“Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations”. Pham A-T, Sorée B, Magnus W, Jungemann C, Meinerzhagen B, Pourtois G, Solid state electronics 71, 30 (2012). http://doi.org/10.1016/j.sse.2011.10.016
Abstract: Simulation results of electrostatics in Si cylindrical junctionless nanowire transistors with a homogenous channel are presented. Junctionless transistors including strain and arbitrary crystallographic orientations are studied. Size quantization effects are simulated by self-consistent solutions of the Poisson and Schrodinger equations. The 6 x 6 k.p method is employed for the calculation of the valence subband structure in a junctionless nanowire pFET. The influence of stress/strain and crystallographic channel orientation on to the electrostatics in terms of subband structure, charge density, and C-V curve is systematically studied. (C) 2011 Elsevier Ltd. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.58
Times cited: 2
DOI: 10.1016/j.sse.2011.10.016
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“Modeling the impact of junction angles in tunnel field-effect transistors”. Kao K-H, Verhulst AS, Vandenberghe WG, Sorée B, Groeseneken G, De Meyer K, Solid state electronics 69, 31 (2012). http://doi.org/10.1016/j.sse.2011.10.032
Abstract: We develop an analytical model for a tunnel field-effect transistor (TFET) with a tilted source junction angle. The tunnel current is derived by using circular tunnel paths along the electric field. The analytical model predicts that a smaller junction angle improves the TFET performance, which is supported by device simulations. An analysis is also made based on straight tunnel paths and tunnel paths corresponding to the trajectory of a classical particle. In all the aforementioned cases, the same conclusions are obtained. A TFET configuration with an encroaching polygon source junction is studied to analyze the junction angle dependence at the smallest junction angles. The improvement of the subthreshold swing (SS) with decreasing junction angle can be achieved by using thinner effective oxide thickness, smaller band gap material and longer encroaching length of the encroaching junction. A TFET with a smaller junction angle on the source side also has an innate immunity against the degradation of the fringing field from the gate electrode via a high-k spacer. A large junction angle on the drain side can suppress the unwanted ambipolar current of TFETs. (c) 2011 Elsevier Ltd. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.58
Times cited: 9
DOI: 10.1016/j.sse.2011.10.032
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“Size effects in the transport properties of thin Sc1-xErxAs epitaxial layers buried in GaAs”. Bogaerts R, de Keyser A, Herlach F, Peeters FM, DeRosa F, Palmstrøm CJ, Brehmer D, Allen SJ, Solid state electronics 37, 789 (1994). http://doi.org/10.1016/0038-1101(94)90299-2
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.504
Times cited: 4
DOI: 10.1016/0038-1101(94)90299-2
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“Mini-band dispersion, critical points, and impurity bands in superlattices: an infrared absorption study”. Helm M, Hilber W, Fromherz T, Peeters FM, Alavi K, Pathak RN, Solid state electronics 37, 1277 (1994). http://doi.org/10.1016/0038-1101(94)90407-3
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.504
Times cited: 2
DOI: 10.1016/0038-1101(94)90407-3
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“Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs : CV characteristics, mobility, and ON current”. Pham A-T, Zhao Q-T, Jungemann C, Meinerzhagen B, Mantl S, Sorée B, Pourtois G, Solid state electronics 65-66, 64 (2011). http://doi.org/10.1016/j.sse.2011.06.021
Abstract: Strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs are investigated including important aspects like CV characteristics, mobility, and ON current. The simulations are based on the self-consistent solution of 6 × 6 k · p Schrödinger Equation, multi subband Boltzmann Transport Equation and Poisson Equation, and capture size quantization, strain, crystallographic orientation, and SiGe alloy effects on a solid physical basis. The simulation results are validated by comparison with different experimental data sources. The simulation results show that the strained SiGe HOI PMOSFET with (1 1 0) surface orientation has a higher gate capacitance and a much higher mobility and ON current compared to a similar device with the traditional (0 0 1) surface orientation.
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.58
Times cited: 2
DOI: 10.1016/j.sse.2011.06.021
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“Resonant magneto-polarons in strongly-coupled superlattices”. Peeters FM, Shi JM, Devreese JT, Cheng J-P, McCombe BD, Schaff W, Solid state electronics 37, 1217 (1994). http://doi.org/10.1016/0038-1101(94)90393-X
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 1.504
Times cited: 5
DOI: 10.1016/0038-1101(94)90393-X
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“Interplay of 2D and 3D charge carriers in Si-δ-doped InSb layers grown epitaxially on GaAs”. de Keyser A, Bogaerts R, Karavolas VC, van Bockstal L, Herlach F, Peeters FM, van de Graaf W, Borghs G, Solid state electronics 40, 395 (1996). http://doi.org/10.1016/0038-1101(96)84617-X
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.504
Times cited: 2
DOI: 10.1016/0038-1101(96)84617-X
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“Phonon-assisted Zener tunneling in a p-n diode silicon nanowire”. Carrillo-Nunez H, Magnus W, Vandenberghe WG, Sorée B, Peeters FM, Solid state electronics 79, 196 (2013). http://doi.org/10.1016/j.sse.2012.09.004
Abstract: The Zener tunneling current flowing through a biased, abrupt p-n junction embedded in a cylindrical silicon nanowire is calculated. As the band gap becomes indirect for sufficiently thick wires, Zener tunneling and its related transitions between the valence and conduction bands are mediated by short-wavelength phonons interacting with mobile electrons. Therefore, not only the high electric field governing the electrons in the space-charge region but also the transverse acoustic (TA) and transverse optical (TO) phonons have to be incorporated in the expression for the tunneling current. The latter is also affected by carrier confinement in the radial direction and therefore we have solved the Schrodinger and Poisson equations self-consistently within the effective mass approximation for both conduction and valence band electrons. We predict that the tunneling current exhibits a pronounced dependence on the wire radius, particularly in the high-bias regime. (C) 2012 Elsevier Ltd. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.58
Times cited: 2
DOI: 10.1016/j.sse.2012.09.004
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“Image-force barrier lowering in top- and side-contacted two-dimensional materials”. Deylgat E, Chen E, Fischetti MV, Sorée B, Vandenberghe WG, Solid state electronics 198, 108458 (2022). http://doi.org/10.1016/J.SSE.2022.108458
Abstract: We compare the image-force barrier lowering (IFBL) and calculate the resulting contact resistance for four different metal-dielectric-two-dimensional (2D) material configurations. We analyze edge contacts in three different geometries (a homogeneous dielectric throughout, including the 2D layer; a homogeneous dielectric surrounding the 2D layer, both ungated and back gated) and also a top-contact assuming a homogeneous dielectric. The image potential energy of each configuration is determined and added to the Schottky energy barrier which is calculated assuming a textbook Schottky potential. For each configuration, the contact resistivity is calculated using the WKB approximation and the effective mass approximation using either SiO2 or HfO2 as the surrounding dielectric. We obtain the lowest contact resistance of 1 k Omega mu m by n-type doping an edge contacted transition metal-dichalcogenide (TMD) monolayer, sandwiched between SiO2 dielectric, with similar to 1012 cm-2 donor atoms. When this optimal configuration is used, the contact resistance is lowered by a factor of 50 compared to the situation when the IFBL is not considered.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.7
DOI: 10.1016/J.SSE.2022.108458
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