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Author (up) Yang, Z.; Tirry, W.; Lamoen, D.; Kulkova, S.; Schryvers, D.
Title Electron energy-loss spectroscopy and first-principles calculation studies on a Ni-Ti shape memory alloy Type A1 Journal article
Year 2008 Publication Acta materialia Abbreviated Journal Acta Mater
Volume 56 Issue 3 Pages 395-404
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
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Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos 000253020900011 Publication Date 2007-12-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1359-6454; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 5.301 Times cited 20 Open Access
Notes Goa; Ec Rtn; Fwo Approved Most recent IF: 5.301; 2008 IF: 3.729
Call Number UA @ lucian @ c:irua:67462 Serial 931
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Author (up) Zeng, Y.-J.; Schouteden, K.; Amini, M.N.; Ruan, S.-C.; Lu, Y.-F.; Ye, Z.-Z.; Partoens, B.; Lamoen, D.; Van Haesendonck, C.
Title Electronic band structures and native point defects of ultrafine ZnO nanocrystals Type A1 Journal article
Year 2015 Publication ACS applied materials and interfaces Abbreviated Journal Acs Appl Mater Inter
Volume 7 Issue 7 Pages 10617-10622
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Abstract Ultrafine ZnO nanocrystals with a thickness down to 0.25 nm are grown by a metalorganic chemical vapor deposition method. Electronic band structures and native point defects of ZnO nanocrystals are studied by a combination of scanning tunneling microscopy/spectroscopy and first-principles density functional theory calculations. Below a critical thickness of nm ZnO adopts a graphitic-like structure and exhibits a wide band gap similar to its wurtzite counterpart. The hexagonal wurtzite structure, with a well-developed band gap evident from scanning tunneling spectroscopy, is established for a thickness starting from similar to 1.4 nm. With further increase of the thickness to 2 nm, V-O-V-Zn defect pairs are easily produced in ZnO nanocrystals due to the self-compensation effect in highly doped semiconductors.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000355055000063 Publication Date 2015-04-29
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1944-8244;1944-8252; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 7.504 Times cited 15 Open Access
Notes Hercules; EWI Approved Most recent IF: 7.504; 2015 IF: 6.723
Call Number c:irua:126408 Serial 999
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Author (up) Zhang, M.-L.; March, N.H.; Peeters, A.; van Alsenoy, C.; Howard, I.; Lamoen, D.; Leys, F.
Title Loss rate of a plasticizer in a nylon matrix calculated using macroscopic reaction-diffusion kinetics Type A1 Journal article
Year 2003 Publication Journal Of Applied Physics Abbreviated Journal J Appl Phys
Volume 93 Issue Pages 1525-1532
Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
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Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000180630200031 Publication Date 2003-02-10
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record;
Impact Factor 2.068 Times cited Open Access
Notes Approved Most recent IF: 2.068; 2003 IF: 2.171
Call Number UA @ lucian @ c:irua:41405 Serial 1844
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