“Present state of the composition evaluation of ternary semiconductor nanostructures by lattice fringe analysis”. Rosenauer A, Gerthsen D, Van Aert S, van Dyck D, den Dekker AJ, Institute of physics conference series , 19 (2003)
Abstract: Semiconductor heterostructures are used for the fabrication of optoelectronic devices. Performance of such devices is governed by their chemical morphology. The composition distribution of quantum wells and dots is influenced by kinetic growth processes which are not understood completely at present. To obtain more information about these effects, methods for composition determination with a spatial resolution at a near atomic scale are necessary. In this paper we focus on the present state of the composition evaluation by the lattice fringe analysis (CELFA) technique and explain the basic ideas, optimum imaging conditions, precision and accuracy.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
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“Structural, chemical and electronic characterization of ceramic materials using quantitative (scanning) transmission electron microscopy”. Bals S, Van Aert S, Verbeeck J, Van Tendeloo G, Microscopy and microanalysis 13, 332 (2007). http://doi.org/10.1017/S1431927607081664
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.891
DOI: 10.1017/S1431927607081664
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“Ultra-high resolution electron tomography for materials science : a roadmap”. Batenburg KJ, Bals S, Van Aert S, Roelandts T, Sijbers J, Microscopy and microanalysis 17, 934 (2011). http://doi.org/10.1017/S143192761100554X
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 1.891
DOI: 10.1017/S143192761100554X
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“Atomic resolution mapping using quantitative high-angle annular dark field scanning transmission electron microscopy”. Van Aert S, Verbeeck J, Bals S, Erni R, van Dyck D, Van Tendeloo G, Microscopy and microanalysis 15, 464 (2009). http://doi.org/10.1017/S1431927609093957
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 1.891
Times cited: 1
DOI: 10.1017/S1431927609093957
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“Computational aspects in quantitative EELS”. Verbeeck J, Van Aert S, Zhang L, Haiyan T, Schattschneider P, Rosenauer A, Microscopy and microanalysis 16, 240 (2010). http://doi.org/10.1017/S143192761005511X
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.891
DOI: 10.1017/S143192761005511X
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“Fully automated measurement of the modulation transfer function of charge-coupled devices above the Nyquist frequency”. van den Broek W, Van Aert S, van Dyck D, Microscopy and microanalysis 18, 336 (2012). http://doi.org/10.1017/S1431927611012633
Abstract: The charge-coupled devices used in electron microscopy are coated with a scintillating crystal that gives rise to a severe modulation transfer function (MTF). Exact knowledge of the MTF is imperative for a good correspondence between image simulation and experiment. We present a practical method to measure the MTF above the Nyquist frequency from the beam blocker's shadow image. The image processing has been fully automated and the program is made public. The method is successfully tested on three cameras with various beam blocker shapes.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 1.891
Times cited: 15
DOI: 10.1017/S1431927611012633
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“Correction of non-linear thickness effects in HAADF STEM electron tomography”. van den Broek W, Rosenauer A, Goris B, Martinez GT, Bals S, Van Aert S, van Dyck D, Ultramicroscopy 116, 8 (2012). http://doi.org/10.1016/j.ultramic.2012.03.005
Abstract: In materials science, high angle annular dark field scanning transmission electron microscopy is often used for tomography at the nanometer scale. In this work, it is shown that a thickness dependent, non-linear damping of the recorded intensities occurs. This results in an underestimated intensity in the interior of reconstructions of homogeneous particles, which is known as the cupping artifact. In this paper, this non-linear effect is demonstrated in experimental images taken under common conditions and is reproduced with a numerical simulation. Furthermore, an analytical derivation shows that these non-linearities can be inverted if the imaging is done quantitatively, thus preventing cupping in the reconstruction.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.843
Times cited: 67
DOI: 10.1016/j.ultramic.2012.03.005
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“Direct structure inversion from exit waves : part 2 : a practical example”. Wang A, Chen FR, Van Aert S, van Dyck D, Ultramicroscopy 116, 77 (2012). http://doi.org/10.1016/j.ultramic.2012.03.011
Abstract: This paper is the second part of a two-part paper on direct structure inversion from exit waves. In the first part, a method has been proposed to quantitatively determine structure parameters with atomic resolution such as atom column positions, surface profile and the number of atoms in the atom columns. In this part, the theory will be demonstrated by means of a Au[110] exit wave reconstructed from a set of focal-series images. The procedures to analyze the experimentally reconstructed exit wave in terms of quantitative structure information are described in detail.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.843
Times cited: 8
DOI: 10.1016/j.ultramic.2012.03.011
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“Statistical parameter estimation theory : a tool for quantitative electron microscopy”. Van Aert S Wiley-VCH, Weinheim, page 281 (2012).
Keywords: H1 Book chapter; Electron microscopy for materials research (EMAT)
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“Electrical Polarization in AlN/GaN Nanodisks Measured by Momentum-Resolved 4D Scanning Transmission Electron Microscopy”. Müller-Caspary K, Grieb T, Müßener J, Gauquelin N, Hille P, Schörmann J, Verbeeck J, Van Aert S, Eickhoff M, Rosenauer A, Physical review letters 122, 106102 (2019). http://doi.org/10.1103/PhysRevLett.122.106102
Abstract: We report the mapping of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures at unit cell resolution as a key for the correlation of optical and structural phenomena in semiconductor optoelectronics. Momentum-resolved aberration-corrected scanning transmission electron microscopy is employed as a new imaging mode that simultaneously provides four-dimensional data in real and reciprocal space. We demonstrate how internal mesoscale and atomic electric fields can be separated in an experiment, which is verified by comprehensive dynamical simulations of multiple electron scattering. A mean difference of 5.3 +- 1.5 MV/cm is found for the polarization-induced electric fields in AlN and GaN, being in accordance with dedicated simulations and photoluminescence measurements in previous publications.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 8.462
Times cited: 26
DOI: 10.1103/PhysRevLett.122.106102
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