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Author Cheng, J.-P.; McCombe, B.D.; Shi, J.M.; Peeters, F.M.; Devreese, J.T.
Title Magnetopolaron effect on shallow donors in GaAs Type A1 Journal article
Year 1993 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 48 Issue Pages 7910-7914
Keywords A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor (up)
Language Wos A1993LY66500018 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121; 0163-1829 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.736 Times cited 46 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:5783 Serial 1925
Permanent link to this record
 
 
Author Shi, J.M.; Peeters, F.M.; Devreese, J.T.; Imanaka, Y.; Miura, N.
Title Magnetopolaron effect on the donor transition energies in ZnSe Type A1 Journal article
Year 1995 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 52 Issue Pages 17205-17209
Keywords A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor (up)
Language Wos A1995TN92700040 Publication Date 2002-07-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.736 Times cited 7 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:11698 Serial 1926
Permanent link to this record
 
 
Author Papp, G.; Peeters, F.M.
Title Magnetoresistance in a hybrid ferromagnetic/semiconductor device Type A1 Journal article
Year 2010 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume 107 Issue 6 Pages 063718,1-063718,4
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Ballistic transport of a two-dimensional electron gas (2DEG) in a rectangle shaped wire, subjected to a local nonhomogeneous magnetic field that results from an in-plane magnetized ferromagnetic (FM) strip deposited above the 2DEG, is investigated theoretically. We found a positive magnetoresistance (MR), which exhibits hysteresis behavior with respect to the direction of the magnetic field sweep, in agreement with a recent experiment. This positive MR can be tuned by applying a gate voltage to the FM strip.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor (up)
Language Wos 000276210800063 Publication Date 2010-04-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.068 Times cited 10 Open Access
Notes ; ; Approved Most recent IF: 2.068; 2010 IF: 2.079
Call Number UA @ lucian @ c:irua:82281 Serial 1927
Permanent link to this record
 
 
Author Çakir, D.; Otalvaro, D.M.; Brocks, G.
Title Magnetoresistance in multilayer fullerene spin valves: A first-principles study Type A1 Journal article
Year 2014 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 90 Issue 24 Pages 245404
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Carbon-based molecular semiconductors are explored for application in spintronics because their small spinorbit coupling promises long spin lifetimes. We calculate the electronic transport from first principles through spin valves comprising bi-and tri-layers of the fullerene molecules C-60 and C-70, sandwiched between two Fe electrodes. The spin polarization of the current, and the magnetoresistance depend sensitively on the interactions at the interfaces between the molecules and the metal surfaces. They are much less affected by the thickness of the molecular layers. A high current polarization (CP > 90%) and magnetoresistance (MR > 100%) at small bias can be attained using C-70 layers. In contrast, the current polarization and the magnetoresistance at small bias are vanishingly small for C-60 layers. Exploiting a generalized Julliere model we can trace the differences in spin-dependent transport between C-60 and C-70 layers to differences between the molecule-metal interface states. These states also allow one to interpret the current polarization and the magnetoresistance as a function of the applied bias voltage.
Address
Corporate Author Thesis
Publisher Place of Publication Editor (up)
Language Wos 000345875200005 Publication Date 2014-12-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 13 Open Access
Notes ; ; Approved Most recent IF: 3.836; 2014 IF: 3.736
Call Number UA @ lucian @ c:irua:122177 Serial 1928
Permanent link to this record
 
 
Author Matulis, A.; Peeters, F.M.
Title Magnetoresistance of a two-dimensional electron gas in weakly modulated magnetic fields Type A1 Journal article
Year 2000 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 62 Issue Pages 91-94
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor (up)
Language Wos 000088037000024 Publication Date 2002-07-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 41 Open Access
Notes Approved Most recent IF: 3.836; 2000 IF: NA
Call Number UA @ lucian @ c:irua:28512 Serial 1929
Permanent link to this record
 
 
Author Berdiyorov, G.R.; Chao, X.H.; Peeters, F.M.; Wang, H.B.; Moshchalkov, V.V.; Zhu, B.Y.
Title Magnetoresistance oscillations in superconducting strips : a Ginzburg-Landau study Type A1 Journal article
Year 2012 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 86 Issue 22 Pages 224504-224508
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Within the time-dependent Ginzburg-Landau theory we study the dynamic properties of current-carrying superconducting strips in the presence of a perpendicular magnetic field. We found pronounced voltage peaks as a function of the magnetic field, the amplitude of which depends both on sample dimensions and external parameters. These voltage oscillations are a consequence of moving vortices, which undergo alternating static and dynamic phases. At higher fields or for high currents, the continuous motion of vortices is responsible for the monotonic background on which the resistance oscillations due to the entry of additional vortices are superimposed. Mechanisms for such vortex-assisted resistance oscillations are discussed. Qualitative changes in the magnetoresistance curves are observed in the presence of random defects, which affect the dynamics of vortices in the system.
Address
Corporate Author Thesis
Publisher Place of Publication Editor (up)
Language Wos 000312064300004 Publication Date 2012-12-10
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 31 Open Access
Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl) and the ESF-NES program. G. R. B. acknowledges support from FWO-Vl. B.Y.Z. acknowledges the support from the MOST 973 Projects No. 2011CBA00110 and No. 2009CB930803, and the National Natural Science Foundation of China. V. V. M. acknowledges support from the Methusalem Funding by the Flemish Government. ; Approved Most recent IF: 3.836; 2012 IF: 3.767
Call Number UA @ lucian @ c:irua:105969 Serial 1930
Permanent link to this record
 
 
Author Chen, J.-J.; Ke, X.; Van Tendeloo, G.; Meng, J.; Zhou, Y.-B.; Liao, Z.-M.; Yu, D.-P.
Title Magnetotransport across the metal-graphene hybrid interface and its modulation by gate voltage Type A1 Journal article
Year 2015 Publication Nanoscale Abbreviated Journal Nanoscale
Volume 7 Issue 7 Pages 5516-5524
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract The graphene-metal contact is very important for optimizing the performance of graphene based electronic devices. However, it is difficult to probe the properties of the graphene/metal interface directly via transport measurements in traditional graphene lateral devices, because the dominated transport channel is graphene, not the interface. Here, we employ the Au/graphene/Au vertical and lateral hybrid structure to unveil the metal-graphene interface properties, where the transport is dominated by the charge carriers across the interface. The magnetoresistance (MR) of Au/monolayer graphene/Au and Au/stacked two-layered graphene/Au devices is measured and modulated by gate voltage, demonstrating that the interface is a device. The gate-tunable MR is identified from the graphene lying on the SiO2 substrate and underneath the top metal electrode. Our unique structures couple the in-plane and out-of-plane transport and display linear MR with small amplitude oscillations at low temperatures. Under a magnetic field, the electronic coupling between the graphene edge states and the electrode leads to the appearance of quantum oscillations. Our results not only provide a new pathway to explore the intrinsic transport mechanism at the graphene/metal interface but also open up new vistas of magnetoelectronics.
Address
Corporate Author Thesis
Publisher Place of Publication Cambridge Editor (up)
Language Wos 000351372400050 Publication Date 2015-02-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2040-3364;2040-3372; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 7.367 Times cited 3 Open Access
Notes 246791 Countatoms Approved Most recent IF: 7.367; 2015 IF: 7.394
Call Number c:irua:125533 Serial 1931
Permanent link to this record
 
 
Author van der Burgt, M.; Karavolas, V.C.; Peeters, F.M.; Singleton, J.; Nicholas, R.J.; Herlach, F.; Harris, J.J.; van Hove, M.; Borghs, G.
Title Magnetotransport in a pseudomorhic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si δ-doping layer Type A1 Journal article
Year 1995 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 52 Issue Pages 12218-12231
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor (up)
Language Wos A1995TB96600102 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121; 0163-1829 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.736 Times cited 35 Open Access
Notes Approved
Call Number UA @ lucian @ c:irua:12192 Serial 1932
Permanent link to this record
 
 
Author van der Burgt, M.; Karavolas, V.C.; Peeters, F.M.; Singleton, J.; Nicholas, R.J.; Herlach, F.; Harris, J.J.; Van Hove, M.; Borghs, G.
Title Magnetotransport in a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si \delta-doping layer Type A1 Journal article
Year 1995 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 52 Issue 16 Pages 12218-12231
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Magnetotransport properties of a pseudomorphic GsAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T = 1.4 and 4.2 K. The structure studied consists of a Si delta layer parallel to a Ga0.8In0.2As quantum well (QW). The dark electron density of the structure is n(c) = 1.67 x 10(16) m(-2). By illumination the density can be increased up to a factor of 4; this way the second subband in the Ga0.08In0.2As QW can become populated as well as the Si delta layer. The presence of electrons in the delta layer results in drastic changes in the transport data, especially at magnetic fields beyond 30 T. The phenomena observed are interpreted as (i) magnetic freeze-out of carriers in the delta layer when a low density of electrons is present in the delta layer, and (ii) quantization of the electron motion in the two-dimensional electron gases in both the Ga0.8In0.2As QW and the Si delta layer in the case of high densities. These conclusions are corroborated by the numerical results of our theoretical model. We obtain satisfactory agreement between model and experiment.
Address
Corporate Author Thesis
Publisher Place of Publication Editor (up)
Language Wos A1995TB96600102 Publication Date 2002-07-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.736 Times cited 43 Open Access
Notes Approved PHYSICS, APPLIED 28/145 Q1 #
Call Number UA @ lucian @ c:irua:99708 Serial 1933
Permanent link to this record
 
 
Author Zarenia, M.; Vasilopoulos, P.; Peeters, F.M.
Title Magnetotransport in periodically modulated bilayer graphene Type A1 Journal article
Year 2012 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 85 Issue 24 Pages 245426-245426,10
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Magnetotransport in bilayer graphene in the presence of a weak and periodic potential is investigated in the presence of a perpendicular magnetic field B. The modulation broadens the Landau levels into bands and for weak magnetic fields leads to the well-known Weiss oscillations in their bandwidth and their transport coefficients at very low B and to the Shubnikov-de Haas oscillations at larger B. The amplitude of the Weiss oscillations is severely reduced if the periodic potentials applied to the two layers oscillate out of phase. We also contrast some results with those corresponding to single-layer graphene. Relative to them the flat-band condition and the oscillation amplitude differ substantially, due to the interlayer coupling, and agree only when this coupling is extremely weak. We further show that the Hall conductivity exhibits the well-known steps at half-integer and integer multiples of 4e(2)/h in single-layer and bilayer graphene, respectively, even for very weak magnetic fields. The results are pertinent to weak and periodic corrugations when the potential modulation dominates the strain-induced magnetic modulation.
Address
Corporate Author Thesis
Publisher Place of Publication Editor (up)
Language Wos 000305253600012 Publication Date 2012-06-14
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 21 Open Access
Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl), the European Science Foundation (ESF) under the EUROCORES program EuroGRAPHENE (project CON-GRAN), and the Canadian NSERC Grant No. OGP0121756. ; Approved Most recent IF: 3.836; 2012 IF: 3.767
Call Number UA @ lucian @ c:irua:99077 Serial 1934
Permanent link to this record
 
 
Author Bogaerts, R.; van Bockstal, L.; Herlach, F.; Peeters, F.M.; DeRosa, F.; Palmstrøm, C.J.; Allen, S.J.
Title Magnetotransport measurements on thin Ga1-xErxAs epitaxial films in pulsed magnetic fields Type A1 Journal article
Year 1992 Publication Physica: B : condensed matter Abbreviated Journal Physica B
Volume 177 Issue Pages 425-429
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Magnet0transport measurements in pulsed fields up to 46 T and at temperatures between 1.4 and 210 K have been performed on thin semimetallic epitaxial layers of Sc1-xErxAs buried inside insulating GaAs. A consistent description is obtained of the magnetic field dependence of the Hall resistance and the different frequencies of the Shubnikov-de Hass oscillations.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor (up)
Language Wos A1992HP25000089 Publication Date 2002-10-17
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.319 Times cited 12 Open Access
Notes Approved PHYSICS, APPLIED 47/145 Q2 #
Call Number UA @ lucian @ c:irua:3025 Serial 1935
Permanent link to this record
 
 
Author de Keyser, A.; Bogaerts, R.; van Bockstal, L.; Hoeks, W.; Herlach, F.; Karavolas, V.C.; Peeters, F.M.; van de Graaf, W.; Borghs, G.
Title Magnetotransport properties of Si-δ-doped InSb layers grown on GaAs Type A1 Journal article
Year 1995 Publication Physica: B : condensed matter Abbreviated Journal Physica B
Volume 211 Issue Pages 455-457
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor (up)
Language Wos A1995RD54400118 Publication Date 2003-05-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.319 Times cited 2 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:12210 Serial 1936
Permanent link to this record
 
 
Author Krstajić, P.; Peeters, F.M.
Title Magnetotunneling of holes through single and double barriers using a multiband treatment Type A1 Journal article
Year 2005 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 71 Issue Pages 115321,1-10
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor (up)
Language Wos 000228065500096 Publication Date 2005-03-24
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 5 Open Access
Notes Approved Most recent IF: 3.836; 2005 IF: 3.185
Call Number UA @ lucian @ c:irua:69404 Serial 1937
Permanent link to this record
 
 
Author Zha, G.-Q.; Covaci, L.; Peeters, F.M.; Zhou, S.-P.
Title Majorana fermion states and fractional flux periodicity in mesoscopic d-wave superconducting loops with spin-orbit interaction Type A1 Journal article
Year 2014 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 90 Issue 1 Pages 014522
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We numerically investigate the spin-orbit (SO) coupling effect on the magnetic flux evolution of energy and supercurrent in mesoscopic d-wave superconducting loops by solving the spin-generalized Bogoliubov-de Gennes equations self-consistently. It is found that the energy spectrum splits when the SO interaction is involved and the Majorana zero mode can be realized in the [100] edges of square systems for an appropriate SO coupling strength. Superconducting phase transitions appear when the energy gap closes, accompanied by energy jumps between different energy parabolas in the ground state, which provides a possible mechanism to support fractional flux periodicity of supercurrent. Moreover, in the case of rectangular loops with SO coupling, the jumps of the ground-state energy gradually disappear by increasing the ratio of length to height of the sample, and a paramagnetic response with opposite direction of the screening current around zero flux value can occur in such systems.
Address
Corporate Author Thesis
Publisher Place of Publication Editor (up)
Language Wos 000341233800010 Publication Date 2014-07-31
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 7 Open Access
Notes ; This work was supported by National Natural Science Foundation of China under Grants No. 61371020 and No. 61271163, by Visiting Scholar Program of Shanghai Municipal Education Commission, by Innovation Program of Shanghai Municipal Education Commission under Grant No. 13YZ006, and by the Flemish Science Foundation (FWO-Vl). ; Approved Most recent IF: 3.836; 2014 IF: 3.736
Call Number UA @ lucian @ c:irua:119266 Serial 1938
Permanent link to this record
 
 
Author Grujić, M.M.
Title Manifestations of intrinsic and induced magnetic properties of graphene nanostructures Type Doctoral thesis
Year 2015 Publication Abbreviated Journal
Volume Issue Pages
Keywords Doctoral thesis; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher University of Antwerp, Faculty of Sciences, Department of Physics Place of Publication Antwerp Editor (up)
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:126212 Serial 1939
Permanent link to this record
 
 
Author Nowak, M.P.; Szafran, B.; Peeters, F.M.
Title Manipulation of two-electron states by the electric field in stacked self-assembled dots Type A1 Journal article
Year 2008 Publication Journal of physics : condensed matter Abbreviated Journal J Phys-Condens Mat
Volume 20 Issue 39 Pages 395225,1-395225,14
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract A pair of electrons in vertically stacked self-assembled quantum dots is studied and the singlettriplet energy splitting is calculated in an external electric field using the configuration-interaction method. We show that for double quantum dots the dependence of the singlet energy levels on the electric field involves multiple avoided crossings of three energy levels. The exchange interaction, i.e., the energy difference of the lowest triplet and lowest singlet states, can be tuned by an electric field in a wide range of several tens of meV. For electric fields exceeding a threshold value the exchange interaction becomes a linear function of the field when the two electrons in the singlet state start to occupy the same dot. We also consider non-symmetric confinement, non-perfectly aligned dots, in horizontal as well as vertical field orientation. In a stack of three vertically coupled dots the depth of the confinement in the central dot can be used to enhance the exchange interaction. For a deeper central dot the dependence of the exchange interaction on the electric field is anomalousit initially decreases when the field is applied in both directions parallel and antiparallel to the axis of the stack. Such a behavior is never observed for a pair of quantum dots.
Address
Corporate Author Thesis
Publisher Place of Publication London Editor (up)
Language Wos 000259034200032 Publication Date 2008-09-05
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-8984;1361-648X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.649 Times cited 5 Open Access
Notes Approved Most recent IF: 2.649; 2008 IF: 1.900
Call Number UA @ lucian @ c:irua:76592 Serial 1940
Permanent link to this record
 
 
Author Nguten, N.T.T.; Peeters, F.M.
Title Many-body effects in the cyclotron resonance of a magnetic dot Type A1 Journal article
Year 2009 Publication Physical review : B : solid state Abbreviated Journal Phys Rev B
Volume 80 Issue 11 Pages 115335,1-115335,9
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Intraband cyclotron resonance (CR) transitions of a two-electron quantum dot containing a single magnetic ion is investigated for different Coulomb interaction strengths and different positions of the magnetic ion. In contrast to the usual parabolic quantum dots where CR is independent of the number of electrons, we found here that due to the presence of the magnetic ion Kohn's theorem no longer holds and CR is different for systems with different number of electrons and different effective electron-electron Coulomb interaction strength. Many-body effects result in shifts in the transition energies and change the number of CR lines. The position of the magnetic ion inside the quantum dot affects the structure of the CR spectrum by changing the position and the number of crossings and anticrossings in the transition energies and oscillator strengths.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor (up)
Language Wos 000270383200110 Publication Date 2009-09-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 6 Open Access
Notes Approved Most recent IF: 3.836; 2009 IF: 3.475
Call Number UA @ lucian @ c:irua:79228 Serial 1941
Permanent link to this record
 
 
Author Vodolazov, D.Y.; Peeters, F.M.; Morelle, M.; Moshchalkov, V.V.
Title Masking effect of heat dissipation on the current-voltage characteristics of a mesoscopic superconducting sample with leads Type A1 Journal article
Year 2005 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 71 Issue Pages 184502,1-8
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor (up)
Language Wos 000230124100101 Publication Date 2005-05-09
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 43 Open Access
Notes Approved Most recent IF: 3.836; 2005 IF: 3.185
Call Number UA @ lucian @ c:irua:69409 Serial 1951
Permanent link to this record
 
 
Author Gijbels, R.; van Straaten, M.; Bogaerts, A.
Title Mass spectrometric analysis of inorganic solids: GDMS and other methods Type A1 Journal article
Year 1995 Publication Advances in mass spectrometry Abbreviated Journal
Volume 13 Issue Pages 241-256
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor (up)
Language Wos A1995BG78P00013 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0568-000x ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 12 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:12267 Serial 1952
Permanent link to this record
 
 
Author Bogaerts, A.; van Straaten, M.; Gijbels, R.
Title Mathematical modelling of an analytical glow discharge Type H3 Book chapter
Year 1995 Publication Abbreviated Journal
Volume Issue Pages 82-90
Keywords H3 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher KD Marketing Services Place of Publication Milton Keynes Editor (up)
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:10257 Serial 1957
Permanent link to this record
 
 
Author Croitoru, M.D.; van Dyck, D.; Liu, Y.Z.; Zhang, Z.
Title Measurement of specimen thickness by phase change determination in TEM Type A1 Journal article
Year 2008 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 108 Issue 12 Pages 1616-1622
Keywords A1 Journal article; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT); Vision lab
Abstract A non-destructive method for measuring the thickness of thin amorphous films composed of light elements has been developed. The method employs the statistics of the phase of the electron exit wave function. The accuracy of this method has been checked numerically by the multislice method and compared with that based on the mean inner potential.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor (up)
Language Wos 000260808300016 Publication Date 2008-06-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.843 Times cited 2 Open Access
Notes Approved Most recent IF: 2.843; 2008 IF: 2.629
Call Number UA @ lucian @ c:irua:75643 Serial 1961
Permanent link to this record
 
 
Author Müller, E.; Kruse, P.; Gerthsen, D.; Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kling, R.; Waag, A.
Title Measurement of the mean inner potential of ZnO nanorods by transmission electron holography Type A1 Journal article
Year 2005 Publication Applied Physics Letters Abbreviated Journal Appl Phys Lett
Volume 86 Issue 15 Pages
Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor (up)
Language Wos 000228901600121 Publication Date 2005-04-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 5 Open Access
Notes Approved Most recent IF: 3.411; 2005 IF: 4.127
Call Number UA @ lucian @ c:irua:54917 Serial 1963
Permanent link to this record
 
 
Author Felten, A.; Gillon, X.; Gulas, M.; Pireaux, J.-J.; Ke, X.; Van Tendeloo, G.; Bittencourt, C.; Najafi, E.; Hitchcock, A.P.
Title Measuring point defect density in individual carbon nanotubes using polarization-dependent X-ray microscopy Type A1 Journal article
Year 2010 Publication ACS nano Abbreviated Journal Acs Nano
Volume 4 Issue 8 Pages 4431-4436
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The presence of defects in carbon nanotubes strongly modifies their electrical, mechanical, and chemical properties. It was long thought undesirable, but recent experiments have shown that introduction of structural defects using ion or electron irradiation can lead to novel nanodevices. We demonstrate a method for detecting and quantifying point defect density in individual carbon nanotubes (CNTs) based on measuring the polarization dependence (linear dichroism) of the C 1s → π* transition at specific locations along individual CNTs with a scanning transmission X-ray microscope (STXM). We show that STXM can be used to probe defect density in individual CNTs with high spatial resolution. The quantitative relationship between ion dose, nanotube diameter, and defect density was explored by purposely irradiating selected sections of nanotubes with kiloelectronvolt (keV) Ga+ ions. Our results establish polarization-dependent X-ray microscopy as a new and very powerful characterization technique for carbon nanotubes and other anisotropic nanostructures.
Address
Corporate Author Thesis
Publisher Place of Publication Editor (up)
Language Wos 000281052700014 Publication Date 2010-07-07
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1936-0851;1936-086X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 13.942 Times cited 26 Open Access
Notes Approved Most recent IF: 13.942; 2010 IF: 9.865
Call Number UA @ lucian @ c:irua:84734 Serial 1966
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Author van der Burgt, M.; Peeters, F.M.; Singleton, J.; Nicholas, R.J.; Herlach, F.; Harris, J.J.; Foxon, C.T.
Title Measuring quantum Hall resistors in pulsed magnetic fields Type P3 Proceeding
Year 1995 Publication Abbreviated Journal
Volume Issue Pages 750-753
Keywords P3 Proceeding; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher World Scientific Place of Publication Singapore Editor (up)
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:12207 Serial 1968
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Author Hervieu, M.; Michel, C.; Martin, C.; Huvé, M.; Van Tendeloo, G.; Maignan, A.; Pelloquin, D.; Goutenoire, F.; Raveau, B.
Title Mécanismes de la non-stoechiométrie dans les nouveaux supraconducteurs à haute Tc Type A1 Journal article
Year 1994 Publication Journal de physique: 3: applied physics, materials science, fluids, plasma and instrumentation Abbreviated Journal
Volume 4 Issue Pages 2057-2067
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Les Ulis Editor (up)
Language Wos A1994PT17900002 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1155-4320 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:10041 Serial 1973
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Author Çakir, D.; Peeters, F.M.; Sevik, C.
Title Mechanical and thermal properties of h-MX2 (M = Cr, Mo, W; X = O, S, Se, Te) monolayers : a comparative study Type A1 Journal article
Year 2014 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 104 Issue 20 Pages 203110
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Using density functional theory, we obtain the mechanical and thermal properties of MX2 monolayers (where M = Cr, Mo, W and X = O, S, Se, Te). The C-centered phonon frequencies (i.e., A(1), A(2)'', E ', and E ''), relative frequency values of A(1), and E ' modes, and mechanical properties (i.e., elastic constants, Young modulus, and Poisson's ratio) display a strong dependence on the type of metal and chalcogenide atoms. In each chalcogenide (metal) group, transition-metal dichalcogenides (TMDCs) with W (O) atom are found to be much stiffer. Consistent with their stability, the thermal expansion of lattice constants for TMDCs with O (Te) is much slower (faster). Furthermore, in a heterostructure of these materials, the difference of the thermal expansion of lattice constants between the individual components becomes quite tiny over the whole temperature range. The calculated mechanical and thermal properties show that TMDCs are promising materials for heterostructures. (C) 2014 AIP Publishing LLC.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor (up)
Language Wos 000337140800063 Publication Date 2014-05-24
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951;1077-3118; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 130 Open Access
Notes ; Cem Sevik acknowledges the support from Scientific and Technological Research Council of Turkey (TUBITAK-113F096) and Anadolu University (BAP-1306F261 and -1306F281) to this project. We would also like to thank the ULAKBIM High Performance and Grid Computing Center for a generous time allocation for our projects. D. C. was supported by a FWO Pegasus-short Marie Curie Fellowship. Part of this work was supported by the Methusalem foundation of the Flemish Government. ; Approved Most recent IF: 3.411; 2014 IF: 3.302
Call Number UA @ lucian @ c:irua:118379 Serial 1974
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Author Salje, E.K.H.; Zhang, H.; Idrissi, H.; Schryvers, D.; Carpenter, M.A.; Moya, X.; Planes, A.
Title Mechanical resonance of the austenite/martensite interface and the pinning of the martensitic microstructures by dislocations in Cu74.08Al23.13Be2.79 Type A1 Journal article
Year 2009 Publication Physical review: B: condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 80 Issue 13 Pages 134114,1-1134114,8
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract A single crystal of Cu74.08Al23.13Be2.79 undergoes a martensitic phase transition at 246 and 232 K under heating and cooling, respectively. The phase fronts between the austenite and martensite regions of the sample are weakly mobile with a power-law resonance under external stress fields. Surprisingly, the martensite phase is elastically much harder than the austenite phase showing that interfaces between various crystallographic variants are strongly pinned and cannot be moved by external stress while the phase boundary between the austenite and martensite regions in the sample remains mobile. This unusual behavior was studied by dynamical mechanical analysis (DMA) and resonant ultrasound spectroscopy. The remnant strain, storage modulus, and internal friction were recorded simultaneously for different applied forces in DMA. With increasing forces, the remnant strain increases monotonously while the internal friction peak height shows a minimum at 300 mN. Transmission electron microscopy shows that the pinning is generated by dislocations which are inherited from the austenite phase.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor (up)
Language Wos 000271351300033 Publication Date 2009-10-22
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 38 Open Access
Notes Multimat Approved Most recent IF: 3.836; 2009 IF: 3.475
Call Number UA @ lucian @ c:irua:78542 Serial 1975
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Author Zaghi, A.E.; Buffière, M.; Brammertz, G.; Batuk, M.; Lenaers, N.; Kniknie, B.; Hadermann, J.; Meuris, M.; Poortmans, J.; Vleugels, J.
Title Mechanical synthesis of high purity Cu-In-Se alloy nanopowder as precursor for printed CISe thin film solar cells Type A1 Journal article
Year 2014 Publication Advanced powder technology Abbreviated Journal Adv Powder Technol
Volume 25 Issue 4 Pages 1254-1261
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Mechanical alloying and ball milling are low cost, up-scalable techniques for the preparation of high purity chalcogenide nanopowders to be used as precursor material for printing thin film solar cells. In this study, high purity copper indium selenium (Cu-In-Se) alloy nanopowders with 20-200 nm particle size were synthesized from macroscopic elemental Cu, In and Se powders via mechanical alloying and planetary ball milling. The particle size distribution, morphology, composition, and purity level of the synthesized Cu-In-Se alloy nanopowders were investigated. Thin Cu-In-Se alloy nanopowder ink coatings, deposited on Mo-coated glass substrates by doctor blading, were converted into a CuInSe2 semiconductor film by selenization heat treatment in Se vapor. The CuInSe2 film showed semiconducting band gap around 1 eV measured by photoluminescence spectroscopy. CuInSe2 absorber layer based thin film solar cell devices were fabricated to assess their performance. The solar cell device showed a total efficiency of 4.8%, as measured on 0.25 cm(2) area cell. (c) 2014 The Society of Powder Technology Japan. Published by Elsevier B.V. and The Society of Powder Technology Japan. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Zeist Editor (up)
Language Wos 000341871700015 Publication Date 2014-03-17
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-8831; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.659 Times cited 10 Open Access
Notes Approved Most recent IF: 2.659; 2014 IF: 2.638
Call Number UA @ lucian @ c:irua:119896 Serial 1977
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Author Van Daele, B.; Van Tendeloo, G.; Derluyn, J.; Shrivastava, P.; Lorenz, A.; Leys, M.R.; Germain, M.;
Title Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN/GaN high-electron-mobility transistors Type A1 Journal article
Year 2006 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 89 Issue 20 Pages Artn 201908
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor (up)
Language Wos 000242100200030 Publication Date 2006-11-16
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 15 Open Access
Notes Iap V-1; Fwo Approved Most recent IF: 3.411; 2006 IF: 3.977
Call Number UA @ lucian @ c:irua:61919 Serial 1978
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Author Delabie, A.; Sioncke, S.; Rip, J.; van Elshocht, S.; Caymax, M.; Pourtois, G.; Pierloot, K.
Title Mechanisms for the trimethylaluminum reaction in aluminum oxide atomic layer deposition on sulfur passivated germanium Type A1 Journal article
Year 2011 Publication The journal of physical chemistry: C : nanomaterials and interfaces Abbreviated Journal J Phys Chem C
Volume 115 Issue 35 Pages 17523-17532
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Germanium combined with high-κ dielectrics is investigated for the next generations of CMOS devices. Therefore, we study reaction mechanisms for Al2O3 atomic layer deposition on sulfur passivated Ge using calculations based on density functional theory and total reflection X-ray fluorescence (TXRF). TXRF indicates 6 S/nm2 and 4 Al/nm2 after the first TMA/H2O reaction cycle, and growth inhibition from the second reaction cycle on. Calculations are performed on molecular clusters representing −GeSH surface sites. The calculations confirm that the TMA reaction does not affect the S content. On fully SH-terminated Ge, TMA favorably reacts with up to three −GeSH sites, resulting in a near tetrahedral Al coordination. Electron deficient structures with a GeS site shared between two Al atoms are proposed. The impact of the cluster size on the structures and reaction energetics is systematically investigated.
Address
Corporate Author Thesis
Publisher Place of Publication Washington, D.C. Editor (up)
Language Wos 000294386000037 Publication Date 2011-08-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1932-7447;1932-7455; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 4.536 Times cited 9 Open Access
Notes Approved Most recent IF: 4.536; 2011 IF: 4.805
Call Number UA @ lucian @ c:irua:91714 Serial 1980
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