“Magnetopolaron effect on shallow donors in GaAs”. Cheng J-P, McCombe BD, Shi JM, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 48, 7910 (1993)
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 46
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“Magnetopolaron effect on the donor transition energies in ZnSe”. Shi JM, Peeters FM, Devreese JT, Imanaka Y, Miura N, Physical review : B : condensed matter and materials physics 52, 17205 (1995). http://doi.org/10.1103/PhysRevB.52.17205
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 7
DOI: 10.1103/PhysRevB.52.17205
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“Magnetoresistance in a hybrid ferromagnetic/semiconductor device”. Papp G, Peeters FM, Journal of applied physics 107, 063718 (2010). http://doi.org/10.1063/1.3359652
Abstract: Ballistic transport of a two-dimensional electron gas (2DEG) in a rectangle shaped wire, subjected to a local nonhomogeneous magnetic field that results from an in-plane magnetized ferromagnetic (FM) strip deposited above the 2DEG, is investigated theoretically. We found a positive magnetoresistance (MR), which exhibits hysteresis behavior with respect to the direction of the magnetic field sweep, in agreement with a recent experiment. This positive MR can be tuned by applying a gate voltage to the FM strip.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 10
DOI: 10.1063/1.3359652
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“Magnetoresistance in multilayer fullerene spin valves: A first-principles study”. Çakir D, Otalvaro DM, Brocks G, Physical review : B : condensed matter and materials physics 90, 245404 (2014). http://doi.org/10.1103/PhysRevB.90.245404
Abstract: Carbon-based molecular semiconductors are explored for application in spintronics because their small spinorbit coupling promises long spin lifetimes. We calculate the electronic transport from first principles through spin valves comprising bi-and tri-layers of the fullerene molecules C-60 and C-70, sandwiched between two Fe electrodes. The spin polarization of the current, and the magnetoresistance depend sensitively on the interactions at the interfaces between the molecules and the metal surfaces. They are much less affected by the thickness of the molecular layers. A high current polarization (CP > 90%) and magnetoresistance (MR > 100%) at small bias can be attained using C-70 layers. In contrast, the current polarization and the magnetoresistance at small bias are vanishingly small for C-60 layers. Exploiting a generalized Julliere model we can trace the differences in spin-dependent transport between C-60 and C-70 layers to differences between the molecule-metal interface states. These states also allow one to interpret the current polarization and the magnetoresistance as a function of the applied bias voltage.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 13
DOI: 10.1103/PhysRevB.90.245404
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“Magnetoresistance of a two-dimensional electron gas in weakly modulated magnetic fields”. Matulis A, Peeters FM, Physical review : B : condensed matter and materials physics 62, 91 (2000). http://doi.org/10.1103/PhysRevB.62.91
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 41
DOI: 10.1103/PhysRevB.62.91
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“Magnetoresistance oscillations in superconducting strips : a Ginzburg-Landau study”. Berdiyorov GR, Chao XH, Peeters FM, Wang HB, Moshchalkov VV, Zhu BY, Physical review : B : condensed matter and materials physics 86, 224504 (2012). http://doi.org/10.1103/PhysRevB.86.224504
Abstract: Within the time-dependent Ginzburg-Landau theory we study the dynamic properties of current-carrying superconducting strips in the presence of a perpendicular magnetic field. We found pronounced voltage peaks as a function of the magnetic field, the amplitude of which depends both on sample dimensions and external parameters. These voltage oscillations are a consequence of moving vortices, which undergo alternating static and dynamic phases. At higher fields or for high currents, the continuous motion of vortices is responsible for the monotonic background on which the resistance oscillations due to the entry of additional vortices are superimposed. Mechanisms for such vortex-assisted resistance oscillations are discussed. Qualitative changes in the magnetoresistance curves are observed in the presence of random defects, which affect the dynamics of vortices in the system.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 31
DOI: 10.1103/PhysRevB.86.224504
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“Magnetotransport across the metal-graphene hybrid interface and its modulation by gate voltage”. Chen J-J, Ke X, Van Tendeloo G, Meng J, Zhou Y-B, Liao Z-M, Yu D-P, Nanoscale 7, 5516 (2015). http://doi.org/10.1039/c5nr00223k
Abstract: The graphene-metal contact is very important for optimizing the performance of graphene based electronic devices. However, it is difficult to probe the properties of the graphene/metal interface directly via transport measurements in traditional graphene lateral devices, because the dominated transport channel is graphene, not the interface. Here, we employ the Au/graphene/Au vertical and lateral hybrid structure to unveil the metal-graphene interface properties, where the transport is dominated by the charge carriers across the interface. The magnetoresistance (MR) of Au/monolayer graphene/Au and Au/stacked two-layered graphene/Au devices is measured and modulated by gate voltage, demonstrating that the interface is a device. The gate-tunable MR is identified from the graphene lying on the SiO2 substrate and underneath the top metal electrode. Our unique structures couple the in-plane and out-of-plane transport and display linear MR with small amplitude oscillations at low temperatures. Under a magnetic field, the electronic coupling between the graphene edge states and the electrode leads to the appearance of quantum oscillations. Our results not only provide a new pathway to explore the intrinsic transport mechanism at the graphene/metal interface but also open up new vistas of magnetoelectronics.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 7.367
Times cited: 3
DOI: 10.1039/c5nr00223k
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“Magnetotransport in a pseudomorhic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si δ-doping layer”. van der Burgt M, Karavolas VC, Peeters FM, Singleton J, Nicholas RJ, Herlach F, Harris JJ, van Hove M, Borghs G, Physical review : B : condensed matter and materials physics 52, 12218 (1995)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 35
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“Magnetotransport in a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si \delta-doping layer”. van der Burgt M, Karavolas VC, Peeters FM, Singleton J, Nicholas RJ, Herlach F, Harris JJ, Van Hove M, Borghs G, Physical review : B : condensed matter and materials physics 52, 12218 (1995). http://doi.org/10.1103/PhysRevB.52.12218
Abstract: Magnetotransport properties of a pseudomorphic GsAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T = 1.4 and 4.2 K. The structure studied consists of a Si delta layer parallel to a Ga0.8In0.2As quantum well (QW). The dark electron density of the structure is n(c) = 1.67 x 10(16) m(-2). By illumination the density can be increased up to a factor of 4; this way the second subband in the Ga0.08In0.2As QW can become populated as well as the Si delta layer. The presence of electrons in the delta layer results in drastic changes in the transport data, especially at magnetic fields beyond 30 T. The phenomena observed are interpreted as (i) magnetic freeze-out of carriers in the delta layer when a low density of electrons is present in the delta layer, and (ii) quantization of the electron motion in the two-dimensional electron gases in both the Ga0.8In0.2As QW and the Si delta layer in the case of high densities. These conclusions are corroborated by the numerical results of our theoretical model. We obtain satisfactory agreement between model and experiment.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 43
DOI: 10.1103/PhysRevB.52.12218
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“Magnetotransport in periodically modulated bilayer graphene”. Zarenia M, Vasilopoulos P, Peeters FM, Physical review : B : condensed matter and materials physics 85, 245426 (2012). http://doi.org/10.1103/PhysRevB.85.245426
Abstract: Magnetotransport in bilayer graphene in the presence of a weak and periodic potential is investigated in the presence of a perpendicular magnetic field B. The modulation broadens the Landau levels into bands and for weak magnetic fields leads to the well-known Weiss oscillations in their bandwidth and their transport coefficients at very low B and to the Shubnikov-de Haas oscillations at larger B. The amplitude of the Weiss oscillations is severely reduced if the periodic potentials applied to the two layers oscillate out of phase. We also contrast some results with those corresponding to single-layer graphene. Relative to them the flat-band condition and the oscillation amplitude differ substantially, due to the interlayer coupling, and agree only when this coupling is extremely weak. We further show that the Hall conductivity exhibits the well-known steps at half-integer and integer multiples of 4e(2)/h in single-layer and bilayer graphene, respectively, even for very weak magnetic fields. The results are pertinent to weak and periodic corrugations when the potential modulation dominates the strain-induced magnetic modulation.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 21
DOI: 10.1103/PhysRevB.85.245426
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“Magnetotransport measurements on thin Ga1-xErxAs epitaxial films in pulsed magnetic fields”. Bogaerts R, van Bockstal L, Herlach F, Peeters FM, DeRosa F, Palmstrøm CJ, Allen SJ, Physica: B : condensed matter 177, 425 (1992). http://doi.org/10.1016/0921-4526(92)90142-F
Abstract: Magnet0transport measurements in pulsed fields up to 46 T and at temperatures between 1.4 and 210 K have been performed on thin semimetallic epitaxial layers of Sc1-xErxAs buried inside insulating GaAs. A consistent description is obtained of the magnetic field dependence of the Hall resistance and the different frequencies of the Shubnikov-de Hass oscillations.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.319
Times cited: 12
DOI: 10.1016/0921-4526(92)90142-F
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“Magnetotransport properties of Si-δ-doped InSb layers grown on GaAs”. de Keyser A, Bogaerts R, van Bockstal L, Hoeks W, Herlach F, Karavolas VC, Peeters FM, van de Graaf W, Borghs G, Physica: B : condensed matter 211, 455 (1995). http://doi.org/10.1016/0921-4526(94)01092-F
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.319
Times cited: 2
DOI: 10.1016/0921-4526(94)01092-F
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“Magnetotunneling of holes through single and double barriers using a multiband treatment”. Krstajić, P, Peeters FM, Physical review : B : condensed matter and materials physics 71, 115321 (2005). http://doi.org/10.1103/PhysRevB.71.115321
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 5
DOI: 10.1103/PhysRevB.71.115321
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“Majorana fermion states and fractional flux periodicity in mesoscopic d-wave superconducting loops with spin-orbit interaction”. Zha G-Q, Covaci L, Peeters FM, Zhou S-P, Physical review : B : condensed matter and materials physics 90, 014522 (2014). http://doi.org/10.1103/PhysRevB.90.014522
Abstract: We numerically investigate the spin-orbit (SO) coupling effect on the magnetic flux evolution of energy and supercurrent in mesoscopic d-wave superconducting loops by solving the spin-generalized Bogoliubov-de Gennes equations self-consistently. It is found that the energy spectrum splits when the SO interaction is involved and the Majorana zero mode can be realized in the [100] edges of square systems for an appropriate SO coupling strength. Superconducting phase transitions appear when the energy gap closes, accompanied by energy jumps between different energy parabolas in the ground state, which provides a possible mechanism to support fractional flux periodicity of supercurrent. Moreover, in the case of rectangular loops with SO coupling, the jumps of the ground-state energy gradually disappear by increasing the ratio of length to height of the sample, and a paramagnetic response with opposite direction of the screening current around zero flux value can occur in such systems.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 7
DOI: 10.1103/PhysRevB.90.014522
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Grujić, MM (2015) Manifestations of intrinsic and induced magnetic properties of graphene nanostructures. University of Antwerp, Faculty of Sciences, Department of Physics, Antwerp
Keywords: Doctoral thesis; Condensed Matter Theory (CMT)
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“Manipulation of two-electron states by the electric field in stacked self-assembled dots”. Nowak MP, Szafran B, Peeters FM, Journal of physics : condensed matter 20, 395225 (2008). http://doi.org/10.1088/0953-8984/20/39/395225
Abstract: A pair of electrons in vertically stacked self-assembled quantum dots is studied and the singlettriplet energy splitting is calculated in an external electric field using the configuration-interaction method. We show that for double quantum dots the dependence of the singlet energy levels on the electric field involves multiple avoided crossings of three energy levels. The exchange interaction, i.e., the energy difference of the lowest triplet and lowest singlet states, can be tuned by an electric field in a wide range of several tens of meV. For electric fields exceeding a threshold value the exchange interaction becomes a linear function of the field when the two electrons in the singlet state start to occupy the same dot. We also consider non-symmetric confinement, non-perfectly aligned dots, in horizontal as well as vertical field orientation. In a stack of three vertically coupled dots the depth of the confinement in the central dot can be used to enhance the exchange interaction. For a deeper central dot the dependence of the exchange interaction on the electric field is anomalousit initially decreases when the field is applied in both directions parallel and antiparallel to the axis of the stack. Such a behavior is never observed for a pair of quantum dots.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.649
Times cited: 5
DOI: 10.1088/0953-8984/20/39/395225
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“Many-body effects in the cyclotron resonance of a magnetic dot”. Nguten NTT, Peeters FM, Physical review : B : solid state 80, 115335 (2009). http://doi.org/10.1103/PhysRevB.80.115335
Abstract: Intraband cyclotron resonance (CR) transitions of a two-electron quantum dot containing a single magnetic ion is investigated for different Coulomb interaction strengths and different positions of the magnetic ion. In contrast to the usual parabolic quantum dots where CR is independent of the number of electrons, we found here that due to the presence of the magnetic ion Kohn's theorem no longer holds and CR is different for systems with different number of electrons and different effective electron-electron Coulomb interaction strength. Many-body effects result in shifts in the transition energies and change the number of CR lines. The position of the magnetic ion inside the quantum dot affects the structure of the CR spectrum by changing the position and the number of crossings and anticrossings in the transition energies and oscillator strengths.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 6
DOI: 10.1103/PhysRevB.80.115335
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“Masking effect of heat dissipation on the current-voltage characteristics of a mesoscopic superconducting sample with leads”. Vodolazov DY, Peeters FM, Morelle M, Moshchalkov VV, Physical review : B : condensed matter and materials physics 71, 184502 (2005). http://doi.org/10.1103/PhysRevB.71.184502
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 43
DOI: 10.1103/PhysRevB.71.184502
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“Mass spectrometric analysis of inorganic solids: GDMS and other methods”. Gijbels R, van Straaten M, Bogaerts A, Advances in mass spectrometry 13, 241 (1995)
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 12
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“Mathematical modelling of an analytical glow discharge”. Bogaerts A, van Straaten M, Gijbels R KD Marketing Services, Milton Keynes, page 82 (1995).
Keywords: H3 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Measurement of specimen thickness by phase change determination in TEM”. Croitoru MD, van Dyck D, Liu YZ, Zhang Z, Ultramicroscopy 108, 1616 (2008). http://doi.org/10.1016/j.ultramic.2008.06.002
Abstract: A non-destructive method for measuring the thickness of thin amorphous films composed of light elements has been developed. The method employs the statistics of the phase of the electron exit wave function. The accuracy of this method has been checked numerically by the multislice method and compared with that based on the mean inner potential.
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.843
Times cited: 2
DOI: 10.1016/j.ultramic.2008.06.002
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“Measurement of the mean inner potential of ZnO nanorods by transmission electron holography”. Müller E, Kruse P, Gerthsen D, Schowalter M, Rosenauer A, Lamoen D, Kling R, Waag A, Applied Physics Letters 86 (2005). http://doi.org/10.1063/1.1901820
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 3.411
Times cited: 5
DOI: 10.1063/1.1901820
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“Measuring point defect density in individual carbon nanotubes using polarization-dependent X-ray microscopy”. Felten A, Gillon X, Gulas M, Pireaux J-J, Ke X, Van Tendeloo G, Bittencourt C, Najafi E, Hitchcock AP, ACS nano 4, 4431 (2010). http://doi.org/10.1021/nn1002248
Abstract: The presence of defects in carbon nanotubes strongly modifies their electrical, mechanical, and chemical properties. It was long thought undesirable, but recent experiments have shown that introduction of structural defects using ion or electron irradiation can lead to novel nanodevices. We demonstrate a method for detecting and quantifying point defect density in individual carbon nanotubes (CNTs) based on measuring the polarization dependence (linear dichroism) of the C 1s → π* transition at specific locations along individual CNTs with a scanning transmission X-ray microscope (STXM). We show that STXM can be used to probe defect density in individual CNTs with high spatial resolution. The quantitative relationship between ion dose, nanotube diameter, and defect density was explored by purposely irradiating selected sections of nanotubes with kiloelectronvolt (keV) Ga+ ions. Our results establish polarization-dependent X-ray microscopy as a new and very powerful characterization technique for carbon nanotubes and other anisotropic nanostructures.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 13.942
Times cited: 26
DOI: 10.1021/nn1002248
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“Measuring quantum Hall resistors in pulsed magnetic fields”. van der Burgt M, Peeters FM, Singleton J, Nicholas RJ, Herlach F, Harris JJ, Foxon CT, , 750 (1995)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“Mécanismes de la non-stoechiométrie dans les nouveaux supraconducteurs à, haute Tc”. Hervieu M, Michel C, Martin C, Huvé, M, Van Tendeloo G, Maignan A, Pelloquin D, Goutenoire F, Raveau B, Journal de physique: 3: applied physics, materials science, fluids, plasma and instrumentation 4, 2057 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Mechanical and thermal properties of h-MX2 (M = Cr, Mo, W, X = O, S, Se, Te) monolayers : a comparative study”. Çakir D, Peeters FM, Sevik C, Applied physics letters 104, 203110 (2014). http://doi.org/10.1063/1.4879543
Abstract: Using density functional theory, we obtain the mechanical and thermal properties of MX2 monolayers (where M = Cr, Mo, W and X = O, S, Se, Te). The C-centered phonon frequencies (i.e., A(1), A(2)'', E ', and E ''), relative frequency values of A(1), and E ' modes, and mechanical properties (i.e., elastic constants, Young modulus, and Poisson's ratio) display a strong dependence on the type of metal and chalcogenide atoms. In each chalcogenide (metal) group, transition-metal dichalcogenides (TMDCs) with W (O) atom are found to be much stiffer. Consistent with their stability, the thermal expansion of lattice constants for TMDCs with O (Te) is much slower (faster). Furthermore, in a heterostructure of these materials, the difference of the thermal expansion of lattice constants between the individual components becomes quite tiny over the whole temperature range. The calculated mechanical and thermal properties show that TMDCs are promising materials for heterostructures. (C) 2014 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 130
DOI: 10.1063/1.4879543
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“Mechanical resonance of the austenite/martensite interface and the pinning of the martensitic microstructures by dislocations in Cu74.08Al23.13Be2.79”. Salje EKH, Zhang H, Idrissi H, Schryvers D, Carpenter MA, Moya X, Planes A, Physical review: B: condensed matter and materials physics 80, 134114 (2009). http://doi.org/10.1103/PhysRevB.80.134114
Abstract: A single crystal of Cu74.08Al23.13Be2.79 undergoes a martensitic phase transition at 246 and 232 K under heating and cooling, respectively. The phase fronts between the austenite and martensite regions of the sample are weakly mobile with a power-law resonance under external stress fields. Surprisingly, the martensite phase is elastically much harder than the austenite phase showing that interfaces between various crystallographic variants are strongly pinned and cannot be moved by external stress while the phase boundary between the austenite and martensite regions in the sample remains mobile. This unusual behavior was studied by dynamical mechanical analysis (DMA) and resonant ultrasound spectroscopy. The remnant strain, storage modulus, and internal friction were recorded simultaneously for different applied forces in DMA. With increasing forces, the remnant strain increases monotonously while the internal friction peak height shows a minimum at 300 mN. Transmission electron microscopy shows that the pinning is generated by dislocations which are inherited from the austenite phase.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 38
DOI: 10.1103/PhysRevB.80.134114
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“Mechanical synthesis of high purity Cu-In-Se alloy nanopowder as precursor for printed CISe thin film solar cells”. Zaghi AE, Buffière M, Brammertz G, Batuk M, Lenaers N, Kniknie B, Hadermann J, Meuris M, Poortmans J, Vleugels J, Advanced powder technology 25, 1254 (2014). http://doi.org/10.1016/j.apt.2014.03.003
Abstract: Mechanical alloying and ball milling are low cost, up-scalable techniques for the preparation of high purity chalcogenide nanopowders to be used as precursor material for printing thin film solar cells. In this study, high purity copper indium selenium (Cu-In-Se) alloy nanopowders with 20-200 nm particle size were synthesized from macroscopic elemental Cu, In and Se powders via mechanical alloying and planetary ball milling. The particle size distribution, morphology, composition, and purity level of the synthesized Cu-In-Se alloy nanopowders were investigated. Thin Cu-In-Se alloy nanopowder ink coatings, deposited on Mo-coated glass substrates by doctor blading, were converted into a CuInSe2 semiconductor film by selenization heat treatment in Se vapor. The CuInSe2 film showed semiconducting band gap around 1 eV measured by photoluminescence spectroscopy. CuInSe2 absorber layer based thin film solar cell devices were fabricated to assess their performance. The solar cell device showed a total efficiency of 4.8%, as measured on 0.25 cm(2) area cell. (c) 2014 The Society of Powder Technology Japan. Published by Elsevier B.V. and The Society of Powder Technology Japan. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.659
Times cited: 10
DOI: 10.1016/j.apt.2014.03.003
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“Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN/GaN high-electron-mobility transistors”. Van Daele B, Van Tendeloo G, Derluyn J, Shrivastava P, Lorenz A, Leys MR, Germain M;, Applied physics letters 89, Artn 201908 (2006). http://doi.org/10.1063/1.2388889
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 15
DOI: 10.1063/1.2388889
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“Mechanisms for the trimethylaluminum reaction in aluminum oxide atomic layer deposition on sulfur passivated germanium”. Delabie A, Sioncke S, Rip J, van Elshocht S, Caymax M, Pourtois G, Pierloot K, The journal of physical chemistry: C : nanomaterials and interfaces 115, 17523 (2011). http://doi.org/10.1021/jp206070y
Abstract: Germanium combined with high-κ dielectrics is investigated for the next generations of CMOS devices. Therefore, we study reaction mechanisms for Al2O3 atomic layer deposition on sulfur passivated Ge using calculations based on density functional theory and total reflection X-ray fluorescence (TXRF). TXRF indicates 6 S/nm2 and 4 Al/nm2 after the first TMA/H2O reaction cycle, and growth inhibition from the second reaction cycle on. Calculations are performed on molecular clusters representing −GeSH surface sites. The calculations confirm that the TMA reaction does not affect the S content. On fully SH-terminated Ge, TMA favorably reacts with up to three −GeSH sites, resulting in a near tetrahedral Al coordination. Electron deficient structures with a GeS site shared between two Al atoms are proposed. The impact of the cluster size on the structures and reaction energetics is systematically investigated.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 4.536
Times cited: 9
DOI: 10.1021/jp206070y
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