“Laser induced phase transition in iron thin films”. Teodorescu VS, Mihailescu IN, Dinescu M, Chitica N, Nistor LC, van Landuyt J, Barborica A, Journal de physique: 3: applied physics, materials science, fluids, plasma and instrumentation 4, 127 (1994). http://doi.org/10.1051/jp4:1994427
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
DOI: 10.1051/jp4:1994427
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“Defects and phase transformation in monclinic natural hollandite: BaxMn8O16”. Nistor LC, Van Tendeloo G, Amelinckx S, Journal of solid state chemistry 109, 152 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.133
Times cited: 13
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“Electron microscopic study of long period ordering in complex oxides”. Amelinckx S, Nistor LC, Van Tendeloo G s.l., page 1 (1994).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“High resolution electron microscopic study of Ba7Sc6Al2O19 and related phases”. Shpanchenko RV, Nistor L, Van Tendeloo G, Amelinckx S, Antipov EV, Kovba LM, Journal of solid state chemistry 113, 193 (1994). http://doi.org/10.1006/jssc.1994.1359
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.133
Times cited: 3
DOI: 10.1006/jssc.1994.1359
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“Atomic imaging of cage like structures of silicon”. Nistor L, Van Tendeloo G, Amelinckx S, Cros C, Physica status solidi: A: applied research 146, 119 (1994). http://doi.org/10.1002/pssa.2211460111
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 12
DOI: 10.1002/pssa.2211460111
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“Formation of diamond nanocrystals in laser-irradiated amorphous carbon films”. Nistor LC, van Landuyt J, Ralchenko VG, Kononenko TV, Obraztsova ED, Strelnitsky VE, International Conference on the New Diamond Science and Technology 4, 25 (1994)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines”. Teodorescu V, Nistor L, Bender H, Steegen A, Lauwers A, Maex K, van Landuyt J, Journal of applied physics 90, 167 (2001). http://doi.org/10.1063/1.1378812
Abstract: The formation of Ni silicides is studied by transmission electron microscopy during in situ heating experiments of 12 nm Ni layers on blanket silicon, or in patterned structures covered with a thin chemical oxide. It is shown that the first phase formed is the NiSi2 which grows epitaxially in pyramidal crystals. The formation of NiSi occurs quite abruptly around 400 degreesC when a monosilicide layer covers the disilicide grains and the silicon in between. The NiSi phase remains stable up to 800 degreesC, at which temperature the layer finally fully transforms to NiSi2. The monosilicide grains show different epitaxial relationships with the Si substrate. Ni2Si is never observed. (C) 2001 American Institute of Physics.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 97
DOI: 10.1063/1.1378812
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“Microstructural characterization of diamond films deposited on c-BN crystals”. Nistor L, Buschmann V, Ralchenko V, Dinca G, Vlasov I, van Landuyt J, Fuess H, Diamond and related materials
T2 –, 10th European Conference on Diamond, Diamond-Like Materials, Nitrides, and Silicon Carbide (Diamond 1999), SEP 12-17, 1999, PRAGUE, CZECH REPUBLIC 9, 269 (2000). http://doi.org/10.1016/S0925-9635(99)00246-0
Abstract: The morphology and structure of diamond films, deposited on cubic boron nitride (c-BN) crystals by microwave-plasma-enhanced chemical vapor deposition, is studied by high-resolution scanning electron microscopy and micro-Raman spectroscopy. The c-BN crystals, with sizes of 200 to 350 mu m and grown by a high-temperature/high-pressure technique, were embedded in a copper holder, and used as substrates in deposition runs of 15 min to 5 h. The nucleation centers for diamond appear as well-shaped cuboctahedral crystallites, having diameters of approximately 100 nm. With increasing deposition time the diamond crystallites grew larger, forming islands on the c-BN faces. In some cases, epitaxial growth was observed on the (111) c-BN faces where coalesced particles gave rise to very smooth regions. A number of diamond crystals with peculiar shapes are observed, such as a pseudo five-fold symmetry due to multiple twinning. Moreover, both randomly distributed carbon tubes, about 100 nn in diameter and 1 mu m in length, and spherically shaped features are observed in samples prepared under the typical conditions of diamond deposition, this effect being ascribed to the influence of plasma-sputtered copper contamination. Quite unusual diamond crystals with a deep, pyramidal-shaped hole in the middle grew on the copper substrate between the c-BN crystals. (C) 2000 Elsevier Science S.A. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.561
Times cited: 9
DOI: 10.1016/S0925-9635(99)00246-0
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“Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions”. Nistor LC, Nistor SV, Dinca G, Georgeoni P, van Landuyt J, Manfredotti C, Vittone E, Journal of physics : condensed matter 14, 10983 (2002). http://doi.org/10.1088/0953-8984/14/44/414
Abstract: High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp(3) bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 +/- 15 mJ m(-2) is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD diamond.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.649
Times cited: 7
DOI: 10.1088/0953-8984/14/44/414
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“The influence of the h-BN morphology and structure on the c-BN growth”. Nistor L, Teodorescu V, Ghica C, van Landuyt J, Dinca G, Georgeoni P, Diamond and related materials
T2 –, 11th European Conference on Diamond, Diamond-like Materials, Carbon, Nanotubes, Nitrides and Silicon Carbide (Diamond 2000), SEP 03-08, 2000, OPORTO, PORTUGAL 10, 1352 (2001). http://doi.org/10.1016/S0925-9635(00)00377-0
Abstract: The morphology and structure of hexagonal graphitic BN (h-BN) powders with graphitization indices GI <5, used as precursors for the synthesis of cubic BN (c-BN) crystals, has been investigated by transmission electron microscopy in diffraction contrast and high resolution. We show that besides the GI, which is a general parameter for controlling the structural quality of h-EN ponders, some other microstructural features strongly influence the synthesis of c-BN. In our opinion, the high reactivity of some h-BN powders results from the presence of some nucleation centers for c-BN, observed at the edges of the h-BN particles. They are formed by a rearrangement of the graphitic (0002) planes by bending back, joining in pairs and forming locally nanoarches (half nanotubes). In these particular places, the nature of bonding locally turns towards sp(3), as in the case of c-BN, (C) 2001 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.561
Times cited: 17
DOI: 10.1016/S0925-9635(00)00377-0
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“Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer”. Nistor L, Bender H, Vantomme A, Wu MF, van Landuyt J, O'Donnell KP, Martin R, Jacobs K, Moerman I, Applied physics letters 77, 507 (2000). http://doi.org/10.1063/1.127026
Abstract: We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In0.22Ga0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in the range of 1.5-3 nm. Such sizes are in very good agreement with calculations based on the luminescence spectra of this specimen. (C) 2000 American Institute of Physics. [S0003-6951(00)00930-X].
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 44
DOI: 10.1063/1.127026
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“In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates”. Ghica C, Nistor L, Bender H, Steegen A, Lauwers A, Maex K, van Landuyt J, Journal of materials research 16, 701 (2001). http://doi.org/10.1557/JMR.2001.0121
Abstract: The results of an in situ transmission electron microscopy study of the formation of Co-silicides on patterned (001) Si substrates are discussed. It is shown that the results of the in situ heating experiments agreed very well with the data based on standard rapid thermal annealing experiments. Fast heating rates resulted in better definition of the silicide lines. Also, better lines were obtained for samples that received already a low-temperature ex situ anneal. A Ti cap layer gave rise to a higher degree of epitaxy in the CoSi2 silicide.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.673
Times cited: 4
DOI: 10.1557/JMR.2001.0121
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“Ordering and defects in BanTaxTiyO3n ternary oxides”. Nistor L, Van Tendeloo G, Amelinckx S, Shpanchenko RV, van Landuyt J, Electron Microscopy 1994, Vols 2a And 2b: Applications In Materials Sciences , 869 (1994)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Gallium colloid formation during ion implantation of glass”. Hole DE, Townsend PD, Barton JD, Nistor LC, van Landuyt J, Journal of non-crystalline solids 180, 266 (1995). http://doi.org/10.1016/0022-3093(94)00477-3
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.766
Times cited: 34
DOI: 10.1016/0022-3093(94)00477-3
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“Structural studies on new ternary oxides Ba8Ta4Ti3O24 and Ba10Ta7.04Ti1.2O30”. Shpanchenko RV, Nistor L, Van Tendeloo G, van Landuyt J, Amelinckx S, Journal of solid state chemistry 114, 560 (1995). http://doi.org/10.1006/jssc.1995.1086
Abstract: The ternary oxides Ba8Ta4Ti3O24 and Ba10Ta7.04Ti1.2O30 were synthesized and their crystal structures and defects were studied by means of X-ray powder diffraction, electron diffraction, and high resolution electron microscopy. The crystal structure of Ba8Ta4Ti3O24 is based on the 8H (cchc)(2) close-packed stacking (a 10.0314 Angstrom, c = 18.869 Angstrom, SG P6(3)/mcm, Z = 3) and that of Ba10Ta7.04Ti1.2O30 and on the 10H (cchcc)(2) close-packed stacking (a = 5.7981 Angstrom, c = 23.755 Angstrom, SG P6(3)/mmc, Z = 1) of BaO3 layers. The structural refinements gave the following values for the R factors for Ba8Ta4Ti3O24 (Ba10Ta7.04Ti1.2O30) R(I) = 0.041 (0.039), R(P) = 0.108 (0.118), and R(wP) = 0.094 (0.099). The main feature of both structures is the presence of two types of face-sharing octahedra (FSO) with different occupancies by Ta atoms, Ti atoms, and vacancies, which results in the formation of a superstructure. It was shown that in the Ba8Ta4Ti3O24 structure these pairs of FSO occur in an ordered fashion and in the Ba10Ta7.04Ti1.2O30 structure in a disordered fashion. The existence of the wide range of solid solutions was shown to be also a consequence of the presence of one of the two types of face-sharing octahedra. (C) 1995 Academic Press, Inc,
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.133
Times cited: 23
DOI: 10.1006/jssc.1995.1086
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“Structural study of the new complex oxides Ba5-ySryR2-xAl2Zr1+xO13+x/2 (R=Gd-Lu, Y, Sc)”. Shpanchenko RV, Abakumov AM, Antipov EV, Nistor L, Van Tendeloo G, Amelinckx S, Journal of solid state chemistry 118, 180 (1995). http://doi.org/10.1006/jssc.1995.1329
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.133
Times cited: 8
DOI: 10.1006/jssc.1995.1329
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“In situ study of the phase transition in Bi2Ti4O11”. Nistor L, Van Tendeloo G, Amelinckx S, Kahlenberg V, Böhm H, Journal of solid state chemistry 119, 281 (1995). http://doi.org/10.1016/0022-4596(95)80042-N
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.133
Times cited: 10
DOI: 10.1016/0022-4596(95)80042-N
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“A synchrotron radiation, HRTEM, X-ray powder diffraction, and Raman spectroscopic study of malayaite, CaSnSiO5”. Groat LA, Kek S, Bismayer U, Schmidt C, Krane HG, Meyer H, Nistor L, Van Tendeloo G, The American mineralogist 81, 595 (1996)
Abstract: Synchrotron radiation, high-resolution transmission electron microscopy (HRTEM), X-ray powder diffraction, and Raman spectroscopy were used to study the structure and thermal behavior of malayaite, CaSnSiO5. No indications of deviation from A2/a symmetry and no structural transitions were observed between 100 and 870 K. HRTEM revealed that the material is free of domains and antiphase boundaries. However, the lattice constants, cell volume, and Raman-active phonons show a thermal discontinuity near 500 K, which is possibly related to variation of the coordination sphere around the highly anisotropic Ca position.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.964
Times cited: 19
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“The paraelectric-ferroelectric phase transition of Bi4Ti3O12 studied by electron microscopy”. Nistor L, Van Tendeloo G, Amelinckx S, Phase transitions 59, 135 (1996)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.954
Times cited: 6
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“Structural studies of nanocrystalline diamond thin films”. Nistor LC, van Landuyt J, Ralchenko VG, Obratzova ED, Korothushenko KG, Smolin AA, Materials science forum 239-241, 115 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“High resolution TEM observation of in situ colloid formation in CaF2 crystals”. Teodorescu VS, Nistor LC, van Landuyt J, Materials science forum 239-241, 671 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 3
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“Nanocrystalline diamond films: transmission electron microscopy and Raman spectroscopy characterization”. Nistor LC, van Landuyt J, Ralchenko VG, Obratzova ED, Smolin AA, Diamond and related materials 6, 159 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.561
Times cited: 116
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“Modulated structures in KAISi3O8: a study by high resolution electron microscopy and 29Si MAS-NMR spectroscopy”. Sanchez-Munoz L, Nistor L, Van Tendeloo G, Sanz J, Journal of electron microscopy 47, 17 (1998). http://doi.org/10.1093/oxfordjournals.jmicro.a023555
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.9
Times cited: 10
DOI: 10.1093/oxfordjournals.jmicro.a023555
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“Natural titanite and malayite: structural investigations and the 500K anomaly”. Meyer HW, Bismayer U, Adiwidjaja G, Zhang M, Nistor L, Van Tendeloo G, Phase transitions 67, 27 (1998). http://doi.org/10.1080/01411599808219187
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.06
Times cited: 9
DOI: 10.1080/01411599808219187
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“High resolution electron microscopy and electron spin resonance studies on cubic boron nitride crystals made by high-pressure/high-temperature synthesis”. Nistor L, Nistor SV, Dincã, G, van Landuyt J, Schoemaker D, Copaciu V, Georgeoni P, Arnici N, Diamonds an related materials 8, 738 (1999). http://doi.org/10.1016/S0925-9635(98)00282-9
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.561
Times cited: 7
DOI: 10.1016/S0925-9635(98)00282-9
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“Structural studies of diamond thin films grown from the arc plasma”. Nistor LC, van Landuyt J, Journal of materials research 12, 2533 (1998)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.673
Times cited: 13
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“HREM of defects in cubic boron nitride single crystals”. Nistor LC, van Landuyt J, Dincã, G, , 695 (1998)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Structural aspects of CVD idamond wafers grown at different hydrogen flow rates”. Nistor L, van Landuyt J, Ralchenko V, Physica status solidi: A: applied research 171, 5 (1999). http://doi.org/10.1002/(SICI)1521-396X(199907)174:1<5::AID-PSSA5>3.3.CO;2-3
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 15
DOI: 10.1002/(SICI)1521-396X(199907)174:1<5::AID-PSSA5>3.3.CO;2-3
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“The ferroelectric phase transition in tridymite type BaAl2O4 studied by electron microscopy”. Abakumov AM, Lebedev OI, Nistor L, Van Tendeloo G, Amelinckx S, Phase transitions 71, 143 (2000). http://doi.org/10.1080/01411590008224545
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.06
Times cited: 21
DOI: 10.1080/01411590008224545
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“Crystallographic aspects related to the high pressure-high temperature phase transformation of boron nitride”. Nistor LC, Van Tendeloo G, Dincã, G, Philosophical magazine 85, 1145 (2005). http://doi.org/10.1080/14786430412331325058
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.505
Times cited: 13
DOI: 10.1080/14786430412331325058
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