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Author |
Gauquelin, N.; Zhang, H.; Zhu, G.; Wei, J.Y.T.; Botton, G.A. |
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Title |
Atomic-scale identification of novel planar defect phases in heteroepitaxial YBa2Cu3O7-\delta thin films |
Type |
A1 Journal article |
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Year |
2018 |
Publication |
AIP advances |
Abbreviated Journal |
Aip Adv |
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Volume |
8 |
Issue |
5 |
Pages |
055022 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
We have discovered two novel types of planar defects that appear in heteroepitaxial YBa2Cu3O7-delta(YBCO123) thin films, grown by pulsed-laser deposition (PLD) either with or without a La2/3Ca1/3MnO3 (LCMO) overlayer, using the combination of highangle annular dark-field scanning transmission electron microscopy (HAADF-STEM) imaging and electron energy loss spectroscopy (EELS) mapping for unambiguous identification. These planar lattice defects are based on the intergrowth of either a BaO plane between two CuO chains or multiple Y-O layers between two CuO2 planes, resulting in non-stoichiometric layer sequences that could directly impact the high-Tc superconductivity. (C) 2018 Author(s). |
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Publisher |
American Institute of Physics |
Place of Publication |
Melville, NY |
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Wos |
000433954000022 |
Publication Date |
2018-05-21 |
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Series Issue |
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Edition |
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ISSN |
2158-3226 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.568 |
Times cited |
1 |
Open Access |
OpenAccess |
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Notes |
; We are thankful to Julia Huang for FIB TEM sample preparation. This work is supported by NSERC (through Discovery Grants to GAB and JYTW) and CIFAR. The electron microscopy work was carried out at the Canadian Centre for Electron Microscopy, a National Facility supported by McMaster University, the Canada Foundation for Innovation and NSERC. N.G. acknowledges H. Idrissi for useful discussions. ; |
Approved |
Most recent IF: 1.568 |
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Call Number |
UA @ lucian @ c:irua:152063 |
Serial |
5013 |
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Author |
Bhat, S.G.; Gauquelin, N.; Sebastian, N.K.; Sil, A.; Béché, A.; Verbeeck, J.; Samal, D.; Kumar, P.S.A. |
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Title |
Orthorhombic vs. hexagonal epitaxial SrIrO3 thin films : structural stability and related electrical transport properties |
Type |
A1 Journal article |
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Year |
2018 |
Publication |
Europhysics letters |
Abbreviated Journal |
Epl-Europhys Lett |
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Volume |
122 |
Issue |
2 |
Pages |
28003 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Metastable orthorhombic SrIrO3 (SIO) is an arch-type spin-orbit coupled material. We demonstrate here a controlled growth of relatively thick (200 nm) SIO films that transform from bulk “6H-type” structure with monoclinic distortion to an orthorhombic lattice by controlling growth temperature. Extensive studies based on high-resolution X-ray diffraction and transmission electron microscopy infer a two distinct structural phases of SIO. Electrical transport reveals a weak temperature-dependent semi-metallic character for both phases. However, the temperature-dependent Hall-coefficient for the orthorhombic SIO exhibits a prominent sign change, suggesting a multiband character in the vicinity of E-F. Our findings thus unravel the subtle structure-property relation in SIO epitaxial thin films. Copyright (C) EPLA, 2018 |
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Place of Publication |
Paris |
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Wos |
000435517300001 |
Publication Date |
2018-06-18 |
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Series Issue |
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Edition |
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ISSN |
0295-5075 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.957 |
Times cited |
4 |
Open Access |
Not_Open_Access |
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Notes |
; SGB and DS acknowledge useful discussions with E. P. Houwman, University of Twente, on X-ray diffraction. DS would like to thank H. Takagi, Max-Planck Institute for Solid State Research, Stuttgart, for the fruitful discussion on the transport properties of SIO thin films. SGB and NKS thank A. Aravind, Bishop Moore College, Mavelikara, for his valuable inputs while depositing the thin films of SIO. SGB, NKS and PSAK acknowledge Nano Mission Council, Department of Science & Technology, India, for the funding. DS acknowledges the financial support from Max-Planck Society through MaxPlanck Partner Group. NG, AB and JV acknowledge funding from GOA project “Solarpaint” of the University of Antwerp and FWO project G093417N. ; |
Approved |
Most recent IF: 1.957 |
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Call Number |
UA @ lucian @ c:irua:152074UA @ admin @ c:irua:152074 |
Serial |
5034 |
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Author |
Müller-Caspary, K.; Grieb, T.; Müßener, J.; Gauquelin, N.; Hille, P.; Schörmann, J.; Verbeeck, J.; Van Aert, S.; Eickhoff, M.; Rosenauer, A. |
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Title |
Electrical Polarization in AlN/GaN Nanodisks Measured by Momentum-Resolved 4D Scanning Transmission Electron Microscopy |
Type |
A1 Journal article |
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Year |
2019 |
Publication |
Physical review letters |
Abbreviated Journal |
Phys Rev Lett |
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Volume |
122 |
Issue |
10 |
Pages |
106102 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
We report the mapping of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures at unit cell resolution as a key for the correlation of optical and structural phenomena in semiconductor optoelectronics. Momentum-resolved aberration-corrected scanning transmission electron microscopy is employed as a new imaging mode that simultaneously provides four-dimensional data in real and reciprocal space. We demonstrate how internal mesoscale and atomic electric fields can be separated in an experiment, which is verified by comprehensive dynamical simulations of multiple electron scattering. A mean difference of 5.3 +- 1.5 MV/cm is found for the polarization-induced electric fields in AlN and GaN, being in accordance with dedicated simulations and photoluminescence measurements in previous publications. |
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Wos |
000461067700007 |
Publication Date |
2019-03-11 |
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Edition |
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ISSN |
0031-9007 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
8.462 |
Times cited |
26 |
Open Access |
OpenAccess |
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Notes |
The authors gratefully acknowledge the help of Natalie Claes for analyzing the EDX data. K. M.-C. acknowledges funding from the Initiative and Network Fund of the Helmholtz Association within the Helmholtz Young Investigator Group moreSTEM under Contract No. VHNG- 1317 at Forschungszentrum Jülich in Germany. The direct electron detector (Medipix3, Quantum Detectors) was funded by the Hercules fund from the Flemish Government. N. G. and J. V. acknowledge funding from the Geconcentreerde Onderzoekacties project Solarpaint of the University of Antwerp. T. G. and A. R. acknowledge support from the Deutsche Forschungsgemeinschaft (Germany) under Contract No. RO2057/8-3. This work also received funding from the European Research Council under the European Union’s Horizon 2020 research and innovation programme (Contract No. 770887). The authors acknowledge financial support from the Research Foundation Flanders (FWO, Belgium) through project funding (G.0368.15N).; Helmholtz Association, VH-NG-1317 ; Forschungszentrum Jülich; Flemish Government; Universiteit Antwerpen; Deutsche Forschungsgemeinschaft, RO2057/8-3 ; H2020 European Research Council, 770887 ; Fonds Wetenschappelijk Onderzoek, G.0368.15N ; |
Approved |
Most recent IF: 8.462 |
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Call Number |
UA @ lucian @UA @ admin @ c:irua:158120 |
Serial |
5157 |
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Permanent link to this record |