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“A Universal Deposition Protocol for Planar Heterojunction Solar Cells with High Efficiency Based on Hybrid Lead Halide Perovskite Families”. Conings B, Babayigit A, Klug M T, Bai S, Gauquelin N, Sakai N, Wang J T-W, Verbeeck J, Boyen H-G, Advanced materials 28, 10701 (2016). http://doi.org/10.1002/adma.201603747
Abstract: A robust and expedient gas quenching method is developed for the solution deposition of hybrid perovskite thin films. The method offers a reliable standard practice for the fabrication of a non-exhaustive variety of perovskites exhibiting excellent film morphology and commensurate high performance in both regular and inverted structured solar cell architectures.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 95
DOI: 10.1002/adma.201603747
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“Getting rid of anti-solvents: gas quenching for high performance perovskite solar cells”. Conings B, Babayigit A, Klug M, Bai S, Gauquelin N, Sakai N, Wang JT-W, Verbeeck J, Boyen H-G, Snaith H, 2018 Ieee 7th World Conference On Photovoltaic Energy Conversion (wcpec)(a Joint Conference Of 45th Ieee Pvsc, 28th Pvsec &, 34th Eu Pvsec) (2018). http://doi.org/10.1109/PVSC.2018.8547987
Abstract: As the field of perovskite optoelectronics developed, a plethora of strategies has arisen to control their electronic and morphological characteristics for the purpose of producing high efficiency devices. Unfortunately, despite this wealth of deposition approaches, the community experiences a great deal of irreproducibility between different laboratories, batches and preparation methods. Aiming to address this issue, we developed a simple deposition method based on gas quenching that yields smooth films for a wide range of perovskite compositions, in single, double, triple and quadruple cation varieties, and produces planar heterojunction devices with competitive efficiencies, so far up to 20%.
Keywords: P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
DOI: 10.1109/PVSC.2018.8547987
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“Structure-property relations of methylamine vapor treated hybrid perovskite CH3NH3PbI3 films and solar cells”. Conings B, Bretschneider SA, Babayigit A, Gauquelin N, Cardinaletti I, Manca JV, Verbeeck J, Snaith HJ, Boyen H-G, ACS applied materials and interfaces 9, 8092 (2017). http://doi.org/10.1021/acsami.6b15175
Abstract: The power conversion efficiency of halide perovskite solar cells is heavily dependent on the perovskite layer being sufficiently smooth and pinhole-free. It has been shown that these features can be obtained even when starting out from rough and discontinuous perovskite film, by briefly exposing it to methylamine (MA) vapor. The exact underlying physical mechanisms of this phenomenon are, however, still unclear. By investigating smooth, MA treated films, based on very rough and discontinuous reference films of methylammonium triiode (MAPbI3), considering their morphology, crystalline features, local conductive properties, and charge carrier lifetime, we unravel the relation between their characteristic physical qualities and their performance in corresponding solar cells. We discover that the extensive improvement in photovoltaic performance upon MA treatment is a consequence of the induced morphological enhancement of the perovskite layer, together with improved electron injection into TiO2, which in fact compensates for an otherwise compromised bulk electronic quality, simultaneously caused by the MA treatment.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 7.504
Times cited: 43
DOI: 10.1021/acsami.6b15175
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“Flattening conduction and valence bands for interlayer excitons in a moire MoS₂/WSe₂, heterobilayer”. Conti S, Chaves A, Pandey T, Covaci L, Peeters FM, Neilson D, Milošević, MV, Nanoscale , 1 (2023). http://doi.org/10.1039/D3NR01183F
Abstract: We explore the flatness of conduction and valence bands of interlayer excitons in MoS2/WSe2 van der Waals heterobilayers, tuned by interlayer twist angle, pressure, and external electric field. We employ an efficient continuum model where the moire pattern from lattice mismatch and/or twisting is represented by an equivalent mesoscopic periodic potential. We demonstrate that the mismatch moire potential is too weak to produce significant flattening. Moreover, we draw attention to the fact that the quasi-particle effective masses around the Gamma-point and the band flattening are reduced with twisting. As an alternative approach, we show (i) that reducing the interlayer distance by uniform vertical pressure can significantly increase the effective mass of the moire hole, and (ii) that the moire depth and its band flattening effects are strongly enhanced by accessible electric gating fields perpendicular to the heterobilayer, with resulting electron and hole effective masses increased by more than an order of magnitude – leading to record-flat bands. These findings impose boundaries on the commonly generalized benefits of moire twistronics, while also revealing alternative feasible routes to achieve truly flat electron and hole bands to carry us to strongly correlated excitonic phenomena on demand.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 6.7
Times cited: 1
DOI: 10.1039/D3NR01183F
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“Field mapping with nanometer-scale resolution for the next generation of electronic devices”. Cooper D, de la Peña F, Béché, A, Rouvière J-L, Servanton G, Pantel R, Morin P, Nano letters 11, 4585 (2011). http://doi.org/10.1021/NL201813W
Abstract: In order to improve the performance of todays nanoscaled semiconductor devices, characterization techniques that can provide information about the position and activity of dopant atoms and the strain fields are essential. Here we demonstrate that by using a modern transmission electron microscope it is possible to apply multiple techniques to advanced materials systems in order to provide information about the structure, fields, and composition with nanometer-scale resolution. Off-axis electron holography has been used to map the active dopant potentials in state-of-the-art semiconductor devices with 1 nm resolution. These dopant maps have been compared to electron energy loss spectroscopy maps that show the positions of the dopant atoms. The strain fields in the devices have been measured by both dark field electron holography and nanobeam electron diffraction.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 12.712
Times cited: 12
DOI: 10.1021/NL201813W
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“Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy”. Cooper D, Denneulin T, Barnes J-P, Hartmann J-M, Hutin L, Le Royer C, Béché, A, Rouvière J-L, Applied Physics Letters 112, 124505 (2012). http://doi.org/10.1063/1.4767925
Abstract: Strain engineering in the conduction channel is a cost effective method of boosting the performance in state-of-the-art semiconductor devices. However, given the small dimensions of these devices, it is difficult to quantitatively measure the strain with the required spatial resolution. Three different transmission electron microscopy techniques, high-angle annular dark field scanning transmission electron microscopy, dark field electron holography, and nanobeam electron diffraction have been applied to measure the strain in simple bulk and SOI calibration specimens. These techniques are then applied to different gate length SiGe SOI pFET devices in order to measure the strain in the conduction channel. For these devices, improved spatial resolution is required, and strain maps with spatial resolutions as good as 1 nm have been achieved. Finally, we discuss the relative advantages and disadvantages of using these three different techniques when used for strain measurement.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 14
DOI: 10.1063/1.4767925
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“Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope”. Cooper D, Denneulin T, Bernier N, Béché, A, Rouvière J-L, Micron 80, 145 (2016). http://doi.org/10.1016/J.MICRON.2015.09.001
Abstract: The last few years have seen a great deal of progress in the development of transmission electron microscopy based techniques for strain mapping. New techniques have appeared such as dark field electron holography and nanobeam diffraction and better known ones such as geometrical phase analysis have been improved by using aberration corrected ultra-stable modern electron microscopes. In this paper we apply dark field electron holography, the geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images, nanobeam diffraction and precession diffraction, all performed at the state-of-the-art to five different types of semiconductor samples. These include a simple calibration structure comprising 10-nm-thick SiGe layers to benchmark the techniques. A SiGe recessed source and drain device has been examined in order to test their capabilities on 2D structures. Devices that have been strained using a nitride stressor have been examined to test the sensitivity of the different techniques when applied to systems containing low values of deformation. To test the techniques on modern semiconductors, an electrically tested device grown on a SOI wafer has been examined. Finally a GaN/AlN superlattice was tested in order to assess the different methods of measuring deformation on specimens that do not have a perfect crystalline structure. The different deformation mapping techniques have been compared to one another and the strengths and weaknesses of each are discussed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.98
Times cited: 50
DOI: 10.1016/J.MICRON.2015.09.001
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“Strain mapping for the silicon-on-insulator generation of semiconductor devices by high-angle annular dark field scanning electron transmission microscopy”. Cooper D, Le Royer C, Béché, A, Rouvière J-L, Applied Physics Letters 100, 233121 (2012). http://doi.org/10.1063/1.4723572
Abstract: The strain in pMOS p-type metal-oxide-semiconductor devicesgrown on silicon-on-insulator substrates has been measured by using the geometrical phase analysis of high angle annular dark field scanning electron microscopy. We show that by using the latest generations of electron microscopes, the strain can now be quantitatively measured with a large field of view, a spatial resolution as low as 1 nm with a sensitivity as good as 0.15%. This technique is extremely flexible, provides both structural and strain information, and can be applied to all types of nanoscale materials both quickly and easily.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
DOI: 10.1063/1.4723572
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“Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography”. Cooper D, Rouvière J-L, Béché, A, Kadkhodazadeh S, Semenova ES, Dunin-Borkowsk R, Applied physics letters 99, 261911 (2011). http://doi.org/10.1063/1.3672194
Abstract: The optical properties of semiconductor quantum dots are greatly influenced by their strain state. Dark field electron holography has been used to measure the strain in InAsquantum dotsgrown in InP with a spatial resolution of 1 nm. A strain value of 5.4% ± 0.1% has been determined which is consistent with both measurements made by geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images and with simulations.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 26
DOI: 10.1063/1.3672194
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“Neutron and X-ray scattering cross sections of orientationally disordered solid C60”. Copley JRD, Michel KH, Journal Of Physics-Condensed Matter 5, 4353 (1993)
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 2.346
Times cited: 34
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“Anion rearrangements in fluorinated Nd2CuO3.5”. Corbel G, Attfield JP, Hadermann J, Abakumov AM, Alekseeva AM, Rozova MG, Antipov EV, Chemistry of materials 15, 189 (2003). http://doi.org/10.1021/cm021102m
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 9.466
Times cited: 9
DOI: 10.1021/cm021102m
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“Indifference of superconductivity and magnetism to size-mismatched cations in the layered iron arsenides Ba1-xNaxFe2As2”. Cortes-Gil R, Parker DR, Pitcher MJ, Hadermann J, Clarke SJ, Chemistry of materials 22, 4304 (2010). http://doi.org/10.1021/cm100956k
Abstract: The evolution of the structure, magnetic ordering, and superconductivity in the series Ba(1-x)Na(x)Fe(2)As(2) is reported up to the limiting Na-rich composition with x = 0.6; the more Na-rich compositions are unstable at high temperatures with respect to competing phases. The magnetic and superconducting behaviors of the Bai,Na,Fe,As, members are similar to those of the betterinvestigated Ba(1-x)Na(x)Fe(2)As(2) analogues. This is evidently a consequence of the quantitatively similar evolution of the structure of the FeAs layers in the two series. In Ba(1-x)Na(x)Fe(2)As(2) antiferromagnetic order and an associated structural distortion are evident for x <= 0.35 and superconductivity is evident when x exceeds 0.2. For 0.4 <= x <= 0.6 bulk superconductivity is evident, and the long-range antiferromagnetically ordered state is completely suppressed. The maximum T(c) in the Ba(1-x)Na(x)Fe(2)As(2) series, as judged by the onset of diamagnetism, is 34K in Ba(0.6)Na(0.4)Fe(2)As(2). Despite the large mis-match in sizes between the two electropositive cations which separate the FeAs layers, there is no evidence for ordering of these cations on the length scale probed by electron diffraction.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 9.466
Times cited: 31
DOI: 10.1021/cm100956k
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“The beneficial effect of CO2 in the low temperature synthesis of high quality carbon nanofibers and thin multiwalled carbon nanotubes from CH_{4} over Ni catalysts”. Corthals S, van Noyen J, Geboers J, Vosch T, Liang D, Ke X, Hofkens J, Van Tendeloo G, Jacobs P, Sels B, Carbon 50, 372 (2012). http://doi.org/10.1016/j.carbon.2011.08.047
Abstract: A low temperature chemical vapor deposition method is described for converting CH4 into high-quality carbon nanofibers (CNFs) using a Ni catalyst supported on either spinel or perovskite oxides in the presence of CO2. The addition of CO2 has a significant influence on CNF purity and stability, while the CNF diameter distribution is significantly narrowed. Ultimately, the addition of CO2 changes the CNF structure from fishbone fibers to thin multiwalled carbon nanotubes. A new in situ cooling principle taking into account dry reforming chemistry and thermodynamics is introduced to account for the structural effects of CO2.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 6.337
Times cited: 26
DOI: 10.1016/j.carbon.2011.08.047
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“A cyclic catalyst pretreatment in CO2 for high yield production of Carbon nanofibers with narrow diameter distribution”. Corthals S, van Noyen J, Liang D, Ke X, Van Tendeloo G, Jacobs P, Sels B, Catalysis letters 141, 1621 (2011). http://doi.org/10.1007/s10562-011-0690-3
Abstract: This paper presents a cyclic catalyst pretreatment process to improve the CNF yield with narrow size distribution by sequentially feeding the CVD reactor with CH4/CO2 mixtures (carbon deposition) and CO2 (carbon removal) prior to the actual growth process. A mechanism based on a break-up of large Ni particles tentatively explains the beneficial effect of the cyclic carbon deposition/removal CVD procedure.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.799
Times cited: 1
DOI: 10.1007/s10562-011-0690-3
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“On-chip very low strain rate rheology of amorphous olivine films”. Coulombier M, Baral P, Orekhov A, Dohmen R, Raskin JP, Pardoen T, Cordier P, Idrissi H, Acta materialia 266, 119693 (2024). http://doi.org/10.1016/J.ACTAMAT.2024.119693
Abstract: Recent observations made by the authors revealed the activation of stress induced amorphization and sliding at grain boundary in olivine [1], a mechanism which is expected to play a pivotal role in the viscosity drop at the lithosphere-asthenosphere boundary and the brittle -ductile transition in the lithospheric mantle. However, there is a lack of information in the literature regarding the intrinsic mechanical properties and the elementary deformation mechanisms of this material, especially at time scales relevant for geodynamics. In the present work, amorphous olivine films were obtained by pulsed laser deposition (PLD). The mechanical response including the rate dependent behavior are investigated using a tension -on -chip (TOC) method developed at UCLouvain allowing to perform creep/relaxation tests on thin films at extremely low strain rates. In the present work, strain rate down to 10-12 s- 1 was reached which is unique. High strain rate sensitivity of 0.054 is observed together with the activation of relaxation at the very early stage of deformation. Furthermore, digital image correlation (DIC), used for the first time on films deformed by TOC, reveals local strain heterogeneities. The relationship between such heterogeneities, the high strain rate sensitivity and the effect of the electron beam in the scanning electron microscope is discussed and compared to the literature.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 9.4
DOI: 10.1016/J.ACTAMAT.2024.119693
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“Survival of the Dirac points in rippled graphene”. Covaci L, Berciu M, Physical Review Letters 100, 256405 (2008). http://doi.org/10.1103/PhysRevLett.100.256405
Abstract: We study the effects of the rippling of a graphene sheet on quasiparticle dispersion. This is achieved using a generalization to the honeycomb lattice of the momentum average approximation, which is accurate for all coupling strengths and at all energies. We show that even though the position of the Dirac points may move and the Fermi speed can be renormalized significantly, quasiparticles with very long lifetimes survive near the Dirac points even for very strong couplings.
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 8.462
Times cited: 15
DOI: 10.1103/PhysRevLett.100.256405
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“Real-time tilt undersampling optimization during electron tomography of beam sensitive samples using golden ratio scanning and RECAST3D”. Craig TM, Kadu AA, Batenburg KJ, Bals S, Nanoscale 15, 5391 (2023). http://doi.org/10.1039/D2NR07198C
Abstract: Electron tomography is a widely used technique for 3D structural analysis of nanomaterials, but it can cause damage to samples due to high electron doses and long exposure times. To minimize such damage, researchers often reduce beam exposure by acquiring fewer projections through tilt undersampling. However, this approach can also introduce reconstruction artifacts due to insufficient sampling. Therefore, it is important to determine the optimal number of projections that minimizes both beam exposure and undersampling artifacts for accurate reconstructions of beam-sensitive samples. Current methods for determining this optimal number of projections involve acquiring and post-processing multiple reconstructions with different numbers of projections, which can be time-consuming and requires multiple samples due to sample damage. To improve this process, we propose a protocol that combines golden ratio scanning and quasi-3D reconstruction to estimate the optimal number of projections in real-time during a single acquisition. This protocol was validated using simulated and realistic nanoparticles, and was successfully applied to reconstruct two beam-sensitive metal–organic framework complexes.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 6.7
Times cited: 1
DOI: 10.1039/D2NR07198C
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“Corrosion protection of Cu by atomic layer deposition”. Cremers V, Rampelberg G, Baert K, Abrahami S, Claes N, de Oliveira TM, Terryn H, Bals S, Dendooven J, Detavernier C, Journal of vacuum science and technology: A: vacuum surfaces and films 37, 060902 (2019). http://doi.org/10.1116/1.5116136
Abstract: Atomic layer deposition (ALD) is a vapor phase technique that is able to deposit uniform, conformal thin films with an excellent thickness control at the atomic scale. 18 nm thick Al2O3 and TiO2 coatings were deposited conformaly and pinhole-free onto micrometer-sized Cu powder, using trimethylaluminum and tetrakis(dimethylamido)titanium(IV), respectively, as a precursor and de-ionized water as a reactant. The capability of the ALD coating to protect the Cu powder against corrosion was investigated. Therefore, the stability of the coatings was studied in solutions with different pH in the range of 0–14, and in situ raman spectroscopy was used to detect the emergence of corrosion products of Cu as an indication that the protective coating starts to fail. Both ALD coatings provide good protection at standard pH values in the range of 5–7. In general, the TiO2 coating shows a better barrier protection against corrosion than the Al2O3 coating. However, for the most extreme pH conditions, pH 0 and pH 14, the TiO2 coating starts also to degrade.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.374
Times cited: 7
DOI: 10.1116/1.5116136
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“Oxidation barrier of Cu and Fe powder by Atomic Layer Deposition”. Cremers V, Rampelberg G, Barhoum A, Walters P, Claes N, Oliveira TM de, Assche GV, Bals S, Dendooven J, Detavernier C, Surface and coatings technology 349, 1032 (2018). http://doi.org/10.1016/j.surfcoat.2018.06.048
Abstract: Atomic layer deposition (ALD) is a vapor based technique which allows to deposit uniform, conformal films with a thickness control at the atomic scale. In this research, Al 2 O 3 coatings were deposited on micrometer-sized Fe and Cu powder (particles) using the thermal trimethylaluminum (TMA)/ water (H 2 O) process in a rotary pump-type ALD reactor. Rotation of the powder during deposition was required to obtain a pinhole-free ALD coating. The protective nature of the coating was evaluated by quantifying its effectiveness in protecting the metal particles during oxidative annealing treatments. The Al 2 O 3 coated powders were annealed in ambient air while in-situ thermogravimetric analysis (TGA) and in-situ x-ray diffraction (XRD) data were acquired. The thermal stability of a series of Cu and Fe powder with different Al 2 O 3 thicknesses were determined with TGA. In both samples a clear shift in oxidation temperature is visible. For Cu and Fe powder coated with 25 nm Al 2 O 3 , we observed an increase of the oxidation temperature with 300-400°C. For the Cu powder a thin film of only 8 nm is required to obtain an initial increase in oxidation temperature of 200°C. In contrast, for Fe powder a thicker coating of 25 nm is required. In both cases, the oxidation temperature increases with increasing thickness of the Al 2 O 3 coating. These results illustrate that the Al 2 O 3 thin film, deposited by the thermal ALD process (TMA/H 2 O) can be an efficient and pinhole-free barrier layer for micrometer-sized powder particles, provided that the powder is properly agitated during the process to ensure sufficient vapour-solid interaction.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.589
Times cited: 10
DOI: 10.1016/j.surfcoat.2018.06.048
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“Double modulation and microstructure of the thermoelectric misfit compound \left[Ca2-yLnyCu0.7+yCo1.3-yO4\right]\left[CoO2\right]b_{1/b2} (Ln = Pr, Y and 0\leq y\leq1/3)”. Créon N, Pérez O, Hadermann J, Klein Y, Hébert S, Hervieu M, Raveau B, Chemistry of materials 18, 5355 (2006). http://doi.org/10.1021/cm061163a
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 9.466
Times cited: 6
DOI: 10.1021/cm061163a
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“Phase transformation of superparamagnetic iron oxide nanoparticles via thermal annealing : implications for hyperthermia applications”. Crippa F, Rodriguez-Lorenzo L, Hua X, Goris B, Bals S, Garitaonandia JS, Balog S, Burnand D, Hirt AM, Haeni L, Lattuada M, Rothen-Rutishauser B, Petri-Fink A, ACS applied nano materials 2, 4462 (2019). http://doi.org/10.1021/ACSANM.9B00823
Abstract: Magnetic hyperthermia has the potential to play an important role in cancer therapy and its efficacy relies on the nanomaterials selected. Superparamagnetic iron oxide nanoparticles (SPIONs) are excellent candidates due to the ability of producing enough heat to kill tumor cells by thermal ablation. However, their heating properties depend strongly on crystalline structure and size, which may not be controlled and tuned during the synthetic process; therefore, a postprocessing is needed. We show how thermal annealing can be simultaneously coupled with ligand exchange to stabilize the SPIONs in polar solvents and to modify their crystal structure, which improves hyperthermia behavior. Using high-resolution transmission electron microscopy, X-ray diffraction, Mossbauer spectroscopy, vibrating sample magnetometry, and lock-in thermography, we systematically investigate the impact of size and ligand exchange procedure on crystallinity, their magnetism, and heating ability. We describe a valid and simple approach to optimize SPIONs for hyperthermia by carefully controlling the size, colloidal stability, and crystallinity.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Times cited: 18
DOI: 10.1021/ACSANM.9B00823
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“Electroluminescence spectra of an STM-tip-induced quantum dot”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Kemerink M, Koenraad PM, Sauthoff K, Wolter JH, Physica. E: Low-dimensional systems and nanostructures 21, 270 (2004). http://doi.org/10.1016/j.physe.2003.11.028
Keywords: A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 2.221
Times cited: 1
DOI: 10.1016/j.physe.2003.11.028
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“Electroluminescence spectra of an STM-tip-induced quantum dot”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Kemerink M, Koenraad PM, Sauthoff K, Wolter JH, Physical review : B : condensed matter and materials physics 68, 195307 (2003). http://doi.org/10.1103/PhysRevB.68.195307
Keywords: A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 4
DOI: 10.1103/PhysRevB.68.195307
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“Influence of the characteristics of the STM-tip on the electroluminescence spectra”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Kemerink M, Koenraad PM, Sauthoff K, Wolter JH, Physica. E: Low-dimensional systems and nanostructures 27, 13 (2005). http://doi.org/10.1016/j.physe.2004.10.002
Keywords: A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 2.221
DOI: 10.1016/j.physe.2004.10.002
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“Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Magnus W, Schoenmaker W, Sorée B, Journal of applied physics 96, 2305 (2004). http://doi.org/10.1063/1.1767619
Keywords: A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 14
DOI: 10.1063/1.1767619
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“Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field effect transistor”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Magnus W, Schoenmaker W, Sorée B, Journal of applied physics 93, 1230 (2003). http://doi.org/10.1063/1.1533108
Keywords: A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 16
DOI: 10.1063/1.1533108
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“Quantum transport in an ultra-thin SOI MOSFET: influence of the channel thickness on the I-V characteristics”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Magnus W, Schoenmaker W, Sorée B, Solid state communications 147, 31 (2008). http://doi.org/10.1016/j.ssc.2008.04.025
Keywords: A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 1.554
Times cited: 8
DOI: 10.1016/j.ssc.2008.04.025
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“Superconducting nanowires: interplay of discrete transverse modes with supercurrent”. Croitoru MD, Shanenko AA, Kaun CC, Peeters FM, Physical review : B : solid state 80, 024513 (2009). http://doi.org/10.1103/PhysRevB.80.024513
Abstract: From a numerical solution of the Bogoliubov-de Gennes equations, we investigate an interplay of the transverse discrete modes with a longitudinal supercurrent in a metallic cylindrical superconducting nanowire. The superconductor-to-normal transition induced by a longitudinal superflow of electrons is found to occur as a cascade of jumps in the order parameter (supercurrent and superfluid density) as a function of the superfluid velocity for diameters d<1015 nm (for Al parameters) and sufficiently low temperatures T<0.30.4Tc, with Tc the critical temperature. When approaching Tc, the jumps are smoothed into steplike but continuous drops. A similar picture occurs for d>1520 nm. Only when the diameter exceeds 5070 nm the quantum-size cascades are fully washed out, and we arrive at the mesoscopic regime. Below this regime the critical current density jc exhibits the quantum-size oscillations with pronounced resonant enhancements: the smaller the diameter, the more significant is the enhancement. Thickness fluctuations of real samples will smooth out such oscillations into an overall growth of jc with decreasing nanowire diameter.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 21
DOI: 10.1103/PhysRevB.80.024513
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“Dependence of superconducting properties on the size and shape of a nanoscale superconductor: from nanowire to film”. Croitoru MD, Shanenko AA, Peeters FM, Physical review : B : condensed matter and materials physics 76, 024511 (2007). http://doi.org/10.1103/PhysRevB.76.024511
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 54
DOI: 10.1103/PhysRevB.76.024511
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“Superconducting nanowires: quantum-confinement effect on the critical magnetic field and supercurrent”. Croitoru MD, Shanenko AA, Peeters FM, International journal of modern physics: B: condensed matter physics, statistical physics, applied physics
T2 –, 32nd International Workshop on Condensed Matter Theories, Aug 12-19, 2008, Loughborough Univ, Loughborough, England 23, 4257 (2009). http://doi.org/10.1142/S0217979209063419
Abstract: We study the effect of electron confinement on the superconducting-to-normal phase transition driven by a magnetic field and/or on the current-carrying state of the superconducting condensate in nanowires. Our investigation is based on a self-consistent numerical solution of the Bogoliubov-de Gennes equations. We show that in a parallel magnetic field and/or in the presence of supercurrent the transition from superconducting to normal phase occurs as a cascade of discontinuous jumps in the superconducting order parameter for diameters D < 10 divided by 15 nm at T = 0. The critical magnetic field exhibits quantum-size oscillations with pronounced resonant enhancements.
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 0.736
Times cited: 1
DOI: 10.1142/S0217979209063419
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