Number of records found: 4750
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Electroluminescence spectra of an STM-tip-induced quantum dot”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Kemerink M, Koenraad PM, Sauthoff K, Wolter JH, Physical review : B : condensed matter and materials physics 68, 195307 (2003). http://doi.org/10.1103/PhysRevB.68.195307
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Electron acceleration by an intense short-pulse laser in underdense plasma”. Yu MY, Yu W, Chen ZY, Zhang J, Yin Y, Cao LH, Lu PX, Xu ZZ, Physics of plasmas 10, 2468 (2003). http://doi.org/10.1063/1.1572158
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Electron and hole localization in coupled InP/InGaP self-assembled quantum dots”. Tadić, M, Peeters FM, Partoens B, Janssens KL, Physica. E: Low-dimensional systems and nanostructures 13, 237 (2002). http://doi.org/10.1016/S1386-9477(01)00528-8
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Electron and hole states in a quantum ring grown by droplet epitaxy. Influence of the layer inside the ring opening”. Čukarić, N, Tadić, M, Peeters FM, Superlattices and microstructures 48, 491 (2010). http://doi.org/10.1016/j.spmi.2010.09.001
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Electron and hole states in diluted magnetic semiconductor quantum dots”. Chang K, Li SS, Xia JB, Peeters FM, Physical review : B : condensed matter and materials physics 69, 235203 (2004). http://doi.org/10.1103/PhysRevB.69.235203
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Electron Boltzmann kinetic equation averaged over fast electron bouncing and pitch-angle scattering for fast modeling of electron cyclotron resonance discharge”. Kaganovich I, Misina M, Berezhnoi S, Gijbels R, Physical review : E : statistical, nonlinear, and soft matter physics 61, 1875 (2000). http://doi.org/10.1103/PhysRevE.61.1875
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Electron capture in GaAs quantum wells via electron-electron and optic phonon scattering”. Kálna K, Mo×ko M, Peeters FM, Applied physics letters 68, 117 (1996)
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Electron correlation effects in quantum dots”. Matulis A, Peeters FM, , 1875 (1995)
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Electron effective mass and resonant polaron effect in CdTe/CdMgTe quantum wells”. Karczewski G, Wojtowicz T, Wang Y-J, Wu X, Peeters FM, Physica status solidi: B: basic research T2 –, 10th International Conference on II-VI Compounds, SEP 09-14, 2001, BREMEN, GERMANY 229, 597 (2002). http://doi.org/10.1002/1521-3951(200201)229:1<597::AID-PSSB597>3.0.CO;2-P
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Electron-electron interactions in bilayer graphene quantum dots”. Zarenia M, Partoens B, Chakraborty T, Peeters FM, Physical review : B : condensed matter and materials physics 88, 245432 (2013). http://doi.org/10.1103/PhysRevB.88.245432
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Electron-electron scattering induced capture in GaAs quantum wells”. Kálna K, Mo×ko M, Peeters FM, Lithuanian journal of physics 35, 435 (1995)
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Electron energy and temperature relaxation in graphene on a piezoelectric substrate”. Zhang SH, Xu W, Peeters FM, Badalyan SM, Physical review : B : condensed matter and materials physics 89, 195409 (2014). http://doi.org/10.1103/PhysRevB.89.195409
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Electron energy distribution function in capacitively coupled RF discharges: differences between electropositive Ar and electronegative SiH4 discharges”. Yan M, Bogaerts A, Goedheer WJ, Gijbels R, Plasma sources science and technology 9, 583 (2000). http://doi.org/10.1088/0963-0252/9/4/314
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Electron energy-loss spectroscopy study of a (LaMnO3)8(SrMnO3)4 heterostructure”. Verbeeck J, Lebedev OI, Van Tendeloo G, Silcox J, Mercey B, Hervieu M, Haghiri-Gosnet AM, Applied physics letters 79, 2037 (2001). http://doi.org/10.1063/1.1403316
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Electron microscopy and mass-spectrometry study of In GaAsP/InP heterostructures (p-i-n diodes) grown by liquid phase epitaxy”. Volkov VV, Luyten W, van Landuyt J, Férauge C, Oksenoid KG, Gijbels R, Vasilev MG, Shelyakin AA, Lazarev VB, Physica status solidi: A: applied research 140, 73 (1993). http://doi.org/10.1002/pssa.2211400105
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Electron microscopy and mass-spectrometry study of In0.72Ga0.28As0.62P0.38 lasers grown by liquid phase epitaxy”. Luyten W, Volkov VV, van Landuyt J, Amelinckx S, Férauge C, Gijbels R, Vasilev MG, Shelyakin AA, Lazarev VB, Physica status solidi: A: applied research 140, 453 (1993). http://doi.org/10.1002/pssa.2211400216
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Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+”. Frangis N, van Landuyt J, Grimaldi MG, Calcagno L, Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 –, Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France 120, 186 (1996). http://doi.org/10.1016/S0168-583X(96)00506-X
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Electron microscopy and X-ray diffraction studies of rapidly quenched Zr-Ni an Hf-Ni ribbons with about 90 at.% Ni”. Cziraki A, Fogarassy F, Van Tendeloo G, Lamparter P, Tegze M, Bakonyi I, Journal of alloys and compounds 210, 135 (1994). http://doi.org/10.1016/0925-8388(94)90128-7
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Electron microscopy and X-ray structural investigations of incommensurate spin-ladder Sr4.1Ca4.7Bi0.3Cu17O29 single crystals”. Dluzewski P, Pietraszko A, Kozlowski M, Szczepanska A, Gorecka J, Baran M, Leonyuk L, Babonas GJ, Lebedev OI, Szymczak R, Acta physica Polonica: A: general physics, solid state physics, applied physics 98, 729 (2000)
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Electron microscopy and X-ray study of the growth of FeCr2S4 spinel single crystals by chemical vapour transport”. Volkov VV, van Heurck C, van Landuyt J, Amelinckx S, Zhukov EG, Polulyak ES, Novotortsev VM, Crystal research and technology 28, 1051 (1993). http://doi.org/10.1002/crat.2170280804
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Electron microscopy investigation of superconducting La2Cu(O,F)4+y oxyfluoride”. Weill F, Chevalier B, Chambon M, Tressaud A, Darriet B, Etourneau J, Van Tendeloo G, European journal of solid state and inorganic chemistry 30, 1095 (1993)
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Electron microscopy of a family of hexagonal perovskites: one-dimensional structures related to Sr4Ni3O9”. Huvé, M, Renard C, Abraham F, Van Tendeloo G, Amelinckx S, Journal of solid state chemistry 135, 1 (1998). http://doi.org/10.1006/jssc.1997.7522
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Electron-mobility in 2 coupled delta-layers”. Hai, Studart, Peeters FM, Physical review : B : condensed matter and materials physics 52, 11273 (1995). http://doi.org/10.1103/PhysRevB.52.11273
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Electron mobility in Si δ-doped GaAs with spatial correlations in the distribution of charged impurities”. Shi JM, Koenraad PM, van de Stadt AFW, Peeters FM, Farias GA, Devreese JT, Wolter JH, Wilamowski Z, Physical review : B : condensed matter and materials physics 55, 13093 (1997)
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Electron mobility in Si delta doped GaAs”. Koenraad PM, van de Stadt AFW, Hai GQ, Shi JM, Vansant P, Peeters FM, Devreese JT, Perenboom JAAJ, Wolter JH, Physica: B : condensed matter 211, 462 (1995). http://doi.org/10.1016/0921-4526(94)01094-H
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Electron mobility in Si delta-doped GaAs”. Hai GQ, Studart N, Peeters FM, Devreese JT, Koenraad PM, van de Stadt AFW, Wolter JH, Proceedings of the International Conference on the Physics of Semiconductors 22, 823 (1994)
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Electron mobility in two coupled &delta, layers”. Hai GQ, Studart N, Peeters FM, Physical review : B : condensed matter and materials physics 52, 11273 (1995)
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Electron optical-phonon coupling in GaAs/AlxGa1-xAs quantum wells due to interface, slab and half-space modes”. Hai GQ, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 48, 4666 (1993). http://doi.org/10.1103/PhysRevB.48.4666
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Electron-phonon bound state in graphene”. Badalyan SM, Peeters FM, Physical review : B : condensed matter and materials physics 85, 205453 (2012). http://doi.org/10.1103/PhysRevB.85.205453
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Electron-phonon bound states in graphene in a perpendicular magnetic field”. Zhu J, Badalyan SM, Peeters FM, Physical review letters 109, 256602 (2012). http://doi.org/10.1103/PhysRevLett.109.256602
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