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“Effect of O2on Plasma-Based Dry Reforming of Methane: Revealing the Optimal Gas Composition via Experiments and Modeling of an Atmospheric Pressure Glow Discharge”. Maerivoet S, Wanten B, De Meyer R, Van Hove M, Van Alphen S, Bogaerts A, ACS Sustainable Chemistry &, Engineering 12, 11419 (2024). http://doi.org/10.1021/acssuschemeng.4c04283
Abstract: Plasma technology is gaining increasing interest for the conversion of greenhouse gases, such as CO2 and CH4, into value-added chemicals using (renewable) electricity. In this paper, we study the effect of O2 addition to the combined conversion of CO2 and CH4 in an atmospheric pressure glow discharge plasma. This process is called “oxidative CO2 reforming of methane”, and we search for the optimal gas mixing ratio in terms of conversion, energy cost, product output and plasma stability. A mixing ratio of 42.5:42.5:15 CO2/CH4/O2 yields the best performance, with a CO2 and CH4 conversion of 50 and 74%, respectively, and an energy cost as low as 2 eV molecule−1 (corresponding to 7.9 kJ L−1 and 190 kJ mol−1), i.e., clearly below the target defined to be competitive with other technologies. The syngas components (CO and H2) are the most important products, with a syngas ratio, H2/CO, being 0.8. Plasma destabilization at high CH4 fractions due to solid carbon formation is the limiting factor for further improving this syngas ratio. The solid carbon material is found to be contaminated with steel particles originating from the electrode material, rendering it unappealing as a side product. Therefore, O2 addition helps to remove the carbon formation. Besides the experiments, we developed a 2D axisymmetric fluid dynamics model, which can successfully predict the experimental trends in conversion, product composition and temperatures, while providing unique insights in the formation of CxHy species.
Keywords: A1 Journal Article; plasma-based conversion, thermal plasma, syngas production, CO2 conversion, CH4 conversio; Plasma, laser ablation and surface modeling Antwerp (PLASMANT) ;
Impact Factor: 8.4
DOI: 10.1021/acssuschemeng.4c04283
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“High field magnetotransport in a Ga0.8In0.2As quantum well with a parallel δ-layer”. van der Burgt M, Karavolas VC, Peeters FM, Singleton J, Nicholas RJ, Herlach F, Harris JJ, van Hove M, Borghs G, , 588 (1995)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“High field transport in high carrier density GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructures”. van der Burgt M, van Esch A, Peeters FM, van Hove M, Borghs G, Herlach F, Physica: B : condensed matter 184, 211 (1993). http://doi.org/10.1016/0921-4526(93)90351-6
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.319
Times cited: 4
DOI: 10.1016/0921-4526(93)90351-6
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“Magneto-oscillations of the gate current in a laterally modulated two-dimensional electron gas”. Blom FAP, Peeters FM, van de Zanden K, van Hove M, Surface science : a journal devoted to the physics and chemistry of interfaces 361/362, 851 (1996). http://doi.org/10.1016/0039-6028(96)00549-3
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.925
Times cited: 1
DOI: 10.1016/0039-6028(96)00549-3
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“Magnetotransport in a pseudomorhic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si δ-doping layer”. van der Burgt M, Karavolas VC, Peeters FM, Singleton J, Nicholas RJ, Herlach F, Harris JJ, van Hove M, Borghs G, Physical review : B : condensed matter and materials physics 52, 12218 (1995)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 35
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“Magnetotransport in a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si \delta-doping layer”. van der Burgt M, Karavolas VC, Peeters FM, Singleton J, Nicholas RJ, Herlach F, Harris JJ, Van Hove M, Borghs G, Physical review : B : condensed matter and materials physics 52, 12218 (1995). http://doi.org/10.1103/PhysRevB.52.12218
Abstract: Magnetotransport properties of a pseudomorphic GsAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T = 1.4 and 4.2 K. The structure studied consists of a Si delta layer parallel to a Ga0.8In0.2As quantum well (QW). The dark electron density of the structure is n(c) = 1.67 x 10(16) m(-2). By illumination the density can be increased up to a factor of 4; this way the second subband in the Ga0.08In0.2As QW can become populated as well as the Si delta layer. The presence of electrons in the delta layer results in drastic changes in the transport data, especially at magnetic fields beyond 30 T. The phenomena observed are interpreted as (i) magnetic freeze-out of carriers in the delta layer when a low density of electrons is present in the delta layer, and (ii) quantization of the electron motion in the two-dimensional electron gases in both the Ga0.8In0.2As QW and the Si delta layer in the case of high densities. These conclusions are corroborated by the numerical results of our theoretical model. We obtain satisfactory agreement between model and experiment.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 43
DOI: 10.1103/PhysRevB.52.12218
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“Reliability of copper dual damascene influenced by pre-clean”. Tokei Z, Lanckmans F, van den Bosch G, Van Hove M, Maex K, Bender H, Hens S, van Landuyt J, Analysis Of Integrated Circuits , 118 (2002). http://doi.org/10.1109/IPFA.2002.1025629
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
Times cited: 5
DOI: 10.1109/IPFA.2002.1025629
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