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Author Milat, O.; Van Tendeloo, G.; Amelinckx, S.; Wright, A.J.; Greaves, C.
Title Effect of the substitution Ba\leftrightarrow Sr on the Ga-1222 superstructure : an electron diffraction study Type A1 Journal article
Year 1995 Publication Chemistry of materials Abbreviated Journal Chem Mater
Volume 7 Issue 9 Pages 1709-1715
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The superstructure of the RE(2)(Sr0.85-xBaxNd0.15)(2)GaCU2O9 compound is found to change significantly with increasing substitution of Ba for Sr. Most of the changes take place in the (Sr0.85-xBaxNd0.15)O-GaO-(Sr0.85-xBaxNd0.15)O lamella, the rest of the basic structure being hardly affected. The structural changes for O less than or equal to x less than or equal to 0.65 are studied by electron diffraction. The arrangement of the chains of GaO4 tetrahedra in the Ba-free compound becomes disordered at x > 0.25. At x similar to 0.65 a rearrangement of the chains in the GaO layers takes place; they form a meandering arrangement, which can be described on a 4a(p) x 2a(p) x c(p) superlattice. This rearrangement is accompanied by ordering of Ba and Sr atoms in the adjacent (ST0.85-xBaxNd0.15)O layers. A simple scheme is proposed to explain the influence of the substitution of Ba for Sr on the linking of the GaO4 tetrahedra and on the geometry of the ''chains'' in the GaO layer.
Address
Corporate Author Thesis
Publisher Place of Publication Washington, D.C. Editor
Language Wos A1995RW21200021 Publication Date 2005-03-08
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0897-4756;1520-5002; ISBN Additional Links UA library record; WoS full record
Impact Factor 8.354 Times cited Open Access
Notes Approved no
Call Number (up) UA @ lucian @ c:irua:13326 Serial 850
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Author Huvé, M.; Van Tendeloo, G.; Amelinckx, S.; Hervieu, M.; Raveau, B.
Title Structural aspects of modulated superconducting oxides: application to Hg1-xTlxSr4-yBayCu2CO3O7-\delta Type A1 Journal article
Year 1995 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem
Volume 120 Issue Pages 332-342
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos A1995TN20700018 Publication Date 2002-10-07
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.133 Times cited 2 Open Access
Notes Approved
Call Number (up) UA @ lucian @ c:irua:13327 Serial 3209
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Author Martin, C.; Hervieu, M.; Van Tendeloo, G.; Goutenoire, F.; Michel, C.; Maignan, A.; Raveau, B.
Title A mercury based cuprate with the “2212” structure: Hg2-x(Cu,Pr)xBa2PrCu2O8-\delta Type A1 Journal article
Year 1995 Publication Solid state communications Abbreviated Journal Solid State Commun
Volume 93 Issue 1 Pages 53-56
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos A1995PW08800013 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0038-1098 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.897 Times cited 6 Open Access
Notes Approved no
Call Number (up) UA @ lucian @ c:irua:13761 Serial 1995
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Author Bogaerts, A.; Gijbels, R.
Title Modelling of a direct current glow discharge: combined models for the electrons, argon ions and metastables Type P3 Proceeding
Year 1995 Publication Abbreviated Journal
Volume Issue Pages 292-295
Keywords P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Société française du vide Place of Publication S.l. Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved COMPUTER SCIENCE, INTERDISCIPLINARY 11/104 Q1 # PHYSICS, MATHEMATICAL 1/53 Q1 #
Call Number (up) UA @ lucian @ c:irua:82295 Serial 2151
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Author Oleshko, V.; Gijbels, R.; Jacob, W.; Lakiere, F.; van Daele, A.; Silaev, E.; Kaplun, L.
Title Characterization of double structure tabular microcrystals of silver halide emulsions by means of electron energy-loss spectroscopy, zero-loss electron spectroscopic imaging and energy dispersive X-ray microanalysis Type A1 Journal article
Year 1995 Publication Microscopy, microanalysis, microstructures Abbreviated Journal
Volume 6 Issue 1 Pages 79-88
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Ivry Editor
Language Wos A1995QY30300008 Publication Date 2003-08-13
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1154-2799; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 7 Open Access
Notes Approved
Call Number (up) UA @ lucian @ c:irua:8457 Serial 322
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Author Goessens, C.; Schryvers, D.; van Landuyt, J.; Geuens, I.; Gijbels, R.; Jacob, W.; de Keyzer, R.
Title A temperature study of mixed AgBr-AgBrI tabular crystals Type H1 Book chapter
Year 1995 Publication Abbreviated Journal
Volume Issue Pages 70-76
Keywords H1 Book chapter; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Hawaii Editor
Language Wos A1995RY19900011 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume 39 Series Issue 1 Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 3 Open Access
Notes Approved PHYSICS, APPLIED 47/145 Q2 #
Call Number (up) UA @ lucian @ c:irua:8459 Serial 3501
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Author Adriaens, A.; van Nevel, L.; Van 't dack, L.; de Bièvre, P.; Adams, F.; Gijbels, R.
Title The use of surface analysis techniques and isotope mass spectrometry for the study of water-rock interactions of interest in hot-dry rock technology Type P3 Proceeding
Year 1995 Publication Abbreviated Journal
Volume Issue Pages 2541-2544
Keywords P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Auckland Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved no
Call Number (up) UA @ lucian @ c:irua:8942 Serial 3824
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Author Hai; Studart; Peeters, F.M.
Title Electron-mobility in 2 coupled delta-layers Type A1 Journal article
Year 1995 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 52 Issue 15 Pages 11273-11276
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The low-temperature transport properties are studied for electrons confined in delta-doped semiconductor structures with two sheets in parallel. The subband quantum mobility and transport mobility are calculated numerically for the Si delta-doped GaAs systems. The effect of coupling of the two delta layers on the electron transport is investigated. Our calculations are in good agreement with experimental results.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos A1995TA85200092 Publication Date 2002-07-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.736 Times cited 25 Open Access
Notes Approved no
Call Number (up) UA @ lucian @ c:irua:95343 Serial 976
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Author Hai; Studart; Peeters, F.M.
Title Multisubband electron-transport in delta-doped semiconductor systems Type A1 Journal article
Year 1995 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 52 Issue 11 Pages 8363-8371
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The electron transport properties in delta-doped semiconductor systems-are studied. The subband electronic structure of the delta-doped system is obtained by solving the coupled Schrodinger and Poisson equations. The screening of the quasi-two-dimensional electron gas is taken into account for the ionized impurity scattering through the matrix dielectric function within the random-phase approximation. The quantum and transport mobilities are calculated numerically as a function of the total electron density and the width of the doped layer at zero temperature. The intersubband scattering and the effect of empty subbands above the Fermi level on the electron mobilities are investigated. The calculated mobilities are in reasonable agreement with the available experimental results.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos A1995RV81800091 Publication Date 2002-07-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.736 Times cited 67 Open Access
Notes Approved no
Call Number (up) UA @ lucian @ c:irua:95353 Serial 2243
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Author Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A.
Title Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope Type A1 Journal article
Year 1995 Publication Materials science and technology Abbreviated Journal Mater Sci Tech-Lond
Volume 11 Issue 11 Pages 1194-1202
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials.
Address
Corporate Author Thesis
Publisher Inst Materials Place of Publication London Editor
Language Wos A1995TQ95100016 Publication Date 2014-01-09
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0267-0836;1743-2847; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 0.995 Times cited 7 Open Access
Notes Approved no
Call Number (up) UA @ lucian @ c:irua:95911 Serial 2654
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Author Van Bockstal, L.; Mahy, M.; de Keyser, A.; Hoeks, W.; Herlach, F.; Peeters, F.M.; Van de Graaf, W.; Borghs, G.
Title Cyclotron-resonance of 2d electrons at Si-\delta-doped InSb layers grown on GaAs Type A1 Journal article
Year 1995 Publication Physica: B : condensed matter Abbreviated Journal Physica B
Volume 211 Issue 1-4 Pages 466-469
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Cyclotron resonance (CR) of the electrons accumulated at sheets with heavy Si doping in InSb were observed using far infrared radiation. The angular dependence of the CR follows closely the 1/cos theta behaviour with some small deviations at high angles attributed to coupling between subbands. From the effective mass of the lowest subband, which is found to be 0.027m(o), the bottom of the lowest subband was determined to lie 125 meV below the Fermi level.
Address
Corporate Author Thesis
Publisher Elsevier Place of Publication Amsterdam Editor
Language Wos A1995RD54400121 Publication Date 2003-05-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.319 Times cited 2 Open Access
Notes Approved no
Call Number (up) UA @ lucian @ c:irua:95914 Serial 601
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Author Vasiliev, A.L.; Van Tendeloo, G.; Boikov, Y.; Olsson, E.; Ivanov, Z.; Claeson, T.; Kiselev, N.A.
Title Structural aspects of the combination of Si and YBa2Cu3O7-x Type A1 Journal article
Year 1995 Publication Institute of physics conference series Abbreviated Journal
Volume 146 Issue Pages 333-336
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The microstructure of defects and interfaces as well as interfacial reactions of the YBa2Cu3O7-x (YBCO) thin films on Si or Si on sapphire with single Y-stabilized ZrO2 (YSZ), double CeO2/YSZ or triple MgO/CeO2/YSZ buffer layer has been characterized by transmission electron microscopy The complex buffer made it possible to prevent detrimental interdiffusion and to control the orientation of YBCO layers.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos A1995BE73Q00070 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0951-3248 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved
Call Number (up) UA @ lucian @ c:irua:95922 Serial 3211
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Author van der Burgt, M.; Karavolas, V.C.; Peeters, F.M.; Singleton, J.; Nicholas, R.J.; Herlach, F.; Harris, J.J.; Van Hove, M.; Borghs, G.
Title Magnetotransport in a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si \delta-doping layer Type A1 Journal article
Year 1995 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 52 Issue 16 Pages 12218-12231
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Magnetotransport properties of a pseudomorphic GsAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T = 1.4 and 4.2 K. The structure studied consists of a Si delta layer parallel to a Ga0.8In0.2As quantum well (QW). The dark electron density of the structure is n(c) = 1.67 x 10(16) m(-2). By illumination the density can be increased up to a factor of 4; this way the second subband in the Ga0.08In0.2As QW can become populated as well as the Si delta layer. The presence of electrons in the delta layer results in drastic changes in the transport data, especially at magnetic fields beyond 30 T. The phenomena observed are interpreted as (i) magnetic freeze-out of carriers in the delta layer when a low density of electrons is present in the delta layer, and (ii) quantization of the electron motion in the two-dimensional electron gases in both the Ga0.8In0.2As QW and the Si delta layer in the case of high densities. These conclusions are corroborated by the numerical results of our theoretical model. We obtain satisfactory agreement between model and experiment.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos A1995TB96600102 Publication Date 2002-07-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.736 Times cited 43 Open Access
Notes Approved PHYSICS, APPLIED 28/145 Q1 #
Call Number (up) UA @ lucian @ c:irua:99708 Serial 1933
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