Abstract: The precipitation of a disordered FCC surface structure after low angle Ga+ ion irradiation during focused ion beam thinning of a B2 Cu-Zn-Al alloy with e/a=1.48 is reported. Conventional as well as high-resolution transmission electron microscopy techniques reveal FCC layers on both sides of the thinned sample. The occurrence of this structure is attributed to disordering and dezincification of the alloy resulting from the sputtering process during the irradiation. Changes in crystallographic sample orientation with respect to the incoming ion beam do not have a significant effect on the appearance of the FCC surface structure.

Abstract: The effects of high dose ion irradiation in β CuZnAl were investigated between room temperature and 150 °C. Single crystal samples with surface normal close to [001]β were irradiated with 300 keV Cu+ ions. Microstructural changes were characterized using transmission electron microscopy. Irradiation induced cavities located on the surface exposed to the irradiation were observed. The morphology, size and density distribution of these cavities were analyzed as a function of different irradiation conditions. The shape and location of the cavities with respect to the irradiation surface were not affected by irradiation temperature or irradiation dose. Instead, the cavity size distribution showed a bi-modal shape for a dose of 15 dpa, regardless of irradiation temperature. For a dose of 30 dpa the bi-modal distribution was only observed after room temperature irradiation. The diffusion effects of vacancies produced by irradiation are analyzed in shape memory CuZnAl alloys, which main characteristic is the diffusionless martensitic transformation. Particularly, the cavity size distributions were analyzed in terms of nucleation, growth and coalescence.

Abstract: Highly thermally conductive graphite flakes (Gf)/Si/Al composites have been fabricated using Gf, Si powder and an AlSi7Mg0.3 alloy by an optimized pressure infiltration process for thermal management applications. In the composites, the layers of Gf were spaced apart by Si particles and oriented perpendicular to the pressing direction, which offered the opportunity to tailor the thermal conductivity (TC) and coefficient of thermal expansion (CTE) of the composites. Microstructural characterization revealed that the formation of a clean and tightly-adhered interface at the nanoscale between the side surface of the Gf and Al matrix, devoid of a detrimental Al4C3 phase and a reacted amorphous AlSiOC layer, contributed to excellent thermal performance along the alignment direction. With increasing volume fraction of Gf from 13.7 to 71.1 vol.%, the longitudinal (i.e. parallel to the graphite layers) TC of the composites increased from 179 to 526 W/m K, while the longitudinal CTE decreased from 12.1 to 7.3 ppm/K (matching the values of electronic components). Furthermore, the modified layers-in-parallel model better fitted the longitudinal TC data than the layers-in-parallel model and confirmed that the clean and tightly-adhered interface is favorable for the enhanced longitudinal TC.