“Local structure of perovskite-based “Pb2Fe2O5””. Hadermann J, Abakumov AM, Nikolaev IV, Antipov EV, Van Tendeloo G, Solid state sciences 10, 382 (2008). http://doi.org/10.1016/j.solidstatesciences.2007.12.008
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 29
DOI: 10.1016/j.solidstatesciences.2007.12.008
|
“Compositionally induced phase transition in the Ca2MnGa1-xAlxO5 solid solutions: ordering of tetrahedral chains in brownmillerite structure”. Abakumov AM, Kalyuzhnaya AS, Rozova MG, Antipov EV, Hadermann J, Van Tendeloo G, Solid state sciences 7, 801 (2005). http://doi.org/10.1016/j.solidstatesciences.2005.01.020
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 38
DOI: 10.1016/j.solidstatesciences.2005.01.020
|
“Layered ordering of vacancies of lead iron phosphate Pb3Fe2(PO4)4”. Malakho AP, Morozov VA, Pokholok KV, Lazoryak BI, Van Tendeloo G, Solid state sciences 7, 397 (2005). http://doi.org/10.1016/j.solidstatesciences.2005.01.007
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 7
DOI: 10.1016/j.solidstatesciences.2005.01.007
|
“New molybdenum oxides Ag4M2Zr(MoO4)6 (M=Mg, Mn, Co, Zn) with a channel-like structure”. Khobrakova ET, Morozov VA, Khasanov SS, Tsyrenova GD, Khaikina EG, Lebedev OI, Van Tendeloo G, Lazoryak BI, Solid state sciences 7, 1397 (2005). http://doi.org/10.1016/j.solidstatesciences.2005.08.010
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 9
DOI: 10.1016/j.solidstatesciences.2005.08.010
|
“Zeotile-2: a microporous analogue of MCM-48”. Kremer SPB, Kirschhock CEA, Aerts A, Aerts CA, Houthoofd KJ, Grobet PJ, Jacobs PA, Lebedev OI, Van Tendeloo G, Martens JA, Solid state sciences 7, 861 (2005). http://doi.org/10.1016/j.solidstatesciences.2005.01.021
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 10
DOI: 10.1016/j.solidstatesciences.2005.01.021
|
“Ferroelectric phase transition in the whitlockite-type Ca9Fe(PO4)7, crystal structure of the paraelectric phase at 923 K”. Lazoryak BI, Morozov VA, Belik AA, Stefanovich SY, Grebenev VV, Leonidov IA, Mitberg EB, Davydov SA, Lebedev OI, Van Tendeloo G, Solid state sciences 6, 185 (2004). http://doi.org/10.1016/j.solidstatesciences.2003.12.007
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 41
DOI: 10.1016/j.solidstatesciences.2003.12.007
|
“Structure and microstructure of nanoscale mesoporous silica spheres”. Lebedev OI, Van Tendeloo G, Collart O, Cool P, Vansant EF, Solid state sciences 6, 489 (2004). http://doi.org/10.1016/j.solidstatesciences.2004.01.013
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA)
Impact Factor: 1.811
Times cited: 42
DOI: 10.1016/j.solidstatesciences.2004.01.013
|
“Order and twining in Sb2W0.75Mo0.25O6”. Enjalbert R, Galy J, Castro A, Lidin S, Withers R, Van Tendeloo G, Solid state sciences 5, 721 (2003). http://doi.org/10.1016/S1293-2558(03)00093-1
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 3
DOI: 10.1016/S1293-2558(03)00093-1
|
“Synthesis and structural investigations on the new Sr1.32Mn0.83Cu0.17O3 compound”. Abakumov AM, Mironov AV, Govorov VA, Lobanov MV, Rozova MG, Antipov EV, Lebedev OI, Van Tendeloo G, Solid state sciences 5, 1117 (2003). http://doi.org/10.1016/S1293-2558(03)00141-9
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 8
DOI: 10.1016/S1293-2558(03)00141-9
|
“Synthesis and structure of Sr2MnGaO5+\delta brownmillerites with variable oxygen content”. Abakumov AM, Rozova MG, Alekseeva AM, Kovba ML, Antipov EV, Lebedev OI, Van Tendeloo G, Solid state sciences 5, 871 (2003). http://doi.org/10.1016/S1293-2558(03)00112-2
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 12
DOI: 10.1016/S1293-2558(03)00112-2
|
“Synthesis and investigation of novel Mn-based oxyfluoride Sr2Mn2O5-xF1+x”. Lobanov MV, Abakumov AM, Sidorova AV, Rozova MG, D'yachenko OG, Antipov EV, Hadermann J, Van Tendeloo G, Solid state sciences 4, 19 (2002). http://doi.org/10.1016/S1293-2558(01)01209-2
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 21
DOI: 10.1016/S1293-2558(01)01209-2
|
“The layered manganate Sr4-xBaxMn3O10: synthesis, structural and magnetic properties”. Floros N, Hervieu M, Van Tendeloo G, Michel C, Maignan A, Raveau B, Solid state sciences 2, 1 (2000). http://doi.org/10.1016/S1293-2558(00)00115-1
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 29
DOI: 10.1016/S1293-2558(00)00115-1
|
“Synthesis and structural characterization of a novel Sillén &ndash, Aurivillius bismuth oxyhalide, PbBi3VO7.5Cl, and its derivatives”. Charkin DO, Plokhikh IV, Kazakov SM, Kalmykov SN, Akinfiev VS, Gorbachev AV, Batuk M, Abakumov AM, Teterin YA, Maslakov KI, Teterin AY, Ivanov KE, Solid state sciences 75, 27 (2018). http://doi.org/10.1016/j.solidstatesciences.2017.11.006
Abstract: A new Sillen – Aurivillius family of layered bismuth oxyhalides has been designed and successfully constructed on the basis of PbBiO2X(X = halogen) synthetic perites and g-form of Bi2VO5.5 solid elec- trolyte. This demonstrates, for the first time, the ability of the latter to serve as a building block in construction of mixed-layer structures. The parent compound PbBi3VO7.5-dCl (d = 0.05) has been investigated by powder XRD, TEM, XPS methods and magnetic susceptibility measurements. An unexpected but important condition for the formation of the mixed-layer structure is partial (ca. 5%) reduction of VV into VIV which probably suppresses competitive formation of apatite-like Pb – Bi vanadates. This reduction also stabilizes the g polymorphic form of Bi2VO5.5 not only in the intergrowth structure, but in Bi2V1-xMxO5.5-y (M – Nb, Sb) solid solutions.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 1
DOI: 10.1016/j.solidstatesciences.2017.11.006
|
“Phase formation in intermixed NiGe thin films : influence of Ge content and low-temperature nucleation of hexagonal nickel germanides”. De Schutter B, Devulder W, Schrauwen A, van Stiphout K, Perkisas T, Bals S, Vantomme A, Detavernier C, Microelectronic engineering 120, 168 (2014). http://doi.org/10.1016/j.mee.2013.09.004
Abstract: In this study, we focus on phase formation in intermixed NiGe thin films as they represent a simplified model of the small intermixed interface layer that is believed to form upon deposition of Ni on Ge and where initial phase formation happens. A combinatorial sputter deposition technique was used to co-deposit a range of intermixed NiGe thin films with Ge concentrations varying between 0 and 50 at.%Ge in a single deposition on both Ge (100) and inert SiO2 substrates. In situ X-ray diffraction and transmission electron microscopy where used to study phase formation. In almost the entire composition range under investigation, crystalline phases where found to be present in the as-deposited films. Between 36 and 48 at.%Ge, high-temperature hexagonal nickel germanides were found to occur metastabily below 300 °C, both on SiO2 and Ge (100) substrates. For Ge concentrations in the range between 36 and 42 at.%, this hexagonal germanide phase was even found to be present at room temperature in the as-deposited films. The results obtained in this work could provide more insight in the phase sequence of a pure Ni film on Ge.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.806
Times cited: 9
DOI: 10.1016/j.mee.2013.09.004
|
“Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers”. De Gryse O, Clauws P, Rossou L, van Landuyt J, Vanhellemont J, Microelectronic engineering 45, 277 (1999). http://doi.org/10.1016/S0167-9317(99)00180-X
Abstract: A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.806
DOI: 10.1016/S0167-9317(99)00180-X
|
“Morphological TEM studies and magnetoresistance analysis of sputtered Al-substituted ZnO films : the role of oxygen”. Van Gompel M, Atalay AY, Gaulke A, Van Bael MK, D'Haen J, Turner S, Van Tendeloo G, Vanacken J, Moshchalkov VV, Wagner P, Physica status solidi : A : applications and materials science 212, 1191 (2015). http://doi.org/10.1002/pssa.201431888
Abstract: In this article, we report on the synthesis of thin, epitaxial films of the transparent conductive oxide Al:ZnO on (0001)-oriented synthetic sapphire substrates by DC sputtering from targets with a nominal 1 at.% Al substitution. The deposition was carried out at an unusually low substrate temperature of only 250 °C in argonoxygen mixtures as well as in pure argon. The impact of the processgas composition on the morphology was analysed by transmission electron microscopy, revealing epitaxial growth in all the cases with a minor impact of the process parameters on the resulting grain sizes. The transport properties resistivity, Hall effect and magnetoresistance were studied in the range from 10 to 300 K in DC and pulsed magnetic fields up to 45 T. While the carrier density and mobility are widely temperature independent, we identified a low fieldlow temperature regime in which the magnetoresistance shows an anomalous, negative behaviour. At higher fields and temperatures, the magnetoresistance exhibits a more conventional, positive curvature with increasing field strength. As a possible explanation, we propose carrier scattering at localised magnetic trace impurities and magnetic correlations.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
DOI: 10.1002/pssa.201431888
|
“Aberration-corrected microscopy and spectroscopy analysis of pristine, nitrogen containing detonation nanodiamond”. Turner S, Shenderova O, da Pieve F, Lu Y-G, Yücelen E, Verbeeck J, Lamoen D, Van Tendeloo G, Physica status solidi : A : applications and materials science 210, 1976 (2013). http://doi.org/10.1002/pssa.201300315
Abstract: Aberration-corrected transmission electron microscopy, electron energy-loss spectroscopy, and density functional theory (DFT) calculations are used to solve several key questions about the surface structure, the particle morphology, and the distribution and nature of nitrogen impurities in detonation nanodiamond (DND) cleaned by a recently developed ozone treatment. All microscopy and spectroscopy measurements are performed at a lowered acceleration voltage (80/120kV), allowing prolonged and detailed experiments to be carried out while minimizing the risk of knock-on damage or surface graphitization of the nanodiamond. High-resolution TEM (HRTEM) demonstrates the stability of even the smallest nanodiamonds under electron illumination at low voltage and is used to image the surface structure of pristine DND. High resolution electron energy-loss spectroscopy (EELS) measurements on the fine structure of the carbon K-edge of nanodiamond demonstrate that the typical * pre-peak in fact consists of three sub-peaks that arise from the presence of, amongst others, minimal fullerene-like reconstructions at the nanoparticle surfaces and deviations from perfect sp(3) coordination at defects in the nanodiamonds. Spatially resolved EELS experiments evidence the presence of nitrogen within the core of DND particles. The nitrogen is present throughout the whole diamond core, and can be enriched at defect regions. By comparing the fine structure of the experimental nitrogen K-edge with calculated energy-loss near-edge structure (ELNES) spectra from DFT, the embedded nitrogen is most likely related to small amounts of single substitutional and/or A-center nitrogen, combined with larger nitrogen clusters.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
Times cited: 37
DOI: 10.1002/pssa.201300315
|
“Grain size tuning of nanocrystalline chemical vapor deposited diamond by continuous electrical bias growth : experimental and theoretical study”. Mortet V, Zhang L, Eckert M, D'Haen J, Soltani A, Moreau M, Troadec D, Neyts E, De Jaeger JC, Verbeeck J, Bogaerts A, Van Tendeloo G, Haenen K, Wagner P, Physica status solidi : A : applications and materials science 209, 1675 (2012). http://doi.org/10.1002/pssa.201200581
Abstract: In this work, a detailed structural and spectroscopic study of nanocrystalline diamond (NCD) thin films grown by a continuous bias assisted CVD growth technique is reported. This technique allows the tuning of grain size and phase purity in the deposited material. The crystalline properties of the films are characterized by SEM, TEM, EELS, and Raman spectroscopy. A clear improvement of the crystalline structure of the nanograined diamond film is observed for low negative bias voltages, while high bias voltages lead to thin films consisting of diamond grains of only ∼10 nm nanometer in size, showing remarkable similarities with so-called ultrananocrystalline diamond. These layers arecharacterized by an increasing amount of sp2-bonded carbon content of the matrix in which the diamond grains are embedded. Classical molecular dynamics simulations support the observed experimental data, giving insight in the underlying mechanism for the observed increase in deposition rate with bias voltage. Furthermore, a high atomic concentration of hydrogen has been determined in these films. Finally, Raman scattering analyses confirm that the Raman line observed at ∼1150 cm−1 cannot be attributed to trans-poly-acetylene, which continues to be reported in literature, reassigning it to a deformation mode of CHx bonds in NCD.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.775
Times cited: 31
DOI: 10.1002/pssa.201200581
|
“Depth strain profile with sub-nm resolution in a thin silicon film using medium energy ion scattering”. Jalabert D, Pelloux-Gervais D, Béché, A, Hartmann JM, Gergaud P, Rouvière JL, Canut B, Physica Status Solidi A-Applications And Materials Science 209, 265 (2012). http://doi.org/10.1002/PSSA.201127502
Abstract: The depth strain profile in silicon from the Si (001) substrate to the surface of a 2 nm thick Si/12 nm thick SiGe/bulk Si heterostructure has been determined by medium energy ion scattering (MEIS). It shows with sub-nanometer resolution and high strain sensitivity that the thin Si cap presents residual compressive strain caused by Ge diffusion coming from the fully strained SiGe layer underneath. The strain state of the SiGe buffer have been checked by X-ray diffraction (XRD) and nano-beam electron diffraction (NBED) measurements.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
Times cited: 3
DOI: 10.1002/PSSA.201127502
|
“Dislocation distributions in brown diamond”. Willems B, Martineau PM, Fisher D, van Royen J, Van Tendeloo G, Physica status solidi: A: applied research 203, 3076 (2006). http://doi.org/10.1002/pssa.200671129
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
Times cited: 21
DOI: 10.1002/pssa.200671129
|
“First-principles characterization of amorphous carbon nitride systems: structural and electronic properties”. Titantah JT, Lamoen D, Physica status solidi: A: applied research 203, 3191 (2006). http://doi.org/10.1002/pssa.200671107
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
Times cited: 3
DOI: 10.1002/pssa.200671107
|
“The effect of molecular structure of organic compound on the direct high-pressure synthesis of boron-doped nanodiamond: Effect of organic compound on synthesis of boron-doped nanodiamond”. Ekimov EA, Kudryavtsev OS, Turner S, Korneychuk S, Sirotinkin VP, Dolenko TA, Vervald AM, Vlasov II, Physica status solidi : A : applications and materials science 213, 2582 (2016). http://doi.org/10.1002/pssa.201600181
Abstract: Evolution of crystalline phases with temperature has been studied in materials produced by high-pressure high-temperature treatment of 9-borabicyclo[3.3.1]nonane dimer (9BBN), triphenylborane and trimesitylborane. The boron-doped diamond nanoparticles with a size below 10 nm were obtained at 8–9 GPa and temperatures 970–1250 °C from 9BBN only. Bridged structure and the presence of boron atom in the carbon cycle of 9BBN were revealed to be a key point for the direct synthesis of doped diamond nanocrystals. The diffusional transformation of the disordered carbon phase is suggested to be the main mechanism of the nanodiamond formation from 9BBN in the temperature range of 970–1400 °C. Aqueous suspensions of primary boron-doped diamond nanocrystals were prepared upon removal of non-diamond phases that opens wide opportunities for application of this new nanomaterial in electronics and biotechnologies.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
Times cited: 8
DOI: 10.1002/pssa.201600181
|
Sankaran KJ, Hoang DQ, Srinivasu K, Korneychuk S, Turner S, Drijkoningen S, Pobedinskas P, Verbeeck J, Leou KC, Lin IN, Haenen K, Physica status solidi : A : applications and materials science 213, 2654 (2016). http://doi.org/10.1002/PSSA.201600233
Abstract: Utilization of Au and nanocrystalline diamond ( NCD) as interlayers noticeably modifies the microstructure and field electron emission ( FEE) properties of hexagonal boron nitride nanowalls ( hBNNWs) grown on Si substrates. The FEE properties of hBNNWs on Au could be turned on at a low turn-on field of 14.3V mu m(-1), attaining FEE current density of 2.58mAcm(-2) and life-time stability of 105 min. Transmission electron microscopy reveals that the Au-interlayer nucleates the hBN directly, preventing the formation of amorphous boron nitride ( aBN) in the interface, resulting in enhanced FEE properties. But Au forms as droplets on the Si substrate forming again aBN at the interface. Conversely, hBNNWs on NCD shows superior in life-time stability of 287 min although it possesses inferior FEE properties in terms of larger turn-on field and lower FEE current density as compared to that of hBNNWs-Au. The uniform and continuous NCD film on Si also circumvents the formation of aBN phases and allows hBN to grow directly on NCD. Incorporation of carbon in hBNNWs from the NCD-interlayer improves the conductivity of hBNNWs, which assists in transporting the electrons efficiently from NCD to hBNNWs that results in better field emission of electrons with high life-time stability. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
Times cited: 5
DOI: 10.1002/PSSA.201600233
|
“Surface passivation of CIGS solar cells using gallium oxide”. Garud S, Gampa N, Allen TG, Kotipalli R, Flandre D, Batuk M, Hadermann J, Meuris M, Poortmans J, Smets A, Vermang B, Physica status solidi : A : applications and materials science 215, 1700826 (2018). http://doi.org/10.1002/PSSA.201700826
Abstract: This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se-2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5nm passivation layer show an substantial absolute improvement of 56mV in open-circuit voltage (V-OC), 1mAcm(-2) in short-circuit current density (J(SC)), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
Times cited: 8
DOI: 10.1002/PSSA.201700826
|
“Measurement of the Indirect Band Gap of Diamond with EELS in STEM”. Korneychuk S, Guzzinati G, Verbeeck J, Physica status solidi : A : applications and materials science 215, 1800318 (2018). http://doi.org/10.1002/pssa.201800318
Abstract: In this work, a simple method to measure the indirect band gap of diamond with electron energy loss spectroscopy (EELS) in transmission electron microscopy (TEM) is showed. The authors discuss the momentum space resolution achievable with EELS and the possibility of deliberately selecting specific transitions of interest. Based on a simple 2 parabolic band model of the band structure, the authors extend our predictions from the direct band gap case discussed in previous work, to the case of an indirect band gap. Finally, the authors point out the emerging possibility to partly reconstruct the band structure with EELS exploiting our simplified model of inelastic scattering and support it with experiments on diamond.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.775
Times cited: 6
DOI: 10.1002/pssa.201800318
|
“Orientational disorder in some molecular solids in relation to the boson peak in glasses”. Lamoen D, March NH, Physics letters : A 373, 799 (2009). http://doi.org/10.1016/j.physleta.2009.01.003
Abstract: Orientational disorder in some molecular solids is discussed in relation to the emphasis placed on transverse vibrational modes in glasses as the origin of the observed boson peak in two very recent contributions in Nature Materials. In particular, facts are here presented for (i) CH4, (ii) C60 and (iii) ethanol in their solid phases for (a) specific heat and (b) neutron scattering. The results for ethanol in particular do not fit in with the interpretation of the boson peak in terms of transverse acoustic phonons in disordered systems. Glasses will therefore have to be separated into at least two classes where the physical interpretation of the boson peak is concerned.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.772
Times cited: 3
DOI: 10.1016/j.physleta.2009.01.003
|
“C-H\cdots X (X = S, P) hydrogen bonding : the complexes of halothane with dimethyl sulfide and trimethylphosphine”. Michielsen B, Verlackt C, van der Veken BJ, Herrebout WA, Journal Of Molecular Structure 1023, 90 (2012). http://doi.org/10.1016/j.molstruc.2012.02.063
Abstract: The formation of CH⋯S and CH⋯P hydrogen bonded complexes of halothane, CHBrClCF3, with dimethyl sulfide(-d6) and trimethylphosphine(-d9) have been studied in solutions of liquid krypton using infrared and Raman spectroscopy. In the 1:1 complexes, the halothane CH stretching mode is found to be red-shifted by 43 cm−1 in the dimethyl sulfide complex, and by 63 cm−1 in the trimethylphosphine complex. The complexation enthalpies were derived and amount to −10.7(2) and −11.2(2) kJ mol−1 for the respective complexes. The experiments were supported by ab initio calculations and Monte Carlo simulations. The obtained data for the CH⋯S and CH⋯P hydrogen bonds is compared to that of corresponding CH⋯O and CH⋯N hydrogen bonds.
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 1.753
Times cited: 21
DOI: 10.1016/j.molstruc.2012.02.063
|
“Crystal growth of CsCl-type Yb0.24Sn0.76Ru”. Klimczuk T, Wang CH, Xu Q, Lawrence J, Durakiewicz T, Ronning F, Llobet A, Bauer ED, Griveau J-C, Sadowski W, Zandbergen HW, Thompson JD, Cava RJ, Journal of crystal growth 318, 1005 (2011). http://doi.org/10.1016/j.jcrysgro.2010.10.045
Abstract: The YbRuSn ternary system was investigated and a new material, Yb0.24Sn0.76Ru, with a simple cubic crystal structure, was discovered. Yb0.24Sn0.76Ru has a smaller lattice parameter a=3.217(4) Å, than its isostructural YbRu analogue (a=3.360 Å). Both X-ray diffraction and electron microscopy techniques were used to refine the crystal structure of Yb0.24Sn0.76Ru. It was found that a new compound forms in the CsCl structure, with Ru on the 1a site and a (Yb, Sn) mixture on site 1b. The XRD Rietveld analysis provides the occupation of Yb equal to 0.24, in agreement with the single crystal nano-electron diffraction refinement, which gives the occupation 0.21.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 1
DOI: 10.1016/j.jcrysgro.2010.10.045
|
“Structural and optical properties of CdSe quantum dots induced by amorphous Se”. Aichele T, Robin I-C, Bougerol C, André, R, Tatarenko S, Van Tendeloo G, Journal of crystal growth 301, 281 (2007). http://doi.org/10.1016/j.jcrysgro.2006.11.077
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 5
DOI: 10.1016/j.jcrysgro.2006.11.077
|
“Growth and characterization of a-axis textured ZnO thin films”. Nistor LC, Ghica C, Matei D, Dinescu G, Dinescu M, Van Tendeloo G, Journal of crystal growth 277, 26 (2005). http://doi.org/10.1016/j.jcrysgro.2004.12.162
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 44
DOI: 10.1016/j.jcrysgro.2004.12.162
|