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Author ![sorted by Author field, ascending order (up)](img/sort_asc.gif) |
Vermeulen, B.B.; Raymenants, E.; Pham, V.T.; Pizzini, S.; Sorée, B.; Wostyn, K.; Couet, S.; Nguyen, V.D.; Temst, K. |
![goto web page (via DOI) doi](http://nano.uantwerpen.be/nanorefs/img/doi.gif)
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Title |
Towards fully electrically controlled domain-wall logic |
Type |
A1 Journal article |
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Year |
2024 |
Publication |
AIP advances |
Abbreviated Journal |
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14 |
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2 |
Pages |
025030-25035 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT) |
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Abstract |
Utilizing magnetic tunnel junctions (MTJs) for write/read and fast spin-orbit-torque (SOT)-driven domain-wall (DW) motion for propagation, enables non-volatile logic and majority operations, representing a breakthrough in the implementation of nanoscale DW logic devices. Recently, current-driven DW logic gates have been demonstrated via magnetic imaging, where the Dzyaloshinskii-Moriya interaction (DMI) induces chiral coupling between perpendicular magnetic anisotropy (PMA) regions via an in-plane (IP) oriented region. However, full electrical operation of nanoscale DW logic requires electrical write/read operations and a method to pattern PMA and IP regions compatible with the fabrication of PMA MTJs. Here, we study the use of a Hybrid Free Layer (HFL) concept to combine an MTJ stack with DW motion materials, and He+ ion irradiation to convert the stack from PMA to IP. First, we investigate the free layer thickness dependence of 100-nm diameter HFL-MTJ devices and find an optimal CoFeB thickness, from 7 to 10 angstrom, providing high tunneling magnetoresistance (TMR) readout and efficient spin-transfer torque (STT) writing. We then show that high DMI materials, like Pt/Co, can be integrated into an MTJ stack via interlayer exchange coupling with the CoFeB free layer. In this design, DMI values suitable for SOT-driven DW motion are measured by asymmetric bubble expansion. Finally, we demonstrate that He+ irradiation reliably converts the coupled free layers from PMA to IP. These findings offer a path toward the integration of fully electrically controlled DW logic circuits. |
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001163573400005 |
Publication Date |
2024-02-16 |
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2158-3226 |
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UA library record; WoS full record |
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Most recent IF: NA |
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Call Number |
UA @ admin @ c:irua:203823 |
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9109 |
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Author ![sorted by Author field, ascending order (up)](img/sort_asc.gif) |
Zou, H.; Krekels, T.; Van Tendeloo, G.; Wagener, G.; Buchgeister, M.; Hosseini, S.M.; Kopitzki, K. |
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Title |
Oxygen ordering and critical temperature plateaus in ABa2Cu3O7-d (A=Er, Nd, Sm, Yb), pp |
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P3 Proceeding |
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Year |
1992 |
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Abbreviated Journal |
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278-279 |
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P3 Proceeding; Electron microscopy for materials research (EMAT) |
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Beijing |
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0000-00-00 |
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no |
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Call Number |
UA @ lucian @ c:irua:4443 |
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2547 |
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