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| Author | Hai; Studart; Peeters, F.M. | ||||
| Title | Electron-mobility in 2 coupled delta-layers | Type | A1 Journal article | ||
| Year | 1995 | Publication | Physical review : B : condensed matter and materials physics | Abbreviated Journal | Phys Rev B |
| Volume | 52 | Issue | 15 | Pages | 11273-11276 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | The low-temperature transport properties are studied for electrons confined in delta-doped semiconductor structures with two sheets in parallel. The subband quantum mobility and transport mobility are calculated numerically for the Si delta-doped GaAs systems. The effect of coupling of the two delta layers on the electron transport is investigated. Our calculations are in good agreement with experimental results. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Lancaster, Pa | Editor  |
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| Language | Wos | A1995TA85200092 | Publication Date | 2002-07-27 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0163-1829;1095-3795; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor | 3.736 | Times cited | 25 | Open Access | |
| Notes | Approved | no | |||
| Call Number | UA @ lucian @ c:irua:95343 | Serial | 976 | ||
| Permanent link to this record | |||||
| Author | Hai; Studart; Peeters, F.M. | ||||
| Title | Multisubband electron-transport in delta-doped semiconductor systems | Type | A1 Journal article | ||
| Year | 1995 | Publication | Physical review : B : condensed matter and materials physics | Abbreviated Journal | Phys Rev B |
| Volume | 52 | Issue | 11 | Pages | 8363-8371 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | The electron transport properties in delta-doped semiconductor systems-are studied. The subband electronic structure of the delta-doped system is obtained by solving the coupled Schrodinger and Poisson equations. The screening of the quasi-two-dimensional electron gas is taken into account for the ionized impurity scattering through the matrix dielectric function within the random-phase approximation. The quantum and transport mobilities are calculated numerically as a function of the total electron density and the width of the doped layer at zero temperature. The intersubband scattering and the effect of empty subbands above the Fermi level on the electron mobilities are investigated. The calculated mobilities are in reasonable agreement with the available experimental results. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Lancaster, Pa | Editor |
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| Language | Wos | A1995RV81800091 | Publication Date | 2002-07-27 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0163-1829;1095-3795; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor | 3.736 | Times cited | 67 | Open Access | |
| Notes | Approved | no | |||
| Call Number | UA @ lucian @ c:irua:95353 | Serial | 2243 | ||
| Permanent link to this record | |||||