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	Author	Milat, O.; Van Tendeloo, G.; Amelinckx, S.; Wright, A.J.; Greaves, C.
	Title	Effect of the substitution Ba\leftrightarrow Sr on the Ga-1222 superstructure : an electron diffraction study			Type	A1 Journal article
	Year	1995	Publication	Chemistry of materials	Abbreviated Journal	Chem Mater
	Volume	7	Issue	9	Pages	1709-1715
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The superstructure of the RE(2)(Sr0.85-xBaxNd0.15)(2)GaCU2O9 compound is found to change significantly with increasing substitution of Ba for Sr. Most of the changes take place in the (Sr0.85-xBaxNd0.15)O-GaO-(Sr0.85-xBaxNd0.15)O lamella, the rest of the basic structure being hardly affected. The structural changes for O less than or equal to x less than or equal to 0.65 are studied by electron diffraction. The arrangement of the chains of GaO4 tetrahedra in the Ba-free compound becomes disordered at x > 0.25. At x similar to 0.65 a rearrangement of the chains in the GaO layers takes place; they form a meandering arrangement, which can be described on a 4a(p) x 2a(p) x c(p) superlattice. This rearrangement is accompanied by ordering of Ba and Sr atoms in the adjacent (ST0.85-xBaxNd0.15)O layers. A simple scheme is proposed to explain the influence of the substitution of Ba for Sr on the linking of the GaO4 tetrahedra and on the geometry of the ''chains'' in the GaO layer.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Washington, D.C.	Editor
	Language		Wos	A1995RW21200021	Publication Date	2005-03-08
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0897-4756;1520-5002;	ISBN		Additional Links	UA library record; WoS full record
	Impact Factor	8.354	Times cited		Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:13326			Serial	850
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	Author	Huvé, M.; Van Tendeloo, G.; Amelinckx, S.; Hervieu, M.; Raveau, B.
	Title	Structural aspects of modulated superconducting oxides: application to Hg_1-xTl_xSr_4-yBa_yCu₂CO₃O_7-\delta			Type	A1 Journal article
	Year	1995	Publication	Journal of solid state chemistry	Abbreviated Journal	J Solid State Chem
	Volume	120	Issue		Pages	332-342
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	London	Editor
	Language		Wos	A1995TN20700018	Publication Date	2002-10-07
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0022-4596;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.133	Times cited	2	Open Access
	Notes				Approved
	Call Number	UA @ lucian @ c:irua:13327			Serial	3209
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	Author	Martin, C.; Hervieu, M.; Van Tendeloo, G.; Goutenoire, F.; Michel, C.; Maignan, A.; Raveau, B.
	Title	A mercury based cuprate with the “2212” structure: Hg_2-x(Cu,Pr)_xBa₂PrCu₂O_8-\delta			Type	A1 Journal article
	Year	1995	Publication	Solid state communications	Abbreviated Journal	Solid State Commun
	Volume	93	Issue	1	Pages	53-56
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York, N.Y.	Editor
	Language		Wos	A1995PW08800013	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0038-1098	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.897	Times cited	6	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:13761			Serial	1995
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	Author	Bogaerts, A.; Gijbels, R.
	Title	Modelling of a direct current glow discharge: combined models for the electrons, argon ions and metastables			Type	P3 Proceeding
	Year	1995	Publication		Abbreviated Journal
	Volume		Issue		Pages	292-295
	Keywords	P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Société française du vide	Place of Publication	S.l.	Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record
	Impact Factor		Times cited		Open Access
	Notes				Approved	COMPUTER SCIENCE, INTERDISCIPLINARY 11/104 Q1 # PHYSICS, MATHEMATICAL 1/53 Q1 #
	Call Number	UA @ lucian @ c:irua:82295			Serial	2151
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	Author	Oleshko, V.; Gijbels, R.; Jacob, W.; Lakiere, F.; van Daele, A.; Silaev, E.; Kaplun, L.
	Title	Characterization of double structure tabular microcrystals of silver halide emulsions by means of electron energy-loss spectroscopy, zero-loss electron spectroscopic imaging and energy dispersive X-ray microanalysis			Type	A1 Journal article
	Year	1995	Publication	Microscopy, microanalysis, microstructures	Abbreviated Journal
	Volume	6	Issue	1	Pages	79-88
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Ivry	Editor
	Language		Wos	A1995QY30300008	Publication Date	2003-08-13
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1154-2799;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	7	Open Access
	Notes				Approved
	Call Number	UA @ lucian @ c:irua:8457			Serial	322
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	Author	Goessens, C.; Schryvers, D.; van Landuyt, J.; Geuens, I.; Gijbels, R.; Jacob, W.; de Keyzer, R.
	Title	A temperature study of mixed AgBr-AgBrI tabular crystals			Type	H1 Book chapter
	Year	1995	Publication		Abbreviated Journal
	Volume		Issue		Pages	70-76
	Keywords	H1 Book chapter; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Hawaii	Editor
	Language		Wos	A1995RY19900011	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume	39	Series Issue	1	Edition
	ISSN		ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	3	Open Access
	Notes				Approved	PHYSICS, APPLIED 47/145 Q2 #
	Call Number	UA @ lucian @ c:irua:8459			Serial	3501
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	Author	Adriaens, A.; van Nevel, L.; Van 't dack, L.; de Bièvre, P.; Adams, F.; Gijbels, R.
	Title	The use of surface analysis techniques and isotope mass spectrometry for the study of water-rock interactions of interest in hot-dry rock technology			Type	P3 Proceeding
	Year	1995	Publication		Abbreviated Journal
	Volume		Issue		Pages	2541-2544
	Keywords	P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Auckland	Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record
	Impact Factor		Times cited		Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:8942			Serial	3824
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	Author	Hai; Studart; Peeters, F.M.
	Title	Electron-mobility in 2 coupled delta-layers			Type	A1 Journal article
	Year	1995	Publication	Physical review : B : condensed matter and materials physics	Abbreviated Journal	Phys Rev B
	Volume	52	Issue	15	Pages	11273-11276
	Keywords	A1 Journal article; Condensed Matter Theory (CMT)
	Abstract	The low-temperature transport properties are studied for electrons confined in delta-doped semiconductor structures with two sheets in parallel. The subband quantum mobility and transport mobility are calculated numerically for the Si delta-doped GaAs systems. The effect of coupling of the two delta layers on the electron transport is investigated. Our calculations are in good agreement with experimental results.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Lancaster, Pa	Editor
	Language		Wos	A1995TA85200092	Publication Date	2002-07-27
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0163-1829;1095-3795;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.736	Times cited	25	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:95343			Serial	976
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	Author	Hai; Studart; Peeters, F.M.
	Title	Multisubband electron-transport in delta-doped semiconductor systems			Type	A1 Journal article
	Year	1995	Publication	Physical review : B : condensed matter and materials physics	Abbreviated Journal	Phys Rev B
	Volume	52	Issue	11	Pages	8363-8371
	Keywords	A1 Journal article; Condensed Matter Theory (CMT)
	Abstract	The electron transport properties in delta-doped semiconductor systems-are studied. The subband electronic structure of the delta-doped system is obtained by solving the coupled Schrodinger and Poisson equations. The screening of the quasi-two-dimensional electron gas is taken into account for the ionized impurity scattering through the matrix dielectric function within the random-phase approximation. The quantum and transport mobilities are calculated numerically as a function of the total electron density and the width of the doped layer at zero temperature. The intersubband scattering and the effect of empty subbands above the Fermi level on the electron mobilities are investigated. The calculated mobilities are in reasonable agreement with the available experimental results.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Lancaster, Pa	Editor
	Language		Wos	A1995RV81800091	Publication Date	2002-07-27
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0163-1829;1095-3795;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.736	Times cited	67	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:95353			Serial	2243
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	Author	Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A.
	Title	Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope			Type	A1 Journal article
	Year	1995	Publication	Materials science and technology	Abbreviated Journal	Mater Sci Tech-Lond
	Volume	11	Issue	11	Pages	1194-1202
	Keywords	A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
	Abstract	Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials.
	Address
	Corporate Author				Thesis
	Publisher	Inst Materials	Place of Publication	London	Editor
	Language		Wos	A1995TQ95100016	Publication Date	2014-01-09
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0267-0836;1743-2847;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	0.995	Times cited	7	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:95911			Serial	2654
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	Author	Van Bockstal, L.; Mahy, M.; de Keyser, A.; Hoeks, W.; Herlach, F.; Peeters, F.M.; Van de Graaf, W.; Borghs, G.
	Title	Cyclotron-resonance of 2d electrons at Si-\delta-doped InSb layers grown on GaAs			Type	A1 Journal article
	Year	1995	Publication	Physica: B : condensed matter	Abbreviated Journal	Physica B
	Volume	211	Issue	1-4	Pages	466-469
	Keywords	A1 Journal article; Condensed Matter Theory (CMT)
	Abstract	Cyclotron resonance (CR) of the electrons accumulated at sheets with heavy Si doping in InSb were observed using far infrared radiation. The angular dependence of the CR follows closely the 1/cos theta behaviour with some small deviations at high angles attributed to coupling between subbands. From the effective mass of the lowest subband, which is found to be 0.027m(o), the bottom of the lowest subband was determined to lie 125 meV below the Fermi level.
	Address
	Corporate Author				Thesis
	Publisher	Elsevier	Place of Publication	Amsterdam	Editor
	Language		Wos	A1995RD54400121	Publication Date	2003-05-01
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0921-4526;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.319	Times cited	2	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:95914			Serial	601
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	Author	Vasiliev, A.L.; Van Tendeloo, G.; Boikov, Y.; Olsson, E.; Ivanov, Z.; Claeson, T.; Kiselev, N.A.
	Title	Structural aspects of the combination of Si and YBa2Cu3O7-x			Type	A1 Journal article
	Year	1995	Publication	Institute of physics conference series	Abbreviated Journal
	Volume	146	Issue		Pages	333-336
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The microstructure of defects and interfaces as well as interfacial reactions of the YBa2Cu3O7-x (YBCO) thin films on Si or Si on sapphire with single Y-stabilized ZrO2 (YSZ), double CeO2/YSZ or triple MgO/CeO2/YSZ buffer layer has been characterized by transmission electron microscopy The complex buffer made it possible to prevent detrimental interdiffusion and to control the orientation of YBCO layers.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	A1995BE73Q00070	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0951-3248	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved
	Call Number	UA @ lucian @ c:irua:95922			Serial	3211
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	Author	van der Burgt, M.; Karavolas, V.C.; Peeters, F.M.; Singleton, J.; Nicholas, R.J.; Herlach, F.; Harris, J.J.; Van Hove, M.; Borghs, G.
	Title	Magnetotransport in a pseudomorphic GaAs/Ga_0.8In_0.2As/Ga_0.75Al_0.25As heterostructure with a Si \delta-doping layer			Type	A1 Journal article
	Year	1995	Publication	Physical review : B : condensed matter and materials physics	Abbreviated Journal	Phys Rev B
	Volume	52	Issue	16	Pages	12218-12231
	Keywords	A1 Journal article; Condensed Matter Theory (CMT)
	Abstract	Magnetotransport properties of a pseudomorphic GsAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T = 1.4 and 4.2 K. The structure studied consists of a Si delta layer parallel to a Ga0.8In0.2As quantum well (QW). The dark electron density of the structure is n(c) = 1.67 x 10(16) m(-2). By illumination the density can be increased up to a factor of 4; this way the second subband in the Ga0.08In0.2As QW can become populated as well as the Si delta layer. The presence of electrons in the delta layer results in drastic changes in the transport data, especially at magnetic fields beyond 30 T. The phenomena observed are interpreted as (i) magnetic freeze-out of carriers in the delta layer when a low density of electrons is present in the delta layer, and (ii) quantization of the electron motion in the two-dimensional electron gases in both the Ga0.8In0.2As QW and the Si delta layer in the case of high densities. These conclusions are corroborated by the numerical results of our theoretical model. We obtain satisfactory agreement between model and experiment.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	A1995TB96600102	Publication Date	2002-07-27
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0163-1829;1095-3795;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.736	Times cited	43	Open Access
	Notes				Approved	PHYSICS, APPLIED 28/145 Q1 #
	Call Number	UA @ lucian @ c:irua:99708			Serial	1933
Permanent link to this record