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Growth mode and electronic-structure of the epitaxial C60(111)/GeS(001) interface”. Gensterblum G, Hevesi K, Han BY, Yu LM, Pireaux JJ, Thiry PA, Caudano R, Lucas AA, Bernaerts D, Amelinckx S, Van Tendeloo G, Bendele G, Buslaps T, Johnson RL, Foss M, Feidenhans’l R, Le Lay G;, Physical review : B : condensed matter and materials physics 50, 11981 (1994). http://doi.org/10.1103/PhysRevB.50.11981
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Interplay between lattice dynamics and superconductivity in Nb3Sn thin films”. Couet S, Peelaers H, Trekels M, Houben K, Petermann C, Hu MY, Zhao JY, Bi W, Alp EE, Menéndez E, Partoens B, Peeters FM, Van Bael MJ, Vantomme A, Temst K;, Physical review : B : condensed matter and materials physics 88, 045437 (2013). http://doi.org/10.1103/PhysRevB.88.045437
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Positron surface state as a spectroscopic probe for characterizing surfaces of topological insulator materials”. Callewaert V, Shastry K, Saniz R, Makkonen I, Barbiellini B, Assaf BA, Heiman D, Moodera JS, Partoens B, Bansil A, Weiss AH;, Physical review B 94, 115411 (2016). http://doi.org/10.1103/PHYSREVB.94.115411
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Evidence of oxygen-dependent modulation in LuFe2O4”. Bourgeois J, Hervieu M, Poienar M, Abakumov AM, Elkaïm E, Sougrati MT, Porcher F, Damay F, Rouquette J, Van Tendeloo G, Maignan A, Haines J, Martin C;, Physical review : B : condensed matter and materials physics 85, 064102 (2012). http://doi.org/10.1103/PhysRevB.85.064102
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Classical hall effect in scanning gate experiments”. Baumgartner A, Ihn T, Ensslin K, Papp G, Peeters F, Maranowski K, Gossard AC;, Physical review : B : condensed matter and materials physics 74, 7 (2006). http://doi.org/10.1103/PhysRevB.74.165426
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