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Jannis D (2021) Novel detection schemes for transmission electron microscopy. iv, 208 p
Abstract: Electron microscopy is an excellent tool which provides resolution down to the atomic scale with up to pm precision in locating atoms. The characterization of materials in these length scales is of utmost importance to answer questions in biology, chemistry and material science. The successful implementation of aberration-corrected microscopes made atomic resolution imaging relatively easy, this could give the impression that the development of novel electron microscopy techniques would stagnate and only the application of these instruments as giant magnifying tools would continue. This is of course not true and a multitude of problems still exist in electron microscopy. Two of such issues are discussed below. One of the biggest problems in electron microscopy is the presence of beam damage which occurs due the fact that the highly energetic incoming electrons have sufficient kinetic energy to change the structure of the material. The amount of damage induced depends on the dose, hence minimizing this dose during an experiment is beneficial. This minimizing of the total dose comes at the expense of more noise due to the counting nature of the electrons. For this reason, the implementation of four dimensional scanning transmission electron microscopy (4D STEM) experiments has reduced the total dose needed per acquisition. However, the current cameras used to measure the diffraction patterns are still two orders of magnitude slower than to the conventional STEM methods. Improving the acquisition speed would make the 4D STEM technique more feasible and is of utmost importance for the beam sensitive materials since less dose is used during the acquisition. In TEM there is not only the possibility to perform imaging experiments but also spectroscopic measurements. There are two frequently used methods: electron energy-loss spectroscopy (EELS) and energy dispersive x-ray spectroscopy (EDX). EELS measures the energy-loss spectrum of the incoming electron which gives information on the available excitations in the material providing elemental sensitivity. In EDX, the characteristic x-rays, arising from the decay of an atom which is initially excited due to the incoming electrons, are detected providing similar elemental analysis. Both methods are able to provide comparable elemental information where in certain circumstances one outperforms the other. However, both methods have a detection limit of approximately 100-1000 ppm which is not sufficient for some materials. In this thesis, two novel techniques which can make significant progress for the two problems discussed above.
Keywords: Doctoral thesis; Electron microscopy for materials research (EMAT)
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Jannis D, Mü,ller-Caspary K, Bé,ché, A, Oelsner A, Verbeeck J (2019) Spectrocopic coincidence experiment in transmission electron microscopy
Abstract: This dataset contains individual EEL and EDX events where for every event (electron or X-ray), their energy and time of arrival is stored. The experiment was performed in a transmission electron microscope (Tecnai Osiris) at 200 keV. The material investigated is an Al-Mg-Si-Cu alloy. The 'full_dataset.mat' contains the full dataset and the 'subset.mat' has the first five frames of the full dataset. The attached 'EELS-EDX.ipynb' is a jupyter notebook file. This file describes the data processing in order to observe the temporal correlation between the electrons and X-rays.
Keywords: Dataset; Electron microscopy for materials research (EMAT)
DOI: 10.5281/ZENODO.2563880
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Annys A, Jannis D, Verbeeck J (2023) Core-loss EELS dataset and neural networks for element identification
Abstract: We present a large dataset containing simulated core-loss electron energy loss spectroscopy (EELS) spectra with the elemental content as ground-truth labels. Additionally we present some neural networks trained on this data for element identification. The simulated dataset contains zero padded core-loss spectra from 0 to 3072 eV, which represents 107 core-loss edges through all 80 elements from Be up to Bi. The core-loss edges are calculated from the generalised oscillator strength (GOS) database presented by Zhang et al.[1] Generic fine structures using lifetime broadened peaks are used to imitate fine structure due to solid-state effects in experimental spectra. Generic low-loss regions are used to imitate the effect of multiple scattering. Each spectrum contains at least one edge of a given query element and possibly additional edges depending on samples drawn from The Materials Project [2]. The dataset contains for each of the 80 elements: 7000 training spectra, 1500 test spectra, 600 validation spectra and 100 spectra representing only the query element. This results in a total 736 000 labeled spectra. Code on how to – read the simulated data – transform HDF5 format to TFRecord format – train and evaluate neural networks using the simulated data – use the trained networks for automated element identification is available on GitHub at arnoannys/EELS_ID A full report on the simulation of the dataset and the training and evaluation of the neural networks can be found at: Annys, A., Jannis, D. & Verbeeck, J. Deep learning for automated materials characterisation in core-loss electron energy loss spectroscopy. Sci Rep 13, 13724 (2023). https://doi.org/10.1038/s41598-023-40943-7 [1] Zezhong Zhang, Ivan Lobato, Daen Jannis, Johan Verbeeck, Sandra Van Aert, & Peter Nellist. (2023). Generalised oscillator strength for core-shell electron excitation by fast electrons based on Dirac solutions (1.0) [Data set]. Zenodo. https://doi.org/10.5281/zenodo.7729585 [2] Anubhav Jain, Shyue Ping Ong, Geoffroy Hautier, Wei Chen, William Davidson Richards, Stephen Dacek, Shreyas Cholia, Dan Gunter, David Skinner, Gerbrand Ceder, Kristin A. Persson; Commentary: The Materials Project: A materials genome approach to accelerating materials innovation. APL Mater 1 July 2013; 1 (1): 011002. [https://doi.org/10.1063/1.4812323](https://doi.org/10.1063/1.4812323)
Keywords: Dataset; Electron microscopy for materials research (EMAT)
DOI: 10.5281/ZENODO.8004912
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“Giant tunability of Rashba splitting at cation-exchanged polar oxide interfaces by selective orbital hybridization”. Xu H, Li H, Gauquelin N, Chen X, Wu W-F, Zhao Y, Si L, Tian D, Li L, Gan Y, Qi S, Li M, Hu F, Sun J, Jannis D, Yu P, Chen G, Zhong Z, Radovic M, Verbeeck J, Chen Y, Shen B, Advanced materials (2024). http://doi.org/10.1002/ADMA.202313297
Abstract: The 2D electron gas (2DEG) at oxide interfaces exhibits extraordinary properties, such as 2D superconductivity and ferromagnetism, coupled to strongly correlated electrons in narrow d-bands. In particular, 2DEGs in KTaO3 (KTO) with 5d t2g orbitals exhibit larger atomic spin-orbit coupling and crystal-facet-dependent superconductivity absent for 3d 2DEGs in SrTiO3 (STO). Herein, by tracing the interfacial chemistry, weak anti-localization magneto-transport behavior, and electronic structures of (001), (110), and (111) KTO 2DEGs, unambiguously cation exchange across KTO interfaces is discovered. Therefore, the origin of the 2DEGs at KTO-based interfaces is dramatically different from the electronic reconstruction observed at STO interfaces. More importantly, as the interface polarization grows with the higher order planes in the KTO case, the Rashba spin splitting becomes maximal for the superconducting (111) interfaces approximately twice that of the (001) interface. The larger Rashba spin splitting couples strongly to the asymmetric chiral texture of the orbital angular moment, and results mainly from the enhanced inter-orbital hopping of the t2g bands and more localized wave functions. This finding has profound implications for the search for topological superconductors, as well as the realization of efficient spin-charge interconversion for low-power spin-orbitronics based on (110) and (111) KTO interfaces. An unambiguous cation exchange is discovered across the interfaces of (001), (110), and (111) KTaO3 2D electron gases fabricated at room temperature. Remarkably, the (111) interfaces with the highest superconducting transition temperature also turn out to show the strongest electron-phonon interaction and the largest Rashba spin splitting. image
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 29.4
DOI: 10.1002/ADMA.202313297
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“Photoluminescence of germanium-vacancy centers in nanocrystalline diamond films : implications for quantum sensing applications”. Joy RM, Pobedinskas P, Bourgeois E, Chakraborty T, Goerlitz J, Herrmann D, Noel C, Heupel J, Jannis D, Gauquelin N, D'Haen J, Verbeeck J, Popov C, Houssiau L, Becher C, Nesladek M, Haenen K, ACS applied nano materials 7, 3873 (2024). http://doi.org/10.1021/ACSANM.3C05491
Abstract: Point defects in diamond, promising candidates for nanoscale pressure- and temperature-sensing applications, are potentially scalable in polycrystalline diamond fabricated using the microwave plasma-enhanced chemical vapor deposition (MW PE CVD) technique. However, this approach introduces residual stress in the diamond films, leading to variations in the characteristic zero phonon line (ZPL) of the point defect in diamond. Here, we report the effect of residual stress on germanium-vacancy (GeV) centers in MW PE CVD nanocrystalline diamond (NCD) films fabricated using single crystal Ge as the substrate and solid dopant source. GeV ensemble formation indicated by the zero phonon line (ZPL) at similar to 602 nm is confirmed by room temperature (RT) photoluminescence (PL) measurements. PL mapping results show spatial nonuniformity in GeV formation along with other defects, including silicon-vacancy centers in the diamond films. The residual stress in NCD results in shifts in the PL peak positions. By estimating a stress shift coefficient of (2.9 +/- 0.9) nm/GPa, the GeV PL peak position in the NCD film is determined to be between 598.7 and 603.2 nm. A larger ground state splitting due to the strain on a GeV-incorporated NCD pillar at a low temperature (10 K) is also reported. We also report the observation of intense ZPLs at RT that in some cases could be related to low Ge concentration and the surrounding crystalline environment. In addition, we also observe thicker microcrystalline diamond (MCD) films delaminate from the Ge substrate due to film residual stress and graphitic phase at the diamond/Ge substrate interface (confirmed by electron energy loss spectroscopy). Using this approach, a free-standing color center incorporated MCD film with dimensions up to 1 x 1 cm(2) is fabricated. Qualitative analysis using time-of-flight secondary ion mass spectroscopy reveals the presence of impurities, including Ge and silicon, in the MCD film. Our experimental results will provide insights into the scalability of GeV fabrication using the MW PE CVD technique and effectively implement NCD-based nanoscale-sensing applications.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 5.9
DOI: 10.1021/ACSANM.3C05491
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