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“High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers”. Germain M, Leys M, Boeykens S, Degroote S, Wang W, Schreurs D, Ruythooren W, Choi K-H, van Daele B, Van Tendeloo G, Borghs G, Materials Research Society symposium proceedings 798, Y10.22 (2004)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN”. van Daele B, Van Tendeloo G, Ruythooren W, Derluyn J, Leys MR, Germain M, Springer proceedings in physics 107, 389 (2005)
Abstract: Transmission electron microscopy has been applied to study Ti and Al/Ti contacts on GaN and AlGaN/GaN as a function of annealing temperature. This has lead to a profound understanding of the role of Al, both in the contact formation on n-GaN and on AlGaN/GaN. Al in the AlGaN decreases the N-extraction by Ti out of the nitride, because of the strong Al-N bond. Al in the metal bilayer also reduces the N-extraction by Ti due to a preferential alloy mixing.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“The role of Al on Ohmic contact formation on n-type GaN and AlGaN/GaN”. van Daele B, Van Tendeloo G, Ruythooren W, Derluyn J, Leys M, Germain M, Applied physics letters 87, 061905 (2005). http://doi.org/10.1063/1.2008361
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 57
DOI: 10.1063/1.2008361
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