“Quantitative three-dimensional analysis of Ni4Ti3 precipitate morphology and distribution in polycrystalline Ni-Ti”. Cao S, Nishida M, Schryvers D, Acta materialia 59, 1780 (2011). http://doi.org/10.1016/j.actamat.2010.11.044
Abstract: The three-dimensional size, morphology and distribution of Ni4Ti3 precipitates in a Ni50.8Ti49.2 polycrystalline shape memory alloy with a heterogeneous microstructure have been investigated using a focused ion beam/scanning electron microscopy slice-and-view procedure. The mean volume, central plane diameter, thickness, aspect ratio and sphericity of the precipitates in the grain interior as well as near to the grain boundary were measured and/or calculated. The morphology of the precipitates was quantified by determining the equivalent ellipsoids with the same moments of inertia and classified according to the Zingg scheme. Also, the pair distribution functions describing the three-dimensional distributions were obtained from the coordinates of the precipitate mass centres. Based on this new data it is suggested that the existence of the heterogeneous microstructure could be due to a very small concentration gradient in the grains of the homogenized material and that the resulting multistage martensitic transformation originates in strain effects related to the size of the precipitates and scale differences of the available B2 matrix in between the precipitates.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 5.301
Times cited: 34
DOI: 10.1016/j.actamat.2010.11.044
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“First-principles analysis of the spectroscopic limited maximum efficiency of photovoltaic absorber layers for CuAu-like chalcogenides and silicon”. Bercx M, Sarmadian N, Saniz R, Partoens B, Lamoen D, Physical chemistry, chemical physics 18, 20542 (2016). http://doi.org/10.1039/c6cp03468c
Abstract: Chalcopyrite semiconductors are of considerable interest for application as absorber layers in thin-film photovoltaic cells. When growing films of these compounds, however, they are often found to contain CuAu-like domains, a metastable phase of chalcopyrite. It has been reported that for CuInS2, the presence of the CuAu-like phase improves the short circuit current of the chalcopyrite-based photovoltaic cell. We investigate the thermodynamic stability of both phases for a selected list of I-III-VI2 materials using a first-principles density functional theory approach. For the CuIn-VI2 compounds, the difference in formation energy between the chalcopyrite and CuAu-like phase is found to be close to 2 meV per atom, indicating a high likelihood of the presence of CuAu-like domains. Next, we calculate the spectroscopic limited maximum efficiency (SLME) of the CuAu-like phase and compare the results with those of the corresponding chalcopyrite phase. We identify several candidates with a high efficiency, such as CuAu-like CuInS2, for which we obtain an SLME of 29% at a thickness of 500 nm. We observe that the SLME can have values above the Shockley-Queisser (SQ) limit, and show that this can occur because the SQ limit assumes the absorptivity to be a step function, thus overestimating the radiative recombination in the detailed balance approach. This means that it is possible to find higher theoretical efficiencies within this framework simply by calculating the J-V characteristic with an absorption spectrum. Finally, we expand our SLME analysis to indirect band gap absorbers by studying silicon, and find that the SLME quickly overestimates the reverse saturation current of indirect band gap materials, drastically lowering their calculated efficiency.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 4.123
Times cited: 34
DOI: 10.1039/c6cp03468c
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“Kronig-Penney model on bilayer graphene : spectrum and transmission periodic in the strength of the barriers”. Barbier M, Vasilopoulos P, Peeters FM, Physical review : B : condensed matter and materials physics 82, 235408 (2010). http://doi.org/10.1103/PhysRevB.82.235408
Abstract: We show that the transmission through single and double δ-function potential barriers of strength P=VWb/ℏvF in bilayer graphene is periodic in P with period π. For a certain range of P values we find states that are bound to the potential barrier and that run along the potential barrier. Similar periodic behavior is found for the conductance. The spectrum of a periodic succession of δ-function barriers (Kronig-Penney model) in bilayer graphene is periodic in P with period 2π. For P smaller than a critical value Pc, the spectrum exhibits two Dirac points while for P larger than Pc an energy gap opens. These results are extended to the case of a superlattice of δ-function barriers with P alternating in sign between successive barriers; the corresponding spectrum is periodic in P with period π.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 34
DOI: 10.1103/PhysRevB.82.235408
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“Highly dispersed mixed zirconia and hafnia nanoparticles in a silica matrix: First example of a ZrO2-HfO2-SiO2 ternary oxide system”. Armelao L, Bertagnolli H, Bleiner D, Groenewolt M, Gross S, Krishnan V, Sada C, Schubert U, Tondello E, Zattin A, Advanced functional materials (2007). http://doi.org/10.1002/ADFM.200600458
Abstract: ZrO2 and HfO2 nanoparticles are homogeneously dispersed in SiO2 matrices (supported film and bulk powders) by copolymerization of two oxozirconium and oxohafnium clusters (M4O(2)(OMc)(12), M= Zr, Hf; OMc = OC(O)-C(CH3)=CH2) with (methacryloxypropyl)trimethoxysilane (MAPTMS, (CH2=C(CH3)C(O)O)-(CH2)(3)Si(OCH3)(3)). After calcination (at a temperature >= 800 degrees C), a silica matrix with homogeneously distributed MO2 nanocrystallites is obtained. This route yields a spatially homogeneous dispersion of the metal precursors inside the silica matrix, which is maintained during calcination. The composition of the films and the powders is studied before and after calcination by using Fourier transform infrared (FTIR) analysis, X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), and laser ablation inductively coupled plasma mass spectrometry (LA-ICPMS). The local environment of the metal atoms in one of the calcined samples is investigated by using X-ray Absorption Fine Structure (XAFS) spectroscopy. Through X-ray diffraction (XRD) the crystallization of Hf and Zr oxides is seen at temperatures higher than those expected for the pure oxides, and transmission electron microscopy (TEM) shows the presence of well-distributed and isolated crystalline oxide nanoparticles (540 nm).
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 12.124
Times cited: 34
DOI: 10.1002/ADFM.200600458
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“Ordering of tetrahedral chains in the Sr2MnGaO5 brownmillerite”. Abakumov AM, Alekseeva AM, Rozova MG, Antipov EV, Lebedev OI, Van Tendeloo G, Journal of solid state chemistry 174, 319 (2003). http://doi.org/10.1016/S0022-4596(03)00226-3
Abstract: Tetrahedral chain ordering in the Sr2MnGaO5 structure is studied using electron diffraction (ED) and high-resolution electron microscopy. The ED patterns show the presence of satellite reflections, which indicate a commensurately modulated structure with a = 5.4056(8) Angstrom b 16.171(3) Angstrom, c = 5.5592(7) Angstrom, q – 1/2c*, superspace group Immma(00gamma,)s00. The Superstructure arises due to ordering of the two types of symmetry related tetrahedral chains (L and R) according to a ... LRLR ... sequence, where L and R chains alternate along the c-axis within the same (GaO) layer. Numerous defects at different structural levels were observed, comprising interleaving L and R chains, violation of the ... LRLR ... chain sequence within one layer, different stacking modes of the ... LRLR ... ordered layers with subsequent alternation of blocks of different width along the h-axis of the brownmillerite subcell and island fragmentation of the modulated superstructure. By in situ heating ED experiments it is found that the long-range ordering of the tetrahedral chains is stable tip to 665degreesC and is completely suppressed at 905degreesC. (C) 2003 Elsevier Inc. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 34
DOI: 10.1016/S0022-4596(03)00226-3
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“Global and local superconductivity in boron-doped granular diamond”. Zhang G, Turner S, Ekimov EA, Vanacken J, Timmermans M, Samuely T, Sidorov VA, Stishov SM, Lu Y, Deloof B, Goderis B, Van Tendeloo G, Van de Vondel J, Moshchalkov VV;, Advanced materials 26, 2034 (2014). http://doi.org/10.1002/adma.201304667
Abstract: Strong granularity-correlated and intragrain modulations of the superconducting order parameter are demonstrated in heavily boron-doped diamond situated not yet in the vicinity of the metal-insulator transition. These modulations at the superconducting state (SC) and at the global normal state (NS) above the resistive superconducting transition, reveal that local Cooper pairing sets in prior to the global phase coherence.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 34
DOI: 10.1002/adma.201304667
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“InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models”. Smets Q, Verreck D, Verhulst AS, Rooyackers R, Merckling C, Van De Put M, Simoen E, Vandervorst W, Collaert N, Thean VY, Sorée B, Groeseneken G, Heyns MM;, Journal of applied physics 115, 184503 (2014). http://doi.org/10.1063/1.4875535
Abstract: Promising predictions are made for III-V tunnel-field-effect transistor (FET), but there is still uncertainty on the parameters used in the band-to-band tunneling models. Therefore, two simulators are calibrated in this paper; the first one uses a semi-classical tunneling model based on Kane's formalism, and the second one is a quantum mechanical simulator implemented with an envelope function formalism. The calibration is done for In0.53Ga0.47As using several p+/intrinsic/n+ diodes with different intrinsic region thicknesses. The dopant profile is determined by SIMS and capacitance-voltage measurements. Error bars are used based on statistical and systematic uncertainties in the measurement techniques. The obtained parameters are in close agreement with theoretically predicted values and validate the semi-classical and quantum mechanical models. Finally, the models are applied to predict the input characteristics of In0.53Ga0.47As n- and p-lineTFET, with the n-lineTFET showing competitive performance compared to MOSFET.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 34
DOI: 10.1063/1.4875535
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“Fluorescent nanodiamonds with bioorthogonally reactive protein-resistant polymeric coatings”. Rehor I, Mackova H, Filippov SK, Kucka J, Proks V, Slegerova J, Turner S, Van Tendeloo G, Ledvina M, Hruby M, Cigler P;, ChemPlusChem 79, 21 (2014). http://doi.org/10.1002/cplu.201300339
Abstract: The novel synthesis of a polymeric interface grown from the surface of bright fluorescent nanodiamonds is reported. The polymer enables bioorthogonal attachment of various molecules by click chemistry; the particles are resistant to nonspecific protein adsorption and show outstanding colloidal stability in buffers and biological media. The coating fully preserves the unique optical properties of the nitrogen-vacancy centers that are crucial for bioimaging and sensoric applications.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.797
Times cited: 34
DOI: 10.1002/cplu.201300339
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“KCN chemical etch for interface engineering in Cu2ZnSnSe4 solar cells”. Buffière M, Brammertz G, Sahayaraj S, Batuk M, Khelifi S, Mangin D, El Mel AA, Arzel L, Hadermann J, Meuris M, Poortmans J;, ACS applied materials and interfaces 7, 14690 (2015). http://doi.org/10.1021/acsami.5b02122
Abstract: The removal of secondary phases from the surface of the kesterite crystals is one of the major challenges to improve the performances of Cu2ZnSn(S,Se)(4) (CZTSSe) thin film solar cells. In this Contribution, the KCN/KOH Chemical etching approach, originally developed for the removal of CuxSe phases in Cu(In,Ga)(S,Se)(2) thin films) is applied to CZTSe absorbers exhibiting various chemical compositions. Two distinct electrical behaviors were observed on CZTSe/CdS solar cells after treatment: (i) the improvement of the fill factor (FF) after 30 s of etching for the CZTSe absorbers showing initially a distortion of the electrical characteristic; (ii) the progressive degradation Of the FF after long treatment time for all Cu-poor CZTSe solar cell samples. The first effect can be attributed to the action of KCN on the absorber, that is found to clean the absorber free surface from most of the secondary phases surrounding the kesterite grains (e.g., Se-0, CuxSe, SnSex, SnO2, Cu2SnSe3 phases, excepting the ZnSe-based phases). The second observation was identified as a consequence of the preferential etching of Se, Sn, and Zn from the CZTSe surface by the KOH solution, combined with the modification of the alkali content of the absorber. The formation of a Cu-rich shell at the absorber/buffer layer interface, leading to the increase of the recombination rate at the interface, and the increase in the doping of the absorber layer after etching are found to be at the origin of the deterioration of the FF of the solar cells.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 7.504
Times cited: 34
DOI: 10.1021/acsami.5b02122
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