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Author  |
Sels, D.; Sorée, B.; Groeseneken, G. | ||||
| Title | 2-D rotational invariant multi sub band Schrödinger-Poisson solver to model nanowire transistors | Type | A1 Journal article | ||
| Year | 2010 | Publication | Abbreviated Journal | ||
| Volume | Issue | Pages | 85-88 | ||
| Keywords | A1 Journal article; Electron Microscopy for Materials Science (EMAT); | ||||
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| Publisher | Pisa University Press | Place of Publication | Pisa | Editor | |
| Language | Wos | Publication Date | 0000-00-00 | ||
| Series Editor | Series Title | Abbreviated Series Title | 14th International Workshop on Computational Electronics | ||
| Series Volume | Series Issue | Edition | |||
| ISSN | 978-1-4244-9381-4 | ISBN | Additional Links | UA library record | |
| Impact Factor | Times cited | Open Access | |||
| Notes | Approved | Most recent IF: NA | |||
| Call Number | UA @ lucian @ c:irua:91699 | Serial | 6 | ||
| Permanent link to this record | |||||
| Author |
Sels, D.; Sorée, B.; Groeseneken, G. | ||||
| Title | Quantum ballistic transport in the junctionless nanowire pinch-off field effect transistor | Type | A1 Journal article | ||
| Year | 2011 | Publication | Journal of computational electronics | Abbreviated Journal | J Comput Electron |
| Volume | 10 | Issue | 1 | Pages | 216-221 |
| Keywords | A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT) | ||||
| Abstract | In this work we investigate quantum ballistic transport in ultrasmall junctionless and inversion mode semiconducting nanowire transistors within the framework of the self-consistent Schrödinger-Poisson problem. The quantum transmitting boundary method is used to generate open boundary conditions between the active region and the electron reservoirs. We adopt a subband decomposition approach to make the problem numerically tractable and make a comparison of four different numerical approaches to solve the self-consistent Schrödinger-Poisson problem. Finally we discuss the IV-characteristics for small (r≤5 nm) GaAs nanowire transistors. The novel junctionless pinch-off FET or junctionless nanowire transistor is extensively compared with the gate-all-around (GAA) nanowire MOSFET. | ||||
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| Publisher | Place of Publication | S.l. | Editor | ||
| Language | Wos | 000300735800021 | Publication Date | 2011-02-22 | |
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1569-8025;1572-8137; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor | 1.526 | Times cited | 12 | Open Access | |
| Notes | ; ; | Approved | Most recent IF: 1.526; 2011 IF: 1.211 | ||
| Call Number | UA @ lucian @ c:irua:89501 | Serial | 2772 | ||
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