Number of records found: 980
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A non-linear variational principle for the self-consistent solution of Poisson's equation and a transport equation in the local density approximation”. Carrillo-Nuñez H, Magnus W, Peeters FM, , 171 (2010)
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Ke X (2010) From top-down to bottom-up : from carbon nanotubes to nanodevices. Antwerpen
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Enhanced stability against oxidation due to 2D self-organisation of hcp cobalt nanocrystals”. Lisiecki I, Turner S, Bals S, Pileni MP, Van Tendeloo G Springer, Berlin, page 273 (2008).
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d' Hondt H (2011) Characterization of anion deficient perovskites. Antwerpen
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Computer simulations of laser ablation, plume expansion and plasma formation”. Bogaerts A, Aghaei M, Autrique D, Lindner H, Chen Z, Wendelen W Trans Tech, Aedermannsdorf, page 1 (2011).
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Numerical modelling for a dielectric barrier discharge at atmospheric pressure in nitrogen”. Madani M, Bogaerts A, Vangeneugden D, , 53 (2005)
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The use of surface analysis techniques and isotope mass spectrometry for the study of water-rock interactions of interest in hot-dry rock technology”. Adriaens A, van Nevel L, Van 't dack L, de Bièvre P, Adams F, Gijbels R, , 2541 (1995)
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Eckert M (2010) Combined molecular dynamics and Monte Carlo simulations for the deposition of (ultra)nanocrystalline diamond. Antwerpen
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Cao S (2010) Quantitative 3D analysis of Ni4Ti3 precipitate morphology and distribution in Ni-Ti by FIB/SEM slice-and-view. Antwerpen
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Superconducting nanowires : new type of BCS-BEC crossover driven by quantum-size effects”. Shanenko AA, Croitoru MD, Vagov A, Peeters FM, , 119 (2011). http://doi.org/10.1007/978-94-007-0044-4_9
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Xu B (2011) Magnetic, calorimetric and electronic properties of vortex states in (3D) mesoscopic superconductors. Antwerpen
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Tinck S (2011) Numerical simulations of inductively coupled plasmas for applications in the microelectronics industry. Antwerpen
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Polaron effects in heterostructures, quantum wells and superlattices”. Peeters FM, Devreese JT, , 99 (1994)
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The junctionless nanowire transistor”. Sorée B, Pham A-T, Sels D, Magnus W Pan Stanford, S.l., page ? (2011).
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Transport in nanostructures”. Magnus W, Carrillo-Nunez H, Sorée B Pan Stanford, S.l. (2011).
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Wang W-C (2011) Quantitative analysis of electron exit waves with single atom sensitivity. Antwerpen
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Wang B (2011) TEM study of plasticity mechanisms in metals : nanocrystalline Al Pd thin films and bulk bcc Nb. Antwerpen
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Molecular structure, crystal field and orientational order in solid C60”. Lamoen D, Michel KH s.l., page 183 (1994).
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High-resolution visualization techniques : structural aspects”. Schryvers D, Van Aert S Springer, Berlin, page 135 (2012).
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Biermans E (2012) Electron tomography : from qualitative to quantitative. Antwerpen
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Observation of paramagnetic supercurrent in mesoscopic superconducting rings and disks using multiple-small-tunnel-junction method”. Kanda A, Baelus BJ, Peeters FM, Kadowaki K, Ootuka Y, , 204 (2005). http://doi.org/10.1142/9789812701619_0032
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Ni4Ti3 precipitates and their influence on the surrounding NiTi matrix”. Schryvers D, Tirry W, Yang Z, , 205 (2005)
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MgB2 : superconductivity and pressure effects”. Ivanov VA, Betouras JJ, Peeters FM, , 35 (2003)
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Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy”. De Gryse O, Clauws P, Vanhellemont J, Lebedev O, van Landuyt J, Simoen E, Claeys C, , 183 (2002)
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Modeling of a dielectric barrier discharge used as a flowing chemical reactor”. Petrovic D, Martens T, van Dijk J, Brok WJM, Bogaerts A, , 262 (2008)
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Sputtering of Si(001) and SiC(001) by grazing ion bombardment”. Elmonov AA, Yusupov MS, Dzhurakhalov AA, Bogaerts A, , 209 (2008)
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The influence of the secondary electron emission coefficient and effect of the gas heating on the calculated electrical characteristics of a grimm type glow discharge cell”. Derzsi A, Donko Z, Bogaerts A, Hoffmann V, , 285 (2008)
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Quantitative EFTEM study of germanium quantum dots”. Hens S, Stuer C, Bender H, Loo R, van Landuyt J, , 345 (2001)
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Stress analysis with convergent beam electron diffraction around NMOS transistors”. Stuer G, Bender H, van Landuyt J, Eyben P, , 359 (2001)
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The influence of the precipitation method on defect formation in multishell AgBrI (111) tabular crystals”. Van Renterghem W, Karthauser S, Schryvers D, van Landuyt J, De Keyzer R, Van Roost C, , 167 (2000)
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