| Records |
| Author |
Batenburg, K.J.; Bals, S.; Van Aert, S.; Roelandts, T.; Sijbers, J. |
| Title |
Ultra-high resolution electron tomography for materials science : a roadmap |
Type |
A1 Journal article |
| Year |
2011 |
Publication |
Microscopy and microanalysis |
Abbreviated Journal |
Microsc Microanal |
| Volume |
17 |
Issue |
S:2 |
Pages |
934-935 |
| Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
| Abstract |
|
| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
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Place of Publication |
Cambridge, Mass. |
Editor |
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| Language |
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Wos |
|
Publication Date |
2011-10-07 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
1431-9276;1435-8115; |
ISBN |
|
Additional Links |
UA library record |
| Impact Factor |
1.891 |
Times cited |
|
Open Access |
|
| Notes |
|
Approved |
Most recent IF: 1.891; 2011 IF: 3.007 |
Call Number  |
UA @ lucian @ c:irua:96554 |
Serial |
3792 |
| Permanent link to this record |
| |
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| |
| Author |
Van Aert, S.; Verbeeck, J.; Bals, S.; Erni, R.; van Dyck, D.; Van Tendeloo, G. |
| Title |
Atomic resolution mapping using quantitative high-angle annular dark field scanning transmission electron microscopy |
Type |
A1 Journal article |
| Year |
2009 |
Publication |
Microscopy and microanalysis |
Abbreviated Journal |
Microsc Microanal |
| Volume |
15 |
Issue |
S:2 |
Pages |
464-465 |
| Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
| Abstract |
|
| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
|
Place of Publication |
Cambridge, Mass. |
Editor |
|
| Language |
|
Wos |
000208119100230 |
Publication Date |
2009-07-27 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
1431-9276;1435-8115; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
1.891 |
Times cited |
1 |
Open Access |
|
| Notes |
|
Approved |
Most recent IF: 1.891; 2009 IF: 3.035 |
| Call Number |
UA @ lucian @ c:irua:96555UA @ admin @ c:irua:96555 |
Serial |
178 |
| Permanent link to this record |
| |
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| |
| Author |
Verbeeck, J.; Van Aert, S.; Zhang, L.; Haiyan, T.; Schattschneider, P.; Rosenauer, A. |
| Title |
Computational aspects in quantitative EELS |
Type |
A1 Journal article |
| Year |
2010 |
Publication |
Microscopy and microanalysis |
Abbreviated Journal |
Microsc Microanal |
| Volume |
16 |
Issue |
S:2 |
Pages |
240-241 |
| Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| Abstract |
|
| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
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Place of Publication |
Cambridge, Mass. |
Editor |
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| Language |
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Wos |
|
Publication Date |
2010-08-26 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
1431-9276;1435-8115; |
ISBN |
|
Additional Links |
UA library record |
| Impact Factor |
1.891 |
Times cited |
|
Open Access |
|
| Notes |
|
Approved |
Most recent IF: 1.891; 2010 IF: 3.259 |
| Call Number |
UA @ lucian @ c:irua:96556UA @ admin @ c:irua:96556 |
Serial |
454 |
| Permanent link to this record |
| |
|
| |
| Author |
van den Broek, W.; Van Aert, S.; van Dyck, D. |
| Title |
Fully automated measurement of the modulation transfer function of charge-coupled devices above the Nyquist frequency |
Type |
A1 Journal article |
| Year |
2012 |
Publication |
Microscopy and microanalysis |
Abbreviated Journal |
Microsc Microanal |
| Volume |
18 |
Issue |
2 |
Pages |
336-342 |
| Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
| Abstract |
The charge-coupled devices used in electron microscopy are coated with a scintillating crystal that gives rise to a severe modulation transfer function (MTF). Exact knowledge of the MTF is imperative for a good correspondence between image simulation and experiment. We present a practical method to measure the MTF above the Nyquist frequency from the beam blocker's shadow image. The image processing has been fully automated and the program is made public. The method is successfully tested on three cameras with various beam blocker shapes. |
| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
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Place of Publication |
Cambridge, Mass. |
Editor |
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| Language |
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Wos |
000302084700011 |
Publication Date |
2012-02-14 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
1431-9276;1435-8115; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
1.891 |
Times cited |
15 |
Open Access |
|
| Notes |
Fwo |
Approved |
Most recent IF: 1.891; 2012 IF: 2.495 |
| Call Number |
UA @ lucian @ c:irua:96557 |
Serial |
1297 |
| Permanent link to this record |
| |
|
| |
| Author |
van den Broek, W.; Rosenauer, A.; Goris, B.; Martinez, G.T.; Bals, S.; Van Aert, S.; van Dyck, D. |
| Title |
Correction of non-linear thickness effects in HAADF STEM electron tomography |
Type |
A1 Journal article |
| Year |
2012 |
Publication |
Ultramicroscopy |
Abbreviated Journal |
Ultramicroscopy |
| Volume |
116 |
Issue |
|
Pages |
8-12 |
| Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
| Abstract |
In materials science, high angle annular dark field scanning transmission electron microscopy is often used for tomography at the nanometer scale. In this work, it is shown that a thickness dependent, non-linear damping of the recorded intensities occurs. This results in an underestimated intensity in the interior of reconstructions of homogeneous particles, which is known as the cupping artifact. In this paper, this non-linear effect is demonstrated in experimental images taken under common conditions and is reproduced with a numerical simulation. Furthermore, an analytical derivation shows that these non-linearities can be inverted if the imaging is done quantitatively, thus preventing cupping in the reconstruction. |
| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
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Place of Publication |
Amsterdam |
Editor |
|
| Language |
|
Wos |
000304473700002 |
Publication Date |
2012-03-09 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0304-3991; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
2.843 |
Times cited |
67 |
Open Access |
|
| Notes |
Fwo |
Approved |
Most recent IF: 2.843; 2012 IF: 2.470 |
| Call Number |
UA @ lucian @ c:irua:96558 |
Serial |
518 |
| Permanent link to this record |
| |
|
| |
| Author |
Wang, A.; Chen, F.R.; Van Aert, S.; van Dyck, D. |
| Title |
Direct structure inversion from exit waves : part 2 : a practical example |
Type |
A1 Journal article |
| Year |
2012 |
Publication |
Ultramicroscopy |
Abbreviated Journal |
Ultramicroscopy |
| Volume |
116 |
Issue |
|
Pages |
77-85 |
| Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
| Abstract |
This paper is the second part of a two-part paper on direct structure inversion from exit waves. In the first part, a method has been proposed to quantitatively determine structure parameters with atomic resolution such as atom column positions, surface profile and the number of atoms in the atom columns. In this part, the theory will be demonstrated by means of a Au[110] exit wave reconstructed from a set of focal-series images. The procedures to analyze the experimentally reconstructed exit wave in terms of quantitative structure information are described in detail. |
| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
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Place of Publication |
Amsterdam |
Editor |
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| Language |
|
Wos |
000304473700011 |
Publication Date |
2012-03-28 |
| Series Editor |
|
Series Title |
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Abbreviated Series Title |
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| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0304-3991; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
2.843 |
Times cited |
8 |
Open Access |
|
| Notes |
Fwo |
Approved |
Most recent IF: 2.843; 2012 IF: 2.470 |
| Call Number |
UA @ lucian @ c:irua:96660 |
Serial |
724 |
| Permanent link to this record |
| |
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| |
| Author |
Van Aert, S. |
| Title |
Statistical parameter estimation theory : a tool for quantitative electron microscopy |
Type |
H1 Book chapter |
| Year |
2012 |
Publication |
|
Abbreviated Journal |
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| Volume |
|
Issue |
|
Pages |
281-309 |
| Keywords |
H1 Book chapter; Electron microscopy for materials research (EMAT) |
| Abstract |
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| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
Wiley-VCH |
Place of Publication |
Weinheim |
Editor |
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| Language |
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Wos |
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Publication Date |
0000-00-00 |
| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
|
ISBN |
978-3-527-31706-6 |
Additional Links |
UA library record |
| Impact Factor |
|
Times cited |
|
Open Access |
|
| Notes |
|
Approved |
Most recent IF: NA |
| Call Number |
UA @ lucian @ c:irua:96693 |
Serial |
3159 |
| Permanent link to this record |
| |
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| |
| Author |
Müller-Caspary, K.; Grieb, T.; Müßener, J.; Gauquelin, N.; Hille, P.; Schörmann, J.; Verbeeck, J.; Van Aert, S.; Eickhoff, M.; Rosenauer, A. |
| Title |
Electrical Polarization in AlN/GaN Nanodisks Measured by Momentum-Resolved 4D Scanning Transmission Electron Microscopy |
Type |
A1 Journal article |
| Year |
2019 |
Publication |
Physical review letters |
Abbreviated Journal |
Phys Rev Lett |
| Volume |
122 |
Issue |
10 |
Pages |
106102 |
| Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| Abstract |
We report the mapping of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures at unit cell resolution as a key for the correlation of optical and structural phenomena in semiconductor optoelectronics. Momentum-resolved aberration-corrected scanning transmission electron microscopy is employed as a new imaging mode that simultaneously provides four-dimensional data in real and reciprocal space. We demonstrate how internal mesoscale and atomic electric fields can be separated in an experiment, which is verified by comprehensive dynamical simulations of multiple electron scattering. A mean difference of 5.3 +- 1.5 MV/cm is found for the polarization-induced electric fields in AlN and GaN, being in accordance with dedicated simulations and photoluminescence measurements in previous publications. |
| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
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Place of Publication |
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Editor |
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| Language |
|
Wos |
000461067700007 |
Publication Date |
2019-03-11 |
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0031-9007 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| Impact Factor |
8.462 |
Times cited |
26 |
Open Access |
OpenAccess |
| Notes |
The authors gratefully acknowledge the help of Natalie Claes for analyzing the EDX data. K. M.-C. acknowledges funding from the Initiative and Network Fund of the Helmholtz Association within the Helmholtz Young Investigator Group moreSTEM under Contract No. VHNG- 1317 at Forschungszentrum Jülich in Germany. The direct electron detector (Medipix3, Quantum Detectors) was funded by the Hercules fund from the Flemish Government. N. G. and J. V. acknowledge funding from the Geconcentreerde Onderzoekacties project Solarpaint of the University of Antwerp. T. G. and A. R. acknowledge support from the Deutsche Forschungsgemeinschaft (Germany) under Contract No. RO2057/8-3. This work also received funding from the European Research Council under the European Union’s Horizon 2020 research and innovation programme (Contract No. 770887). The authors acknowledge financial support from the Research Foundation Flanders (FWO, Belgium) through project funding (G.0368.15N).; Helmholtz Association, VH-NG-1317 ; Forschungszentrum Jülich; Flemish Government; Universiteit Antwerpen; Deutsche Forschungsgemeinschaft, RO2057/8-3 ; H2020 European Research Council, 770887 ; Fonds Wetenschappelijk Onderzoek, G.0368.15N ; |
Approved |
Most recent IF: 8.462 |
| Call Number |
UA @ lucian @UA @ admin @ c:irua:158120 |
Serial |
5157 |
| Permanent link to this record |
