“Effect of strain on the magnetoexciton ground state in InP/GaxIn1-xP quantum disks”. Janssens KL, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 67, 235325 (2003). http://doi.org/10.1103/PhysRevB.67.235325
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 23
DOI: 10.1103/PhysRevB.67.235325
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“Magneto-excitons in planar type II quantum dots”. Janssens KL, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 64 (2001). http://doi.org/10.1103/PhysRevB.64.155324
Abstract: We study an exciton in a type-II quantum dot, where the electron is confined in the dot, but the hole is located in the barrier material. The exciton properties are studied as a function of a perpendicular magnetic field using a Hartree-Fock mesh calculation. Our model system consists of a planar quantum disk. Angular momentum (l) transitions are predicted with increasing magnetic field. We, also study the transition from a type-I to a type-H quantum dot which is induced by changing the confinement potential of the hole. For sufficiently large magnetic fields a reentrant behavior is found from l(h) = 0 to l(h) not equal 0 and back to l(h) = 0, which results in a transition from type II to type I.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 56
DOI: 10.1103/PhysRevB.64.155324
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“Magnetoexciton in vertically coupled InP/GaInP quantum disks: effect of strain on the exciton ground state”. Janssens KL, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 69, 235320 (2004). http://doi.org/10.1103/PhysRevB.69.235320
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 9
DOI: 10.1103/PhysRevB.69.235320
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“Single and vertically coupled type-II quantum dots in a perpendicular magnetic field: exciton ground-state properties”. Janssens KL, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 66, 075314 (2002). http://doi.org/10.1103/PhysRevB.66.075314
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 38
DOI: 10.1103/PhysRevB.66.075314
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“Stark shift in single and vertically coupled type-I and type-II quantum dots”. Janssens KL, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 65, 233301 (2002). http://doi.org/10.1103/PhysRevB.65.233301
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 43
DOI: 10.1103/PhysRevB.65.233301
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“Observation of cyclotron resonance in an InAs/GaAs wetting layer with shallowly formed quantum dots”. Janssen G, Goovaerts E, Bouwen A, Partoens B, van Daele B, Zurauskiene N, Koenraad PM, Wolter JH, Physical review : B : condensed matter and materials physics 68, 045329 (2003). http://doi.org/10.1103/PhysRevB.68.045329
Keywords: A1 Journal article; Nanostructured and organic optical and electronic materials (NANOrOPT); Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 10
DOI: 10.1103/PhysRevB.68.045329
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“Depth strain profile with sub-nm resolution in a thin silicon film using medium energy ion scattering”. Jalabert D, Pelloux-Gervais D, Béché, A, Hartmann JM, Gergaud P, Rouvière JL, Canut B, Physica Status Solidi A-Applications And Materials Science 209, 265 (2012). http://doi.org/10.1002/PSSA.201127502
Abstract: The depth strain profile in silicon from the Si (001) substrate to the surface of a 2 nm thick Si/12 nm thick SiGe/bulk Si heterostructure has been determined by medium energy ion scattering (MEIS). It shows with sub-nanometer resolution and high strain sensitivity that the thin Si cap presents residual compressive strain caused by Ge diffusion coming from the fully strained SiGe layer underneath. The strain state of the SiGe buffer have been checked by X-ray diffraction (XRD) and nano-beam electron diffraction (NBED) measurements.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
Times cited: 3
DOI: 10.1002/PSSA.201127502
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“On amorphization as a deformation mechanism under high stresses”. Idrissi H, Carrez P, Cordier P, Current opinion in solid state and materials science 26, 100976 (2022). http://doi.org/10.1016/J.COSSMS.2021.100976
Abstract: In this paper we review the work related to amorphization under mechanical stress. Beyond pressure, we highlight the role of deviatoric or shear stresses. We show that the most recent works make amorphization appear as a deformation mechanism in its own right, in particular under extreme conditions (shocks, deformations under high stresses, high strain-rates).
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 11
DOI: 10.1016/J.COSSMS.2021.100976
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“Classical transport of electrons through magnetic barriers”. Ibrahim IS, Schweigert VA, Peeters FM, Physical review : B : condensed matter and materials physics 56, 7508 (1997)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 55
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“Diffusive transport in a Hall junction with a micro-inhomogeneous magnetic field”. Ibrahim IS, Schweigert VA, Peeters FM, Physical review : B : condensed matter and materials physics 57, 15416 (1998). http://doi.org/10.1103/PhysRevB.57.15416
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 41
DOI: 10.1103/PhysRevB.57.15416
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“Two-dimensional electrons in lateral magnetic superlattices”. Ibrahim IS, Peeters FM, Physical review : B : condensed matter and materials physics 52, 17321 (1995). http://doi.org/10.1103/PhysRevB.52.17321
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 169
DOI: 10.1103/PhysRevB.52.17321
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“Phonon softening and direct to indirect band gap crossover in strained single-layer MoSe2”. Horzum S, Sahin H, Cahangirov S, Cudazzo P, Rubio A, Serin T, Peeters FM, Physical review : B : condensed matter and materials physics 87, 125415 (2013). http://doi.org/10.1103/PhysRevB.87.125415
Abstract: Motivated by recent experimental observations of Tongay et al. [Nano Lett. 12, 5576 (2012)] we show how the electronic properties and Raman characteristics of single layer MoSe2 are affected by elastic biaxial strain. We found that with increasing strain: (1) the E' and E '' Raman peaks (E-2g and E-1g in bulk) exhibit significant redshifts (up to similar to 30 cm(-1)), (2) the position of the A'(1) peak remains at similar to 180 cm(-1) (A(1g) in bulk) and does not change considerably with further strain, (3) the dispersion of low energy flexural phonons crosses over from quadratic to linear, and (4) the electronic band structure undergoes a direct to indirect band gap crossover under similar to 3% biaxial tensile strain. Thus the application of strain appears to be a promising approach for a rapid and reversible tuning of the electronic, vibrational, and optical properties of single layer MoSe2 and similar MX2 dichalcogenides. DOI:10.1103/PhysRevB.87.125415
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 171
DOI: 10.1103/PhysRevB.87.125415
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“Formation and stability of point defects in monolayer rhenium disulfide”. Horzum S, Çakir D, Suh J, Tongay S, Huang Y-S, Ho C-H, Wu J, Sahin H, Peeters FM, Physical review : B : condensed matter and materials physics 89, 155433 (2014). http://doi.org/10.1103/PhysRevB.89.155433
Abstract: Recently, rhenium disulfide (ReS2) monolayers were experimentally extracted by conventional mechanical exfoliation technique from as-grown ReS2 crystals. Unlike the well-known members of transition metal dichalcogenides (TMDs), ReS2 crystallizes in a stable distorted-1T structure and lacks an indirect to direct gap crossover. Here we present an experimental and theoretical study of the formation, energetics, and stability of the most prominent lattice defects in monolayer ReS2. Experimentally, irradiation with 3-MeV He+2 ions was used to break the strong covalent bonds in ReS2 flakes. Photoluminescence measurements showed that the luminescence from monolayers is mostly unchanged after highly energetic a particle irradiation. In order to understand the energetics of possible vacancies in ReS2 we performed systematic first-principles calculations. Our calculations revealed that the formation of a single sulfur vacancy has the lowest formation energy in both Re and S rich conditions and a random distribution of such defects are energetically more preferable. Sulfur point defects do not result in any spin polarization whereas the creation of Re-containing point defects induce magnetization with a net magnetic moment of 1-3 mu B. Experimentally observed easy formation of sulfur vacancies is in good agreement with first-principles calculations.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 130
DOI: 10.1103/PhysRevB.89.155433
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“Proximity induced metal-insulator transition in YBa2Cu3O7/La2/3Ca1/3MnO3 superlattices”. Holden T, Habermeier H-U, Cristiani G, Golnik A, Boris A, Pimenov A, Humlicek J, Lebedev OI, Van Tendeloo G, Keimer B, Bernhard C, Physical review : B : condensed matter and materials physics 69, 064505 (2004). http://doi.org/10.1103/PhysRevB.69.064505
Abstract: The far-infrared dielectric response of superlattices (SL) composed of superconducting YBa2Cu3O7 (YBCO) and ferromagnetic La0.67Ca0.33MnO3 (LCMO) has been investigated by ellipsometry. A drastic decrease of the free-carrier response is observed which involves an unusually large length scale of d(crit)approximate to20 nm in YBCO and d(crit)approximate to10 nm in LCMO. A corresponding suppression of metallicity is not observed in SL's where LCMO is replaced by the paramagnetic metal LaNiO3. Our data suggest that either a long-range charge transfer from the YBCO to the LCMO layers or alternatively a strong coupling of the charge carriers to the different and competitive kind of magnetic correlations in the LCMO and YBCO layers is at the heart of the observed metal-insulator transition. The low free-carrier response observed in the far-infrared dielectric response of the magnetic superconductor RuSr2GdCu2O8 is possibly related to this effect.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 101
DOI: 10.1103/PhysRevB.69.064505
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“Microscopic origin of dimerization in the CuO2 chains in Sr14Cu24O41”. Hiroi Z, Amelinckx S, Van Tendeloo G, Kobayashi N, Physical review : B : condensed matter and materials physics 54, 849 (1996). http://doi.org/10.1103/PhysRevB.54.15849
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.736
Times cited: 33
DOI: 10.1103/PhysRevB.54.15849
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“Impurity band and magnetic-field-induced metal-insulator transition in a doped GaAs/AlxGa1-xAs superlattice”. Hilber W, Helm M, Peeters FM, Alavi K, Pathak RN, Physical review : B : condensed matter and materials physics 53, 6919 (1996). http://doi.org/10.1103/PhysRevB.53.6919
Abstract: A combination of infrared spectroscopy and magnetotransport is used to investigate the impurity band and the magnetic-field-induced metal-insulator transition in n-type GaAs/AlxGa1-xAs superlattices. The dropping of the Fermi level from the conduction band into the impurity band upon increasing magnetic field is observed in a sample doped to n=4n(c), where n(c) is the critical density according to the Mott criterion. The metal-insulator transition takes place while the Fermi level is in the impurity band, with no qualitative change from the metallic to the insulating side. Due to the anisotropy of the superlattice band structure, the metal-insulator transition is shifted to higher magnetic field, when the magnetic field is tilted away from the growth axis towards the layer planes.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 14
DOI: 10.1103/PhysRevB.53.6919
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“Monoclinic microdomains and clustering in the colossal magnetoresistance manganites Pr0.7Ca0.25Sr0.05MnO3 and Pr0.75Sr0.25MnO3”. Hervieu M, Van Tendeloo G, Caignaert V, Maignan A, Raveau B, Physical review : B : condensed matter and materials physics 53, 14274 (1996)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.736
Times cited: 75
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“Structural and magnetotransport transitions in the electron-doped Pr1-xSrxMnO3(0.85\leq x\leq1) manganites”. Hervieu M, Martin C, Maignan A, Van Tendeloo G, Jirak Z, Hejtmanek J, Barnabe A, Thopart D, Raveau B, Chemistry and materials 12, 1456 (2000). http://doi.org/10.1021/cm000016o
Abstract: The exploration of the Mn4+-rich side of the Pr1-xSrxMnO3 system has allowed the extension of the domain of the cubic perovskite, by using a two-step process, combining synthesis under Ar flow at high temperature and O-2 pressure annealing at lower temperature. We show that these Pr-doped cubic perovskites exhibit a coupled structural (cubic-tetragonal) and magnetic (para-antiferro) transition connected with a resistivity jump at the same temperature. The strong interplay between lattice, charges, and spins for these oxides results from the appearance at low temperature of the distorted C-type antiferromagnetic structure. The Pr1-xSrxMnO3 magnetic phase diagram shows, for 0.9 less than or equal to x less than or equal to 1 (i.e., on the Mn4+-rich side), the existence at low temperature of C- and G-type antiferromagnetism. The absence of ferromagnetic-antiferromagnetic competition explains that magnetoresistante properties are not observed in this system, in contrast to Mn4+-rich Ln(1-x)Ca(x)MnO(3) systems.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 9.466
Times cited: 24
DOI: 10.1021/cm000016o
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“Electronic and magnetic properties of superlattices of graphene/graphane nanoribbons with different edge hydrogenation”. Hernández-Nieves AD, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 82, 165412 (2010). http://doi.org/10.1103/PhysRevB.82.165412
Abstract: Zigzag graphene nanoribbons patterned on graphane are studied using spin-polarized ab initio calculations. We found that the electronic and magnetic properties of the graphene/graphane superlattice strongly depends on the degree of hydrogenation at the interfaces between the two materials. When both zigzag interfaces are fully hydrogenated, the superlattice behaves like a freestanding zigzag graphene nanoribbon, and the magnetic ground state is antiferromagnetic. When one of the interfaces is half hydrogenated, the magnetic ground state becomes ferromagnetic, and the system is very close to being a half metal with possible spintronics applications whereas the magnetic ground state of the superlattice with both interfaces half hydrogenated is again antiferromagnetic. In this last case, both edges of the graphane nanoribbon also contribute to the total magnetization of the system. All the spin-polarized ground states are semiconducting, independent of the degree of hydrogenation of the interfaces. The ab initio results are supplemented by a simple tight-binding analysis that captures the main qualitative features. Our ab initio results show that patterned hydrogenation of graphene is a promising way to obtain stable graphene nanoribbons with interesting technological applications.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 46
DOI: 10.1103/PhysRevB.82.165412
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“Effects of thermal fluctuations on the magnetic behavior of mesoscopic superconductors”. Hernández AD, Baelus BJ, Domínguez D, Peeters FM, Physical review : B : condensed matter and materials physics 71, 214524 (2005). http://doi.org/10.1103/PhysRevB.71.214524
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 14
DOI: 10.1103/PhysRevB.71.214524
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“Far-infrared spectroscopy of minibands and confined donors in GaAs/AlxGa1-xAs superlattices”. Helm M, Peeters FM, DeRosa F, Colas E, Harbison JP, Florez LT, Physical review : B : condensed matter and materials physics 43, 13983 (1991)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 77
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“Infrared absorption in superlattices: a probe of the miniband dispersion and the structure of the impurity band”. Helm M, Hilber W, Fromherz T, Peeters FM, Alavi K, Pathak R, Physical review : B : condensed matter and materials physics 48, 1601 (1993). http://doi.org/10.1103/PhysRevB.48.1601
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 61
DOI: 10.1103/PhysRevB.48.1601
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“Photoluminescence of negatively charged excitons in high magnetic fields”. Hayne M, Jones CL, Bogaerts R, Riva C, Usher A, Peeters FM, Herlach F, Moshchalkov VV, Henini M, Physical review : B : condensed matter and materials physics 59, 2927 (1999). http://doi.org/10.1103/PhysRevB.59.2927
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 86
DOI: 10.1103/PhysRevB.59.2927
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“Electron-mobility in 2 coupled delta-layers”. Hai, Studart, Peeters FM, Physical review : B : condensed matter and materials physics 52, 11273 (1995). http://doi.org/10.1103/PhysRevB.52.11273
Abstract: The low-temperature transport properties are studied for electrons confined in delta-doped semiconductor structures with two sheets in parallel. The subband quantum mobility and transport mobility are calculated numerically for the Si delta-doped GaAs systems. The effect of coupling of the two delta layers on the electron transport is investigated. Our calculations are in good agreement with experimental results.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 25
DOI: 10.1103/PhysRevB.52.11273
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“Multisubband electron-transport in delta-doped semiconductor systems”. Hai, Studart, Peeters FM, Physical review : B : condensed matter and materials physics 52, 8363 (1995). http://doi.org/10.1103/PhysRevB.52.8363
Abstract: The electron transport properties in delta-doped semiconductor systems-are studied. The subband electronic structure of the delta-doped system is obtained by solving the coupled Schrodinger and Poisson equations. The screening of the quasi-two-dimensional electron gas is taken into account for the ionized impurity scattering through the matrix dielectric function within the random-phase approximation. The quantum and transport mobilities are calculated numerically as a function of the total electron density and the width of the doped layer at zero temperature. The intersubband scattering and the effect of empty subbands above the Fermi level on the electron mobilities are investigated. The calculated mobilities are in reasonable agreement with the available experimental results.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 67
DOI: 10.1103/PhysRevB.52.8363
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“Electron mobility in two coupled &delta, layers”. Hai GQ, Studart N, Peeters FM, Physical review : B : condensed matter and materials physics 52, 11273 (1995)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 24
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“Multisubband electron transport in δ-doped semiconductor systems”. Hai GQ, Studart N, Peeters FM, Physical review : B : condensed matter and materials physics 52, 8363 (1995)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 65
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“Interface effects on magnetopolarons in GaAs/AlxGa1-xAs quantum wells at high magnetic fields”. Hai GQ, Peeters FM, Studart N, Wang YJ, McCombe BD, Physical review : B : condensed matter and materials physics 58, 7822 (1998). http://doi.org/10.1103/PhysRevB.58.7822
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 8
DOI: 10.1103/PhysRevB.58.7822
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“Screening of the electron-phonon interaction in quasi-one-dimensional semiconductor structures”. Hai GQ, Peeters FM, Devreese JT, Wendler L, Physical review : B : condensed matter and materials physics 48, 12016 (1993). http://doi.org/10.1103/PhysRevB.48.12016
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 41
DOI: 10.1103/PhysRevB.48.12016
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“Electron optical-phonon coupling in GaAs/AlxGa1-xAs quantum wells due to interface, slab and half-space modes”. Hai GQ, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 48, 4666 (1993). http://doi.org/10.1103/PhysRevB.48.4666
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 102
DOI: 10.1103/PhysRevB.48.4666
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