.469; 2000 IF: 0.409
Call Number UA @ lucian @ c:irua:104226 Serial 951
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Author Mahieu, S.; Ghekiere, P.; de Winter, G.; de Gryse, R.; Depla, D.; Lebedev, O.I.
Title Biaxially aligned yttria stabilized zirconia and titanium nitride layers deposited by unbalanced magnetron sputtering Type A1 Journal article
Year 2005 Publication Diffusion and defect data : solid state data : part B : solid state phenomena T2 – 2nd International Conference on Texture and Anisotropy of Polycrystals, JUL 07-09, 2004, Metz, FRANCE Abbreviated Journal
Volume 105 Issue Pages 447-452
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Control of the texture and the biaxial alignment of sputter deposited films has provoked a great deal of interest due to its technological importance. indeed, many physical properties of thin films are influenced by the biaxial alignment. In this context, extensive research has been established to understand the growth mechanism of biaxially aligned Yttria Stabilized Zirconia (YSZ) as a buffer layer for high temperature superconducting copper oxides. In this work, the growth mechanism in general and the mechanism responsible of the biaxial alignment in detail were investigated for thin films of YSZ and TiN deposited by unbalanced magnetron sputtering using non-aligned polycrystalline stainless steel substrates. The mechanism responsible for the preferential out-of-plane alignment has been investigated by performing depositions on a non-tilted substrate. However, to study the in-plane alignment a tilted substrate was used. The microstructure of the deposited layers was characterised by Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). The crystallographic alignment has been investigated by X-ray diffraction (XRD) (angular scans and pole figures) and by Selective Area Diffraction (SAD). It was observed that the deposited layers show a zone T or zone II structure and the layers with a zone T structure consist of faceted grains. There seems to be a correlation between the crystal habit of these faceted grains and the measured biaxial alignment. A model for the preferential out-of-plane orientation, the in-plane alignment and the correlation between the microstructure and the biaxial alignment is proposed.
Address
Corporate Author Thesis
Publisher Place of Publication Vaduz Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 3-908451-09-4 ISBN Additional Links (down) UA library record; WoS full record; WoS citing articles
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:103190 Serial 230
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Author Verbist, K.; Lebedev, O.I.; Van Tendeloo, G.; Verhoeven, M.A.J.; Rijnders, A.J.H.M.; Blank, D.H.A.
Title Study of ramp-type Josephson junctions by HREM Type A1 Journal article
Year 1997 Publication Electronic Applications; Vol 2: Large Scale And Power Applications Abbreviated Journal
Volume Issue 158 Pages 49-52
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Structural aspects of ramp-type Josephson junctions based on REBa2Cu3O7-delta high-T-c superconductors, are investigated by cross-section transmission electron microscopy and results related to fabrication process or physical properties. The barrier layer material is PrBa2Cu3-xGaxO7-delta. The ramp-geometry depends on the etching conditions. High levels of Ga doping (x>0.7) influence the microstructure of the barrier layer thereby changing the junctions properties.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000071955200012 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0-7503-0487-1 ISBN Additional Links (down) UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:102941 Serial 3333
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