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“High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers”. Germain M, Leys M, Boeykens S, Degroote S, Wang W, Schreurs D, Ruythooren W, Choi K-H, van Daele B, Van Tendeloo G, Borghs G, Materials Research Society symposium proceedings 798, Y10.22 (2004)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“High energy transitions and phonon-assisted harmonics of a shallow magneto-donor in GaAs/AlGaAs multiple quantum wells”. Bruno-Alfonso A, Hai G-Q, Peeters FM, Yeo T, Ryu SR, McCombe BD, , 1413 (2001)
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
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“High energy transitions of shallow magneto-donors in a GaAs/Al0.3Ga0.7As multiple quantum well”. Bruno-Alfonso A, Hai G-Q, Peeters FM, Yeo T, Ryu SR, McCombe BD, Journal of physics : condensed matter 13, 9761 (2001). http://doi.org/10.1088/0953-8984/13/43/307
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.649
Times cited: 7
DOI: 10.1088/0953-8984/13/43/307
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“High-field cyclotron resonance and electron-phonon interaction in modulation-doped multiple quantum well structures”. Wang YJ, Jiang ZX, McCombe BD, Peeters FM, Wu XG, Hai GQ, Eusfis TJ, Schaff W, Physica: B : condensed matter 256/258, 215 (1998). http://doi.org/10.1016/S0921-4526(98)00572-9
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.386
Times cited: 5
DOI: 10.1016/S0921-4526(98)00572-9
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“High-field magneto-resistance in GaAs-GaAlAs heterojunctions”. Leadley DR, Nicholas RJ, Xu W, Peeters FM, Devreese JT, Foxon CT, Harris JJ, Physica: B : condensed matter 184, 197 (1993). http://doi.org/10.1016/0921-4526(93)90348-A
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 1.319
Times cited: 4
DOI: 10.1016/0921-4526(93)90348-A
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“High-field magnetoexcitons in unstrained GaAs/AlxGa1-xAs quantum dots”. Sidor Y, Partoens B, Peeters FM, Schildermans N, Hayne M, Moshchalkov VV, Rastelli A, Schmidt OG, Physical review : B : condensed matter and materials physics 73, 155334 (2006). http://doi.org/10.1103/PhysRevB.73.155334
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 50
DOI: 10.1103/PhysRevB.73.155334
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“High-field magnetoresistance in GaAs/Ga0.7Al0.3As heterojunctions arising from elastic and inelastic scattering”. Leadley DR, Nicholas RJ, Xu W, Peeters FM, Devreese JT, Singleton J, Perenboom JA, van Bockstal L, Herlach F, Foxon CT, Harris JJ, Physical review : B : condensed matter and materials physics 48, 5457 (1993). http://doi.org/10.1103/PhysRevB.48.5457
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 22
DOI: 10.1103/PhysRevB.48.5457
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“High field magnetotransport in a Ga0.8In0.2As quantum well with a parallel δ-layer”. van der Burgt M, Karavolas VC, Peeters FM, Singleton J, Nicholas RJ, Herlach F, Harris JJ, van Hove M, Borghs G, , 588 (1995)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“High field transport in high carrier density GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructures”. van der Burgt M, van Esch A, Peeters FM, van Hove M, Borghs G, Herlach F, Physica: B : condensed matter 184, 211 (1993). http://doi.org/10.1016/0921-4526(93)90351-6
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.319
Times cited: 4
DOI: 10.1016/0921-4526(93)90351-6
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“High-field transport properties of graphene”. Dong HM, Xu W, Peeters FM, Journal of applied physics 110, 063704 (2011). http://doi.org/10.1063/1.3633771
Abstract: We present a theoretical investigation on the transport properties of graphene in the presence of high dc driving fields. Considering electron interactions with impurities and acoustic and optical phonons in graphene, we employ the momentum- and energy-balance equations derived from the Boltzmann equation to self-consistently evaluate the drift velocity and temperature of electrons in graphene in the linear and nonlinear response regimes. We find that the current-voltage relation exhibits distinctly nonlinear behavior, especially in the high electric field regime. Under the action of high-fields the large source-drain (sd) current density can be achieved and the current saturation in graphene is incomplete with increasing the sd voltage Vsd up to 3 V. Moreover, for high fields, Vsd>0.1 V, the heating of electrons in graphene occurs. It is shown that the sd current and electron temperature are sensitive to electron density and lattice temperature in the graphene device. This study is relevant to the application of graphene as high-field nano-electronic devices such as graphene field-effect transistors.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 17
DOI: 10.1063/1.3633771
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“High magnetic ordering temperature in the perovskites Sr4-xLaxFe3ReO12 (x=0.0, 1.0, 2.0)”. Retuerto M, Li MR, Go YB, Ignatov A, Croft M, Ramanujachary KV, Herber RH, Nowik I, Hodges JP, Dachraoui W, Hadermann J, Greenblatt M;, Journal of solid state chemistry 194, 48 (2012). http://doi.org/10.1016/j.jssc.2012.06.031
Abstract: A series of perovskites Sr4−xLaxFe3ReO12 (x=0.0, 1.0, 2.0) has been prepared by wet chemistry methods. The structure analyses by powder X-ray and neutron diffraction and electron microscopy show that these compounds adopt simple perovskite structures without cation ordering over the B sites: tetragonal (I4/mcm) for x=0.0 and 1.0 and orthorhombic (Pbmn) for x=2.0. The oxidation states of the cations in the compound with x=0.0 appear to be Fe3+/4+ and Re7+ and decrease for both with La substitution as evidenced by X-ray absorption spectroscopy. All the compounds are antiferromagnetically ordered above room temperature, as demonstrated by Mössbauer spectroscopy and the magnetic structures, which were determined by powder neutron diffraction. The substitution of Sr by La strongly affects the magnetic properties with an increase of TN up to ∼750 K.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 9
DOI: 10.1016/j.jssc.2012.06.031
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“High-mobility Bi2Se3 nanoplates manifesting quantum oscillations of surface states in the sidewalls”. Yan Y, Wang L-X, Ke X, Van Tendeloo G, Wu X-S, Yu D-P, Liao Z-M, Scientific reports 4, 3817 (2014). http://doi.org/10.1038/srep03817
Abstract: Magnetotransport measurements of topological insulators are very important to reveal the exotic topological surface states for spintronic applications. However, the novel properties related to the surface Dirac fermions are usually accompanied by a large linear magnetoresistance under perpendicular magnetic field, which makes the identification of the surface states obscure. Here, we report prominent Shubnikov-de Haas (SdH) oscillations under an in-plane magnetic field, which are identified to originate from the surface states in the sidewalls of topological insulator Bi2Se3 nanoplates. Importantly, the SdH oscillations appear with a dramatically weakened magnetoresistance background, offering an easy path to probe the surface states directly when the coexistence of surface states and bulk conduction is inevitable. Moreover, under a perpendicular magnetic field, the oscillations in Hall conductivity have peak-to-valley amplitudes of 2 e(2)/h, giving confidence to achieve a quantum Hall effect in this system. A cross-section view of the nanoplate shows that the sidewall is (015) facet dominant and therefore forms a 586 angle with regard to the top/ bottom surface instead of being perpendicular; this gives credit to the surface states' behavior as two-dimensional transport.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 4.259
Times cited: 31
DOI: 10.1038/srep03817
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“High precision determination of the elastic strain of InGaN/GaN multiple quantum wells”. Wu MF, Zhou S, Yao S, Zhao Q, Vantomme A, van Daele B, Piscopiello E, Van Tendeloo G, Tong YZ, Yang ZJ, Yu TJ, Zhang GY, Journal of vacuum science and technology: B: microelectronics and nanometer structures 22, 920 (2004). http://doi.org/10.1116/1.1715085
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 15
DOI: 10.1116/1.1715085
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“High pulse area undamping of Rabi oscillations in quantum dots coupled to phonons”. Vagov A, Croitoru MD, Axt VM, Kuhn T, Peeters FM, Physica status solidi B –, Basic solid state physics 243, 2233 (2006). http://doi.org/10.1002/pssb.200668029
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 1.674
Times cited: 16
DOI: 10.1002/pssb.200668029
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“High reflective mirrors for in-vessel applications in ITER”. Razdobarin AG, Mukhin EE, Semenov VV, YuTolstyakov S, Kochergin MM, Kurskiev GS, Podushnikova KA, Kirilenko DA, Sitnikova AA, Gorodetsky АЕ, Bukhovets VL, Zalavutdinov RK, Zakharov АP, Arkhipov II, Voitsenya VS, Bondarenko VN, Konovalov VG, Ryzhkov IV;, Nuclear instruments and methods in physics research : A: accelerators, spectrometers, detectors and associated equipment 623, 809 (2010). http://doi.org/10.1016/j.nima.2010.04.047
Abstract: The structure and surface morphology of aluminum and silver mirrors covered with protective dielectric oxide layer were studied by means of TEM and SEM. The presence of needle-like pores throughout the thickness of the ZrO(2) film and bubble-like pores in Al(2)O(3) was observed. The test for resistivity to deuterium ion bombardment shows that the exposition to a fluence of similar to 2 x 10(20) ions/cm(2) with the ion energy of 40-50 eV results in appearance of blisters on the surface of mirrors covered wit h Al(2)O(3). For the mirrors protected with ZrO(2) no noticeable changes in surface morphology and reflectivity were found even after order of magnitude higher ion fluence. The effect of different porous structures on blistering phenomena is discussed. (C) 2010 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.362
Times cited: 4
DOI: 10.1016/j.nima.2010.04.047
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“High resolution electron microscopic study of Ba7Sc6Al2O19 and related phases”. Shpanchenko RV, Nistor L, Van Tendeloo G, Amelinckx S, Antipov EV, Kovba LM, Journal of solid state chemistry 113, 193 (1994). http://doi.org/10.1006/jssc.1994.1359
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.133
Times cited: 3
DOI: 10.1006/jssc.1994.1359
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“High-resolution electron microscopy and electron energy-loss spectroscopy of giant palladium clusters”. Oleshko V, Volkov V, Gijbels R, Jacob W, Vargaftik M, Moiseev I, Van Tendeloo G, Zeitschrift für Physik : D : atoms, molecules and clusters 34, 283 (1995). http://doi.org/10.1007/BF01437574
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT); Electron microscopy for materials research (EMAT)
Times cited: 22
DOI: 10.1007/BF01437574
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“High-resolution electron microscopy observations of large Pd clusters”. Volkov VV, Van Tendeloo G, Vargaftik MN, Moiseev II, Journal of crystal growth 132, 359 (1993). http://doi.org/10.1016/0022-0248(93)90059-6
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.698
Times cited: 7
DOI: 10.1016/0022-0248(93)90059-6
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“High resolution electron microscopy study of molecular beam epitaxy grown CoSi2/Si1-xGex/Si(100) heterostructurs”. Buschmann V, Rodewald M, Fuess H, Van Tendeloo G, Schäffer C, Journal of applied physics 85, 2119 (1999). http://doi.org/10.1063/1.369512
Abstract: Two CoSi2/Si1-xGex/Si(100) heterostructures, with different Ge content, made by molecular beam epitaxy are characterized by high resolution electron microscopy. In general, the interface between the CoSi2 thin film and the Si1-xGex layer is of a high structural quality and the strained Si1-xGex layer exhibits few defects. For both samples, different interface structures are present, although the dominant interfacial configuration is similar to the unreconstructed interface present at the CoSi2/Si(100) interface. Only occasionally (2x1) reconstructed interface regions are found which are just a few nanometers in length. Phenomena such as Ge segregation and the introduction of defects are also observed in the Si1-xGex layer. We attribute the minimal presence of the reconstructed interface to both the (2x8):Si1-xGex(100) surface reconstruction and the Ge segregation that takes place. (C) 1999 American Institute of Physics. [S0021-8979(99)02104-0].
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 6
DOI: 10.1063/1.369512
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“High-resolution electron microscopy study of strained epitaxial La0.7Sr0.3MnO3 thin films”. Lebedev OI, Van Tendeloo G, Amelinckx S, Ju HL, Krishnan KM, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 80, 673 (2000). http://doi.org/10.1080/01418610008212075
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 52
DOI: 10.1080/01418610008212075
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“High resolution transmission electron microscopy study of nanoscale Ni-rich Ni-Al films evaporated onto NaCl and KCl”. Yandouzi M, Toth L, Schryvers D, Nanostructured materials 10, 99 (1998). http://doi.org/10.1016/S0965-9773(98)00025-7
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
DOI: 10.1016/S0965-9773(98)00025-7
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“High strength-ductility of thin nanocrystalline palladium films with nanoscale twins : on-chip testing and grain aggregate model”. Colla M-S, Wang B, Idrissi H, Schryvers D, Raskin J-P, Pardoen T, Acta materialia 60, 1795 (2012). http://doi.org/10.1016/j.actamat.2011.11.054
Abstract: The mechanical behaviour of thin nanocrystalline palladium films with an ∼30 nm in plane grain size has been characterized on chip under uniaxial tension. The films exhibit a large strain hardening capacity and a significant increase in the strength with decreasing thickness. Transmission electron microscopy has revealed the presence of a moderate density of growth nanotwins interacting with dislocations. A semi-analytical grain aggregate model is proposed to investigate the impact of different contributions to the flow behaviour, involving the effect of twins, of grain size and of the presence of a thin surface layer. This model provides guidelines to optimizing the strength/ductility ratio of the films.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 5.301
Times cited: 38
DOI: 10.1016/j.actamat.2011.11.054
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“High-temperature conductance of a two-dimensional superlattice controlled by spin-orbit interaction”. Földi P, Szaszkó-Bogár V, Peeters FM, Physical review : B : condensed matter and materials physics 83, 115313 (2011). http://doi.org/10.1103/PhysRevB.83.115313
Abstract: Rashba-type spin-orbit interaction (SOI) controlled band structure of a two-dimensional superlattice allows for the modulation of the conductance of finite size devices by changing the strength of the SOI. We consider rectangular arrays and find that the temperature dependence of the conductance disappears for high temperatures, but the strength of the SOI still affects the conductance at these temperatures. The modulation effect can be seen even in the presence of strong dephasing, which can be important for practical applications.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 8
DOI: 10.1103/PhysRevB.83.115313
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“The high-temperature polymorphs of K3AlF6”. King G, Abakumov AM, Woodward PM, Llobet A, Tsirlin AA, Batuk D, Antipov EV, Inorganic chemistry 50, 7792 (2011). http://doi.org/10.1021/ic200956a
Abstract: The crystal structures of the three high-temperature polymorphs of K3AlF6 have been solved from neutron powder diffraction, synchrotron X-ray powder diffraction, and electron diffraction data. The β-phase (stable between 132 and 153 °C) and γ-phase (stable between 153 to 306 °C) can be described as unusually complex superstructures of the double-perovskite structure (K2KAlF6) which result from noncooperative tilting of the AlF6 octahedra. The β-phase is tetragonal, space group I4/m, with lattice parameters of a = 13.3862(5) Å and c = 8.5617(3) Å (at 143 °C) and Z = 10. In this phase, one-fifth of the AlF6 octahedra are rotated about the c-axis by 45° while the other four-fifths remain untilted. The large 45° rotations result in edge sharing between these AlF6 octahedra and the neighboring K-centered polyhedra, resulting in pentagonal bipyramidal coordination for four-fifths of the K+ ions that reside on the B-sites of the perovskite structure. The remaining one-fifth of the K+ ions on the B-sites retain octahedral coordination. The γ-phase is orthorhombic, space group Fddd, with lattice parameters of a = 36.1276(4) Å, b = 17.1133(2) Å, and c = 12.0562(1) Å (at 225 °C) and Z = 48. In the γ-phase, one-sixth of the AlF6 octahedra are randomly rotated about one of two directions by 45° while the other five-sixths remain essentially untilted. These rotations result in two-thirds of the K+ ions on the B-site obtaining 7-fold coordination while the other one-third remain in octahedral coordination. The δ-phase adopts the ideal cubic double-perovskite structure, space group Fmm, with a = 8.5943(1) Å at 400 °C. However, pair distribution function analysis shows that locally the δ-phase is quite different from its long-range average crystal structure. The AlF6 octahedra undergo large-amplitude rotations which are accompanied by off-center displacements of the K+ ions that occupy the 12-coordinate A-sites.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.857
Times cited: 19
DOI: 10.1021/ic200956a
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“Highly-translucent, strong and aging-resistant 3Y-TZP ceramics for dental restoration by grain boundary segregation”. Zhang F, Vanmeensel K, Batuk M, Hadermann J, Inokoshi M, Van Meerbeek B, Naert I, Vleugels J, Acta biomaterialia 16, 215 (2015). http://doi.org/10.1016/j.actbio.2015.01.037
Abstract: Latest trends in dental restorative ceramics involve the development of full-contour 3Y-TZP ceramics which can avoid chipping of veneering porcelains. Among the challenges are the low translucency and the hydrothermal stability of 3Y-TZP ceramics. In this work, different trivalent oxides (Al2O3, Sc2O3, Nd2O3 and La2O3) were selected to dope 3Y-TZP ceramics. Results show that dopant segregation was a key factor to design hydrothermally stable and high-translucent 3Y-TZP ceramics and the cation dopant radius could be used as a controlling parameter. A large trivalent dopant, oversized as compared to Zr4+, exhibiting strong segregation at the ZrO2 grain boundary was preferred. The introduction of 0.2 mol% La2O3 in conventional 0.10.25 wt.% Al2O3-doped 3Y-TZP resulted in an excellent combination of high translucency and superior hydrothermal stability, while retaining excellent mechanical properties.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 6.319
Times cited: 54
DOI: 10.1016/j.actbio.2015.01.037
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“Hole and exciton energy levels in InP/InxGa1-xP quantum dot molecules: influence of geometry and magnetic field dependence”. Mlinar V, Tadić, M, Peeters FM, Physical review : B : condensed matter and materials physics 73, 235336 (2006). http://doi.org/10.1103/PhysRevB.73.235336
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 16
DOI: 10.1103/PhysRevB.73.235336
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“Hole band engineering in self-assembled quantum dots and molecules”. Peeters FM, Tadić M, Janssens KL, Partoens B s.l., page 191 (2004).
Keywords: H1 Book chapter; Condensed Matter Theory (CMT)
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“Hole doping and structural transformation in CsTl1-xHgxCl3”. Retuerto M, Yin Z, Emge TJ, Stephens PW, Li MR, Sarkar T, Croft MC, Ignatov A, Yuan Z, Zhang SJ, Jin C, Paria Sena R, Hadermann J, Kotliar G, Greenblatt M;, Inorganic chemistry 54, 1066 (2015). http://doi.org/10.1021/ic502400d
Abstract: CsTlCl3 and CsTlF3 perovskites have been theoretically predicted to be superconductors when properly hole-doped. Both compounds have been previously prepared as pure compounds: CsTlCl3 in a tetragonal (I4/m) and a cubic (Fm3̅m) perovskite polymorph and CsTlF3 as a cubic perovskite (Fm3̅m). In this work, substitution of Tl in CsTlCl3 with Hg is reported, in an attempt to hole-dope the system and induce superconductivity. The whole series CsTl1xHgxCl3 (x = 0.0, 0.1, 0.2, 0.4, 0.6, and 0.8) was prepared. CsTl0.9Hg0.1Cl3 is tetragonal as the more stable phase of CsTlCl3. However, CsTl0.8Hg0.2Cl3 is already cubic with the space group Fm3̅m and with two different positions for Tl+ and Tl3+. For x = 0.4 and 0.5, solid solutions could not be formed. For x ≥ 0.6, the samples are primitive cubic perovskites with one crystallographic position for Tl+, Tl3+, and Hg2+. All of the samples formed are insulating, and there is no signature of superconductivity. X-ray absorption spectroscopy indicates that all of the samples have a mixed-valence state of Tl+ and Tl3+. Raman spectroscopy shows the presence of the active TlClTl stretching mode over the whole series and the intensity of the TlClHg mode increases with increasing Hg content. First-principle calculations confirmed that the phases are insulators in their ground state and that Hg is not a good dopant in the search for superconductivity in this system.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.857
Times cited: 5
DOI: 10.1021/ic502400d
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“Hole states in nanocups in a magnetic field”. Čukarić, N, Arsoski V, Tadić, M, Peeters FM, Physical review : B : condensed matter and materials physics 85, 235425 (2012). http://doi.org/10.1103/PhysRevB.85.235425
Abstract: The magnetic-field dependence of the hole states in a nanocup, which is composed of a ring (the nanocup rim) that surrounds a disk (the nanocup bottom), is obtained within the Luttinger-Kohn model for the unstrained GaAs/(Al,Ga) As and the strained (In,Ga) As/GaAs systems. Aharonov-Bohm oscillations due to angular momentum transitions of the hole ground state appear with periods that vary with the thickness of the disk. The strain in the (In, Ga) As/GaAs nanocup is sensitive to the disk thickness and favors the spatial localization of the heavy holes inside the disk. Therefore, the angular momentum transitions between the valence-band states disappear for much thinner disks than in the case of the unstrained GaAs/(Al, Ga) As nanocups. In both systems, the oscillations in the energy of the hole ground state are found to disappear for thinner inner layer than in the electron ground-state energy. This is due to the different confining potentials and the mixing between the heavy- and light-hole states. As a consequence, magnetization of the single hole is found to strongly depend on the bottom thickness of the strained (In, Ga) As/GaAs nanocup. Furthermore, we found that the strain can lead to a spatial separation of the electron and the hole, as in type-II band alignment, which is advantageous for the appearance of the excitonic Aharonov-Bohm effect.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 4
DOI: 10.1103/PhysRevB.85.235425
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“Hole subbands and effective masses in p-doped [113]-grown heterojunctions”. Goldoni G, Peeters FM, Physical review : B : condensed matter and materials physics 51, 17806 (1995). http://doi.org/10.1103/PhysRevB.51.17806
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 14
DOI: 10.1103/PhysRevB.51.17806
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