“Quantitative atomic resolution mapping using high-angle annular dark field scanning transmission electron microscopy”. Van Aert S, Verbeeck J, Erni R, Bals S, Luysberg M, van Dyck D, Van Tendeloo G, Ultramicroscopy 109, 1236 (2009). http://doi.org/10.1016/j.ultramic.2009.05.010
Abstract: A model-based method is proposed to relatively quantify the chemical composition of atomic columns using high angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) images. The method is based on a quantification of the total intensity of the scattered electrons for the individual atomic columns using statistical parameter estimation theory. In order to apply this theory, a model is required describing the image contrast of the HAADF STEM images. Therefore, a simple, effective incoherent model has been assumed which takes the probe intensity profile into account. The scattered intensities can then be estimated by fitting this model to an experimental HAADF STEM image. These estimates are used as a performance measure to distinguish between different atomic column types and to identify the nature of unknown columns with good accuracy and precision using statistical hypothesis testing. The reliability of the method is supported by means of simulated HAADF STEM images as well as a combination of experimental images and electron energy-loss spectra. It is experimentally shown that statistically meaningful information on the composition of individual columns can be obtained even if the difference in averaged atomic number Z is only 3. Using this method, quantitative mapping at atomic resolution using HAADF STEM images only has become possible without the need of simultaneously recorded electron energy loss spectra.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.843
Times cited: 166
DOI: 10.1016/j.ultramic.2009.05.010
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“Atomic resolution mapping using quantitative high-angle annular dark field scanning transmission electron microscopy”. Van Aert S, Verbeeck J, Bals S, Erni R, van Dyck D, Van Tendeloo G, Microscopy and microanalysis 15, 464 (2009). http://doi.org/10.1017/S1431927609093957
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 1.891
Times cited: 1
DOI: 10.1017/S1431927609093957
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“Resolution of coherent and incoherent imaging systems reconsidered: classical criteria and a statistical alternative”. Van Aert S, van Dyck D, den Dekker AJ, Optics express 14, 3830 (2006). http://doi.org/10.1364/OE.14.003830
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 3.307
Times cited: 45
DOI: 10.1364/OE.14.003830
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“Do smaller probes in a scanning transmission electron microscope result in more precise measurement of the distances between atom columns?”.Van Aert S, van Dyck D, Philosophical magazine: B: physics of condensed matter: electronic, optical and magnetic properties 81, 1833 (2001). http://doi.org/10.1080/13642810108223121
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Times cited: 11
DOI: 10.1080/13642810108223121
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“Model-based electron microscopy : from images toward precise numbers for unknown structure parameters”. Van Aert S, van den Broek W, Goos P, van Dyck D, Micron 43, 509 (2012). http://doi.org/10.1016/j.micron.2011.10.019
Abstract: Statistical parameter estimation theory is proposed as a method to quantify electron microscopy images. It aims at obtaining precise and accurate values for the unknown structure parameters including, for example, atomic column positions and types. In this theory, observations are purely considered as data planes, from which structure parameters have to be determined using a parametric model describing the images. The method enables us to measure positions of atomic columns with a precision of the order of a few picometers even though the resolution of the electron microscope is one or two orders of magnitude larger. Moreover, small differences in averaged atomic number, which cannot be distinguished visually, can be quantified using high-angle annular dark field scanning transmission electron microscopy images. Finally, it is shown how to optimize the experimental design so as to attain the highest precision. As an example, the optimization of the probe size for nanoparticle radius measurements is considered. It is also shown how to quantitatively balance signal-to-noise ratio and resolution by adjusting the probe size.
Keywords: A1 Journal article; Engineering Management (ENM); Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 1.98
Times cited: 7
DOI: 10.1016/j.micron.2011.10.019
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“Direct observation of ferrielectricity at ferroelastic domain boundaries in CaTiO3 by electron microscopy”. Van Aert S, Turner S, Delville R, Schryvers D, Van Tendeloo G, Salje EKH, Advanced materials 24, 523 (2012). http://doi.org/10.1002/adma.201103717
Abstract: High-resolution aberration-corrected transmission electron microscopy aided by statistical parameter estimation theory is used to quantify localized displacements at a (110) twin boundary in orthorhombic CaTiO3. The displacements are 36 pm for the Ti atoms and confined to a thin layer. This is the first direct observation of the generation of ferroelectricity by interfaces inside this material which opens the door for domain boundary engineering.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 150
DOI: 10.1002/adma.201103717
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“Functional twin boundaries”. Van Aert S, Turner S, Delville R, Schryvers D, Van Tendeloo G, Ding X, Salje EKH, Phase transitions 86, 1052 (2013). http://doi.org/10.1080/01411594.2012.748909
Abstract: Functional interfaces are at the core of research in the emerging field of domain boundary engineering where polar, conducting, chiral, and other interfaces and twin boundaries have been discovered. Ferroelectricity was found in twin walls of paraelectric CaTiO3. We show that the effect of functional interfaces can be optimized if the number of twin boundaries is increased in densely twinned materials. Such materials can be produced by shear in the ferroelastic phase rather than by rapid quench from the paraelastic phase.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.06
Times cited: 5
DOI: 10.1080/01411594.2012.748909
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“Electron channelling based crystallography”. Van Aert S, Geuens P, van Dyck D, Kisielowski C, Jinschek JR, Ultramicroscopy 107, 551 (2007). http://doi.org/10.1016/j.ultramic.2006.04.031
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.843
Times cited: 32
DOI: 10.1016/j.ultramic.2006.04.031
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“High-resolution electron microscopy and electron tomography: resolution versus precision”. Van Aert S, den Dekker AJ, van Dyck D, van den Bos A, Journal of structural biology 138, 21 (2002). http://doi.org/10.1016/S1047-8477(02)00016-3
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.767
Times cited: 33
DOI: 10.1016/S1047-8477(02)00016-3
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“The notion of resolution”. Van Aert S, den Dekker AJ, van Dyck D, van den Bos A Springer, Berlin, page 1228 (2008).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT); Vision lab
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“The notion of resolution”. Van Aert S, den Dekker AJ, van Dyck D, van den Bos A Springer, Berlin, page 1228 (2007).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT); Vision lab
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“Optimal experimental design of STEM measurement of atom column positions”. Van Aert S, den Dekker AJ, van Dyck D, van den Bos A, Ultramicroscopy 90, 273 (2002). http://doi.org/10.1016/S0304-3991(01)00152-8
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.843
Times cited: 35
DOI: 10.1016/S0304-3991(01)00152-8
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“How to optimize the experimental design of quantitative atomic resolution TEM experiments?”.Van Aert S, den Dekker AJ, van Dyck D, Micron 35, 425 (2004). http://doi.org/10.1016/j.micron.2004.01.007
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 1.98
Times cited: 14
DOI: 10.1016/j.micron.2004.01.007
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“Maximum likelihood estimation of structure parameters from high resolution electron microscopy images : part 2 : a practical example”. Van Aert S, den Dekker AJ, van den Bos A, van Dyck D, Chen JH, Ultramicroscopy 104, 107 (2005). http://doi.org/10.1016/j.ultramic.2005.03.002
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.843
Times cited: 37
DOI: 10.1016/j.ultramic.2005.03.002
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“High-resolution electron microscopy : from imaging toward measuring”. Van Aert S, den Dekker AJ, van den Bos A, van Dyck D, IEEE transactions on instrumentation and measurement 51, 611 (2002). http://doi.org/10.1109/TIM.2002.802250
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.456
Times cited: 13
DOI: 10.1109/TIM.2002.802250
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“Statistical experimental design for quantitative atomic resolution transmission electron microscopy”. Van Aert S, den Dekker AJ, van den Bos A, van Dyck D Academic Press, San Diego, Calif., page 1 (2004).
Keywords: H1 Book chapter; Electron microscopy for materials research (EMAT); Vision lab
Times cited: 13
DOI: 10.1016/S1076-5670(04)30001-7
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“High resolution electron microscopy from imaging towards measuring”. Van Aert S, den Dekker AJ, van den Bos A, Van Dyck D ... IEEE International Instrumentation and Measurement Technology Conference
T2 – Rediscovering measurement in the age of informatics : proceedings of the 18th IEEE Instrumentation and Measurement Technology Conference (IMTC), 2001: vol 3. Ieee, page 2081 (2001).
Keywords: H2 Book chapter; Electron microscopy for materials research (EMAT); Vision lab
DOI: 10.1109/IMTC.2001.929564
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“Procedure to count atoms with trustworthy single-atom sensitivity”. Van Aert S, de Backer A, Martinez GT, Goris B, Bals S, Van Tendeloo G, Rosenauer A, Physical review : B : condensed matter and materials physics 87, 064107 (2013). http://doi.org/10.1103/PhysRevB.87.064107
Abstract: We report a method to reliably count the number of atoms from high-angle annular dark field scanning transmission electron microscopy images. A model-based analysis of the experimental images is used to measure scattering cross sections at the atomic level. The high sensitivity of these measurements in combination with a thorough statistical analysis enables us to count atoms with single-atom sensitivity. The validity of the results is confirmed by means of detailed image simulations. We will show that the method can be applied to nanocrystals of arbitrary shape, size, and atom type without the need for a priori knowledge about the atomic structure.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 106
DOI: 10.1103/PhysRevB.87.064107
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“Advanced electron crystallography through model-based imaging”. Van Aert S, De Backer A, Martinez GT, den Dekker AJ, Van Dyck D, Bals S, Van Tendeloo G, IUCrJ 3, 71 (2016). http://doi.org/10.1107/S2052252515019727
Abstract: The increasing need for precise determination of the atomic arrangement of non-periodic structures in materials design and the control of nanostructures explains the growing interest in quantitative transmission electron microscopy. The aim is to extract precise and accurate numbers for unknown structure parameters including atomic positions, chemical concentrations and atomic numbers. For this purpose, statistical parameter estimation theory has been shown to provide reliable results. In this theory, observations are considered purely as data planes, from which structure parameters have to be determined using a parametric model describing the images. As such, the positions of atom columns can be measured with a precision of the order of a few picometres, even though the resolution of the electron microscope is still one or two orders of magnitude larger. Moreover, small differences in average atomic number, which cannot be distinguished visually, can be quantified using high-angle annular dark-field scanning transmission electron microscopy images. In addition, this theory allows one to measure compositional changes at interfaces, to count atoms with single-atom sensitivity, and to reconstruct atomic structures in three dimensions. This feature article brings the reader up to date, summarizing the underlying theory and highlighting some of the recent applications of quantitative model-based transmisson electron microscopy.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab; Engineering Management (ENM)
Impact Factor: 5.793
Times cited: 30
DOI: 10.1107/S2052252515019727
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“Control of Knock-On Damage for 3D Atomic Scale Quantification of Nanostructures: Making Every Electron Count in Scanning Transmission Electron Microscopy”. Van Aert S, De Backer A, Jones L, Martinez GT, Béché, A, Nellist PD, Physical review letters 122, 066101 (2019). http://doi.org/10.1103/PhysRevLett.122.066101
Abstract: Understanding nanostructures down to the atomic level is the key to optimizing the design of advancedmaterials with revolutionary novel properties. This requires characterization methods capable of quantifying the three-dimensional (3D) atomic structure with the highest possible precision. A successful approach to reach this goal is to count the number of atoms in each atomic column from 2D annular dark field scanning transmission electron microscopy images. To count atoms with single atom sensitivity, a minimum electron dose has been shown to be necessary, while on the other hand beam damage, induced by the high energy electrons, puts a limit on the tolerable dose. An important challenge is therefore to develop experimental strategies to optimize the electron dose by balancing atom-counting fidelity vs the risk of knock-on damage. To achieve this goal, a statistical framework combined with physics-based modeling of the dose-dependent processes is here proposed and experimentally verified. This model enables an investigator to theoretically predict, in advance of an experimental measurement, the optimal electron dose resulting in an unambiguous quantification of nanostructures in their native state with the highest attainable precision.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 8.462
Times cited: 3
DOI: 10.1103/PhysRevLett.122.066101
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“Linear versus non-linear structural information limit in high-resolution transmission electron microscopy”. Van Aert S, Chen JH, van Dyck D, Ultramicroscopy 110, 1404 (2010). http://doi.org/10.1016/j.ultramic.2010.07.001
Abstract: A widely used performance criterion in high-resolution transmission electron microscopy (HRTEM) is the information limit. It corresponds to the inverse of the maximum spatial object frequency that is linearly transmitted with sufficient intensity from the exit plane of the object to the image plane and is limited due to partial temporal coherence. In practice, the information limit is often measured from a diffractogram or from Young's fringes assuming a weak phase object scattering beyond the inverse of the information limit. However, for an aberration corrected electron microscope, with an information limit in the sub-angstrom range, weak phase objects are no longer applicable since they do not scatter sufficiently in this range. Therefore, one relies on more strongly scattering objects such as crystals of heavy atoms observed along a low index zone axis. In that case, dynamical scattering becomes important such that the non-linear and linear interaction may be equally important. The non-linear interaction may then set the experimental cut-off frequency observed in a diffractogram. The goal of this paper is to quantify both the linear and the non-linear information transfer in terms of closed form analytical expressions. Whereas the cut-off frequency set by the linear transfer can be directly related with the attainable resolution, information from the non-linear transfer can only be extracted using quantitative, model-based methods. In contrast to the historic definition of the information limit depending on microscope parameters only, the expressions derived in this paper explicitly incorporate their dependence on the structure parameters as well. In order to emphasize this dependence and to distinguish from the usual information limit, the expressions derived for the inverse cut-off frequencies will be referred to as the linear and non-linear structural information limit. The present findings confirm the well-known result that partial temporal coherence has different effects on the transfer of the linear and non-linear terms, such that the non-linear imaging contributions are damped less than the linear imaging contributions at high spatial frequencies. This will be important when coherent aberrations such as spherical aberration and defocus are reduced.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.843
Times cited: 6
DOI: 10.1016/j.ultramic.2010.07.001
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“Effect of amorphous layers on the interpretation of restored exit waves”. Van Aert S, Chang LY, Bals S, Kirkland AI, Van Tendeloo G, Ultramicroscopy 109, 237 (2009). http://doi.org/10.1016/j.ultramic.2008.10.024
Abstract: The effects of amorphous layers on the quality of exit wave restorations have been investigated. Two independently developed software implementations for exit wave restoration have been used to simulated focal series of images of SrTiO3 with amorphous carbon layers incorporated. The restored exit waves have been compared both qualitatively and quantitatively. We have shown that amorphous layers have a strong impact on the quantitative measurements of atomic column positions, however, the error in the position measurements is still in the picometer range.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.843
Times cited: 10
DOI: 10.1016/j.ultramic.2008.10.024
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“Three-dimensional atomic imaging of crystalline nanoparticles”. Van Aert S, Batenburg KJ, Rossell MD, Erni R, Van Tendeloo G, Nature 470, 374 (2011). http://doi.org/10.1038/nature09741
Abstract: Determining the three-dimensional (3D) arrangement of atoms in crystalline nanoparticles is important for nanometre-scale device engineering and also for applications involving nanoparticles, such as optoelectronics or catalysis. A nanoparticles physical and chemical properties are controlled by its exact 3D morphology, structure and composition1. Electron tomography enables the recovery of the shape of a nanoparticle from a series of projection images2, 3, 4. Although atomic-resolution electron microscopy has been feasible for nearly four decades, neither electron tomography nor any other experimental technique has yet demonstrated atomic resolution in three dimensions. Here we report the 3D reconstruction of a complex crystalline nanoparticle at atomic resolution. To achieve this, we combined aberration-corrected scanning transmission electron microscopy5, 6, 7, statistical parameter estimation theory8, 9 and discrete tomography10, 11. Unlike conventional electron tomography, only two images of the targeta silver nanoparticle embedded in an aluminium matrixare sufficient for the reconstruction when combined with available knowledge about the particles crystallographic structure. Additional projections confirm the reliability of the result. The results we present help close the gap between the atomic resolution achievable in two-dimensional electron micrographs and the coarser resolution that has hitherto been obtained by conventional electron tomography.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 40.137
Times cited: 341
DOI: 10.1038/nature09741
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“Atomen tellen”. Van Aert S, Batenburg J, Van Tendeloo S, Nederlands tijdschrift voor natuurkunde (1991) 77, 292 (2011)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT); Vision lab
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“The benefits of statistical parameter estimation theory for quantitative interpretation of electron microscopy data”. Van Aert S, Bals S, Chang LY, den Dekker AJ, Kirkland AI, Van Dyck D, Van Tendeloo G Springer, Berlin, page 97 (2008).
Keywords: H1 Book chapter; Electron microscopy for materials research (EMAT); Vision lab
DOI: 10.1007/978-3-540-85156-1_49
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Van Aert S (2011) Atomen in 3D : Antwerpenaren brengen atomaire structuur nanodeeltjes in beeld. 9
Keywords: Newspaper/Magazine/blog article; Electron microscopy for materials research (EMAT)
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“Meer zien met onzichtbaar licht”. Van Aert S, Karakter : tijdschrift van wetenschap 18, 19 (2007)
Keywords: A2 Journal article; Electron microscopy for materials research (EMAT)
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“Statistical parameter estimation theory : a tool for quantitative electron microscopy”. Van Aert S Wiley-VCH, Weinheim, page 281 (2012).
Keywords: H1 Book chapter; Electron microscopy for materials research (EMAT)
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“Additivity of Atomic Strain Fields as a Tool to Strain-Engineering Phase-Stabilized CsPbI3Perovskites”. Teunissen JL, Braeckevelt T, Skvortsova I, Guo J, Pradhan B, Debroye E, Roeffaers MBJ, Hofkens J, Van Aert S, Bals S, Rogge SMJ, Van Speybroeck V, The Journal of Physical Chemistry C 127, 23400 (2023). http://doi.org/10.1021/acs.jpcc.3c05770
Abstract: CsPbI3 is a promising perovskite material for photovoltaic applications in its photoactive perovskite or black phase. However, the material degrades to a photovoltaically inactive or yellow phase at room temperature. Various mitigation strategies are currently being developed to increase the lifetime of the black phase, many of which rely on inducing strains in the material that hinder the black-to-yellow phase transition. Physical insight into how these strategies exactly induce strain as well as knowledge of the spatial extent over which these strains impact the material is crucial to optimize these approaches but is still lacking. Herein, we combine machine learning potential-based molecular dynamics simulations with our in silico strain engineering approach to accurately quantify strained large-scale atomic structures on a nanosecond time scale. To this end, we first model the strain fields introduced by atomic substitutions as they form the most elementary strain sources. We demonstrate that the magnitude of the induced strain fields decays exponentially with the distance from the strain source, following a decay rate that is largely independent of the specific substitution. Second, we show that the total strain field induced by multiple strain sources can be predicted to an excellent approximation by summing the strain fields of each individual source. Finally, through a case study, we illustrate how this additive character allows us to explain how complex strain fields, induced by spatially extended strain sources, can be predicted by adequately combining the strain fields caused by local strain sources. Hence, the strain additivity proposed here can be adopted to further our insight into the complex strain behavior in perovskites and to design strain from the atomic level onward to enhance their sought-after phase stability.
Keywords: A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
Impact Factor: 3.7
DOI: 10.1021/acs.jpcc.3c05770
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“Mapping electronic reconstruction at the metal-insulator interface in LaVO3/SrVO3 heterostructures”. Tan H, Egoavil R, Béché, A, Martinez GT, Van Aert S, Verbeeck J, Van Tendeloo G, Rotella H, Boullay P, Pautrat A, Prellier W, Physical review : B : condensed matter and materials physics 88, 155123 (2013). http://doi.org/10.1103/PhysRevB.88.155123
Abstract: A (LaVO3)6/(SrVO3)(3) superlattice is studied with a combination of sub-A resolved scanning transmission electron microscopy and monochromated electron energy-loss spectroscopy. The V oxidation state is mapped with atomic spatial resolution enabling us to investigate electronic reconstruction at the LaVO3/SrVO3 interfaces. Surprisingly, asymmetric charge distribution is found at adjacent chemically symmetric interfaces. The local structure is proposed and simulated with a double channeling calculation which agrees qualitatively with our experiment. We demonstrate that local strain asymmetry is the likely cause of the electronic asymmetry of the interfaces. The electronic reconstruction at the interfaces extends much further than the chemical composition, varying from 0.5 to 1.2 nm. This distance corresponds to the length of charge transfer previously found in the (LaVO3)./(SrVO3). metal/insulating and the (LaAlO3)./(SrTiO3). insulating/insulating interfaces.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 15
DOI: 10.1103/PhysRevB.88.155123
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