“Microstructure and interface studies of LaVO3/SrVO3 superlattices”. Boullay P, David A, Sheets WC, Lüders U, Prellier W, Tan H, Verbeeck J, Van Tendeloo G, Gatel C, Vincze G, Radi Z, Physical review : B : condensed matter and materials physics 83, 125403 (2011). http://doi.org/10.1103/PhysRevB.83.125403
Abstract: The structure and interface characteristics of (LaVO3)6m(SrVO3)m superlattices deposited on a (100)-SrTiO3 substrate were studied using transmission electron microscopy (TEM). Cross-section TEM studies revealed that both LaVO3 (LVO) and SrVO3 (SVO) layers are good single-crystal quality and epitaxially grown with respect to the substrate. It is evidenced that LVO layers are made of two orientational variants of a distorted perovskite compatible with bulk LaVO3, while SVO layers suffers from a tetragonal distortion due to the substrate-induced stain. Electron energy loss spectroscopy investigations indicate changes in the fine structure of the V L23 edge, related to a valence change between the LaVO3 and the SrVO3 layers.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 26
DOI: 10.1103/PhysRevB.83.125403
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“Nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures”. Wu S, Luo X, Turner S, Peng H, Lin W, Ding J, David A, Wang B, Van Tendeloo G, Wang J, Wu T;, Physical review X 3, 041027 (2013). http://doi.org/10.1103/PhysRevX.3.041027
Abstract: Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the unconventional bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 12.789
Times cited: 77
DOI: 10.1103/PhysRevX.3.041027
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