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“TEM characterization of extended defects induced in Si wafers by H-plasma treatment”. Ghica C, Nistor LC, Bender H, Richard O, Van Tendeloo G, Ulyashin A, Journal of physics: D: applied physics 40, 395 (2007). http://doi.org/10.1088/0022-3727/40/2/016
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.588
Times cited: 10
DOI: 10.1088/0022-3727/40/2/016
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“TEM characterization of structural defects”. Van Tendeloo G Plenum Press, New York, page 473 (1996).
Keywords: H1 Book chapter; Electron microscopy for materials research (EMAT)
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“TEM investigation of the formation mechanism of deformation twins in Fe-Mn-Si-Al TWIP steels”. Idrissi H, Renard K, Schryvers D, Jacques PJ, Philosophical magazine 93, 4378 (2013). http://doi.org/10.1080/14786435.2013.832837
Abstract: The microstructure of a Fe-Mn-Si-Al twinning-induced plasticity (TWIP) steel exhibiting remarkable work hardening rate under uniaxial tensile deformation was investigated using transmission electron microscopy to uncover the mechanism(s) controlling the nucleation and growth of the mechanically induced twins. The results show that the stair-rod cross-slip deviation mechanism is necessary for the formation of the twins, while large extrinsic stacking faults homogenously distributed within the grains could act as preferential sources for the activation of the deviation process. The influence of such features on the thickness and strength of the twins and the resulting mechanical behaviour is discussed and compared to similar works recently performed on Fe-Mn-C TWIP steels.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.505
Times cited: 15
DOI: 10.1080/14786435.2013.832837
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“TEM investigation of the microstructure and defects of CuZr martensite: 1: morphology and twin systems”. Seo JW, Schryvers D, Acta materialia 46, 1165 (1998). http://doi.org/10.1016/S1359-6454(97)00333-9
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 5.301
Times cited: 46
DOI: 10.1016/S1359-6454(97)00333-9
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“TEM investigation of the microstructure and defects of CuZr martensite: 2: planar defects”. Seo JW, Schryvers D, Acta materialia 46, 1177 (1998). http://doi.org/10.1016/S1359-6454(97)00334-0
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 5.301
Times cited: 21
DOI: 10.1016/S1359-6454(97)00334-0
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“TEM observation of aggregation steps in room-temperature silicalite-1 zeolite formation”. Liang D, Follens LRA, Aerts A, Martens JA, Van Tendeloo G, Kirschhock CEA, Journal of physical chemistry C 111, 14283 (2007). http://doi.org/10.1021/jp074960k
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.536
Times cited: 41
DOI: 10.1021/jp074960k
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“TEM of nanostructured materials”. Van Tendeloo G, Pauwels B, Geuens P, Lebedev O, , 3 (2000)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
Times cited: 31
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“TEM of phase transitions in tridymite and cristobalite based materials”. Van Tendeloo G, Microscoy and microanalysis 6 (2000)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“TEM of ultra-thin DyBa2Cu3O7-x films deposited on TiO2 terminated SrTiO3”. Bals S, Rijnders G, Blank DHA, Van Tendeloo G, Physica: C : superconductivity 355, 225 (2001). http://doi.org/10.1016/S0921-4534(01)00034-X
Abstract: Using pulsed laser deposition ultra-thin DyBa2Cu3O7-x films were deposited on a single terminated (0 0 1) SrTiOr(3) substrate. The initial growth was studied by high-resolution electron microscopy. Two different types of interface arrangements occur and were determined as: bulk-SrO-TiO2-BaO-CuO-BaO-CuO2-Dy-CuO2-BaO bulk and bulk-SrO-TiO2-BaO-CuO2-Dy-CuO2-BaO-CuO-BaO-bulk This variable growth sequence causes structural shifts, resulting in antiphase boundaries with displacement vector R = [0 0 1/3]. as well as local chemical variations. (C) 2001 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.404
Times cited: 26
DOI: 10.1016/S0921-4534(01)00034-X
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“TEM sample preparation by FIB for carbon nanotube interconnects”. Ke X, Bals S, Romo Negreira A, Hantschel T, Bender H, Van Tendeloo G, Ultramicroscopy 109, 1353 (2009). http://doi.org/10.1016/j.ultramic.2009.06.011
Abstract: A powerful method to study carbon nanotubes (CNTs) grown in patterned substrates for potential interconnects applications is transmission electron microscopy (TEM). However, high-quality TEM samples are necessary for such a study. Here, TEM specimen preparation by focused ion beam (FIB) has been used to obtain lamellae of patterned samples containing CNTs grown inside contact holes. A dual-cap Pt protection layer and an extensive 5 kV cleaning procedure are applied in order to preserve the CNTs and avoid deterioration during milling. TEM results show that the inner shell structure of the carbon nanotubes has been preserved, which proves that focused ion beam is a useful technique to prepare TEM samples of CNT interconnects.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.843
Times cited: 21
DOI: 10.1016/j.ultramic.2009.06.011
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“TEM studies of processed Si device materials”. Vanhellemont J, Bender H, van Landuyt J, Conference series of the Institute of Physics 157, 393 (1997)
Abstract: Recent developments in the field of TEM characterisation of Si device materials are discussed and illustrated by a few case studies of material in different stages of various kinds of processing. Important challenges are the ever decreasing defect densities and device feature sizes. Defect delineation techniques using large area inspection tools yielding accurate coordinates of the defects to be studied have therefore become an essential part of the TEM analysis procedure. The possibility to transfer these defect coordinates without loss of accuracy to tools for local TEM specimen preparation is also a conditio sine qua non for a successful analysis. Insitu TEM remains important as dynamic processes can be observed and analysed under well defined experimental conditions. As case studies illustrating new developments, results are presented on defects in as-grown Ct silicon, on in-situ studies in processed silicon, on problem sites in advanced integrated circuit structures and on assessment of localised strain fields in the nm size scale.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“TEM study of B2 + L12 decomposition in a nanoscale Ni-rich Ni-Al film”. Schryvers D, Yandouzi M, Toth L, Thin solid films : an international journal on the science and technology of thin and thick films 326, 126 (1998). http://doi.org/10.1016/S0040-6090(98)00545-8
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.879
Times cited: 1
DOI: 10.1016/S0040-6090(98)00545-8
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“TEM study of laser induced phase transition in iron thin films”. Teodorescu VS, Nistor LC, van Landuyt J, Dinescu M, Materials research bulletin 29, 63 (1994). http://doi.org/10.1016/0025-5408(94)90106-6
Abstract: Laser induced phase transition from b.c.c.(alpha) to f.c.c.(gamma) iron thin films is studied by high resolution TEM. The iron film has been covered on both sides with carbon layers to protect it against oxidation. Single pulse, tau FWHM = 20ns KrF (lambda = 248nm) excimer laser irradiation was performed in air with the film on the substrate. The laser pulse acts like a heat pulse followed by a rapid quenching revealing sequential aspects of the phase transition process. The presence of a fine mixture of the alpha + gamma phases between the alpha and gamma regions of the film has been interpreted as an incomplet transformation. The results are explained by assuming that the transformation took place via a phonon drag mechanism.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.288
Times cited: 2
DOI: 10.1016/0025-5408(94)90106-6
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“A TEM study of nanoparticles in lustre glazes”. Fredrickx P, Helary D, Schryvers D, Darque-Ceretti E, Applied physics A : materials science &, processing 79, 283 (2004). http://doi.org/10.1007/s00339-004-2515-3
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.455
Times cited: 16
DOI: 10.1007/s00339-004-2515-3
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“A TEM study of non-parallel twins inducing thickness growth in silver chloride {111} tabular crystals”. van Renterghem W, Schryvers D, van Landuyt J, Bollen D, van Roost C, de Keyzer R, The journal of imaging science and technology 45, 83 (2001)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.348
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Wang B (2011) TEM study of plasticity mechanisms in metals : nanocrystalline Al Pd thin films and bulk bcc Nb. Antwerpen
Keywords: Doctoral thesis; Electron microscopy for materials research (EMAT)
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“TEM study of YBa2Cu3O7-x thin films with Zn and Fe”. Verbist K, Van Tendeloo G, Ye M, Mehbod M, Deltour R, Physica: C : superconductivity 235, 663 (1994). http://doi.org/10.1016/0921-4534(94)91555-5
Abstract: Analytical and high resolution electron microscopy have been used to study the effect of Zn- and Fe-doping on the micro structure of [001] YBa2Cu3O7-x thin films on [001] MgO substrates grown by magnetron sputtering. Special attention was paid to the presence of second phase inclusions and surface outgrowths such as CuO, Y2Ba1Cu1O5-x, Y2O3 in order to establish a relationship with the critical current density.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.942
DOI: 10.1016/0921-4534(94)91555-5
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“TEM study of the mechanism of Ni ion release from Nitinol wires with original oxides”. Tian H, Schryvers D, Shabalovskaya S, van Humbeeck J, , 05027 (2009). http://doi.org/10.1051/esomat/200905027
Abstract: The surface of commercial Nitinol wires with original oxides and a thickness in the 30-190 nm range was investigated by different state of art TEM techniques. The oxide surface layer was identified as a combination of TiO and TiO2 depending on the processing of the wire. Between the core of the wires and the oxidized surface, an interfacial Ni3Ti nanolayer was observed while Ni nanoparticles are found inside the original oxide. The particle sizes, their distribution in the surface and the Ti-O stoichiometry were deduced from the analysis of the obtained data. Molecular dynamics calculations performed for evaluation of the stability of Ni particles relative to the atomic state revealed that a pure Ni particle has a lower energy than free Ni atoms inside the TiO2 lattice. The obtained results are discussed with respect to surface stability and Ni release in the human body.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
Times cited: 1
DOI: 10.1051/esomat/200905027
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“TEM study on precipitation behavior in Cu-Co alloys”. Takeda M, Suzuki N, Shinohara G, Endo T, van Landuyt J, Physica status solidi: A: applied research 168, 27 (1998). http://doi.org/10.1002/(SICI)1521-396X(199807)168:1<27::AID-PSSA27>3.0.CO;2-S
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 18
DOI: 10.1002/(SICI)1521-396X(199807)168:1<27::AID-PSSA27>3.0.CO;2-S
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“Een tempel voor elektronenmicroscopie “kijken naar atomen””. van Landuyt J, Fonds informatief 38, 13 (1998)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“Temperature and magnetic field dependence of the voltagein GaAs films with superconducting Ga grains”. Willems BL, Taylor DMJ, Fritzsche J, Malfait M, Vanacken J, Moshchalkov VV, Montoya E, Van Tendeloo G, European physical journal : B : condensed matter and complex systems 66, 25 (2008). http://doi.org/10.1140/epjb/e2008-00386-3
Abstract: We have studied granular films consisting of nanoscale Ga droplets formed on GaAs films via a method of vacuum annealing to promote As evaporation. For temperatures and magnetic fields below the bulk Ga critical parameters, the samples are very sensitive towards external microwave radiation when two point voltage measurements are performed. Together with the observation of an oscillating magnetic field dependence of the voltage, a scenario in which the samples consist of Josephson-coupled loops seems to be the most likely one for explaining the obtained results.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.461
DOI: 10.1140/epjb/e2008-00386-3
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“Temperature-dependent Debye-Waller factors for semiconductors with the wurtzite-type structure”. Schowalter M, Rosenauer A, Titantah JT, Lamoen D, Acta crystallographica: section A: foundations of crystallography 65, 227 (2009). http://doi.org/10.1107/S0108767309004966
Abstract: We computed Debye-Waller factors in the temperature range from 0.1 to 1000 K for AlN, GaN, InN, ZnO and CdO with the wurtzite-type structure. The Debye-Waller factors were derived from phonon densities of states obtained from Hellmann-Feynman forces computed within the density-functional-theory formalism. The temperature dependences of the Debye-Waller factors were fitted and fit parameters are given.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 5.725
Times cited: 23
DOI: 10.1107/S0108767309004966
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“Temperature-dependent modeling and characterization of through-silicon via capacitance”. Katti G, Stucchi M, Velenis D, Sorée B, de Meyer K, Dehaene W, IEEE electron device letters 32, 563 (2011). http://doi.org/10.1109/LED.2011.2109052
Abstract: A semianalytical model of the through-silicon via (TSV) capacitance for elevated operating temperatures is derived and verified with electrical measurements. The effect of temperature on the increase in TSV capacitance over different technology parameters is explored, and it is shown that higher oxide thickness reduces the impact of temperature rise on TSV capacitance, while with low doped substrates, which are instrumental for reducing the TSV capacitance, the sensitivity of TSV capacitance to temperature is large and cannot be ignored.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.048
Times cited: 27
DOI: 10.1109/LED.2011.2109052
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“Temperature effect on the 002 structure factor of ternary Ga1-xInxAs crystals”. Titantah JT, Lamoen D, Schowalter M, Rosenauer A, Physical review : B : condensed matter and materials physics 76, 073303 (2007). http://doi.org/10.1103/PhysRevB.76.073303
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 3
DOI: 10.1103/PhysRevB.76.073303
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“Temperature influence on the reactivity of plasma species on a nickel catalyst surface : an atomic scale study”. Somers W, Bogaerts A, van Duin ACT, Huygh S, Bal KM, Neyts EC, Catalysis today 211, 131 (2013). http://doi.org/10.1016/j.cattod.2013.02.010
Abstract: In recent years, the potential use of hydrogen as a clean energy source has gained considerable attention. Especially H2 formation by Ni-catalyzed reforming of methane at elevated temperatures is an attractive process. However, a more fundamental knowledge at the atomic level is needed for a full comprehension of the reactions at the catalyst surface. In this contribution, we therefore investigate the H2 formation after CHx impacts on a Ni(1 1 1) surface in the temperature range 4001600 K, by means of reactive molecular dynamics (MD) simulations using the ReaxFF potential. While some H2 formation is already observed at the lower temperatures, substantial H2 formation is only obtained at elevated temperatures of 1400 K and above. At 1600 K, the H2 molecules are even the most frequently formed species. In direct correlation with the increasing dehydrogenation at elevated temperatures, an increased surface-to-subsurface C-diffusivity is observed as well. This study highlights the major importance of the temperature on the H2 formation.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 4.636
Times cited: 27
DOI: 10.1016/j.cattod.2013.02.010
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“A temperature study of mixed AgBr-AgBrI tabular crystals”. Goessens C, Schryvers D, van Landuyt J, Geuens I, Gijbels R, Jacob W, de Keyzer R Hawaii, page 70 (1995).
Keywords: H1 Book chapter; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 3
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“A temperature study of mixed AgBr-AgBrI tabular crystals”. Goessens C, Schryvers D, van Landuyt J, Geuens I, Gijbels R, Jacob W, de Keyzer R, , 36 (1992)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Temporal and spatially resolved laser-scattering plasma diagnostics for the characterization of a ms-pulsed glow discharge”. Gamez G, Bogaerts A, Hieftje GM, Journal of analytical atomic spectrometry 21, 350 (2006). http://doi.org/10.1039/b511764j
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.379
Times cited: 17
DOI: 10.1039/b511764j
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“Temporary cooling of quasiparticles and delay in voltage response of superconducting bridges after abruptly switching on the supercritical current”. Vodolazov DY, Peeters FM, Physical review : B : condensed matter and materials physics 90, 094504 (2014). http://doi.org/10.1103/PhysRevB.90.094504
Abstract: We revisit the problem of the dynamic response of a superconducting bridge after abruptly switching on the supercritical current. In contrast to previous theoretical works we take into account spatial gradients and use both the local temperature approach and the kinetic equation for the distribution function of quasiparticles. We find that the temperature dependence of the finite delay time t(d) in the voltage response is model dependent and relatively large t(d) is connected with temporary cooling of quasiparticles during decay of superconducting order parameter vertical bar Delta vertical bar in time. It turns out that the presence of even small inhomogeneities in the bridge or finite length of the homogenous bridge favors a local suppression of vertical bar Delta vertical bar during the dynamic response. It results in a decrease of the delay time, in comparison with the spatially uniform model, due to the diffusion of nonequilibrium quasiparticles from the region with locally suppressed vertical bar Delta vertical bar. In the case when the current density is maximal near the edge of a not very wide bridge the delay time is mainly connected with the time needed for the nucleation (entrance) of the first vortex and t(d) could be tuned by a weak external magnetic field. We also find that a short alternating current pulse (sinusoidlike) with zero time average may result in a nonzero time- averaged voltage response where its sign depends on the phase of the ac current.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 2
DOI: 10.1103/PhysRevB.90.094504
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“Tensile strained Ge tunnel field-effect transistors: k\cdot p material modeling and numerical device simulation”. Kao K-H, Verhulst AS, Van de Put M, Vandenberghe WG, Sorée B, Magnus W, De Meyer K, Journal of applied physics 115, 044505 (2014). http://doi.org/10.1063/1.4862806
Abstract: Group IV based tunnel field-effect transistors generally show lower on-current than III-V based devices because of the weaker phonon-assisted tunneling transitions in the group IV indirect bandgap materials. Direct tunneling in Ge, however, can be enhanced by strain engineering. In this work, we use a 30-band k.p method to calculate the band structure of biaxial tensile strained Ge and then extract the bandgaps and effective masses at Gamma and L symmetry points in k-space, from which the parameters for the direct and indirect band-to-band tunneling (BTBT) models are determined. While transitions from the heavy and light hole valence bands to the conduction band edge at the L point are always bridged by phonon scattering, we highlight a new finding that only the light-holelike valence band is strongly coupling to the conduction band at the Gamma point even in the presence of strain based on the 30-band k.p analysis. By utilizing a Technology Computer Aided Design simulator equipped with the calculated band-to-band tunneling BTBT models, the electrical characteristics of tensile strained Ge point and line tunneling devices are self-consistently computed considering multiple dynamic nonlocal tunnel paths. The influence of field-induced quantum confinement on the tunneling onset is included. Our simulation predicts that an on-current up to 160 (260) mu A/mu m can be achieved along with on/off ratio > 10(6) for V-DD = 0.5V by the n-type (p-type) line tunneling device made of 2.5% biaxial tensile strained Ge. (C) 2014 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 26
DOI: 10.1063/1.4862806
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