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Author Parrilla, M.; Vanhooydonck, A.; Watts, R.; De Wael, K. pdf  url
doi  openurl
  Title Wearable wristband-based electrochemical sensor for the detection of phenylalanine in biofluids Type A1 Journal article
  Year 2022 Publication Biosensors and bioelectronics Abbreviated Journal  
  Volume 197 Issue Pages  
  Keywords A1 Journal article; Engineering sciences. Technology; Product development; Antwerp Electrochemical and Analytical Sciences Lab (A-Sense Lab)  
  Abstract Wearable electrochemical sensors are driven by the user-friendly capability of on-site detection of key biomarkers for health management. Despite the advances in biomolecule monitoring such as glucose, still, several unmet clinical challenges need to be addressed. For example, patients suffering from phenylketonuria (PKU) should be able to monitor their phenylalanine (PHE) level in a rapid, decentralized, and affordable manner to avoid high levels of PHE in the body which can lead to a profound and irreversible mental disability. Herein, we report a wearable wristband electrochemical sensor for the monitoring of PHE tackling the necessity of controlling PHE levels in PHE hydroxylase deficiency patients. The proposed electrochemical sensor is based on a screen-printed electrode (SPE) modified with a membrane consisting of Nafion, to avoid interferences in biofluids. The membrane also consists of sodium 1,2-naphthoquinone-4-sulphonate for the in situ derivatization of PHE into an electroactive product, allowing its electrochemical oxidation at the surface of the SPE in alkaline conditions. Importantly, the electrochemical sensor is integrated into a wristband configuration to enhance user interaction and engage the patient with PHE self-monitoring. Besides, a paper-based sampling strategy is designed to alkalinize the real sample without the need for sample pretreatment, and thus simplify the analytical process. Finally, the wearable device is tested for the determination of PHE in saliva and blood serum. The proposed wristband-based sensor is expected to impact the PKU self-monitoring, facilitating the daily lives of PKU patients toward optimal therapy and disease management.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000719366400003 Publication Date 2021-11-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0956-5663 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited Open Access OpenAccess  
  Notes Approved (down) no  
  Call Number UA @ admin @ c:irua:183086 Serial 8957  
Permanent link to this record
 

 
Author Sels, D.; Sorée, B.; Groeseneken, G. openurl 
  Title 2-D rotational invariant multi sub band Schrödinger-Poisson solver to model nanowire transistors Type A1 Journal article
  Year 2010 Publication Abbreviated Journal  
  Volume Issue Pages 85-88  
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Pisa University Press Place of Publication Pisa Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title 14th International Workshop on Computational Electronics  
  Series Volume Series Issue Edition  
  ISSN 978-1-4244-9381-4 ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:91699 Serial 6  
Permanent link to this record
 

 
Author Bogaerts, R.; de Keyser, A.; van Bockstal, L.; van der Burgt, M.; van Esch, A.; Provoost, R.; Silverans, R.; Herlach, F.; Swinnen, B.; van de Stadt, A.F.W.; Koenraad, P.M.; Wolter, J.H.; Karavolas, V.C.; Peeters, F.M.; van de Graaf, W.; Borghs, G. openurl 
  Title 2D semiconductors at the Leuven pulsed field facility Type A1 Journal article
  Year 1997 Publication Physicalia magazine Abbreviated Journal  
  Volume 19 Issue Pages 229-239  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Gent Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0770-0520 ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:19257 Serial 7  
Permanent link to this record
 

 
Author Hadermann, J.; Pérez, O.; Créon, N.; Michel, C.; Hervieu, M. doi  openurl
  Title The (3 + 2)D structure of oxygen deficient LaSrCuO3.52 Type A1 Journal article
  Year 2007 Publication Journal of materials chemistry Abbreviated Journal J Mater Chem  
  Volume 17 Issue 22 Pages 2344-2350  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Cambridge Editor  
  Language Wos 000247349400020 Publication Date 2007-04-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0959-9428;1364-5501; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 7 Open Access  
  Notes Supergmr:Hprn-Ct-2000-0021 Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:64749 c:irua:64749 Serial 13  
Permanent link to this record
 

 
Author Cao, S.; Tirry, W.; van den Broek, W.; Schryvers, D. pdf  doi
openurl 
  Title 3D reconstruction of Ni4Ti3 precipitates in a Ni51Ti49 alloy in a FIB/SEM dual-beam system Type A1 Journal article
  Year 2008 Publication Materials science forum Abbreviated Journal  
  Volume 583 Issue Pages 277-284  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract Ni4Ti3 precipitates play an important role in the shape memory and superelastic behaviour of thermo-mechanically treated Ni-Ti material. The 3D morphology and distribution of such precipitates with lenticular shape and rhombohedral atomic structure in the austenitic B2 matrix of a binary Ni-rich Ni-Ti alloy has been elucidated via a slice view procedure in a Dual-Beam FIB/SEM system. With the sequence of cross-section SE images obtained from the SEM, a 3D reconstruction has been achieved after proper alignment and image processing, from which both qualitative and quantitative analysis can be performed. Careful imaging is needed to ensure that all variants of the precipitates are observed with equal probability, regardless sample orientation. Moreover, due to the weak contrast of the precipitates, proper imaging conditions need to be selected to allow for semi-automated image treatment. Finally, a volume ratio of 10.2% for the Ni4Ti3 precipitates could be calculated, summed over all variants, which yields a net composition of Ni50.36Ti49.64 for the matrix, leading to an increase of 113 degrees for the martensitic start temperature Ms. Also, the expected relative orientation of the different variants of the precipitates could be confirmed. In the near future, other quantitative measures on the distribution of the precipitates can be expected.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lausanne Editor  
  Language Wos Publication Date 2009-03-11  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1662-9752; ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Multimat; Fwo Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:77454 Serial 16  
Permanent link to this record
 

 
Author Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A. url  doi
openurl 
  Title Ab initio based atomic scattering amplitudes and {002} electron structure factors of InxGa1-xAs/GaAs quantum wells Type A1 Journal article
  Year 2010 Publication Journal of physics : conference series Abbreviated Journal  
  Volume 209 Issue 1 Pages 012040,1-012040,6  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The atomic scattering amplitudes of the various atoms of the systems Ga1−xInxAs, GaAs1−xNx and InAs1−xNx are calculated using the density functional theory (DFT) approach. The scattering amplitudes of N, Ga, As and In in the model systems are compared with the frequently used Doyle and Turner values. Deviation from the latter values is found for small scattering vectors (s<0.3Å−1) and for these scattering vectors dependence on the orientation of the scattering vector and the chemical environment is reported. We suggest a parametrization of these modified scattering amplitudes (MASAs) for small scattering vectors (s<1.0Å−1). The MASAs are exploited within zero pressure classical Metropolis Monte Carlo (MC), finite temperature calculations to investigate the effect of quantum well size on the electron {002} structure factor (SF) of Ga1−xInxAs quantum wells.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Bristol Editor  
  Language Wos 000283739100040 Publication Date 2010-02-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6596; ISBN Additional Links UA library record; WoS full record  
  Impact Factor Times cited Open Access  
  Notes Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:85760 Serial 28  
Permanent link to this record
 

 
Author Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kruse, P.; Gerthsen, D. openurl 
  Title Ab initio computation of the mean inner Coulomb potential of technological important semiconductors Type A1 Journal article
  Year 2005 Publication Abbreviated Journal  
  Volume 1007 Issue Pages 233-236  
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0930-8989 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:72915 Serial 32  
Permanent link to this record
 

 
Author Van Tendeloo, G.; Hadermann, J.; Abakumov, A.M.; Antipov, E.V. pdf  doi
openurl 
  Title Advanced electron microscopy and its possibilities to solve complex structures: application to transition metal oxides Type A1 Journal article
  Year 2009 Publication Journal of materials chemistry Abbreviated Journal J Mater Chem  
  Volume 19 Issue 18 Pages 2660-2670  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Design and optimization of materials properties can only be performed through a thorough knowledge of the structure of the compound. In this feature article we illustrate the possibilities of advanced electron microscopy in materials science and solid state chemistry. The different techniques are briefly discussed and several examples are given where the structures of complex oxides, often with a modulated structure, have been solved using electron microscopy.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Cambridge Editor  
  Language Wos 000265740600002 Publication Date 2009-02-04  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0959-9428;1364-5501; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 9 Open Access  
  Notes Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:77065 Serial 68  
Permanent link to this record
 

 
Author Schryvers, D. pdf  url
doi  openurl
  Title Advanced electron microscopy characterisation of important precipitation and ordering phenomena in shape memory systems Type A1 Journal article
  Year 2015 Publication Shape memory and superelasticity Abbreviated Journal  
  Volume 1 Issue 1 Pages 78-84  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The present paper discusses some important aspects of precipitation and ordering in alloy systems that show a martensitic transformation and can or are used as shape memory or superelastic metallic systems. The precipitates are investigated by a variety of conventional and advanced electron microscopy techniques, including atomic resolution, 3D slice-and-view, energy loss spectroscopy etc. Depending on the system, such secondary phases can decrease the probability of a displacive transformation by changing the phase stability in the system, such as in the case of NiAl or NiTiPd, or can mechanically hinder the passage of the transformation interface, as in NiTiNb. On the other hand, properly controlling the nucleation and growth of some precipitates can strongly improve the properties of some types of materials, as is the case for the well-known Ni4Ti3 precipitates.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000432420400008 Publication Date 2015-04-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2199-384X;2199-3858; ISBN Additional Links UA library record; WoS full record  
  Impact Factor Times cited Open Access  
  Notes Fwo Approved (down) Most recent IF: NA  
  Call Number c:irua:127684 Serial 69  
Permanent link to this record
 

 
Author Schryvers, D.; Tirry, W.; Cao, S. pdf  doi
openurl 
  Title Advanced TEM and SEM methods applied to 3D nano- and microstructural investigations of Ni4Ti3 precipitates in Ni-Ti (SMA) Type A1 Journal article
  Year 2011 Publication Diffusion and defect data : solid state data : part B : solid state phenomena Abbreviated Journal  
  Volume 172/174 Issue Pages 229-235  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Two different kinds of experimental approaches yielding three-dimensional structural information on metastable semi-coherent precipitates are demonstrated. By combining high-resolution images from two independent viewing directions a full description of the strain field surrounding a nano-sized Ni4Ti3 precipitate in Ni-Ti can be obtained. The principal axes and strains correlate well with the transformation strain of the observed R-phase transformation close to the precipitate. Using a slice-and-view procedure in a FIB/SEM dual-beam instrument, a three-dimensional voxel dataset is produced from which morphological and distributional information on the same precipitates can be obtained yielding new insight into the particular transformation paths of these alloys, relevant for their functional behaviour.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Vaduz Editor  
  Language Wos 000303359700036 Publication Date 2011-07-04  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1662-9779; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited Open Access  
  Notes Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:90153 Serial 73  
Permanent link to this record
 

 
Author van Cleempoel, A.; Joutsensaari, J.; Kauppinen, E.; Gijbels, R.; Claeys, M. doi  openurl
  Title Aerosol synthesis and characterization of ultrafine fullerene particles Type A1 Journal article
  Year 1998 Publication Fullerene science and technology Abbreviated Journal Fullerene Sci Techn  
  Volume 6 Issue 4 Pages 599-627  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York Editor  
  Language Wos 000074859200001 Publication Date 2008-04-23  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1064-122X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 3 Open Access  
  Notes Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:24038 Serial 78  
Permanent link to this record
 

 
Author Shanenko, A.A.; Croitoru, M.D.; Mints, R.G.; Peeters, F.M. doi  openurl
  Title Andreev-type states induced by quantum confinement Type A1 Journal article
  Year 2008 Publication Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques Abbreviated Journal J Surf Investig-X-Ra  
  Volume 2 Issue 4 Pages 611-615  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)  
  Abstract The properties of a clean superconductor with nanoscale dimensions are governed by quantum confinement of the electrons. This results in a spatially inhomogeneous superconducting condensate and in the formation of new Andreev-type quasiparticle states. These states are mainly located beyond regions where the superconducting condensate is enhanced. A numerical self-consistent solution of the Bogoliubov-de Gennes equations for a cylindrical metallic nanowire shows that these new Andreev-type states decrease the ratio of the energy gap to the critical temperature.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000262864600021 Publication Date 2008-08-09  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1027-4510;1819-7094; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 1 Open Access  
  Notes Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:75991 Serial 113  
Permanent link to this record
 

 
Author Masir, M.R.; Vasilopoulos, P.; Matulis, A.; Peeters, F.M. pdf  doi
openurl 
  Title Angular confinement and direction-dependent transmission in graphene nanostructures with magnetic barriers Type A1 Journal article
  Year 2009 Publication AIP conference proceedings Abbreviated Journal  
  Volume 1199 Issue Pages 363-364  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We evaluate the transmission through magnetic barriers in graphene-based nanostructures. Several particular cases are considered: a magnetic step, single and double barriers, delta -function barriers as well as barrier structures with inhomogeneous magnetic field profiles but with average magnetic field equal to zero. The transmission exhibits a strong dependence on the direction of the incident wave vector. In general the resonant structure of the transmission is significantly more pronounced for (Dirac) electrons with linear spectrum compared to that for electrons with a parabolic one.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York Editor  
  Language Wos 000281590800171 Publication Date 2010-01-15  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record  
  Impact Factor Times cited Open Access  
  Notes Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:84892 Serial 115  
Permanent link to this record
 

 
Author Narayanan, V.; Lommens, P.; De Buysser, K.; Vanpoucke, D.E.P.; Huehne, R.; Molina, L.; Van Tendeloo, G.; van der Voort, P.; Van Driessche, I. pdf  doi
openurl 
  Title Aqueous CSD approach for the growth of novel, lattice-tuned LaxCe1-xO\delta epitaxial layers Type A1 Journal article
  Year 2012 Publication Journal of materials chemistry Abbreviated Journal J Mater Chem  
  Volume 22 Issue 17 Pages 8476-8483  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Lanthanumcerium oxide (LCO) films were deposited on Ni-5%W substrates by chemical solution deposition (CSD) from water-based precursors. LCO films containing different ratios of lanthanum and cerium ions (from CeO2 to La2Ce2O7) were prepared. The composition of the layers was optimized towards the formation of LCO buffer layers, lattice-matched with the superconducting YBa2Cu3Oy layer, useful for the development of coated conductors. Single, crack-free LCO layers with a thickness of up to 140 nm could be obtained in a single deposition step. The crystallinity and microstructure of these lattice-matched LCO layers were studied by X-ray diffraction techniques, RHEED and SEM. We find that only layers with thickness below 100 nm show a crystalline top surface although both thick and thin layers show good biaxial texture in XRD. On the most promising layers, AFM and (S)TEM were performed to further evaluate their morphology. The overall surface roughness varies between 3.9 and 7.5 nm, while the layers appear much more dense than the frequently used La2Zr2O7 (LZO) systems, showing much smaller nanovoids (12 nm) than the latter system. Their effective buffer layer action was studied using XPS. The thin LCO layers supported the growth of superconducting YBCO deposited using PLD methods.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Cambridge Editor  
  Language Wos 000302367500044 Publication Date 2012-03-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0959-9428;1364-5501; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 24 Open Access  
  Notes Iap Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:96960 Serial 148  
Permanent link to this record
 

 
Author Partoens, B.; Peeters, F.M. openurl 
  Title Artificial atoms and molecules Type A1 Journal article
  Year 2002 Publication Physicalia magazine Abbreviated Journal  
  Volume 24 Issue Pages 29  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Gent Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0770-0520 ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:62455 Serial 152  
Permanent link to this record
 

 
Author Van Tendeloo, G.; Schryvers, D. openurl 
  Title Atomic structure of alloys close to phase transitions Type A1 Journal article
  Year 2000 Publication Nucleation and growth processes in materials Abbreviated Journal  
  Volume 580 Issue Pages 283-292  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000165506200043 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:48377 Serial 197  
Permanent link to this record
 

 
Author Barbier, M.; Vasilopoulos, P.; Peeters, F.M.; Pereira, J.M. doi  openurl
  Title Band structure, density of states, and transmission in graphene bilayer superlattices Type A1 Journal article
  Year 2009 Publication AIP conference proceedings Abbreviated Journal  
  Volume 1199 Issue Pages 547-548  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The energy spectrum and density of states of graphene bilayer superlattices (SLs) are evaluated. We take into account doping and/or gating of the layers as well as tunnel coupling between them. In addition, we evaluate the transmission through such SLs and through single or double barriers. The transmission exhibits a strong dependence on the direction of the incident wave vector.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York Editor  
  Language Wos 000281590800258 Publication Date 2010-01-15  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record  
  Impact Factor Times cited Open Access  
  Notes Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:84893 Serial 217  
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Author Mahieu, S.; Ghekiere, P.; de Winter, G.; de Gryse, R.; Depla, D.; Lebedev, O.I. openurl 
  Title Biaxially aligned yttria stabilized zirconia and titanium nitride layers deposited by unbalanced magnetron sputtering Type A1 Journal article
  Year 2005 Publication Diffusion and defect data : solid state data : part B : solid state phenomena T2 – 2nd International Conference on Texture and Anisotropy of Polycrystals, JUL 07-09, 2004, Metz, FRANCE Abbreviated Journal  
  Volume 105 Issue Pages 447-452  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Control of the texture and the biaxial alignment of sputter deposited films has provoked a great deal of interest due to its technological importance. indeed, many physical properties of thin films are influenced by the biaxial alignment. In this context, extensive research has been established to understand the growth mechanism of biaxially aligned Yttria Stabilized Zirconia (YSZ) as a buffer layer for high temperature superconducting copper oxides. In this work, the growth mechanism in general and the mechanism responsible of the biaxial alignment in detail were investigated for thin films of YSZ and TiN deposited by unbalanced magnetron sputtering using non-aligned polycrystalline stainless steel substrates. The mechanism responsible for the preferential out-of-plane alignment has been investigated by performing depositions on a non-tilted substrate. However, to study the in-plane alignment a tilted substrate was used. The microstructure of the deposited layers was characterised by Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). The crystallographic alignment has been investigated by X-ray diffraction (XRD) (angular scans and pole figures) and by Selective Area Diffraction (SAD). It was observed that the deposited layers show a zone T or zone II structure and the layers with a zone T structure consist of faceted grains. There seems to be a correlation between the crystal habit of these faceted grains and the measured biaxial alignment. A model for the preferential out-of-plane orientation, the in-plane alignment and the correlation between the microstructure and the biaxial alignment is proposed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Vaduz Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 3-908451-09-4 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited Open Access  
  Notes Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:103190 Serial 230  
Permanent link to this record
 

 
Author Payette, C.; Austing, D.G.; Yu, G.; Gupta, J.A.; Nair, S.V.; Partoens, B.; Amaha, S.; Tarucha, S. pdf  url
doi  openurl
  Title Branch current behavior at two level anti-crossings in vertical quantum dot single-particle spectra Type A1 Journal article
  Year 2010 Publication AIP conference proceedings Abbreviated Journal  
  Volume 1199 Issue Pages 271-272  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We study single-electron-elastic-resonant-tunneling through two weakly coupled vertical quantum dots and investigate the branch current behavior at anti-crossings between two single-particle energy levels in the constituent dot spectra that are induced to approach each other by application of an out-of-dot-plane magnetic field. We observe both the familiar case of monotonic transfer of the resonant current strengths between the two branches as well as the less familiar case of concurrent enhancement and suppression (ideally complete cancellation) of the resonant current in the two branches. These two situations can be explained in terms of a simple coherent tunneling model. ©2009 American Institute of Physics  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York Editor  
  Language Wos 000281590800127 Publication Date 2010-01-15  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record  
  Impact Factor Times cited Open Access  
  Notes Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:86923 Serial 254  
Permanent link to this record
 

 
Author Schowalter, M.; Rosenauer, A.; Titantah, J.T.; Lamoen, D. openurl 
  Title Calculation of Debye-Waller temperature factors for GaAs Type A1 Journal article
  Year 2008 Publication Springer proceedings in physics Abbreviated Journal  
  Volume 120 Issue Pages 195-198  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0930-8989 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:73966 Serial 266  
Permanent link to this record
 

 
Author Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. openurl 
  Title Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation Type A1 Journal article
  Year 2001 Publication Institute of physics conference series Abbreviated Journal  
  Volume Issue 169 Pages 481-484  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0-7503-0818-4 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:95163 Serial 311  
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Author Vernochet, C.; Vannier, R.-N.; Huvé, M.; Pirovano, C.; Nowogrocki, G.; Mairesse, G.; Van Tendeloo, G. pdf  doi
openurl 
  Title Chemical, structural and electrical characterizations in the BIZNVOX family Type A1 Journal article
  Year 2000 Publication Journal of materials chemistry Abbreviated Journal J Mater Chem  
  Volume 10 Issue 12 Pages 2811-2817  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Cambridge Editor  
  Language Wos 000165487800037 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0959-9428;1364-5501; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 13 Open Access  
  Notes Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:54757 Serial 351  
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Author Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. openurl 
  Title Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation Type A1 Journal article
  Year 1999 Publication Institute of physics conference series T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND Abbreviated Journal Inst Phys Conf Ser  
  Volume Issue 164 Pages 495-498  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000166835300106 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0-7503-0650-5; 0951-3248 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:102918 Serial 376  
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Author Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al. pdf  openurl
  Title Comparative study of structural properties and photoluminescence in InGaN layers with a high In content Type A1 Journal article
  Year 2000 Publication Internet journal of nitride semiconductor research T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS Abbreviated Journal Mrs Internet J N S R  
  Volume 5 Issue s:[1] Pages art. no.-W11.38  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RES) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nn strongly suggesting that the light-emitting regions of the sample me very indium-rich compared to the average measured by RES. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.  
  Address  
  Corporate Author Thesis  
  Publisher Materials research society Place of Publication Warrendale Editor  
  Language Wos 000090103600097 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1092-5783 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:103471 Serial 423  
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Author Lubyshev, D.; Fastenau, J.M.; Fang, X.-M.; Wu, Y.; Doss, C.; Snyder, A.; Liu, W.K.; Lamb, M.S.M.; Bals, S.; Song, C. pdf  doi
openurl 
  Title Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications Type A1 Journal article
  Year 2004 Publication Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena Abbreviated Journal  
  Volume 22 Issue 3 Pages 1565-1569  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Metamorphic buffers (M-buffers) consisting of graded InAlAs or bulk InP were employed for the production of InP-based epiwafers on GaAs substrates by molecular-beam epitaxy. The graded InAlAs is the standard for production metamorphic high electron mobility transistors (M-HEMTs), while the bulk InP offers superior thermal properties for higher current density circuits. The surface morphology and crystal structure of the two M-buffers showed different relaxation mechanisms. The graded InAlAs gave a cross-hatched pattern with nearly full relaxation and very effective dislocation filtering, while the bulk InP had a uniform isotropic surface with dislocations propagating further up towards the active layers. Both types of M-buffers had atomic force microscopy root-mean-square roughness values around 2030 Å. The Hall transport properties of high electron mobility transistors (HEMTs) grown on the InAlAs M-buffer, and a baseline HEMT grown lattice matched on InP, both had room-temperature mobilities >10 000 cm2/V s, while the M-HEMT on the InP M-buffer showed a decrease to 9000 cm2/V  s. Similarly, the dc parameters of a double heterojunction bipolar transistor (DHBT) grown on the InAlAs M-buffer were much closer to the baseline heterojunction bipolar transistor than a DHBT grown on the InP M-buffer. A high breakdown voltage of 11.3 V was achieved on an M-DHBT with the InAlAs M-buffer. We speculate that the degradation in device characteristics on the InP M-buffer was related to the incomplete dislocation filtering.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Woodbury, N.Y. Editor  
  Language Wos 000222481400141 Publication Date 2004-07-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-211X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 25 Open Access  
  Notes Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:87596 Serial 427  
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Author Cassiers, K.; Linssen, T.; Aerts, K.; Cool, P.; Lebedev, O.; Van Tendeloo, G.; van Grieken, R.; Vansant, E.F. pdf  doi
openurl 
  Title Controlled formation of amine-templated mesostructured zirconia with remarkably high thermal stability Type A1 Journal article
  Year 2003 Publication Journal of materials chemistry Abbreviated Journal J Mater Chem  
  Volume 13 Issue Pages 3033-3039  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA); AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Cambridge Editor  
  Language Wos 000186907500040 Publication Date 2003-11-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0959-9428;1364-5501; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 26 Open Access  
  Notes Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:43522 Serial 502  
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Author Oleshko, V.; Gijbels, R.; Jacob, W.; van Daele, A. openurl 
  Title Cryo-electron spectroscopic imaging, electron energy-loss spectroscopy and energy-dispersive X-ray analysis of Ag(Br,I) nano- and microcrystals Type A1 Journal article
  Year 1998 Publication Mikrochimica acta: supplementum Abbreviated Journal  
  Volume 15 Issue Pages 87-92  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Wien Editor  
  Language Wos 000075322100013 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0076-8642 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:20554 Serial 550  
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Author Tarakina, N.V.; Zubkov, V.G.; Leonidov, I.I.; Tyutunnik, A.P.; Surat, L.L.; Hadermann, J.; Van Tendeloo, G. doi  openurl
  Title Crystal structure of the group of optical materials Ln2MeGe4O12 (Me = Ca, Mn) Type A1 Journal article
  Year 2009 Publication Zeitschrift für Kristallographie Abbreviated Journal  
  Volume Issue S:30 Pages 401-406  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The crystal structure of the group of optical materials Ln2MeGe4O12, Ln = Eu, Gd, Dy-Lu, Y; Me = Ca, Mn and of the solid solution (Y1-xErx)2CaGe4O12 (x = 0 – 1), promising materials for photonics, has been studied in detail. The crystal structure of all compounds exhibit two alternating layers: one formed by Ln and Me atoms and another by cyclic [Ge4O12]8- anions.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication München Editor  
  Language Wos 000271325700028 Publication Date 2009-08-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0930-486X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 7 Open Access  
  Notes Iap Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:79988 Serial 575  
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Author Chandrasekaran, M.; Ghosh, G.; Schryvers, D.; de Graef, M.; Delaey, L.; Van Tendeloo, G. openurl 
  Title Decomposition of a metastable bcc phase in rapidly solidified Ni-9 at.% Zr and Ni-8 at.%X alloys Type A1 Journal article
  Year 1997 Publication Philosophical magazine: A: physics of condensed matter: defects and mechanical properties Abbreviated Journal Philos Mag A  
  Volume 75 Issue Pages 677-701  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos A1997WN48000006 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0141-8610; 1364-2804 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 5 Open Access  
  Notes Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:21343 Serial 608  
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Author Seo, J.W.; Schryvers, D. doi  openurl
  Title Defect structures in CuZr martensite, studies by CTEM and HRTEM Type A1 Journal article
  Year 1997 Publication Journal de physique: 4 Abbreviated Journal J Phys Iv  
  Volume C5 Issue Pages 149-154  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Les Ulis Editor  
  Language Wos 000072520300024 Publication Date 2007-07-11  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1155-4339; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 1 Open Access  
  Notes Approved (down) Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:21351 Serial 623  
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