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Relaxation phenomena at the metal-to-insulator transition in La0.8Sr0.2MnO3 single crystals”. Dominiczak M, Ruyter A, Limelette P, Monot-Laffez I, Giovannelli F, Rossell MD, Van Tendeloo G, Solid state communications 148, 340 (2008). http://doi.org/10.1016/j.ssc.2008.08.029
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Short-range order in phase segregation systems”. De Meulenaere P, Mommaert C, Van Tendeloo G, Solid state communications 102, 687 (1997). http://doi.org/10.1016/S0038-1098(97)00071-9
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Quantum transport in an ultra-thin SOI MOSFET: influence of the channel thickness on the I-V characteristics”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Magnus W, Schoenmaker W, Sorée B, Solid state communications 147, 31 (2008). http://doi.org/10.1016/j.ssc.2008.04.025
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Tunable effective masses of magneto-excitons in two-dimensional materials”. Chaves A, Peeters FM, Solid State Communications 334, 114371 (2021). http://doi.org/10.1016/J.SSC.2021.114371
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Spin-polarized tunneling through diluted magnetic semiconductor barriers”. Chang K, Peeters FM, Solid state communications 120, 181 (2001). http://doi.org/10.1016/S0038-1098(01)00370-2
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Newtonian trajectories : a powerful tool for solving quantum dynamics”. Brosens F, Magnus W, Solid state communications 150, 2102 (2010). http://doi.org/10.1016/j.ssc.2010.09.019
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Annular dark field imaging in a TEM”. Bals S, Kabius B, Haider M, Radmilovic V, Kisielowski C, Solid state communications 130, 675 (2004). http://doi.org/10.1016/j.ssc.2004.03.035
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