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“Phase transformations and precipitation in amorphous Ti50Ni25Cu25 ribbons”. Satto C, Ledda A, Potapov P, Janssens JF, Schryvers D, Intermetallics 9, 395 (2001). http://doi.org/10.1016/S0966-9795(01)00015-2
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.14
Times cited: 16
DOI: 10.1016/S0966-9795(01)00015-2
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“The phase transition and crystal structures of Ba3RM2O7.5 complex oxides (R=rare-earth elements, M = Al,Ga)”. Abakumov AM, Shpanchenko RV, Lebedev OI, Van Tendeloo G, Amelinckx S, Antipov EV, Acta crystallographica: section A: foundations of crystallography 55, 828 (1999). http://doi.org/10.1107/S0108767399002068
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 5.725
Times cited: 7
DOI: 10.1107/S0108767399002068
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“Phase transition and magnetic anisotropy of (La,Sr)MnO3 thin films”. Wang Z-H, Kronmüller H, Lebedev OI, Gross GM, Razavi FS, Habermeier HU, Shen BG, Physical review : B : condensed matter and materials physics 65, 054411 (2002). http://doi.org/10.1103/PhysRevB.65.054411
Abstract: The magnetic proper-ties and their correlation with the microstructure and electrical transport are investigated in La0.88Sr0.1MnO3 films grown on (100)SrTiO3 Single crystal substrates with thickness ranging from 100 to 2500 Angstrom. The ultrathin film (t = 100 Angstrom) has a single ferromagnetic transition (FMT) at T-c of 250 K, whereas the thicker films exhibit two FMTs, with the main one at a lowered T-c of 200 K while the minor one around 300 K. Furthermore, a thickness dependent magnetic anisotropy has been found, strongly indicating the existence of strain effect, which is also revealed by the transmission electron microscopy study. The suppressed Jahn-Teller distortion (JTD) by the epitaxial strain, and the recovered JTD due to the strain relexation are suggested to explain the metallic behavior in thin films and the insulating behavior in the thick film (t = 2500 Angstrom), repectively.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 23
DOI: 10.1103/PhysRevB.65.054411
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“Phase transitions: an alternative for stress accommodation in CMR manganate films”. Lebedev OI, Van Tendeloo G, Zeitschrift für Metallkunde 95, 244 (2004). http://doi.org/10.3139/146.017943
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
DOI: 10.3139/146.017943
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“Phase transitions in C60 and the related microstructure: a study by electron diffraction and electron microscopy”. Van Tendeloo G, van Heurck C, van Landuyt J, Amelinckx S, Verheijen MA, van Loosdrecht PHM, Meijer G, Journal of physical chemistry 96, 7424 (1992). http://doi.org/10.1021/j100197a054
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 33
DOI: 10.1021/j100197a054
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“Phase transitions in AC60 (A=Rb, Cs) fullerides”. Nikolaev AV, Prassides K, Michel KH, Recent advances in the chemistry and physics of fullerenes and related materials 5, 450 (1997)
Keywords: A3 Journal article; Condensed Matter Theory (CMT)
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“Phase transitions in K3AlF6”. Abakumov AM, Rossell MD, Alekseeva AM, Vassiliev SY, Mudrezova SN, Van Tendeloo G, Antipov EV, Journal of solid state chemistry 179, 421 (2006). http://doi.org/10.1016/j.jssc.2005.10.044
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 18
DOI: 10.1016/j.jssc.2005.10.044
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“Phase transitions in thin mesoscopic superconducting disks”. Schweigert VA, Peeters FM, Physical review : B : condensed matter and materials physics 57, 13817 (1998). http://doi.org/10.1103/PhysRevB.57.13817
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 200
DOI: 10.1103/PhysRevB.57.13817
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“Phonon-assisted Zener tunneling in a cylindrical nanowire transistor”. Carrillo-Nuñez H, Magnus W, Vandenberghe WG, Sorée B, Peeters FM, Journal of applied physics 113, 184507 (2013). http://doi.org/10.1063/1.4803715
Abstract: The tunneling current has been computed for a cylindrical nanowire tunneling field-effect transistor (TFET) with an all-round gate that covers the source region. Being the underlying mechanism, band-to-band tunneling, mediated by electron-phonon interaction, is pronouncedly affected by carrier confinement in the radial direction and, therefore, involves the self-consistent solution of the Schrodinger and Poisson equations. The latter has been accomplished by exploiting a non-linear variational principle within the framework of the modified local density approximation taking into account the nonparabolicity of both the valence band and conduction band in relatively thick wires. Moreover, while the effective-mass approximation might still provide a reasonable description of the conduction band in relatively thick wires, we have found that the nonparabolicity of the valence band needs to be included. As a major conclusion, it is observed that confinement effects in nanowire tunneling field-effect transistors have a stronger impact on the onset voltage of the tunneling current in comparison with planar TFETs. On the other hand, the value of the onset voltage is found to be overestimated when the valence band nonparabolicity is ignored. (C) 2013 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 4
DOI: 10.1063/1.4803715
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“Phonon-assisted Zener tunneling in a p-n diode silicon nanowire”. Carrillo-Nunez H, Magnus W, Vandenberghe WG, Sorée B, Peeters FM, Solid state electronics 79, 196 (2013). http://doi.org/10.1016/j.sse.2012.09.004
Abstract: The Zener tunneling current flowing through a biased, abrupt p-n junction embedded in a cylindrical silicon nanowire is calculated. As the band gap becomes indirect for sufficiently thick wires, Zener tunneling and its related transitions between the valence and conduction bands are mediated by short-wavelength phonons interacting with mobile electrons. Therefore, not only the high electric field governing the electrons in the space-charge region but also the transverse acoustic (TA) and transverse optical (TO) phonons have to be incorporated in the expression for the tunneling current. The latter is also affected by carrier confinement in the radial direction and therefore we have solved the Schrodinger and Poisson equations self-consistently within the effective mass approximation for both conduction and valence band electrons. We predict that the tunneling current exhibits a pronounced dependence on the wire radius, particularly in the high-bias regime. (C) 2012 Elsevier Ltd. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.58
Times cited: 2
DOI: 10.1016/j.sse.2012.09.004
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“Phonon band structure of Si nanowires: a stability analysis”. Peelaers H, Partoens B, Peeters FM, Nano letters 9, 107 (2009). http://doi.org/10.1021/nl802613p
Abstract: We present full ab initio calculations of the phonon band structure of thin Si nanowires oriented along the [110] direction. Using these phonon dispersion relations, we investigate the structural stability of these wires. We found that all studied wires were stable also when doped with either B or P, if the unit cell was taken sufficiently large along the wire axis. The evolution of the phonon dispersion relations and of the sound velocities with respect to the wire diameters is discussed. Softening is observed for acoustic modes and hardening for optical phonon modes with increasing wire diameters.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 12.712
Times cited: 51
DOI: 10.1021/nl802613p
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“Phonon band structures of Si nanowires”. Peelaers H, Partoens B, Peeters FM, AIP conference proceedings 1199, 323 (2009). http://doi.org/10.1063/1.3295432
Abstract: We present full ab initio calculations of the phonon band structure of thin Si nanowires oriented along the [110] direction. Using these phonon dispersion relations we investigate the structural stability of these wires. We found that all studied wires were stable also when doped with either B or P, if the unit cell was taken sufficiently large along the wire axis. The evolution of the phonon dispersion relations and of the sound velocities with respect to the wire diameters is discussed. Softening is observed for acoustic modes and hardening for optical phonon modes with increasing wire diameters.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
DOI: 10.1063/1.3295432
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“Phonon dispersions and piezoelectricity in bulk and multilayers of hexagonal boron nitride”. Michel KH, Verberck B, Physical review : B : condensed matter and materials physics 83, 115328 (2011). http://doi.org/10.1103/PhysRevB.83.115328
Abstract: A unified theory of phonon dispersions and piezoelectricity in bulk and multilayers of hexagonal boron nitride (h-BN) is derived. The dynamical matrix is calculated on the basis of an empirical force constant model of intralayer valence and interlayer van der Waals interactions. Coulomb interactions are calculated by Ewalds method, adapted for the three-dimensional (3D) and the multilayer case. The deformation of the ionic charge distribution with long-wave lattice displacements is taken into account. Special attention is devoted to the nonanalytic long-range Coulomb contribution to the dynamical matrix which is different for the 3D crystal and the multilayer case. Consequently there is a splitting of the transverse optical (TO) and longitudinal optical (LO) phonon branches of E1u symmetry and a discontinuity of the A2u branch at the Γ point in 3D h-BN. No such splitting and discontinuity at Γ are present in multilayer crystals with a finite number N of layers. There a diverging bundle of N overbending optical phonon branches emerges from Γ. Borns long-wave theory is applied and extended for the study of piezoelectricity in layered crystals. While 3D h-BN and h-BN multilayers with an even number of layers (symmetry D6h) are not piezoelectric, multilayers with an uneven number of Nu layers (symmetry D3h) are piezoelectric; the piezoelectric coefficient e1,11 is inversely proportional to Nu.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 82
DOI: 10.1103/PhysRevB.83.115328
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“Phonon-induced pure dephasing in exciton-biexciton quantum dot systems driven by ultrafast laser pulse sequences”. Axt VM, Kuhn T, Vagov A, Peeters FM, Physical review : B : condensed matter and materials physics 72, 125309 (2005). http://doi.org/10.1103/PhysRevB.72.125309
Abstract: A semiconductor quantum dot model accounting for single exciton as well as biexciton states coupled to phonons and laser light is investigated in the limit of strong electronic confinement. For an arbitrary sequence of excitations with ultrafast pulses analytical solutions are obtained for all density-matrix elements. The results are nonperturbative with respect to both the carrier-phonon and the carrier-light coupling. Numerical results for a single pulse excitation are presented illustrating spectral features of our solution as well as pulse area and temperature dependences.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 48
DOI: 10.1103/PhysRevB.72.125309
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“Phonon softening and direct to indirect band gap crossover in strained single-layer MoSe2”. Horzum S, Sahin H, Cahangirov S, Cudazzo P, Rubio A, Serin T, Peeters FM, Physical review : B : condensed matter and materials physics 87, 125415 (2013). http://doi.org/10.1103/PhysRevB.87.125415
Abstract: Motivated by recent experimental observations of Tongay et al. [Nano Lett. 12, 5576 (2012)] we show how the electronic properties and Raman characteristics of single layer MoSe2 are affected by elastic biaxial strain. We found that with increasing strain: (1) the E' and E '' Raman peaks (E-2g and E-1g in bulk) exhibit significant redshifts (up to similar to 30 cm(-1)), (2) the position of the A'(1) peak remains at similar to 180 cm(-1) (A(1g) in bulk) and does not change considerably with further strain, (3) the dispersion of low energy flexural phonons crosses over from quadratic to linear, and (4) the electronic band structure undergoes a direct to indirect band gap crossover under similar to 3% biaxial tensile strain. Thus the application of strain appears to be a promising approach for a rapid and reversible tuning of the electronic, vibrational, and optical properties of single layer MoSe2 and similar MX2 dichalcogenides. DOI:10.1103/PhysRevB.87.125415
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 171
DOI: 10.1103/PhysRevB.87.125415
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“Phonons in Ge nanowires”. Peelaers H, Partoens B, Peeters FM, Applied physics letters 95, 122110 (2009). http://doi.org/10.1063/1.3236526
Abstract: The phonon spectra of thin freestanding, hydrogen passivated, Ge nanowires are calculated by ab initio techniques. The effect of confinement on the phonon modes as caused by the small diameters of the wires is investigated. Confinement causes a hardening of the optical modes and a softening of the longitudinal acoustic modes. The stability of the nanowires, undoped or doped with B or P atoms, is investigated using the obtained phonon spectra. All considered wires were stable, except for highly doped, very thin nanowires.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 12
DOI: 10.1063/1.3236526
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“Photo-excited carriers and optical conductance and transmission in graphene in the presence of phonon scattering”. Dong HM, Xu W, Zhang J, Peeters FM, Vasilopoulos P, Physica. E: Low-dimensional systems and nanostructures 42, 748 (2010). http://doi.org/10.1016/j.physe.2009.11.048
Abstract: We present a theoretical study of the optoelectronic properties of monolayer graphene. Including the effect of the electron-photon-phonon scattering, we employ the mass- and energy-balance equations derived from the Boltzmann equation to evaluate self-consistently the carrier densities, optical conductance and transmission coefficient in graphene in the presence of linearly polarized radiation field. We find that the photo-excited carrier density can be increased under infrared radiation and depend strongly on radiation intensity and frequency. For short wavelengths (lambda <3 mu m), the universal optical conductance sigma(0) = e(2)/4h is obtained and the light transmittance is about 0.97-0.98. Interestingly, there is an optical absorption window in the range 4-100 mu m which is induced by different transition energies required for inter- and intra-band optical absorption. The position and width of this absorption window depend sensitively on temperature and carrier density of the system. These results are relevant for applications of recently developed graphene devices in advanced optoelectronics such as the infrared photodetectors. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 2.221
Times cited: 7
DOI: 10.1016/j.physe.2009.11.048
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“Photocatalytic process optimisation for ethylene oxidation”. Tytgat T, Hauchecorne B, Abakumov AM, Smits M, Verbruggen SW, Lenaerts S, Chemical engineering journal 209, 494 (2012). http://doi.org/10.1016/j.cej.2012.08.032
Abstract: When studying photocatalysis it is important to consider, beside the chemical approach, the engineering part related to process optimisation. To achieve this a fixed bed photocatalytic set-up consisting of different catalyst placings, in order to vary catalyst distribution, is studied. The use of a fixed quantity of catalyst placed packed or randomly distributed in the reactor, results in an almost double degradation for the distributed catalyst. Applying this knowledge leads to an improved performance with limited use of catalyst. A reactor only half filled with catalyst leads to higher degradation performance compared to a completely filled reactor. Taking into account this simple process optimisation by better distributing the catalyst a more sustainable photocatalytic air purification process is achieved. (C) 2012 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Sustainable Energy, Air and Water Technology (DuEL)
Impact Factor: 6.216
Times cited: 12
DOI: 10.1016/j.cej.2012.08.032
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“Photoconductivity of nanocrystalline SnO2 sensitized with colloidal CdSe quantum dots”. Vasiliev RB, Babynina AV, Maslova OA, Rumyantseva MN, Ryabova LI, Dobrovolsky AA, Drozdov KA, Khokhlov DR, Abakumov AM, Gaskov AM, Journal of materials chemistry C : materials for optical and electronic devices 1, 1005 (2013). http://doi.org/10.1039/c2tc00236a
Abstract: A highly reproducible photoresponse is observed in nanocrystalline SnO2 thick films sensitized with CdSe quantum dots. The effect of the SnO2 matrix microstructure on the photoconductivity kinetics and photoresponse amplitude is demonstrated. The photoresponse of the sensitized SnO2 thick films reaches more than two orders of magnitude under illumination with the wavelength of the excitonic transition of the quantum dots. Long-term photoconductivity kinetics and photoresponse dependence on illumination intensity reveal power-law behavior inherent to the disordered nature of SnO2. The photoconductivity of the samples rises with the coarsening of the granular structure of the SnO2 matrix. At the saturation region, the photoresponse amplitude remains stable under 10(4) pulses of illumination switching, demonstrating a remarkably high stability.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 5.256
Times cited: 13
DOI: 10.1039/c2tc00236a
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“Photoelectric and electrical responses of several erbium silicide/silicon interfaces”. Muret P, Nguyen TTA, Frangis N, Van Tendeloo G, van Landuyt J, Applied surface science
T2 –, International Symposium on Si Heterostructures –, From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE 102, 173 (1996). http://doi.org/10.1016/0169-4332(96)00042-6
Abstract: In this work, photoelectric yield and electrical properties of several types of epitaxial erbium silicide on silicon Schottky diodes are studied, Different preparation conditions are used simultaneously on n- and p-Si(111) substrates for the 200 Angstrom thick silicide films. A last type of sample consists in 1.3 monolayer of epitaxial silicide with root 3 X root 3 superstructure on the Si substrate and covered by silver on the top. Photocurrent measurements are done as a function of photon energy at several temperatures. All these samples show barrier heights near 1 eV on p-type Si, even for the interface comprising only 1.3 monolayer of silicide whereas barrier heights on n-rype Si span the range from 0.28 to 0.67 eV for this last kind of sample, the sum of the barriers always exceeding the silicon band gap, These photoelectric results are confirmed by electrical characterisations, All these results show that the Fermi level is pinned 0.1 eV below the conduction band edge on p-type Si but shifts to various positions lower within the band gap on n-type Si. This fact leads to the hypothesis of a density of -7 interface states close to the charge change in the Si depletion zone from p- to n-type, namely 10(12) eV(-1) cm(-2). Although some inhomogeneities and defects at the interface are detected by electron microscopy for samples annealed at 750 degrees C, Fermi level position seems rather insensitive to the structural details of the interface while the silicide thickness plays a role on n-type Si.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.711
Times cited: 3
DOI: 10.1016/0169-4332(96)00042-6
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“Photoemission study of CF4 rf-plasma treated multi-wall carbon nanotubes”. Felten A, Ghijsen J, Pireaux J-J, Whelan CM, Liang D, Van Tendeloo G, Bittencourt C, Carbon 46, 1271 (2008). http://doi.org/10.1016/j.carbon.2008.04.027
Abstract: Multi-wall carbon nanotubes (MWCNTs) were exposed to a CF4 rf-plasma. X-ray photoelectron spectroscopy analysis shows that the treatment effectively grafts fluorine atoms onto the MWCNTs. The fluorine atomic concentration and the nature of the CF bond (semi-ionic or covalent) can be tuned by varying the exposure time. Ultraviolet photoelectron spectroscopy analysis confirms that the valence electronic states are altered by the grafting of fluorine atoms. Characterization with high-resolution transmission electron microscopy reveals that while the plasma treatment does not induce significant etching impact on the CNT-surface, it does increase the number of active sites for gold cluster formation.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 6.337
Times cited: 21
DOI: 10.1016/j.carbon.2008.04.027
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“Photographic materials”. Verlinden G, Gijbels R, Geuens I Surface Spectra IM, Chichester, page 727 (2001).
Keywords: H3 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Photoluminescence of negatively charged excitons in high magnetic fields”. Hayne M, Jones CL, Bogaerts R, Riva C, Usher A, Peeters FM, Herlach F, Moshchalkov VV, Henini M, Physical review : B : condensed matter and materials physics 59, 2927 (1999). http://doi.org/10.1103/PhysRevB.59.2927
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 86
DOI: 10.1103/PhysRevB.59.2927
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“Photovoltaic effect and evidence of carrier multiplication in graphene vertical homojunctions with asymmetrical metal contacts”. Chen JJ, Wang Q, Meng J, Ke X, Van Tendeloo G, Bie YQ, Liu J, Liu K, Liao ZM, Sun D, Yu D;, ACS nano 9, 8851 (2015). http://doi.org/10.1021/acsnano.5b02356
Abstract: Graphene exhibits exciting potentials for high-speed wideband photodetection and high quantum efficiency solar energy harvest because of its broad spectral absorption, fast photoelectric response, and potential carrier multiplication. Although photocurrent can be generated near a metalgraphene interface in lateral devices, the photoactive area is usually limited to a tiny one-dimensional line-like interface region. Here, we report photoelectric devices based on vertical graphene two-dimensional homojunction, which is fabricated via vertically stacking four graphene monolayers with asymmetric metal contacts. The devices show excellent photovoltaic output with excitation wavelength ranging from visible light to mid-infrared. The wavelength dependence of the internal quantum efficiency gives direct evidence of the carrier multiplication effect in graphene. The simple fabrication process, easy scale-up, large photoresponsive active area, and broadband response of the vertical graphene device are very promising for practical applications in optoelectronics and photovoltaics.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 13.942
Times cited: 11
DOI: 10.1021/acsnano.5b02356
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“Physical limits on atomic resolution”. van Dyck D, Van Aert S, den Dekker AJ, Microscopy and microanalysis 10, 153 (2004). http://doi.org/10.1017/S143192760404036X
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 1.891
Times cited: 14
DOI: 10.1017/S143192760404036X
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“Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers”. Zhang Y, Fischetti MV, Sorée B, Magnus W, Heyns M, Meuris M, Journal of applied physics 106, 083704 (2009). http://doi.org/10.1063/1.3245327
Abstract: We present comprehensive calculations of the low-field hole mobility in Ge p-channel inversion layers with SiO2 insulator using a six-band k·p band-structure model. The cases of relaxed, biaxially, and uniaxially (both tensily and compressively) strained Ge are studied employing an efficient self-consistent methodmaking use of a nonuniform spatial mesh and of the Broyden second methodto solve the coupled envelope-wave function k·p and Poisson equations. The hole mobility is computed using the KuboGreenwood formalism accounting for nonpolar hole-phonon scattering and scattering with interfacial roughness. Different approximations to handle dielectric screening are also investigated. As our main result, we find a large enhancement (up to a factor of 10 with respect to Si) of the mobility in the case of uniaxial compressive stress similarly to the well-known case of Si. Comparison with experimental data shows overall qualitative agreement but with significant deviations due mainly to the unknown morphology of the rough Ge-insulator interface, to additional scattering with surface optical phonon from the high- insulator, to Coulomb scattering interface traps or oxide chargesignored in our calculationsand to different channel structures employed.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 29
DOI: 10.1063/1.3245327
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“Physicochemical and structural characterization of mesoporous aluminosilicates synthesized from leached saponite with additional aluminum incorporation”. Linssen T, Cassiers K, Cool P, Lebedev O, Whittaker A, Vansant EF, Chemistry of materials 15, 4863 (2003). http://doi.org/10.1021/cm031111a
Abstract: A thorough investigation was performed on the physical (mechanical, thermal, and hydrothermal stability) and chemical (ion exchange capacity and silanol number) characteristics of aluminosilicate FSMs, synthesized via a new successful short-time synthesis route using leached saponite and a low concentration of CTAB. Moreover, the influence of an additional Al incorporation, utilizing different aluminum sources, on the structure of the FSM derived from saponite is studied. A mesoporous aluminosilicate with a low Si/Al ratio of 12.8 is synthesized, and still has a very large surface area of 1130 m(2)/g and pore volume of 0.92 cm(3)/g. The aluminum-containing samples all have a high cation exchange capacity of around 1 mmol/9 while they still have a silanol number of about 0.9 OH/nm(2); both characteristics being interesting for high-yield postsynthesis modification reactions. Finally, a study is performed on the transformation of the aluminosilicates into their Bronsted acid form via the exchange with ammonium ions and a consecutive heat treatment.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA)
Impact Factor: 9.466
Times cited: 11
DOI: 10.1021/cm031111a
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“Physics of generation and detection of signals used for microcharacterization”. Remond G, Gijbels R, Levenson LL, Shimizu R Scanning Microscopy International, Chicago, Ill. (1994).
Keywords: ME3 Book as editor; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“PIC-MC simulation of an RF capacitively coupled Ar/H2 discharge”. Neyts E, Yan M, Bogaerts A, Gijbels R, Nuclear instruments and methods in physics research: B 202, 300 (2003). http://doi.org/10.1016/S0168-583X(02)01873-6
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.109
Times cited: 8
DOI: 10.1016/S0168-583X(02)01873-6
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“PIC –, MCC numerical simulation of a DC planar magnetron”. Kolev I, Bogaerts A, Plasma processes and polymers 3, 127 (2006). http://doi.org/10.1002/ppap.200500118
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.846
Times cited: 27
DOI: 10.1002/ppap.200500118
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