|
|
“High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers”. Germain M, Leys M, Boeykens S, Degroote S, Wang W, Schreurs D, Ruythooren W, Choi K-H, van Daele B, Van Tendeloo G, Borghs G, Materials Research Society symposium proceedings 798, Y10.22 (2004)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
|
|
|
|
“Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers”. Cheng K, Leys M, Degroote S, van Daele B, Boeykens S, Derluyn J, Germain M, Van Tendeloo G, Engelen J, Borghs G, Journal of electronic materials 35, 592 (2006). http://doi.org/10.1007/s11664-006-0105-1
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.579
Times cited: 102
DOI: 10.1007/s11664-006-0105-1
|
|
|
|
“Single crystalline GaN grown on porous Si(111) by MOVPE”. Cheng K, Degroote S, Leys M, van Daele B, Germain M, Van Tendeloo G, Borghs G, Physica status solidi: C: conferences and critical reviews 4, 1908 (2007). http://doi.org/10.1002/pssc.200674316
Abstract: In this work, GaN growth on porous Si(111) will be reported. The porosity of the substrates was 30% or 50%. In the latter case, various thicknesses, from 0.6 mu m to 10 mu m, were investigated. The morphology of the GaN surfaces was analyzed by optical interference microscopy. The crystalline quality of the epitaxial layers was characterized by High Resolution X-Ray Diffraction (HR-XRD) and cross-sectional Transmission Electron Microscopy (TEM). A Full Width at Half Maximum (FWHM) of the X-ray symmetric rocking curve (0002) 2 theta – omega scan of 290 arc see was obtained for a 1 mu m thick GaN layer, which is comparable with that of GaN grown on bulk Si(111) substrates. (c) 2007 WILEY-VCH Verlag GmbH Co. KGaA, Weinheim.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
Times cited: 2
DOI: 10.1002/pssc.200674316
|
|
