Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Lujan, G.S.; Magnus, W.; Soree, B.; Pourghaderi, M.A.; Veloso, A.; van Dal, M.J.H.; Lauwers, A.; Kubicek, S.; De Gendt, S.; Heyns, M.; De Meyer, K.; |
A new method to calculate leakage current and its applications for sub-45nm MOSFETs |
2005 |
Solid-State Device Research (ESSDERC), European Conference
T2 – ESSDERC 2005 : proceedings of 35th European Solid-State Device Research Conference, September 12-16, 2005, Grenoble, France |
|
|
UA library record; WoS full record |
Lueangchaichaweng, W.; Brooks, N.R.; Fiorilli, S.; Gobechiya, E.; Lin, K.; Li, L.; Parres-Esclapez, S.; Javon, E.; Bals, S.; Van Tendeloo, G.; Martens, J.A.; Kirschhock, C.E.A.; Jacobs, P.A.; Pescarmona, P.P.; |
Gallium oxide nanorods : novel, template-free synthesis and high catalytic activity in epoxidation reactions |
2014 |
Angewandte Chemie: international edition in English |
53 |
61 |
UA library record; WoS full record; WoS citing articles |
Gensterblum, G.; Hevesi, K.; Han, B.Y.; Yu, L.M.; Pireaux, J.J.; Thiry, P.A.; Caudano, R.; Lucas, A.A.; Bernaerts, D.; Amelinckx, S.; Van Tendeloo, G.; Bendele, G.; Buslaps, T.; Johnson, R.L.; Foss, M.; Feidenhans’l, R.; Le Lay, G.; |
Growth mode and electronic-structure of the epitaxial C60(111)/GeS(001) interface |
1994 |
Physical review : B : condensed matter and materials physics |
50 |
81 |
UA library record; WoS full record; WoS citing articles |
Balasubramaniam, Y.; Pobedinskas, P.; Janssens, S.D.; Sakr, G.; Jomard, F.; Turner, S.; Lu, Y.G.; Dexters, W.; Soltani, A.; Verbeeck, J.; Barjon, J.; Nesládek, M.; Haenen, K.; |
Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond |
2016 |
Applied physics letters |
109 |
20 |
UA library record; WoS full record; WoS citing articles |