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“Strain enhancement of acoustic phonon limited mobility in monolayer TiS3”. Aierken Y, Çakir D, Peeters FM, Physical chemistry, chemical physics 18, 14434 (2016). http://doi.org/10.1039/c6cp01809b
Abstract: Strain engineering is an effective way to tune the intrinsic properties of a material. Here, we show by using first-principles calculations that both uniaxial and biaxial tensile strain applied to monolayer TiS3 are able to significantly modify its intrinsic mobility. From the elastic modulus and the phonon dispersion relation we determine the tensile strain range where structure dynamical stability of the monolayer is guaranteed. Within this region, we find more than one order of enhancement of the acoustic phonon limited mobility at 300 K (100 K), i.e. from 1.71 x 10(4) (5.13 x 10(4)) cm(2) V-1 s(-1) to 5.53 x 10(6) (1.66 x 10(6)) cm(2) V-1 s(-1). The degree of anisotropy in both mobility and effective mass can be tuned by using tensile strain. Furthermore, we can either increase or decrease the band gap of TiS3 monolayer by applying strain along different crystal directions. This property allows us to use TiS3 not only in electronic but also in optical applications.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 4.123
Times cited: 24
DOI: 10.1039/c6cp01809b
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Aierken Y (2017) First-principles studies of novel two-dimensional materials and their physical properties. Antwerpen
Keywords: Doctoral thesis; Condensed Matter Theory (CMT)
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“Multiband flattening and linear Dirac band structure in graphene with impurities”. Ahmadkhani S, Alihosseini M, Ghasemi S, Ahmadabadi I, Hassani N, Peeters FM, Neek-Amal M, Physical review B 107, 075401 (2023). http://doi.org/10.1103/PHYSREVB.107.075401
Abstract: Flat bands in the energy spectrum have attracted a lot of attention in recent years because of their unique properties and promising applications. Special arrangement of impurities on monolayer graphene are proposed to generate multiflat bands in the electronic band structure. In addition to the single midgap states in the spectrum of graphene with low hydrogen density, we found closely spaced bands around the Fermi level with increasing impurity density, which are similar to discrete lines in the spectrum of quantum dots, as well as the unusual Landau-level energy spectrum of graphene in the presence of a strong magnetic field. The presence of flat bands crucially depends on whether or not there are odd or even electrons of H(F) atoms bound to graphene. Interestingly, we found that a fully hydrogenated (fluoridated) of a hexagon of graphene sheet with six hydrogen (fluorine) atoms sitting on top and bottom in consecutive order exhibits Dirac cones in the electronic band structure with a 20% smaller Fermi velocity as compared to the pristine graphene. Functionalizing graphene introduces various C-C bond lengths resulting in nonuniform strains. Such a nonuniform strain may induce a giant pseudomagnetic field in the system, resulting in quantum Hall effect.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.7
Times cited: 1
DOI: 10.1103/PHYSREVB.107.075401
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“Preface”. Aguiar JA, Roa-Rojas J, Parra Vargas CA, Landinez Tellez DA, Corredor Bohorquez LT, Shanenko A, Jardim RF, Peeters F, Physica: B : condensed matter 455, 1 (2014). http://doi.org/10.1016/j.physb.2014.05.013
Keywords: Editorial; Condensed Matter Theory (CMT)
Impact Factor: 1.386
DOI: 10.1016/j.physb.2014.05.013
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“Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors”. Agarwal T, Sorée B, Radu I, Raghavan P, Fiori G, Iannaccone G, Thean A, Heyns M, Dehaene W, Applied physics letters 108, 023506 (2016). http://doi.org/10.1063/1.4939933
Abstract: Conventional junctionless (JL) multi/gate (MuG) field-effect transistors (FETs) require extremely scaled channels to deliver high on-state current with low short-channel effect related leakage. In this letter, using ultra-thin 2D materials (e.g., monolayer MoS2), we present comparison of short-channel effects in JL, and inversion-mode (IM) FETs. We show that JL FETs exhibit better sub-threshold slope (S.S.) and drain-induced-barrier-lowering (DIBL) in comparison to IM FETs due to reduced peak electric field at the junctions. But, threshold voltage (VT) roll-off with channel length downscaling is found to be significantly higher in JL FETs than IM FETs, due to higher source/drain controlled charges (dE/dx) in the channel. Further, we show that although VT roll-off in JL FETs improves by increasing the gate control, i.e., by scaling the oxide, or channel thickness, the sensitivity of threshold voltage on structural parameters is found out to be high. (C) 2016 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 13
DOI: 10.1063/1.4939933
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“Onset, evolution, and magnetic braking of vortex lattice instabilities in nanostructured superconducting films”. Adami O-A, Jelić, ŽL, Xue C, Abdel-Hafiez M, Hackens B, Moshchalkov VV, Milošević, MV, Van de Vondel J, Silhanek AV, Physical review: B: condensed matter and materials physics 92, 134506 (2015). http://doi.org/10.1103/PhysRevB.92.134506
Abstract: In 1976, Larkin and Ovchinnikov [Zh. Eksp. Teor. Fiz. 68, 1915 (1975) [Sov. Phys.–JETP 41, 960 (1976)]] predicted that vortex matter in superconductors driven by an electrical current can undergo an abrupt dynamic transition from a flux-flow regime to a more dissipative state at sufficiently high vortex velocities. Typically, this transition manifests itself as a large voltage jump at a particular current density, so-called instability current density J∗, which is smaller than the depairing current. By tuning the effective pinning strength in Al films, using an artificial periodic pinning array of triangular holes, we show that a unique and well-defined instability current density exists if the pinning is strong, whereas a series of multiple voltage transitions appear in the relatively weaker pinning regime. This behavior is consistent with time-dependent Ginzburg-Landau simulations, where the multiple-step transition can be unambiguously attributed to the progressive development of vortex chains and subsequently phase-slip lines. In addition, we explore experimentally the magnetic braking effects, caused by a thick Cu layer deposited on top of the superconductor, on the instabilities and the vortex ratchet effect.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 21
DOI: 10.1103/PhysRevB.92.134506
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“Anomalous dynamical behavior of freestanding graphene membranes”. Ackerman ML, Kumar P, Neek-Amal M, Thibado PM, Peeters FM, Singh S, Physical review letters 117, 126801 (2016). http://doi.org/10.1103/PHYSREVLETT.117.126801
Abstract: We report subnanometer, high-bandwidth measurements of the out-of-plane (vertical) motion of atoms in freestanding graphene using scanning tunneling microscopy. By tracking the vertical position over a long time period, a 1000-fold increase in the ability to measure space-time dynamics of atomically thin membranes is achieved over the current state-of-the-art imaging technologies. We observe that the vertical motion of a graphene membrane exhibits rare long-scale excursions characterized by both anomalous mean-squared displacements and Cauchy-Lorentz power law jump distributions.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 8.462
Times cited: 46
DOI: 10.1103/PHYSREVLETT.117.126801
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“Alternating superconducting and charge density wave monolayers within bulk 6R-TaS₂”. Achari A, Bekaert J, Sreepal V, Orekhov A, Kumaravadivel P, Kim M, Gauquelin N, Pillai PB, Verbeeck J, Peeters FM, Geim AK, Milošević, MV, Nair RR, Nano letters 22, 6268 (2022). http://doi.org/10.1021/ACS.NANOLETT.2C01851
Abstract: Van der Waals (vdW) heterostructures continue to attract intense interest as a route of designing materials with novel properties that cannot be found in nature. Unfortunately, this approach is currently limited to only a few layers that can be stacked on top of each other. Here, we report a bulk vdW material consisting of superconducting 1H TaS2 monolayers interlayered with 1T TaS2 monolayers displaying charge density waves (CDW). This bulk vdW heterostructure is created by phase transition of 1T-TaS2 to 6R at 800 degrees C in an inert atmosphere. Its superconducting transition (T-c) is found at 2.6 K, exceeding the T-c of the bulk 2H phase. Using first-principles calculations, we argue that the coexistence of superconductivity and CDW within 6R-TaS2 stems from amalgamation of the properties of adjacent 1H and 1T monolayers, where the former dominates the superconducting state and the latter the CDW behavior.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 10.8
Times cited: 12
DOI: 10.1021/ACS.NANOLETT.2C01851
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“Prediction of novel two-dimensional Dirac nodal line semimetals in Al₂B₂, and AlB₄, monolayers”. Abedi S, Sisakht ET, Hashemifar SJ, Cherati NG, Sarsari IA, Peeters FM, Nanoscale 14, 11270 (2022). http://doi.org/10.1039/D2NR00888B
Abstract: Topological semimetal phases in two-dimensional (2D) materials have gained widespread interest due to their potential applications in novel nanoscale devices. Despite the growing number of studies on 2D topological nodal lines (NLs), candidates with significant topological features that combine nontrivial topological semimetal phase with superconductivity are still rare. Herein, we predict Al2B2 and AlB4 monolayers as new 2D nonmagnetic Dirac nodal line semimetals with several novel features. Our extensive electronic structure calculations combined with analytical studies reveal that, in addition to multiple Dirac points, these 2D configurations host various highly dispersed NLs around the Fermi level, all of which are semimetal states protected by time-reversal and in-plane mirror symmetries. The most intriguing NL in Al2B2 encloses the K point and crosses the Fermi level, showing a considerable dispersion and thus providing a fresh playground to explore exotic properties in dispersive Dirac nodal lines. More strikingly, for the AlB4 monolayer, we provide the first evidence for a set of 2D nonmagnetic open type-II NLs coexisting with superconductivity at a rather high transition temperature. The coexistence of superconductivity and nontrivial band topology in AlB4 not only makes it a promising material to exhibit novel topological superconducting phases, but also a rather large energy dispersion of type-II nodal lines in this configuration may offer a platform for the realization of novel topological features in the 2D limit.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 6.7
Times cited: 5
DOI: 10.1039/D2NR00888B
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“TMDlib2 and TMDplotter : a platform for 3D hadron structure studies”. Abdulov NA, Bacchetta A, Baranov S, Martinez AB, Bertone V, Bissolotti C, Candelise V, Banos LIE, Bury M, Connor PLS, Favart L, Guzman F, Hautmann F, Hentschinski M, Jung H, Keersmaekers L, Kotikov A, Kusina A, Kutak K, Lelek A, Lidrych J, Lipatov A, Lykasov G, Malyshev M, Mendizabal M, Prestel S, Barzani SS, Sapeta S, Schmitz M, Signori A, Sorrentino G, Monfared ST, van Hameren A, van Kampen AM, Vanden Bemden M, Vladimirov A, Wang Q, Yang H, European Physical Journal C 81, 752 (2021). http://doi.org/10.1140/EPJC/S10052-021-09508-8
Abstract: A common library, TMDlib2, for Transverse-Momentum-Dependent distributions (TMDs) and unintegrated parton distributions (uPDFs) is described, which allows for easy access of commonly used TMDs and uPDFs, providing a three-dimensional (3D) picture of the partonic structure of hadrons. The tool TMDplotter allows for web-based plotting of distributions implemented in TMDlib2, together with collinear pdfs as available in LHAPDF.
Keywords: A1 Journal article; Particle Physics Group; Condensed Matter Theory (CMT)
Impact Factor: 5.331
DOI: 10.1140/EPJC/S10052-021-09508-8
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“Gate tunable layer selectivity of transport in bilayer graphene nanostructures”. Abdullah HM, Zarenia M, Bahlouli H, Peeters FM, Van Duppen B, Europhysics letters 113, 17006 (2016). http://doi.org/10.1209/0295-5075/113/17006
Abstract: Recently it was found that bilayer graphene may exhibit regions with and without van der Waals coupling between the two layers. We show that such structures can exhibit a strong layer selectivity when current flows through the coupled region and that this selectivity can be tuned by means of electrostatic gating. Analysing how this effect depends on the type of bilayer stacking, the potential on the gates and the smoothness of the boundary between the coupled and decoupled regions, we show that nearly perfect layer selectivity is achievable in these systems. This effect can be further used to realise a tunable layer switch.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.957
Times cited: 15
DOI: 10.1209/0295-5075/113/17006
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“Quantum transport across van der Waals domain walls in bilayer graphene”. Abdullah HM, Van Duppen B, Zarenia M, Bahlouli H, Peeters FM, Journal of physics : condensed matter 29, 425303 (2017). http://doi.org/10.1088/1361-648X/AA81A8
Abstract: Bilayer graphene can exhibit deformations such that the two graphene sheets are locally detached from each other resulting in a structure consisting of domains with different van der Waals inter-layer coupling. Here we investigate how the presence of these domains affects the transport properties of bilayer graphene. We derive analytical expressions for the transmission probability, and the corresponding conductance, across walls separating different inter-layer coupling domains. We find that the transmission can exhibit a valley-dependent layer asymmetry and that the domain walls have a considerable effect on the chiral tunnelling properties of the charge carriers. We show that transport measurements allow one to obtain the strength with which the two layers are coupled. We perform numerical calculations for systems with two domain walls and find that the availability of multiple transport channels in bilayer graphene significantly modifies the conductance dependence on inter-layer potential asymmetry.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.649
Times cited: 15
DOI: 10.1088/1361-648X/AA81A8
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“Graphene quantum blisters : a tunable system to confine charge carriers”. Abdullah HM, Van der Donck M, Bahlouli H, Peeters FM, Van Duppen B, Applied physics letters 112, 213101 (2018). http://doi.org/10.1063/1.5023896
Abstract: Due to Klein tunneling, electrostatic confinement of electrons in graphene is not possible. This hinders the use of graphene for quantum dot applications. Only through quasi-bound states with finite lifetime has one achieved to confine charge carriers. Here, we propose that bilayer graphene with a local region of decoupled graphene layers is able to generate bound states under the application of an electrostatic gate. The discrete energy levels in such a quantum blister correspond to localized electron and hole states in the top and bottom layers. We find that this layer localization and the energy spectrum itself are tunable by a global electrostatic gate and that the latter also coincides with the electronic modes in a graphene disk. Curiously, states with energy close to the continuum exist primarily in the classically forbidden region outside the domain defining the blister. The results are robust against variations in size and shape of the blister which shows that it is a versatile system to achieve tunable electrostatic confinement in graphene. Published by AIP Publishing.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 9
DOI: 10.1063/1.5023896
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“Electron collimation at van der Waals domain walls in bilayer graphene”. Abdullah HM, da Costa DR, Bahlouli H, Chaves A, Peeters FM, Van Duppen B, Physical review B 100, 045137 (2019). http://doi.org/10.1103/PHYSREVB.100.045137
Abstract: We show that a domain wall separating single-layer graphene and AA-stacked bilayer graphene (AA-BLG) can be used to generate highly collimated electron beams which can be steered by a magnetic field. Two distinct configurations are studied, namely, locally delaminated AA-BLG and terminated AA-BLG whose terminal edge types are assumed to be either zigzag or armchair. We investigate the electron scattering using semiclassical dynamics and verify the results independently with wave-packet dynamics simulations. We find that the proposed system supports two distinct types of collimated beams that correspond to the lower and upper cones in AA-BLG. Our computational results also reveal that collimation is robust against the number of layers connected to AA-BLG and terminal edges.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 12
DOI: 10.1103/PHYSREVB.100.045137
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“Confined states in graphene quantum blisters”. Abdullah HM, Bahlouli H, Peeters FM, Van Duppen B, Journal of physics : condensed matter 30, 385301 (2018). http://doi.org/10.1088/1361-648X/AAD9C7
Abstract: Bilayer graphene samples may exhibit regions where the two layers are locally delaminated forming a so-called quanttun blister in the graphene sheet. Electron and hole states can be confined in this graphene quantum blisters (GQB) by applying a global electrostatic bias. We scrutinize the electronic properties of these confined states under the variation of interlayer bias, coupling, and blister's size. The spectra display strong anti-crossings due to the coupling of the confined states on upper and lower layers inside the blister. These spectra are layer localized where the respective confined states reside on either layer or equally distributed. For finite angular momentum, this layer localization can be at the edge of the blister and corresponds to degenerate modes of opposite momenta. Furthermore, the energy levels in GQB exhibit electron-hole symmetry that is sensitive to the electrostatic bias. Finally, we demonstrate that confinement in GQB persists even in the presence of a variation in the interlayer coupling.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.649
Times cited: 6
DOI: 10.1088/1361-648X/AAD9C7
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“Interplay between s-d exchange interaction and Rashba effect: spin-polarized transport”. Yang W, Chang K, Wu XG, Zheng HZ, Peeters FM;, Applied physics letters 89 (2006). http://doi.org/10.1063/1.2357888
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 10
DOI: 10.1063/1.2357888
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“Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering”. Yang S, Wang C, Sahin H, Chen H, Li Y, Li SS, Suslu A, Peeters FM, Liu Q, Li J, Tongay S;, Nano letters 15, 1660 (2015). http://doi.org/10.1021/nl504276u
Abstract: Creating materials with ultimate control over their physical properties is vital for a wide range of applications. From a traditional materials design perspective, this task often requires precise control over the atomic composition and structure. However, owing to their mechanical properties, low-dimensional layered materials can actually withstand a significant amount of strain and thus sustain elastic deformations before fracture. This, in return, presents a unique technique for tuning their physical properties by strain engineering. Here, we find that local strain induced on ReSe2, a new member of the transition metal dichalcogenides family, greatly changes its magnetic, optical, and electrical properties. Local strain induced by generation of wrinkle (1) modulates the optical gap as evidenced by red-shifted photoluminescence peak, (2) enhances light emission, (3) induces magnetism, and (4) modulates the electrical properties. The results not only allow us to create materials with vastly different properties at the nanoscale, but also enable a wide range of applications based on 2D materials, including strain sensors, stretchable electrodes, flexible field-effect transistors, artificial-muscle actuators, solar cells, and other spintronic, electromechanical, piezoelectric, photonic devices.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 12.712
Times cited: 314
DOI: 10.1021/nl504276u
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“Multilayer graphene, Moire patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC”. Xu P, Qi D, Schoelz JK, Thompson J, Thibado PM, Wheeler VD, Nyakiti LO, Myers-Ward RL, Eddy CR, Gaskill DK, Neek-Amal M, Peeters FM;, Carbon 80, 75 (2014). http://doi.org/10.1016/j.carbon.2014.08.028
Abstract: Epitaxial graphene is grown on a non-polar n(+) 6H-SiC m-plane substrate and studied using atomic scale scanning tunneling microscopy. Multilayer graphene is found throughout the surface and exhibits rotational disorder. Moire patterns of different spatial periodicities are found, and we found that as the wavelength increases, so does the amplitude of the modulations. This relationship reveals information about the interplay between the energy required to bend graphene and the interaction energy, i.e. van der Waals energy, with the graphene layer below. Our experiments are supported by theoretical calculations which predict that the membrane topographical amplitude scales with the Moire pattern wavelength, L as L-1 + alpha L-2. (C) 2014 Elsevier Ltd. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 6.337
Times cited: 14
DOI: 10.1016/j.carbon.2014.08.028
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“Self-organized platinum nanoparticles on freestanding graphene”. Xu P, Dong L, Neek-Amal M, Ackerman ML, Yu J, Barber SD, Schoelz JK, Qi D, Xu F, Thibado PM, Peeters FM;, ACS nano 8, 2697 (2014). http://doi.org/10.1021/nn406394f
Abstract: Freestanding graphene membranes were successfully functionalized with platinum nanoparticles (Pt NPs). High-resolution transmission electron microscopy revealed a homogeneous distribution of single-crystal Pt NPs that tend to exhibit a preferred orientation. Unexpectedly, the NPs were also found to be partially exposed to the vacuum with the top Pt surface raised above the graphene substrate, as deduced from atomic-scale scanning tunneling microscopy images and detailed molecular dynamics simulations. Local strain accumulation during the growth process is thought to be the origin of the NP self-organization. These findings are expected to shape future approaches in developing Pt NP catalysts for fuel cells as well as NP-functionalized graphene-based high-performance electronics.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 13.942
Times cited: 38
DOI: 10.1021/nn406394f
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“New family of graphene-based organic semiconductors : an investigation of photon-induced electronic structure manipulation in half-fluorinated graphene”. Walter AL, Sahin H, Kang J, Jeon KJ, Bostwick A, Horzum S, Moreschini L, Chang YJ, Peeters FM, Horn K, Rotenberg E;, Physical review B 93, 075439 (2016). http://doi.org/10.1103/PhysRevB.93.075439
Abstract: The application of graphene to electronic and optoelectronic devices is limited by the absence of reliable semiconducting variants of this material. A promising candidate in this respect is graphene oxide, with a band gap on the order of similar to 5 eV, however, this has a finite density of states at the Fermi level. Here, we examine the electronic structure of three variants of half-fluorinated carbon on Sic(0001), i.e., the (6 root 3 x 6 root 3) R30 degrees C/SiC “buffer layer,” graphene on this (6 root 3 x 6 root 3) R30 degrees C/SiC buffer layer, and graphene decoupled from the SiC substrate by hydrogen intercalation. Using angle-resolved photoemission, core level photoemission, and x-ray absorption, we show that the electronic, chemical, and physical structure of all three variants is remarkably similar, exhibiting a large band gap and a vanishing density of states at the Fermi level. These results are explained in terms of first-principles calculations. This material thus appears very suitable for applications, even more so since it is prepared on a processing-friendly substrate. We also investigate two separate UV photon-induced modifications of the electronic structure that transform the insulating samples (6.2-eV band gap) into semiconducting (similar to 2.5-eV band gap) and metallic regions, respectively.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 5
DOI: 10.1103/PhysRevB.93.075439
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“Luminescence, patterned metallic regions, and photon-mediated electronic changes in single-sided fluorinated graphene sheets”. Walter AL, Sahin H, Jeon KJ, Bostwick A, Horzum S, Koch R, Speck F, Ostler M, Nagel P, Merz M, Schupler S, Moreschini L, Chang YJ, Seyller T, Peeters FM, Horn K, Rotenberg E;, ACS nano 8, 7801 (2014). http://doi.org/10.1021/nn501163c
Abstract: Single-sided fluorination has been predicted to open an electronic band gap in graphene and to exhibit unique electronic and magnetic properties; however, this has not been substantiated by experimental reports. Our comprehensive experimental and theoretical study of this material on a SiC(0001) substrate shows that single-sided fluorographene exhibits two phases, a stable one with a band gap of similar to 6 eV and a metastable one, induced by UV irradiation, with a band gap of similar to 2.5 eV. The metastable structure, which reverts to the stable “ground-state” phase upon annealing under emission of blue light, in our view is induced by defect states, based on the observation of a nondispersive electronic state at the top of the valence band, not unlike that found in organic molecular layers. Our structural data show that the stable C2F ground state has a “boat” structure, in agreement with our X-ray magnetic circular dichroism data, which show the absence of an ordered magnetic phase. A high flux of UV or X-ray photons removes the fluorine atoms, demonstrating the possibility of lithographically patterning conducting regions into an otherwise semiconducting 2D material.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 13.942
Times cited: 23
DOI: 10.1021/nn501163c
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“Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling”. Tongay S, Sahin H, Ko C, Luce A, Fan W, Liu K, Zhou J, Huang YS, Ho CH, Yan J, Ogletree DF, Aloni S, Ji J, Li S, Li J, Peeters FM, Wu J;, Nature communications 5, 3252 (2014). http://doi.org/10.1038/ncomms4252
Abstract: Semiconducting transition metal dichalcogenides consist of monolayers held together by weak forces where the layers are electronically and vibrationally coupled. Isolated monolayers show changes in electronic structure and lattice vibration energies, including a transition from indirect to direct bandgap. Here we present a new member of the family, rhenium disulphide (ReS2), where such variation is absent and bulk behaves as electronically and vibrationally decoupled monolayers stacked together. From bulk to monolayers, ReS2 remains direct bandgap and its Raman spectrum shows no dependence on the number of layers. Interlayer decoupling is further demonstrated by the insensitivity of the optical absorption and Raman spectrum to interlayer distance modulated by hydrostatic pressure. Theoretical calculations attribute the decoupling to Peierls distortion of the 1T structure of ReS2, which prevents ordered stacking and minimizes the interlayer overlap of wavefunctions. Such vanishing interlayer coupling enables probing of two-dimensional-like systems without the need for monolayers.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 12.124
Times cited: 806
DOI: 10.1038/ncomms4252
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“Unusual dimensionality effects and surface charge density in 2D Mg(OH)2”. Suslu A, Wu K, Sahin H, Chen B, Yang S, Cai H, Aoki T, Horzum S, Kang J, Peeters FM, Tongay S;, Scientific reports 6, 20525 (2016). http://doi.org/10.1038/srep20525
Abstract: We present two-dimensional Mg(OH)(2) sheets and their vertical heterojunctions with CVD-MoS2 for the first time as flexible 2D insulators with anomalous lattice vibration and chemical and physical properties. New hydrothermal crystal growth technique enabled isolation of environmentally stable monolayer Mg(OH)(2) sheets. Raman spectroscopy and vibrational calculations reveal that the lattice vibrations of Mg(OH)(2) have fundamentally different signature peaks and dimensionality effects compared to other 2D material systems known to date. Sub-wavelength electron energy-loss spectroscopy measurements and theoretical calculations show that Mg(OH)(2) is a 6 eV direct-gap insulator in 2D, and its optical band gap displays strong band renormalization effects from monolayer to bulk, marking the first experimental confirmation of confinement effects in 2D insulators. Interestingly, 2D-Mg(OH)(2) sheets possess rather strong surface polarization (charge) effects which is in contrast to electrically neutral h-BN materials. Using 2D-Mg(OH)(2) sheets together with CVD-MoS2 in the vertical stacking shows that a strong change transfer occurs from n-doped CVD-MoS2 sheets to Mg(OH)(2), naturally depleting the semiconductor, pushing towards intrinsic doping limit and enhancing overall optical performance of 2D semiconductors. Results not only establish unusual confinement effects in 2D-Mg(OH)(2), but also offer novel 2D-insulating material with unique physical, vibrational, and chemical properties for potential applications in flexible optoelectronics.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 4.259
Times cited: 39
DOI: 10.1038/srep20525
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“InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models”. Smets Q, Verreck D, Verhulst AS, Rooyackers R, Merckling C, Van De Put M, Simoen E, Vandervorst W, Collaert N, Thean VY, Sorée B, Groeseneken G, Heyns MM;, Journal of applied physics 115, 184503 (2014). http://doi.org/10.1063/1.4875535
Abstract: Promising predictions are made for III-V tunnel-field-effect transistor (FET), but there is still uncertainty on the parameters used in the band-to-band tunneling models. Therefore, two simulators are calibrated in this paper; the first one uses a semi-classical tunneling model based on Kane's formalism, and the second one is a quantum mechanical simulator implemented with an envelope function formalism. The calibration is done for In0.53Ga0.47As using several p+/intrinsic/n+ diodes with different intrinsic region thicknesses. The dopant profile is determined by SIMS and capacitance-voltage measurements. Error bars are used based on statistical and systematic uncertainties in the measurement techniques. The obtained parameters are in close agreement with theoretically predicted values and validate the semi-classical and quantum mechanical models. Finally, the models are applied to predict the input characteristics of In0.53Ga0.47As n- and p-lineTFET, with the n-lineTFET showing competitive performance compared to MOSFET.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 34
DOI: 10.1063/1.4875535
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“Influence of artificial pinning on vortex lattice instability in superconducting films”. Silhanek AV, Leo A, Grimaldi G, Berdiyorov GR, Milošević, MV, Nigro A, Pace S, Verellen N, Gillijns W, Metlushko V, Ilić, B, Zhu X, Moshchalkov VV;, New journal of physics 14, 053006 (2012). http://doi.org/10.1088/1367-2630/14/5/053006
Abstract: In superconducting films under an applied dc current, we analyze experimentally and theoretically the influence of engineered pinning on the vortex velocity at which the flux-flow dissipation undergoes an abrupt transition from low to high resistance. We argue, based on a nonuniform distribution of vortex velocity in the sample, that in strongly disordered systems the mean critical vortex velocity for flux-flow instability (i) has a nonmonotonic dependence on magnetic field and (ii) decreases as the pinning strength is increased. These findings challenge the generally accepted microscopic model of Larkin and Ovchinnikov (1979 J. Low. Temp. Phys. 34 409) and all subsequent refinements of this model which ignore the presence of pinning centers.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.786
Times cited: 40
DOI: 10.1088/1367-2630/14/5/053006
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“Vortex detection and quantum transport in mesoscopic graphene Josephson-junction arrays”. Richardson CL, Edkins SD, Berdiyorov GR, Chua CJ, Griffiths JP, Jones GAC, Buitelaar MR, Narayan V, Sfigakis F, Smith CG, Covaci L, Connolly MR;, Physical review : B : condensed matter and materials physics 91, 245418 (2015). http://doi.org/10.1103/PhysRevB.91.245418
Abstract: We investigate mesoscopic Josephson-junction arrays created by patterning superconducting disks on monolayer graphene, concentrating on the high-T/T-c regime of these devices and the phenomena which contribute to the superconducting glass state in diffusive arrays. We observe features in the magnetoconductance at rational fractions of flux quanta per array unit cell, which we attribute to the formation of flux-quantized vortices. The applied fields at which the features occur are well described by Ginzburg-Landau simulations that take into account the number of unit cells in the array. We find that the mean conductance and universal conductance fluctuations are both enhanced below the critical temperature and field of the superconductor, with greater enhancement away from the graphene Dirac point.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 2
DOI: 10.1103/PhysRevB.91.245418
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“Engineering excitonic dynamics and environmental stability of post-transition metal chalcogenides by pyridine functionalization technique”. Meng X, Pant A, Cai H, Kang J, Sahin H, Chen B, Wu K, Yang S, Suslu A, Peeters FM, Tongay S;, Nanoscale 7, 17109 (2015). http://doi.org/10.1039/c5nr04879f
Abstract: http://cmt.ua.ac.be/hsahin/publishedpapers/46.pdf
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 7.367
Times cited: 11
DOI: 10.1039/c5nr04879f
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“A new method to calculate leakage current and its applications for sub-45nm MOSFETs”. Lujan GS, Magnus W, Soree B, Pourghaderi MA, Veloso A, van Dal MJH, Lauwers A, Kubicek S, De Gendt S, Heyns M, De Meyer K, Solid-State Device Research (ESSDERC), European Conference
T2 – ESSDERC 2005 : proceedings of 35th European Solid-State Device Research Conference, September 12-16, 2005, Grenoble, France. Ieee, S.l., page 489 (2005).
Abstract: This paper proposes a new quantum mechanical model for the calculation of leakage currents. The model incorporates both variational calculus and the transfer matrix method to compute the subband energies and the life times of the inversion layer states. The use of variational calculus simplifies the subband energy calculation due to the analytical firm of the wave functions, which offers an attractive perspective towards the calculation of the electron mobility in the channel. The model can be extended to high-k dielectrics with several layers. Good agreement between experimental data and simulation results is obtained for metal gate capacitors.
Keywords: H1 Book chapter; Condensed Matter Theory (CMT)
DOI: 10.1109/ESSDER.2005.1546691
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“Resonant tunnelling through D- states”. Lok JGS, Geim AK, Maan JC, Marmorkos I, Peeters FM, Mori N, Eaves L, McDonnell P, Henini M, Sakai JW, Main PC;, Surface science : a journal devoted to the physics and chemistry of interfaces
T2 –, 11th International Conference on the Electronic Properties of 2-Dimensional Systems (EP2DS XI), August 07-11, 1995, Univ. Nottingham, Nottingham, England 362, 247 (1996). http://doi.org/10.1016/0039-6028(96)00395-0
Abstract: We have studied tunnelling through Si donors incorporated in the quantum well of double barrier resonant tunnelling devices. In addition to a resonance associated with the ground state of a single donor (1s level), a novel donor-related resonance at a smaller binding energy is observed in high magnetic fields where it becomes dominant over the Is resonance. We attribute this novel feature to a D-minus state of a shallow donor.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.925
DOI: 10.1016/0039-6028(96)00395-0
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“Collapse of the low temperature insulating state in Cr-doped V2O3 thin films”. Homm P, Dillemans L, Menghini M, Van Bilzen B, Bakalov P, Su CY, Lieten R, Houssa M, Nasr Esfahani D, Covaci L, Peeters FM, Seo JW, Locquet JP;, Applied physics letters 107, 111904 (2015). http://doi.org/10.1063/1.4931372
Abstract: We have grown epitaxial Cr-doped V2O3 thin films with Cr concentrations between 0% and 20% on (0001)-Al2O3 by oxygen-assisted molecular beam epitaxy. For the highly doped samples (>3%), a regular and monotonous increase of the resistance with decreasing temperature is measured. Strikingly, in the low doping samples (between 1% and 3%), a collapse of the insulating state is observed with a reduction of the low temperature resistivity by up to 5 orders of magnitude. A vacuum annealing at high temperature of the films recovers the low temperature insulating state for doping levels below 3% and increases the room temperature resistivity towards the values of Cr-doped V2O3 single crystals. It is well-know that oxygen excess stabilizes a metallic state in V2O3 single crystals. Hence, we propose that Cr doping promotes oxygen excess in our films during deposition, leading to the collapse of the low temperature insulating state at low Cr concentrations. These results suggest that slightly Cr-doped V2O3 films can be interesting candidates for field effect devices. (C) 2015 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 14
DOI: 10.1063/1.4931372
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