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“Gate controlled Aharonov-Bohm-type oscillations from single neutral excitons in quantum rings”. Ding F, Akopian N, Li B, Perinetti U, Govorov A, Peeters FM, Bufon CC, Deneke C, Chen YH, Rastelli A, Schmidt OG, Zwiller V, Physical review : B : condensed matter and materials physics 82, 8 (2010). http://doi.org/10.1103/PhysRevB.82.075309
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 58
DOI: 10.1103/PhysRevB.82.075309
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“Single neutral excitons confined in AsBr3 in situ etched InGaAs quantum rings”. Ding F, Li B, Akopian N, Perinetti U, Chen YH, Peeters FM, Rastelli A, Zwiller V, Schmidt OG, Journal of nanoelectronics and optoelectronics 6, 51 (2011). http://doi.org/10.1166/jno.2011.1132
Abstract: We observe the evolution of single self-assembled semiconductor quantum dots into quantum rings during AsBr3 in situ etching. The direct three-dimensional imaging of In(Ga)As nanostructures embedded in GaAs matrix is demonstrated by selective wet chemical etching combined with atomic force microscopy. Single neutral excitons confined in these quantum rings are studied by magneto-photoluminescence. Oscillations in the exciton radiative recombination energy and in the emission intensity are observed under an applied magnetic field. Further, we demonstrate that the period of the oscillations can be tuned by a gate potential that modifies the exciton confinement. The experimental results, combined with calculations, indicate that the exciton Aharonov-Bohm effect may account for the observed effects.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 0.497
Times cited: 3
DOI: 10.1166/jno.2011.1132
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Zhang Y, Grü,newald L, Cao X, Abdelbarey D, Zheng X, Rugeramigabo EP, Zopf M, Verbeeck J, Ding F (2024) Supplementary Information and Data for “Unveiling the 3D Morphology of Epitaxial GaAs/AlGaAs Quantum Dots”
Abstract: Raw and processed TEM and AFM data for the article Unveiling the 3D Morphology of Epitaxial GaAs/AlGaAs Quantum Dots.
Keywords: Dataset; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
DOI: 10.5281/ZENODO.11449864
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“Unveiling the 3D morphology of epitaxial GaAs/AlGaAs quantum dots”. Zhang Y, Grunewald L, Cao X, Abdelbarey D, Zheng X, Rugeramigabo EP, Verbeeck J, Zopf M, Ding F, Nano letters 24, 10106 (2024). http://doi.org/10.1021/ACS.NANOLETT.4C02182
Abstract: Strain-free GaAs/AlGaAs semiconductor quantum dots (QDs) grown by droplet etching and nanohole infilling (DENI) are highly promising candidates for the on-demand generation of indistinguishable and entangled photon sources. The spectroscopic fingerprint and quantum optical properties of QDs are significantly influenced by their morphology. The effects of nanohole geometry and infilled material on the exciton binding energies and fine structure splitting are well-understood. However, a comprehensive understanding of GaAs/AlGaAs QD morphology remains elusive. To address this, we employ high-resolution scanning transmission electron microscopy (STEM) and reverse engineering through selective chemical etching and atomic force microscopy (AFM). Cross-sectional STEM of uncapped QDs reveals an inverted conical nanohole with Al-rich sidewalls and defect-free interfaces. Subsequent selective chemical etching and AFM measurements further reveal asymmetries in element distribution. This study enhances the understanding of DENI QD morphology and provides a fundamental three-dimensional structural model for simulating and optimizing their optoelectronic properties.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 10.8
DOI: 10.1021/ACS.NANOLETT.4C02182
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