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Capacitive electrical asymmetry effect in an inductively coupled plasma reactor”. Zhang Q-Z, Bogaerts A, Plasma Sources Science &, Technology 27, 105019 (2018). http://doi.org/10.1088/1361-6595/aad796
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Plasma streamer propagation in structured catalysts”. Zhang Q-Z, Bogaerts A, Plasma Sources Science &, Technology 27, 105013 (2018). http://doi.org/10.1088/1361-6595/aae430
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Heating mechanism in direct current superposed single-frequency and dual-frequency capacitively coupled plasmas”. Zhang Q-Z, Liu Y-X, Jiang W, Bogaerts A, Wang Y-N, Plasma sources science and technology 22, 025014 (2013). http://doi.org/10.1088/0963-0252/22/2/025014
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Importance of surface charging during plasma streamer propagation in catalyst pores”. Zhang Q-Z, Wang W-Z, Bogaerts A, Plasma sources science and technology 27, 065009 (2018). http://doi.org/10.1088/1361-6595/aaca6d
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H2S Decomposition into H2 and S2 by Plasma Technology: Comparison of Gliding Arc and Microwave Plasma”. Zhang Q-Z, Wang WZ, Thille C, Bogaerts A, Plasma Chemistry And Plasma Processing 40, 1163 (2020). http://doi.org/10.1007/s11090-020-10100-3
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Positive and negative streamer propagation in volume dielectric barrier discharges with planar and porous electrodes”. Zhang Q‐Z, Zhang L, Yang D‐Z, Schulze J, Wang Y‐N, Bogaerts A, Plasma Processes And Polymers 18, 2000234 (2021). http://doi.org/10.1002/ppap.202000234
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Enhancement of plasma generation in catalyst pores with different shapes”. Zhang Y-R, Neyts EC, Bogaerts A, Plasma sources science and technology 27, 055008 (2018). http://doi.org/10.1088/1361-6595/aac0e4
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Comparison of electrostatic and electromagnetic simulations for very high frequency plasmas”. Zhang Y-R, Xu X, Zhao S-X, Bogaerts A, Wang Y-N, Physics of plasmas 17, 113512 (2010). http://doi.org/10.1063/1.3519515
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Formation of microdischarges inside a mesoporous catalyst in dielectric barrier discharge plasmas”. Zhang Y, Wang H-yu, Zhang Y-ru, Bogaerts A, Plasma sources science and technology 26, 054002 (2017). http://doi.org/10.1088/1361-6595/aa66be
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The effect of F2 attachment by low-energy electrons on the electron behaviour in an Ar/CF4 inductively coupled plasma”. Zhao S-X, Gao F, Wang Y-N, Bogaerts A, Plasma sources science and technology 21, 025008 (2012). http://doi.org/10.1088/0963-0252/21/2/025008
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Gas ratio effects on the Si etch rate and profile uniformity in an inductively coupled Ar/CF4 plasma”. Zhao S-X, Gao F, Wang Y-N, Bogaerts A, Plasma sources science and technology 22, 015017 (2013). http://doi.org/10.1088/0963-0252/22/1/015017
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