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A multi-objective optimization-extended techno-economic assessment : exploring the optimal microalgal-based value chain”. Thomassen G, Van Dael M, You F, Van Passel S, Green Chemistry 21, 5945 (2019). http://doi.org/10.1039/C9GC03071A
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Interface-induced modulation of charge and polarization in thin film Fe3O4”. Tian H, Verbeeck J, Brück S, Paul M, Kufer D, Sing M, Claessen R, Van Tendeloo G, Advanced materials 26, 461 (2014). http://doi.org/10.1002/adma.201303329
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Luminescence of oxyfluoride glasses co-doped with Ag nanoclusters and Yb3+ ions”. Tikhomirov VK, Vosch T, Fron E, Rodríguez VD, Velázquez JJ, Kirilenko D, Van Tendeloo G, Hofkens J, Van der Auweraer M, Moshchalkov VV, RSC advances 2, 1496 (2012). http://doi.org/10.1039/c1ra01026c
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An N-myristoylated globin with a redox-sensing function that regulates the defecation cycle in Caenorhabditis elegans”. Tilleman L, De Henau S, Pauwels M, Nagy N, Pintelon I, Braeckman BP, De Wael K, Van Doorslaer S, Adriaensen D, Timmermans J-P, Moens L, Dewilde S, PLoS ONE 7, e48768 (2012). http://doi.org/10.1371/JOURNAL.PONE.0048768
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The contribution of microbial biotechnology to sustainable development goals”. Timmis K, de Vos WM, Luis Ramos J, Vlaeminck SE, Prieto A, Danchin A, Verstraete W, de Lorenzo V, Lee SY, Brussow H, Timmis JK, Singh BK, Microbial biotechnology 10, 984 (2017). http://doi.org/10.1111/1751-7915.12818
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Twinning in pure Ti subjected to monotonic simple shear deformation”. Tirry W, Bouvier S, Benmhenni N, Hammami W, Habraken AM, Coghe F, Schryvers D, Rabet L, Materials characterization 72, 24 (2012). http://doi.org/10.1016/j.matchar.2012.07.001
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A multi-scale characterization of deformation twins in Ti6Al4V sheet material deformed by simple shear”. Tirry W, Coghe F, Bouvier S, Gasperini M, Rabet L, Schryvers D, Materials science and engineering: part A: structural materials: properties, microstructure and processing 527, 4136 (2010). http://doi.org/10.1016/j.msea.2010.03.039
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Characterization of NbC and (Nb, Ti)N nanoprecipitates in TRIP assisted multiphase steels”. Tirumalasetty GK, van Huis MA, Fang CM, Xu Q, Tichelaar FD, Hanlon DN, Sietsma J, Zandbergen HW, Acta materialia 59, 7406 (2011). http://doi.org/10.1016/j.actamat.2011.08.012
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Deformation-induced austenite grain rotation and transformation in TRIP-assisted steel”. Tirumalasetty GK, van Huis MA, Kwakernaak C, Sietsma J, Sloof WG, Zandbergen HW, Acta materialia 60, 1311 (2012). http://doi.org/10.1016/j.actamat.2011.11.026
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Detection of CO2 using CNT-based sensors: Role of Fe catalyst on sensitivity and selectivity”. Tit N, Al Ezzi MM, Abdullah HM, Yusupov M, Kouser S, Bahlouli H, Yamani ZH, Materials chemistry and physics 186, 353 (2017). http://doi.org/10.1016/J.MATCHEMPHYS.2016.11.006
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Ab initio based atomic scattering amplitudes and {002} electron structure factors of InxGa1-xAs/GaAs quantum wells”. Titantah JT, Lamoen D, Schowalter M, Rosenauer A, Journal of physics : conference series 209, 012040 (2010). http://doi.org/10.1088/1742-6596/209/1/012040
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Bond length variation in Ga1-xInxAs crystals from the Tersoff potential”. Titantah JT, Lamoen D, Schowalter M, Rosenauer A, Journal of applied physics 101, 123508 (2007). http://doi.org/10.1063/1.2748338
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Density-functional theory calculations of the electron energy-loss near-edge structure of Li-intercalated graphite”. Titantah JT, Lamoen D, Schowalter M, Rosenauer A, Carbon 47, 2501 (2009). http://doi.org/10.1016/j.carbon.2009.05.002
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Effect of temperature on the 002 electron structure factor and its consequence for the quantification of ternary and quaternary III-V crystals”. Titantah JT, Lamoen D, Schowalter M, Rosenauer A, Springer proceedings in physics 120, 189 (2008)
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Modified atomic scattering amplitudes and size effects on the 002 and 220 electron structure factors of multiple Ga1-xInxAs/GaAs quantum wells”. Titantah JT, Lamoen D, Schowalter M, Rosenauer A, Journal of applied physics 105, 084310 (2009). http://doi.org/10.1063/1.3115407
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Size effects and strain state of Ga1-xInxAs/GaAs multiple quantum wells: Monte Carlo study”. Titantah JT, Lamoen D, Schowalter M, Rosenauer A, Physical review : B : condensed matter and materials physics 78, 165326 (2008). http://doi.org/10.1103/PhysRevB.78.165326
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Temperature effect on the 002 structure factor of ternary Ga1-xInxAs crystals”. Titantah JT, Lamoen D, Schowalter M, Rosenauer A, Physical review : B : condensed matter and materials physics 76, 073303 (2007). http://doi.org/10.1103/PhysRevB.76.073303
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Reduction of magnetic interaction due to clustering in doped transition-metal dichalcogenides : a case study of Mn-, V-, and Fe-doped WSe₂”. Tiwari S, Van de Put M, Sorée B, Hinkle C, Vandenberghe WG, ACS applied materials and interfaces 16, 4991 (2024). http://doi.org/10.1021/ACSAMI.3C14114
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Carrier transport in two-dimensional topological insulator nanoribbons in the presence of vacancy defects”. Tiwari S, Van de Put ML, Sorée B, Vandenberghe WG, 2D materials 6, 025011 (2019). http://doi.org/10.1088/2053-1583/AB0058
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Critical behavior of the ferromagnets CrI₃, CrBr₃, and CrGeTe₃, and the antiferromagnet FeCl₂, : a detailed first-principles study”. Tiwari S, Van de Put ML, Sorée B, Vandenberghe WG, Physical Review B 103, 014432 (2021). http://doi.org/10.1103/PHYSREVB.103.014432
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Magnetic order and critical temperature of substitutionally doped transition metal dichalcogenide monolayers”. Tiwari S, Van de Put ML, Sorée B, Vandenberghe WG, npj 2D Materials and Applications 5, 54 (2021). http://doi.org/10.1038/S41699-021-00233-0
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Ab initio modeling of few-layer dilute magnetic semiconductors”. Tiwari S, Van de Put ML, Sorée B, Vandenberghe WG, International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 –, International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 27-29, 2021, Dallas, TX , 141 (2021). http://doi.org/10.1109/SISPAD54002.2021.9592535
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Carrier transport in a two-dimensional topological insulator nanoribbon in the presence of vacancy defects”. Tiwari S, Van de Put ML, Sorée B, Vandenberghe WG, International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 –, International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 24-26, 2018, Austin, TX , 92 (2018). http://doi.org/10.1109/SISPAD.2018.8551720
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Atomistic modeling of spin and electron dynamics in two-dimensional magnets switched by two-dimensional topological insulators”. Tiwari S, Van de Put ML, Temst K, Vandenberghe WG, Sorée B, Physical review applied 19, 014040 (2023). http://doi.org/10.1103/PHYSREVAPPLIED.19.014040
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Computing Curie temperature of two-dimensional ferromagnets in the presence of exchange anisotropy”. Tiwari S, Vanherck J, Van de Put ML, Vandenberghe WG, Sorée B, Physical review research 3, 043024 (2021). http://doi.org/10.1103/PHYSREVRESEARCH.3.043024
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Dynamics of colloids in a narrow channel driven by a nonuniform force”. Tkachenko DV, Misko VR, Peeters FM, Physical review : E : statistical physics, plasmas, fluids, and related interdisciplinary topics 80, 051401 (2009). http://doi.org/10.1103/PhysRevE.80.051401
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Effect of correlated noise on quasi-one-dimensional diffusion”. Tkachenko DV, Misko VR, Peeters FM, Physical review : E : statistical physics, plasmas, fluids, and related interdisciplinary topics 82, 051102 (2010). http://doi.org/10.1103/PhysRevE.82.051102
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From single to multiple Ag-layer modification of Au nanocavity substrates : a tunable probe of the chemical surface-enhanced Raman scattering mechanism”. Tognalii NG, Cortés E, Hernández-Nieves AD, Carro P, Usaj G, Balseiro CA, Vela ME, Salvarezza RC, Fainstein A, ACS nano 5, 5433 (2011). http://doi.org/10.1021/nn200567m
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Reliability of copper dual damascene influenced by pre-clean”. Tokei Z, Lanckmans F, van den Bosch G, Van Hove M, Maex K, Bender H, Hens S, van Landuyt J, Analysis Of Integrated Circuits , 118 (2002). http://doi.org/10.1109/IPFA.2002.1025629
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Superior reliability of junctionless pFinFETs by reduced oxide electric field”. Toledano-Luque M, Matagne P, Sibaja-Hernandez A, Chiarella T, Ragnarsson L-A, Sorée B, Cho M, Mocuta A, Thean A, IEEE electron device letters 35, 1179 (2014). http://doi.org/10.1109/LED.2014.2361769
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