toggle visibility
Search within Results:
Display Options:

Select All    Deselect All
 |   | 
Details
   print
  Records Links
Author (down) Bending, S.J.; Milošević, M.V.; Moshchalkov, V.V. isbn  openurl
  Title Polarity-dependent vortex pinning and spontaneous vortex-antivortex structures in superconductor/ferromagnet hybrids Type H1 Book chapter
  Year 2010 Publication Abbreviated Journal  
  Volume Issue Pages 299-322  
  Keywords H1 Book chapter; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Springer Place of Publication Berlin Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN 978-3-642-15136-1 Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:106139 Serial 2659  
Permanent link to this record
 

 
Author (down) Lujan, G.S.; Magnus, W.; Soree, B.; Pourghaderi, M.A.; Veloso, A.; van Dal, M.J.H.; Lauwers, A.; Kubicek, S.; De Gendt, S.; Heyns, M.; De Meyer, K.; doi  isbn
openurl 
  Title A new method to calculate leakage current and its applications for sub-45nm MOSFETs Type H1 Book chapter
  Year 2005 Publication Solid-State Device Research (ESSDERC), European Conference T2 – ESSDERC 2005 : proceedings of 35th European Solid-State Device Research Conference, September 12-16, 2005, Grenoble, France Abbreviated Journal  
  Volume Issue Pages 489-492  
  Keywords H1 Book chapter; Condensed Matter Theory (CMT)  
  Abstract This paper proposes a new quantum mechanical model for the calculation of leakage currents. The model incorporates both variational calculus and the transfer matrix method to compute the subband energies and the life times of the inversion layer states. The use of variational calculus simplifies the subband energy calculation due to the analytical firm of the wave functions, which offers an attractive perspective towards the calculation of the electron mobility in the channel. The model can be extended to high-k dielectrics with several layers. Good agreement between experimental data and simulation results is obtained for metal gate capacitors.  
  Address  
  Corporate Author Thesis  
  Publisher Ieee Place of Publication S.l. Editor  
  Language Wos 000236176200114 Publication Date 2005-12-13  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN 0-7803-9203-5 Additional Links UA library record; WoS full record  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:103691 Serial 2323  
Permanent link to this record
Select All    Deselect All
 |   | 
Details
   print

Save Citations:
Export Records: