“Epitaxial strain induced metal insulator transition in La0.9Sr0.1MnO3 and La0.88Sr0.1MnO3 thin films”. Razavi FS, Gross G, Habermeier H-U, Lebedev O, Amelinckx S, Van Tendeloo G, Vigliante A, Applied physics letters 76, 155 (2000). http://doi.org/10.1063/1.125687
Abstract: We are reporting an unexpected metal insulator transition at the ferromagnetic phase-transition temperature for thin films of La0.9Sr0.1MnO3 (< 50 nm), grown on a (100) face of SrTiO3 substrate. For the thicker films (> 50 nm), similar to the single crystal, no such transition is observed below T-C. Additionally, we observe the suppression of the features associated with charge or orbital ordering in intentionally La-deficient thin films of La0.88Sr0.1MnO3 (< 75 nm). In thin films, transmission electron microscopy reveals a compressive strain due to the epitaxial growth, that is, lattice parameters adopt those of the cubic lattice of SrTiO3. As the film thickness increases, coherent microtwinning is observed in the films and the films relax to a orthorhombic structure. (C) 2000 American Institute of Physics. [S0003-6951(00)00402-2].
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 91
DOI: 10.1063/1.125687
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“Snake states and Klein tunneling in a graphene Hall bar with a pn-junction”. Barbier M, Papp G, Peeters FM, Applied physics letters 100, 163121 (2012). http://doi.org/10.1063/1.4704667
Abstract: The Hall (R-H) and bend (R-B) resistances of a graphene Hall bar structure containing a pn-junction are calculated when in the ballistic regime. The simulations are done using the billiard model. Introducing a pn-junction-dividing the Hall bar geometry in two regions-leads to two distinct regimes exhibiting very different physics: (1) both regions are of n-type and (2) one region is n-type and the other p-type. In regime (1), a “Hall plateau”-an enhancement of the resistance-appears for R-H. On the other hand, in regime (2), we found a negative R-H, which approaches zero for large B. The bend resistance is highly asymmetric in regime (2) and the resistance increases with increasing magnetic field B in one direction while it reduces to zero in the other direction. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704667]
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 20
DOI: 10.1063/1.4704667
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“Partially unzipped carbon nanotubes as magnetic field sensors”. Costamagna S, Schulz A, Covaci L, Peeters F, Applied physics letters 100, 232104 (2012). http://doi.org/10.1063/1.4726039
Abstract: The conductance through graphene nanoribbons (GNR) connected to a partially unzipped carbon nanotube (CNT) is studied in the presence of an external magnetic field applied parallel to the long axis of the tube by means of non-equilibrium Green's function technique. We consider CNTs that are partially unzipped to form armchair-GNR/zigzag-CNT/armchair-GNR or zigzag-GNR/armchair-CNT/zigzag-GNR junctions. We find that the inclusion of a longitudinal magnetic field affects the electronic states only in the CNT region, leading to the suppression of the conductance at low energies. We demonstrate that both types of junctions can be used as magnetic field sensors. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726039]
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 10
DOI: 10.1063/1.4726039
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“A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors”. Vandenberghe WG, Verhulst AS, Kao K-H, De Meyer K, Sorée B, Magnus W, Groeseneken G, Applied physics letters 100, 193509 (2012). http://doi.org/10.1063/1.4714544
Abstract: We develop a model for the tunnel field-effect transistor (TFET) based on the Wentzel-Kramer-Brillouin approximation which improves over existing semi-classical models employing generation rates. We hereby introduce the concept of a characteristic tunneling length in direct semiconductors. Based on the model, we show that a limited density of states results in an optimal doping concentration as well as an optimal material's band gap to obtain the highest TFET on-current at a given supply voltage. The observed optimal-doping trend is confirmed by 2-dimensional quantum-mechanical simulations for silicon and germanium. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4714544]
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 25
DOI: 10.1063/1.4714544
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“Controlling flux flow dissipation by changing flux pinning in superconducting films”. Grimaldi G, Leo A, Nigro A, Silhanek AV, Verellen N, Moshchalkov VV, Milošević, MV, Casaburi A, Cristiano R, Pace S, Applied physics letters 100, 202601 (2012). http://doi.org/10.1063/1.4718309
Abstract: We study the flux flow state in superconducting materials characterized by rather strong intrinsic pinning, such as Nb, NbN, and nanostructured Al thin films, in which we drag the superconducting dissipative state into the normal state by current biasing. We modify the vortex pinning strength either by ion irradiation, by tuning the measuring temperature or by including artificial pinning centers. We measure critical flux flow voltages for all materials and the same effect is observed: switching to low flux flow dissipations at low fields for an intermediate pinning regime. This mechanism offers a way to additionally promote the stability of the superconducting state. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4718309]
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 33
DOI: 10.1063/1.4718309
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“Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device”. Chen YY, Pourtois G, Adelmann C, Goux L, Govoreanu B, Degreave R, Jurczak M, Kittl JA, Groeseneken G, Wouters DJ, Applied physics letters 100, 113513 (2012). http://doi.org/10.1063/1.3695078
Abstract: In this letter, CMOS-compatible Ni/HfO2/TiN resistive random access memory stacks demonstrated attractive unipolar switching properties, showing >10(3) endurance and long retention at 150 degrees C. The Ni bottom electrode (BE) improved the switching yield over the NiSiPt BE. To better understand the unipolar forming mechanism, ab initio simulation and time of flight-secondary ion mass spectroscopy were utilized. Compared to the NiSiPt BE, Ni BE gives larger Ni diffusion in the HfO2 and lower formation enthalpy of Ni2+ species during electrical forming. Both the electrical and physical results supported a Ni-injection mechanism for the filament formation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3695078]
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.411
Times cited: 29
DOI: 10.1063/1.3695078
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“Effect of grain boundary on the buckling of graphene nanoribbons”. Neek-Amal M, Peeters FM, Applied physics letters 100, 101905 (2012). http://doi.org/10.1063/1.3692573
Abstract: The buckling of graphene nano-ribbons containing a grain boundary is studied using atomistic simulations where free and supported boundary conditions are invoked. We consider the buckling transition of two kinds of grain boundaries with special symmetry. When graphene contains a large angle grain boundary with theta = 21.8 degrees, the buckling strains are larger than those of perfect graphene when the ribbons with free (supported) boundary condition are subjected to compressive tension parallel (perpendicular) to the grain boundary. This is opposite for the results of theta = 32.2 degrees. The shape of the deformations of the buckled graphene nanoribbons depends on the boundary conditions, the presence of the particular used grain boundaries, and the direction of applied in-plane compressive tension. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3692573]
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 18
DOI: 10.1063/1.3692573
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“First-principles simulation of oxygen diffusion in HfOx : role in the resistive switching mechanism”. Clima S, Chen YY, Degraeve R, Mees M, Sankaran K, Govoreanu B, Jurczak M, De Gendt S, Pourtois G, Applied physics letters 100, 133102 (2012). http://doi.org/10.1063/1.3697690
Abstract: Transition metal oxide-based resistor random access memory (RRAM) takes advantage of oxygen-related defects in its principle of operation. Since the change in resistivity of the material is controlled by the oxygen deficiency level, it is of major importance to quantify the kinetics of the oxygen diffusion, key factor for oxide stoichiometry. Ab initio accelerated molecular dynamics techniques are employed to investigate the oxygen diffusivity in amorphous hafnia (HfOx, x = 1.97, 1.0, 0.5). The computed kinetics is in agreement with experimental measurements. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3697690]
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.411
Times cited: 63
DOI: 10.1063/1.3697690
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“Ballistic spin transport through electronic stub tuners : spin precession, selection, and square-wave transmission”. Wang XF, Vasilopoulos P, Peeters FM, Applied physics letters 80, 1400 (2002). http://doi.org/10.1063/1.1455146
Abstract: Ballistic spin transport is studied through electronic tuners with double stubs attached to them. The spins precess due to the spin-orbit interaction. Injected polarized spins can exit the structure polarized in the opposite direction. A nearly square-wave spin transmission, with values 1 and 0, can be obtained using a periodic system of symmetric stubs and changing their length or width. The gaps in the transmission can be widened using asymmetric stubs. An additional modulation is obtained upon combining stub structures with different values of the spin-orbit strength. D 2002 American Institute of Physics.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 49
DOI: 10.1063/1.1455146
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“Magnetic and electronic properties of the interface between half metallic Fe3O4 and semiconducting ZnO”. Brück S, Paul M, Tian H, Müller A, Kufer D, Praetorius C, Fauth K, Audehm P, Goering E, Verbeeck J, Van Tendeloo G, Sing M, Claessen R;, Applied physics letters 100, 081603 (2012). http://doi.org/10.1063/1.3687731
Abstract: We have investigated the magnetic depth profile of an epitaxial Fe3O4 thin film grown directly on a semiconducting ZnO substrate by soft x-ray resonant magnetic reflectometry (XRMR) and electron energy loss spectroscopy (EELS). Consistent chemical profiles at the interface between ZnO and Fe3O4 are found from both methods. Valence selective EELS and XRMR reveal independently that the first monolayer of Fe at the interface between ZnO and Fe3O4 contains only Fe3+ ions. Besides this narrow 2.5 Å interface layer, Fe3O4 shows magnetic bulk properties throughout the whole film making highly efficient spin injection in this system feasible.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 12
DOI: 10.1063/1.3687731
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“Quantum-confined magneto-Stark effect in diluted magnetic semiconductor coupled quantum wells”. Chang K, Xia JB, Wu HB, Feng SL, Peeters FM, Applied physics letters 80, 1788 (2002). http://doi.org/10.1063/1.1459491
Abstract: The magneto-Stark effect in a diluted magnetic semiconductor (DMS) coupled quantum well (CQW) induced by an in-plane magnetic field is investigate theoretically. Unlike the usual electro-Stark effects, in a DMS CQW the Lorenz force leads to a spatially separated exciton. The in-plane magnetic field can shift the ground state of the magnetoexciton from a zero in-plane center of mass (CM)/momentum to a finite CM momentum, and render the ground state of magnetoexciton stable against radiative recombination due to momentum conservation. (C) 2002 American Institute of Physics.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 8
DOI: 10.1063/1.1459491
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“Spin-dependent transmission through a chain of rings : influence of a periodically modulated spin-orbit interaction strength or ring radius”. Molnar B, Vasilopoulos P, Peeters FM, Applied physics letters 85, 612 (2004). http://doi.org/10.1063/1.1775283
Abstract: We study ballistic electron transport through a finite chain of quantum circular rings in the presence of spin-orbit interaction of strength alpha. For a single ring, the transmission and reflection coefficients are obtained analytically and from them the conductance for a chain of rings as a function of alpha and of the wave vector k of the incident electron. We show that due to destructive spin interferences, the chain can be totally opaque for certain ranges of k, the width of which depends on the value of alpha. A periodic modulation of the strength alpha or of the ring radius widens the gaps considerably and produces a nearly binary conductance output. (C) 2004 American Institute of Physics.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 26
DOI: 10.1063/1.1775283
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“Nanoscale analysis of interfaces in a metal/oxide/oxide trilayer obtained by pulsed laser deposition”. Fix T, Ulhaq-Bouillet C, Colis S, Dinia A, Bertoni G, Verbeeck J, Van Tendeloo G, Applied physics letters 91, 023106 (2007). http://doi.org/10.1063/1.2755699
Abstract: Sr2FeMoO6/SrTiO3/CoFe2 trilayers grown by pulsed laser deposition on SrTiO3 (001) are investigated by transmission electron microscopy and electron energy loss spectroscopy. The stack is epitaxial, independent of whether the CoFe2 electrode is grown at 500 or at 50 degrees C. Thus it is possible to obtain epitaxy near room temperature. The SrTiO3/CoFe2 interface is quite sharp, while the Sr2FeMoO6/SrTiO3 interface presents regions of Fe depletion. The chemical composition of the films is close to the nominal stoichiometries. These results could be useful for the growth of heteroepitaxial devices and magnetic tunnel junctions. (C) 2007 American Institute of Physics.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 16
DOI: 10.1063/1.2755699
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“Atomic scale electron vortices for nanoresearch”. Verbeeck J, Schattschneider P, Lazar S, Stöger-Pollach M, Löffler S, Steiger-Thirsfeld A, Van Tendeloo G, Applied physics letters 99, 203109 (2011). http://doi.org/10.1063/1.3662012
Abstract: Electron vortex beams were only recently discovered and their potential as a probe for magnetism in materials was shown. Here we demonstrate a method to produce electron vortex beams with a diameter of less than 1.2 Å. This unique way to prepare free electrons to a state resembling atomic orbitals is fascinating from a fundamental physics point of view and opens the road for magnetic mapping with atomic resolution in an electron microscope.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 90
DOI: 10.1063/1.3662012
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“Inelastic electron tunneling spectroscopy of HfO2 gate stacks : a study based on first-principles modeling”. Scalise E, Houssa M, Pourtois G, Afanas'ev VV, Stesmans A, Applied physics letters 99, 132101 (2011). http://doi.org/10.1063/1.3644158
Abstract: A first-principles modeling approach is used to investigate the vibrational properties of HfO2. The calculated phonon density of states is compared to experimental results obtained from inelastic electron tunneling spectroscopy (IETS) of various metal-oxide-semiconductor devices with HfO2 gate stacks. This comparison provides deep insights into the nature of the signatures of the complicated IETS spectra and provides valuable structural information about the gate stack, such as the possible presence of oxygen vacancies in jet-vapour deposited HfO2. Important structural differences between the interface of atomic-layer or molecular-beam deposited HfO2 and the Si substrate are also revealed.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.411
Times cited: 1
DOI: 10.1063/1.3644158
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“Low-field mobility in ultrathin silicon nanowire junctionless transistors”. Sorée B, Magnus W, Vandenberghe W, Applied physics letters 99, 233509 (2011). http://doi.org/10.1063/1.3669509
Abstract: We theoretically investigate the phonon, surface roughness and ionized impurity limited low-field mobility of ultrathin silicon n-type nanowire junctionless transistors in the long channel approximation with wire radii ranging from 2 to 5 nm, as function of gate voltage. We show that surface roughness scattering is negligible as long as the wire radius is not too small and ionized impurity scattering is the dominant scattering mechanism. We also show that there exists an optimal radius where the ionized impurity limited mobility exhibits a maximum.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 20
DOI: 10.1063/1.3669509
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“Tuning of anisotropy in two-electron quantum dots by spin-orbit interactions”. Liu Y, Cheng F, Li XJ, Peeters FM, Chang K, Applied physics letters 99, 032102 (2011). http://doi.org/10.1063/1.3610961
Abstract: We investigate the influence of the spin-orbit interactions (SOIs) on the electron distribution and the optical absorption of a two-electron quantum dot. It is shown that the interplay between the SOIs makes the two-electron quantum dot behave like two laterally coupled quantum dots and the anisotropic distribution can be rotated from [110] to [11®0] by reversing the direction of the perpendicular electric field and detect it through the optical absorption spectrum.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 8
DOI: 10.1063/1.3610961
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“Resistive switching at manganite/manganite interfaces”. Kalkert C, Krisponeit J-O, Esseling M, Lebedev OI, Moshnyaga V, Damaschke B, Van Tendeloo G, Samwer K, Applied physics letters 99, 132512 (2011). http://doi.org/10.1063/1.3643425
Abstract: We report bipolar resistive switching between the interfaces of manganite nanocolumns. La0.7Sr0.3MnO3 films were prepared on Al2O3 substrates, where the films grow in nanocolumns from the substrate to the surface. Conductive atomic force microscopy directly detects that the resistive switching is located at the boundaries of the grains. Furthermore, mesoscopic transport measurements reveal a tunnel magnetoresistance. In combination with the resistive switching, this leads to a total of four different resistive states.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 10
DOI: 10.1063/1.3643425
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“Electronic properties of two-dimensional hexagonal germanium”. Houssa M, Pourtois G, Afanas'ev VV, Stesmans A, Applied physics letters 96, 082111 (2010). http://doi.org/10.1063/1.3332588
Abstract: The electronic properties of two-dimensional hexagonal germanium, so called germanene, are investigated using first-principles simulations. Consistent with previous reports, the surface is predicted to have a poor metallic behavior, i.e., being metallic with a low density of states at the Fermi level. It is found that biaxial compressively strained germanene is a gapless semiconductor with linear energy dispersions near the K pointslike graphene. The calculated Fermi velocity of germanene is almost independent of the strain and is about 1.7×10<sup>6</sup> m/s, quite comparable to the value in graphene.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.411
Times cited: 86
DOI: 10.1063/1.3332588
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“Structural and vibrational properties of amorphous GeO2 from first-principles”. Scalise E, Houssa M, Pourtois G, Afanas'ev VV, Stesmans A, Applied physics letters 98, 202110 (2011). http://doi.org/10.1063/1.3593036
Abstract: The structural and vibrational properties of amorphous germanium oxide (a-GeO<sub>2</sub>) are investigated using first-principles calculations based on density functional theory. We first generate an a-GeO<sub>2</sub> structure by first-principles molecular dynamics and analyze its structural properties. The vibrational spectra is then calculated within a density-functional approach. Both static and dynamic properties are in good agreement with experimental data. We next generate defects in our structure (oxygen vacancies with several density and charge states) and consider the most stable atomic configurations, focusing on the vibrational features of threefold coordinated O and divalent Ge centers.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.411
Times cited: 226
DOI: 10.1063/1.3593036
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“Three-dimensional ferromagnetic architectures with multiple metastable states”. Nasirpouri F, Engbarth MA, Bending SJ, Peter LM, Knittel A, Fangohr H, Milošević, MV, Applied physics letters 98, 222506 (2011). http://doi.org/10.1063/1.3595339
Abstract: We demonstrate controllable dual-bath electrodeposition of nickel on architecture-tunable three-dimensional (3D) silver microcrystals. Magnetic hysteresis loops of individual highly faceted Ag-Ni core-shell elements reveal magnetization reversal that comprises multiple sharp steps corresponding to different stable magnetic states. Finite-element micromagnetic simulations on smaller systems show several jumps during magnetization reversal which correspond to transitions between different magnetic vortex states. Structures of this type could be realizations of an advanced magnetic data storage architecture whereby each element represents one multibit, storing a combination of several conventional bits depending on the overall number of possible magnetic states associated with the 3D core-shell shape.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 8
DOI: 10.1063/1.3595339
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“Spin and momentum filtering of electrons on the surface of a topological insulator”. Wu Z, Peeters FM, Chang K, Applied physics letters 98, 162101 (2011). http://doi.org/10.1063/1.3581887
Abstract: We investigate theoretically the transport properties of Dirac fermions on the surface of a three-dimensional topological insulator. Dirac electrons can be totally reflected in front of a magnetic/electric p-n junction. For a p-n-p structure, multiple total internal reflections at the interfaces result in the bound states in the channel, which behaves like an electronic waveguide. This p-n-p like structure exhibits spin and momentum filtering features and could be used as a spin and/or charge diode.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 33
DOI: 10.1063/1.3581887
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“Impact of field-induced quantum confinement in tunneling field-effect devices”. Vandenberghe WG, Sorée B, Magnus W, Groeseneken G, Fischetti MV, Applied physics letters 98, 143503 (2011). http://doi.org/10.1063/1.3573812
Abstract: Being the working principle of a tunnel field-effect transistor, band-to-band tunneling is given a rigorous quantum mechanical treatment to incorporate confinement effects, multiple electron and hole valleys, and interactions with phonons. The model reveals that the strong band bending near the gate dielectric, required to create short tunnel paths, results in quantization of the energy bands. Comparison with semiclassical models reveals a big shift in the onset of tunneling. The effective mass difference of the distinct valleys is found to reduce the subthreshold swing steepness.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 76
DOI: 10.1063/1.3573812
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“Fe3O4/ZnO : a high-quality magnetic oxide-semiconductor heterostructure by reactive deposition”. Paul M, Kufer D, Müller A, Brück S, Goering E, Kamp M, Verbeeck J, Tian H, Van Tendeloo G, Ingle NJC, Sing M, Claessen R, Applied physics letters 98, 012512 (2011). http://doi.org/10.1063/1.3540653
Abstract: We demonstrate the epitaxial growth of Fe<sub>3</sub>O<sub>4</sub> films on ZnO by a simple reactive deposition procedure using molecular oxygen as an oxidizing agent. X-ray photoelectron spectroscopy results evidence that the iron-oxide surface is nearly stoichiometric magnetite. X-ray diffraction results indicate monocrystalline epitaxy and almost complete structural relaxation. Scanning transmission electron micrographs reveal that the microstructure consists of domains which are separated by antiphase boundaries or twin boundaries. The magnetite films show rather slow magnetization behavior in comparison with bulk crystals probably due to reduced magnetization at antiphase boundaries in small applied fields.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 27
DOI: 10.1063/1.3540653
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“Elucidating the asymmetric behavior of the discharge in a dual magnetron sputter deposition system”. Yusupov M, Bultinck E, Depla D, Bogaerts A, Applied physics letters 98, 131502 (2011). http://doi.org/10.1063/1.3574365
Abstract: A magnetron discharge is characterized by drifts of the charged particles guiding center, caused by the magnetic field, in contrast to unmagnetized discharges. Because of these drifts, a pronounced asymmetry of the discharge can be observed in a dual magnetron setup. In this work, it is found that the shape of the discharge in a dual magnetron configuration depends on the magnetic field configuration. In a closed configuration, strong drifts were observed in one preferential direction, whereas in a mirror configuration the deflection of the discharge was not so pronounced. Our calculations confirm experimental observations.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.411
Times cited: 4
DOI: 10.1063/1.3574365
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“Enhanced stability of hydrogen atoms at the graphene/graphane interface of nanoribbons”. Ao ZM, Hernández-Nieves AD, Peeters FM, Li S, Applied physics letters 97, 233109 (2010). http://doi.org/10.1063/1.3525377
Abstract: The thermal stability of graphene/graphane nanoribbons (GGNRs) is investigated using density functional theory. It is found that the energy barriers for the diffusion of hydrogen atoms on the zigzag and armchair interfaces of GGNRs are 2.86 and 3.17 eV, respectively, while the diffusion barrier of an isolated H atom on pristine graphene was only ∼ 0.3 eV. These results unambiguously demonstrate that the thermal stability of GGNRs can be enhanced significantly by increasing the hydrogen diffusion barriers through graphene/graphane interface engineering. This may provide new insights for viable applications of GGNRs.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 43
DOI: 10.1063/1.3525377
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“Defected graphene nanoribbons under axial compression”. Neek-Amal M, Peeters FM, Applied physics letters 97, 153118 (2010). http://doi.org/10.1063/1.3496467
Abstract: The buckling of defected rectangular graphene nanoribbons when subjected to axial stress with supported boundary conditions is investigated using atomistic simulations. The buckling strain and mechanical stiffness of monolayer graphene decrease with the percentage of randomly distributed vacancies. The elasticity to plasticity transition in the stress-strain curve, at low percentage of vacancies, are found to be almost equal to the buckling strain thresholds and they decrease with increasing percentage of vacancies.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 43
DOI: 10.1063/1.3496467
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“Quasiparticle energies and uniaxial pressure effects on the properties of SnO2”. Saniz R, Dixit H, Lamoen D, Partoens B, Applied physics letters 97, 261901 (2010). http://doi.org/10.1063/1.3532109
Abstract: We calculate the quasiparticle energy spectrum of SnO2 within the GW approximation, properly taking into account the contribution of core levels to the energy corrections. The calculated fundamental gap is of 3.85 eV. We propose that the difference with respect to the experimental optical gap (3.6 eV) is due to excitonic effects in the latter. We further consider the effect applied on uniaxial pressure along the c-axis. Compared to GW, the effect of pressure on the quasiparticle energies and band gap is underestimated by the local-density approximation. The quasiparticle effective masses, however, appear to be well described by the latter.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 23
DOI: 10.1063/1.3532109
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“Symmetry and electronic states of Mn2+ in ZnS nanowires with mixed hexagonal and cubic stacking”. Chen L, Kirilenko D, Stesmans A, Nguyen XS, Binnemans K, Goderis B, Vanacken J, Lebedev O, Van Tendeloo G, Moshchalkov VV, Applied physics letters 97, 041918 (2010). http://doi.org/10.1063/1.3475017
Abstract: Electron spin resonance and electronic spectroscopy techniques were used to study the symmetry and electronic structure of Mn2+ dopants in solvothermally synthesized ZnS nanowires. The average diameter of ∼ 5 nm leads to the observable quantum confinement effects in the photoluminescence excitation spectra. The results clearly demonstrate the three symmetry locations of Mn2+ incorporation. Together with the inferred Mn2+ center densities, these data indicate a much higher efficiency of Mn2+ substitution in the nanowire sample with about two times larger diameter.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 5
DOI: 10.1063/1.3475017
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“Electric field: A catalyst for hydrogenation of graphene”. Ao ZM, Peeters FM, Applied physics letters 96, 3 (2010). http://doi.org/10.1063/1.3456384
Abstract: Due to the importance of hydrogenation of graphene for several applications, we present an alternative approach to hydrogenate graphene based on density functional theory calculations. We find that a negative perpendicular electric field F can act as a catalyst to reduce the energy barrier for molecular H<sub>2</sub> dissociative adsorption on graphene. Increasing -F above 0.02 a.u. (1 a.u.=5.14×10<sup>11</sup> V/m), this hydrogenation process occurs smoothly without any potential barrier.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 88
DOI: 10.1063/1.3456384
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